ES480075A1 - Perfeccionamientos en los transductores para medir presiones. - Google Patents

Perfeccionamientos en los transductores para medir presiones.

Info

Publication number
ES480075A1
ES480075A1 ES480075A ES480075A ES480075A1 ES 480075 A1 ES480075 A1 ES 480075A1 ES 480075 A ES480075 A ES 480075A ES 480075 A ES480075 A ES 480075A ES 480075 A1 ES480075 A1 ES 480075A1
Authority
ES
Spain
Prior art keywords
layer
transducers
transducer
diffused
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES480075A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Babcock and Wilcox Co
Original Assignee
Babcock and Wilcox Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Babcock and Wilcox Co filed Critical Babcock and Wilcox Co
Publication of ES480075A1 publication Critical patent/ES480075A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

Perfeccionamientos en los transductores para medir presiones y, particularmente, en los transductores para medir presiones que tiene galgas eléctricas piezorresistentes blindadas, caracterizados porque el transductor comprende: un material de base de una polaridad eléctrica determinada; un material piezorresistente formado en dicho material de base con una polaridad diferente de la polaridad de dicho material de base; una capa de óxido que se extiende sobre dicho material piezorresistente; y una capa de material eléctricamente conductor que se extiende sobre dicho óxido que cubre dicho material piezorresistente y susceptible de conexión eléctrica para eliminar la acumulación de cargas superficiales de encima.
ES480075A 1978-08-28 1979-04-28 Perfeccionamientos en los transductores para medir presiones. Expired ES480075A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93730478A 1978-08-28 1978-08-28

Publications (1)

Publication Number Publication Date
ES480075A1 true ES480075A1 (es) 1979-11-16

Family

ID=25469756

Family Applications (2)

Application Number Title Priority Date Filing Date
ES480075A Expired ES480075A1 (es) 1978-08-28 1979-04-28 Perfeccionamientos en los transductores para medir presiones.
ES480076A Expired ES480076A1 (es) 1978-08-28 1979-04-28 Metodo para fabricar transductores para medir presiones.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES480076A Expired ES480076A1 (es) 1978-08-28 1979-04-28 Metodo para fabricar transductores para medir presiones.

Country Status (9)

Country Link
JP (1) JPS5533092A (es)
AU (1) AU503379B1 (es)
BR (1) BR7902641A (es)
CA (1) CA1134021A (es)
DE (1) DE2921043C2 (es)
ES (2) ES480075A1 (es)
FR (1) FR2435022A1 (es)
GB (1) GB2029094B (es)
IT (1) IT1112793B (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4327350A (en) * 1979-07-17 1982-04-27 Data Instruments, Inc. Pressure transducer
JPS5796573A (en) * 1980-12-08 1982-06-15 Hitachi Ltd Semiconductor strain transducer
JPS58197780A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 半導体圧力変換器
JPS59230101A (ja) * 1983-06-13 1984-12-24 Tokyo Electric Co Ltd 歪センサ
CA1314410C (en) * 1986-12-08 1993-03-16 Masanori Nishiguchi Wiring structure of semiconductor pressure sensor
FR2643148B1 (fr) * 1989-02-15 1991-12-06 Schlumberger Ind Sa Capteur de pression du type semiconducteur sur isolant
DE102007057877A1 (de) 2007-11-29 2009-06-04 Endress + Hauser Gmbh + Co. Kg Drucksensor
CN116222839B (zh) * 2023-05-09 2023-07-18 苏州亿波达光电子科技有限公司 一种感测元件及压力传感器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE875879C (de) * 1951-07-25 1953-05-07 Land Abschirmverfahren fuer Dehnungsmessstreifen
GB1265018A (es) * 1968-08-27 1972-03-01
US4050049A (en) * 1976-02-09 1977-09-20 Signetics Corporation Solid state force transducer, support and method of making same
FR2367280A1 (fr) * 1976-10-08 1978-05-05 Schlumberger Ind Sa Capteur a jauges de contrainte equipe d'une sonde de temperature
JPS54131892A (en) * 1978-04-05 1979-10-13 Hitachi Ltd Semiconductor pressure converter

Also Published As

Publication number Publication date
BR7902641A (pt) 1980-03-18
FR2435022B1 (es) 1983-04-01
IT1112793B (it) 1986-01-20
DE2921043C2 (de) 1985-07-04
ES480076A1 (es) 1979-11-16
IT7922259A0 (it) 1979-04-30
DE2921043A1 (de) 1980-03-13
GB2029094B (en) 1983-01-26
CA1134021A (en) 1982-10-19
GB2029094A (en) 1980-03-12
FR2435022A1 (fr) 1980-03-28
JPS5533092A (en) 1980-03-08
AU503379B1 (en) 1979-08-30

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19970303