CA1134021A - Pressure transducer having electrically shielded piezoresistive sensors - Google Patents
Pressure transducer having electrically shielded piezoresistive sensorsInfo
- Publication number
- CA1134021A CA1134021A CA329,874A CA329874A CA1134021A CA 1134021 A CA1134021 A CA 1134021A CA 329874 A CA329874 A CA 329874A CA 1134021 A CA1134021 A CA 1134021A
- Authority
- CA
- Canada
- Prior art keywords
- piezoresistive
- layer
- pressure transducer
- type
- electrically conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 43
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000009825 accumulation Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000000615 nonconductor Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 7
- 239000012530 fluid Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 9
- 229960001866 silicon dioxide Drugs 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 230000035508 accumulation Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 208000036366 Sensation of pressure Diseases 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GPUADMRJQVPIAS-QCVDVZFFSA-M cerivastatin sodium Chemical compound [Na+].COCC1=C(C(C)C)N=C(C(C)C)C(\C=C\[C@@H](O)C[C@@H](O)CC([O-])=O)=C1C1=CC=C(F)C=C1 GPUADMRJQVPIAS-QCVDVZFFSA-M 0.000 description 1
- 230000002844 continuous effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001702 transmitter Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93730478A | 1978-08-28 | 1978-08-28 | |
| US937,304 | 1978-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1134021A true CA1134021A (en) | 1982-10-19 |
Family
ID=25469756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA329,874A Expired CA1134021A (en) | 1978-08-28 | 1979-06-15 | Pressure transducer having electrically shielded piezoresistive sensors |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5533092A (es) |
| AU (1) | AU503379B1 (es) |
| BR (1) | BR7902641A (es) |
| CA (1) | CA1134021A (es) |
| DE (1) | DE2921043C2 (es) |
| ES (2) | ES480075A1 (es) |
| FR (1) | FR2435022A1 (es) |
| GB (1) | GB2029094B (es) |
| IT (1) | IT1112793B (es) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4327350A (en) * | 1979-07-17 | 1982-04-27 | Data Instruments, Inc. | Pressure transducer |
| JPS5796573A (en) * | 1980-12-08 | 1982-06-15 | Hitachi Ltd | Semiconductor strain transducer |
| JPS58197780A (ja) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | 半導体圧力変換器 |
| JPS59230101A (ja) * | 1983-06-13 | 1984-12-24 | Tokyo Electric Co Ltd | 歪センサ |
| CA1314410C (en) * | 1986-12-08 | 1993-03-16 | Masanori Nishiguchi | Wiring structure of semiconductor pressure sensor |
| FR2643148B1 (fr) * | 1989-02-15 | 1991-12-06 | Schlumberger Ind Sa | Capteur de pression du type semiconducteur sur isolant |
| DE102007057877A1 (de) | 2007-11-29 | 2009-06-04 | Endress + Hauser Gmbh + Co. Kg | Drucksensor |
| CN116222839B (zh) * | 2023-05-09 | 2023-07-18 | 苏州亿波达光电子科技有限公司 | 一种感测元件及压力传感器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE875879C (de) * | 1951-07-25 | 1953-05-07 | Land | Abschirmverfahren fuer Dehnungsmessstreifen |
| GB1265018A (es) * | 1968-08-27 | 1972-03-01 | ||
| US4050049A (en) * | 1976-02-09 | 1977-09-20 | Signetics Corporation | Solid state force transducer, support and method of making same |
| FR2367280A1 (fr) * | 1976-10-08 | 1978-05-05 | Schlumberger Ind Sa | Capteur a jauges de contrainte equipe d'une sonde de temperature |
| JPS54131892A (en) * | 1978-04-05 | 1979-10-13 | Hitachi Ltd | Semiconductor pressure converter |
-
1979
- 1979-03-01 AU AU44732/79A patent/AU503379B1/en not_active Ceased
- 1979-03-21 GB GB7909862A patent/GB2029094B/en not_active Expired
- 1979-04-27 BR BR7902641A patent/BR7902641A/pt unknown
- 1979-04-28 ES ES480075A patent/ES480075A1/es not_active Expired
- 1979-04-28 ES ES480076A patent/ES480076A1/es not_active Expired
- 1979-04-30 IT IT22259/79A patent/IT1112793B/it active
- 1979-05-23 DE DE2921043A patent/DE2921043C2/de not_active Expired
- 1979-06-15 CA CA329,874A patent/CA1134021A/en not_active Expired
- 1979-06-28 FR FR7916710A patent/FR2435022A1/fr active Granted
- 1979-07-27 JP JP9516179A patent/JPS5533092A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BR7902641A (pt) | 1980-03-18 |
| FR2435022B1 (es) | 1983-04-01 |
| ES480075A1 (es) | 1979-11-16 |
| IT1112793B (it) | 1986-01-20 |
| DE2921043C2 (de) | 1985-07-04 |
| ES480076A1 (es) | 1979-11-16 |
| IT7922259A0 (it) | 1979-04-30 |
| DE2921043A1 (de) | 1980-03-13 |
| GB2029094B (en) | 1983-01-26 |
| GB2029094A (en) | 1980-03-12 |
| FR2435022A1 (fr) | 1980-03-28 |
| JPS5533092A (en) | 1980-03-08 |
| AU503379B1 (en) | 1979-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100507942B1 (ko) | 반도체용 압력 센서 | |
| US4462018A (en) | Semiconductor strain gauge with integral compensation resistors | |
| US4295115A (en) | Semiconductor absolute pressure transducer assembly and method | |
| US4079508A (en) | Miniature absolute pressure transducer assembly and method | |
| CA1078217A (en) | Force transducing cantilever beam and pressure transducer incorporating it | |
| US4500864A (en) | Pressure sensor | |
| US4188258A (en) | Process for fabricating strain gage transducer | |
| US5549006A (en) | Temperature compensated silicon carbide pressure transducer and method for making the same | |
| US3968466A (en) | Pressure transducer | |
| EP0316343A1 (en) | PRESSURE SENSORS ISOLATED FROM THE PRESSURE MEDIUM. | |
| CA1134021A (en) | Pressure transducer having electrically shielded piezoresistive sensors | |
| JP3662018B2 (ja) | 内燃機関の燃焼室内の圧力を検出するための圧力センサ | |
| KR910001842B1 (ko) | 반도체압력센서의 브리지회로 조정방법 | |
| US4633212A (en) | Electrical strain gauge | |
| US3230763A (en) | Semiconductor pressure diaphragm | |
| US4212209A (en) | Differential pressure to electric current transducer employing a strain sensitive resistive pattern on a substrate having a high modulus of elasticity | |
| US3434090A (en) | Compound strain gage structure | |
| US3482197A (en) | Pressure sensitive device incorporating semiconductor transducer | |
| US6635910B1 (en) | Silicon strain gage having a thin layer of highly conductive silicon | |
| CN107490337B (zh) | 应变检测器及其制造方法 | |
| GB2034970A (en) | Semiconductor pressure transducer | |
| JP3346118B2 (ja) | 半導体加速度センサ | |
| JP3330831B2 (ja) | 歪検出センサ | |
| GB2174241A (en) | Transducer devices | |
| JPH073379B2 (ja) | 接触覚センサ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |