ES475322A1 - Uns sistema para formar pequenos cuerpos semiconductores. - Google Patents

Uns sistema para formar pequenos cuerpos semiconductores.

Info

Publication number
ES475322A1
ES475322A1 ES475322A ES475322A ES475322A1 ES 475322 A1 ES475322 A1 ES 475322A1 ES 475322 A ES475322 A ES 475322A ES 475322 A ES475322 A ES 475322A ES 475322 A1 ES475322 A1 ES 475322A1
Authority
ES
Spain
Prior art keywords
bodies
semiconductor
tear
grain boundaries
semiconductor bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES475322A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of ES475322A1 publication Critical patent/ES475322A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Furnace Details (AREA)
  • Recrystallisation Techniques (AREA)
  • General Induction Heating (AREA)

Abstract

Un sistema para formar pequeños cuerpos semiconductores de tamaño casi uniforme, con límites de grano mínimo, a partir de cuerpos de material semiconductor, que comprende: un tubo de alimentación para recibir dichos cuerpos; un susceptor térmico que circunda dicho tubo de alimentación y que rodea a una trayectoria de caída libre por debajo de dicho tubo de alimentación, un tubo que encierra dicho susceptor, y medios de calentamiento que circundan a dicho tubo para establecer un nivel de temperatura cerca de dicho tubo de alimentación situado por encima del punto de fusión de dicho material semiconductor y para establecer un gradiente de temperaturas predeterminado durante las siguientes partes inferiores de dicha trayectoria de caída libre, a una temperatura inferior a dicho punto de fusión.
ES475322A 1977-02-07 1978-11-23 Uns sistema para formar pequenos cuerpos semiconductores. Expired ES475322A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/766,223 US4188177A (en) 1977-02-07 1977-02-07 System for fabrication of semiconductor bodies

Publications (1)

Publication Number Publication Date
ES475322A1 true ES475322A1 (es) 1979-04-01

Family

ID=25075779

Family Applications (2)

Application Number Title Priority Date Filing Date
ES466691A Expired ES466691A1 (es) 1977-02-07 1978-02-06 Un metodo de formar pequenos cuerpos semiconductores de ta- mano casi uniforme
ES475322A Expired ES475322A1 (es) 1977-02-07 1978-11-23 Uns sistema para formar pequenos cuerpos semiconductores.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES466691A Expired ES466691A1 (es) 1977-02-07 1978-02-06 Un metodo de formar pequenos cuerpos semiconductores de ta- mano casi uniforme

Country Status (8)

Country Link
US (1) US4188177A (es)
JP (1) JPS5415662A (es)
AU (1) AU517424B2 (es)
DE (1) DE2805118A1 (es)
ES (2) ES466691A1 (es)
FR (1) FR2379315A1 (es)
GB (2) GB1597738A (es)
ZA (1) ZA78727B (es)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4354987A (en) * 1981-03-31 1982-10-19 Union Carbide Corporation Consolidation of high purity silicon powder
US4430150A (en) * 1981-08-07 1984-02-07 Texas Instruments Incorporated Production of single crystal semiconductors
FR2629573B1 (fr) * 1988-04-05 1991-01-04 Aubert & Duval Acieries Tete de fusion continue pour metaux ou alliages
US5556791A (en) * 1995-01-03 1996-09-17 Texas Instruments Incorporated Method of making optically fused semiconductor powder for solar cells
US6706959B2 (en) 2000-11-24 2004-03-16 Clean Venture 21 Corporation Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles
US7001543B2 (en) * 2001-10-23 2006-02-21 Kyocera Corporation Apparatus and method for manufacturing semiconductor grains
US7189278B2 (en) * 2002-04-18 2007-03-13 Clean Venture 21 Corporation Method and apparatus for producing semiconductor or metal particles
US7323047B2 (en) * 2005-03-25 2008-01-29 Kyocera Corporation Method for manufacturing granular silicon crystal
JPWO2008047881A1 (ja) * 2006-10-19 2010-02-25 京セラ株式会社 結晶シリコン粒子の製造方法及び結晶シリコン粒子の製造装置
TW201014937A (en) * 2008-10-06 2010-04-16 Clean Venture 21 Corp Method for producing semiconductor particles
JPWO2010073413A1 (ja) * 2008-12-25 2012-05-31 学校法人 芝浦工業大学 球状半導体の製造装置
JP7047398B2 (ja) 2018-01-23 2022-04-05 セイコーエプソン株式会社 液体吐出ヘッドおよび液体吐出装置
JP2022546488A (ja) 2019-08-28 2022-11-04 コメット テクノロジーズ ユーエスエー インコーポレイテッド 高出力低周波数コイル

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2038251A (en) * 1933-01-03 1936-04-21 Vogt Hans Process for the thermic treatment of small particles
NL81688C (es) * 1949-12-23
GB796407A (en) * 1953-07-15 1958-06-11 Clevite Corp Method of producing single semiconductor crystals
BE544714A (es) * 1955-01-28
US2935386A (en) * 1956-01-03 1960-05-03 Clevite Corp Method of producing small semiconductor silicon crystals
BE604783A (es) * 1961-04-28
US3160686A (en) * 1962-08-01 1964-12-08 Delavan Mfg Company Process for making capsules
US3666850A (en) * 1969-07-10 1972-05-30 Dow Chemical Co Packaging method and apparatus
US3715418A (en) * 1969-10-02 1973-02-06 Monsanto Co Low viscosity melt spinning process
US3753661A (en) * 1971-02-08 1973-08-21 Fiber Industries Inc Apparatus for the preparation of filamentary material
US3708560A (en) * 1971-07-12 1973-01-02 Standard Oil Co Hydraulic fracturing proppant composition and method for forming such proppants

Also Published As

Publication number Publication date
FR2379315B1 (es) 1984-10-12
JPS5750753B2 (es) 1982-10-28
ZA78727B (en) 1979-01-31
JPS5415662A (en) 1979-02-05
GB1597738A (en) 1981-09-09
DE2805118A1 (de) 1978-08-24
GB1597739A (en) 1981-09-09
AU3308478A (en) 1979-08-16
AU517424B2 (en) 1981-07-30
ES466691A1 (es) 1979-08-16
US4188177A (en) 1980-02-12
FR2379315A1 (fr) 1978-09-01

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971201