GB796407A - Method of producing single semiconductor crystals - Google Patents
Method of producing single semiconductor crystalsInfo
- Publication number
- GB796407A GB796407A GB17407/54A GB1740754A GB796407A GB 796407 A GB796407 A GB 796407A GB 17407/54 A GB17407/54 A GB 17407/54A GB 1740754 A GB1740754 A GB 1740754A GB 796407 A GB796407 A GB 796407A
- Authority
- GB
- United Kingdom
- Prior art keywords
- specimens
- germanium
- tube
- quartz
- pict
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Small single crystals of germanium are formed by heating germanium or germanium dioxide to produce small molten specimens each containing germanium in an amount equal to that desired in a diode or transistor crystal, and cooling the molten specimens at a rate between 0.3 DEG C. and 2000 DEG C. per second to <PICT:0796407/III/1> <PICT:0796407/III/2> <PICT:0796407/III/3> obtain single crystals. In one method specimens 9 (Fig. 1) of germanium or germanium dioxide are placed on a plate 10, which may be of quartz or graphite and may be coated with carbon black, in a quartz tube 13 surrounded by a heating coil 14. The heating coil may be moved longitudinally so that the specimens are melted and then cooled, or the coil may be stationary and the plate 10 moved along the tube 13. A gas such as hydrogen, nitrogen, helium or argon may be passed through the tube 13 by means of an inlet 16 and an outlet 18. The plate 10 may be flat or may have recesses for locating the specimens, or may have grooves narrower than the specimens so that the specimens are supported by the upper edges of the grooves. Junctions may be obtained by adding donor or acceptor inpurities to the specimens, or by heating and cooling the specimens with a vacuum in the tube 13 and then adding impurities by metal evaporation or by admitting gaseous metal compounds. In another method discrete germanium specimens are embedded in a mass of carbon black which is heated and cooled, or a specimen 40 (Fig. 4) is placed in a quartz mould 42 having a cover 43 in a furnace 41, the single crystal being formed as a thin slab as the cover flattens the specimen when it melts. In a further method germanium 58 (Fig. 5) is melted in a chamber 56 having a bore 57 by a heater coil 59 surrounding a quartz tube 50. Drops of molten germanium pass through the bore 57 and form single crystals as they fall, which are received in a liquid bath 51. Gas is passed through the tube 50 by means of inlets 60 and outlet 61 to provide a suitable atmosphere and to delay the descent of the drops.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US796407XA | 1953-07-15 | 1953-07-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB796407A true GB796407A (en) | 1958-06-11 |
Family
ID=22151840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB17407/54A Expired GB796407A (en) | 1953-07-15 | 1954-06-14 | Method of producing single semiconductor crystals |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB796407A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2805118A1 (en) * | 1977-02-07 | 1978-08-24 | Kilby Jack St Clair | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR BODIES |
-
1954
- 1954-06-14 GB GB17407/54A patent/GB796407A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2805118A1 (en) * | 1977-02-07 | 1978-08-24 | Kilby Jack St Clair | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR BODIES |
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