GB796407A - Method of producing single semiconductor crystals - Google Patents

Method of producing single semiconductor crystals

Info

Publication number
GB796407A
GB796407A GB17407/54A GB1740754A GB796407A GB 796407 A GB796407 A GB 796407A GB 17407/54 A GB17407/54 A GB 17407/54A GB 1740754 A GB1740754 A GB 1740754A GB 796407 A GB796407 A GB 796407A
Authority
GB
United Kingdom
Prior art keywords
specimens
germanium
tube
quartz
pict
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17407/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clevite Corp
Original Assignee
Clevite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clevite Corp filed Critical Clevite Corp
Publication of GB796407A publication Critical patent/GB796407A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Small single crystals of germanium are formed by heating germanium or germanium dioxide to produce small molten specimens each containing germanium in an amount equal to that desired in a diode or transistor crystal, and cooling the molten specimens at a rate between 0.3 DEG C. and 2000 DEG C. per second to <PICT:0796407/III/1> <PICT:0796407/III/2> <PICT:0796407/III/3> obtain single crystals. In one method specimens 9 (Fig. 1) of germanium or germanium dioxide are placed on a plate 10, which may be of quartz or graphite and may be coated with carbon black, in a quartz tube 13 surrounded by a heating coil 14. The heating coil may be moved longitudinally so that the specimens are melted and then cooled, or the coil may be stationary and the plate 10 moved along the tube 13. A gas such as hydrogen, nitrogen, helium or argon may be passed through the tube 13 by means of an inlet 16 and an outlet 18. The plate 10 may be flat or may have recesses for locating the specimens, or may have grooves narrower than the specimens so that the specimens are supported by the upper edges of the grooves. Junctions may be obtained by adding donor or acceptor inpurities to the specimens, or by heating and cooling the specimens with a vacuum in the tube 13 and then adding impurities by metal evaporation or by admitting gaseous metal compounds. In another method discrete germanium specimens are embedded in a mass of carbon black which is heated and cooled, or a specimen 40 (Fig. 4) is placed in a quartz mould 42 having a cover 43 in a furnace 41, the single crystal being formed as a thin slab as the cover flattens the specimen when it melts. In a further method germanium 58 (Fig. 5) is melted in a chamber 56 having a bore 57 by a heater coil 59 surrounding a quartz tube 50. Drops of molten germanium pass through the bore 57 and form single crystals as they fall, which are received in a liquid bath 51. Gas is passed through the tube 50 by means of inlets 60 and outlet 61 to provide a suitable atmosphere and to delay the descent of the drops.
GB17407/54A 1953-07-15 1954-06-14 Method of producing single semiconductor crystals Expired GB796407A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US796407XA 1953-07-15 1953-07-15

Publications (1)

Publication Number Publication Date
GB796407A true GB796407A (en) 1958-06-11

Family

ID=22151840

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17407/54A Expired GB796407A (en) 1953-07-15 1954-06-14 Method of producing single semiconductor crystals

Country Status (1)

Country Link
GB (1) GB796407A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2805118A1 (en) * 1977-02-07 1978-08-24 Kilby Jack St Clair METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR BODIES

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2805118A1 (en) * 1977-02-07 1978-08-24 Kilby Jack St Clair METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR BODIES

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