ES407968A1 - Perfeccionamientos introducidos en un dispositivo semiconductor. - Google Patents

Perfeccionamientos introducidos en un dispositivo semiconductor.

Info

Publication number
ES407968A1
ES407968A1 ES0407968A ES407968A ES407968A1 ES 407968 A1 ES407968 A1 ES 407968A1 ES 0407968 A ES0407968 A ES 0407968A ES 407968 A ES407968 A ES 407968A ES 407968 A1 ES407968 A1 ES 407968A1
Authority
ES
Spain
Prior art keywords
semiconductor layer
layer
charge
semiconductor
translation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0407968A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES407968A1 publication Critical patent/ES407968A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Recrystallisation Techniques (AREA)
ES0407968A 1971-10-27 1972-10-25 Perfeccionamientos introducidos en un dispositivo semiconductor. Expired ES407968A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7114770,A NL176406C (nl) 1971-10-27 1971-10-27 Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.

Publications (1)

Publication Number Publication Date
ES407968A1 true ES407968A1 (es) 1976-02-01

Family

ID=19814339

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0407968A Expired ES407968A1 (es) 1971-10-27 1972-10-25 Perfeccionamientos introducidos en un dispositivo semiconductor.

Country Status (10)

Country Link
US (1) US4807005A (es)
JP (2) JPS579228B2 (es)
AU (1) AU473052B2 (es)
CA (1) CA974659A (es)
DE (1) DE2252148C3 (es)
ES (1) ES407968A1 (es)
FR (1) FR2157972B1 (es)
GB (1) GB1414183A (es)
IT (1) IT975353B (es)
NL (1) NL176406C (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850032B2 (ja) * 1972-07-26 1983-11-08 株式会社日立製作所 ハンドウタイソウチ
US4032952A (en) 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
NL7316495A (nl) * 1973-12-03 1975-06-05 Philips Nv Halfgeleiderinrichting.
DE2400208A1 (de) * 1974-01-03 1975-07-17 Siemens Ag Ladungsgekoppelte uebertragungsanordnung bei der zur ladungsuebertragung majoritaetstraeger verwendet werden
JPS5821360B2 (ja) * 1974-11-01 1983-04-28 日本電気株式会社 デンカテンソウソウチ
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
GB1518953A (en) * 1975-09-05 1978-07-26 Mullard Ltd Charge coupled dircuit arrangements and devices
GB1564107A (en) * 1976-11-05 1980-04-02 Mullard Ltd Charge coupled devices
NL7610351A (nl) * 1976-09-17 1978-03-21 Philips Nv Ladingsoverdrachtinrichting.
JPS56115574A (en) * 1980-01-16 1981-09-10 Nec Corp Semiconductor image pickup element
DE3028727A1 (de) * 1980-07-29 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Ruecksetzschaltung mit unterdruecktem ruecksetzrauschen, insbesondere fuer eine floating-diffusion-ausgangsstufe einer ladungsverschiebeanordnung (ccd)
JPS5861661A (ja) * 1981-10-08 1983-04-12 Toshiba Corp 電荷転送装置
JPS5898961A (ja) * 1981-12-09 1983-06-13 Toshiba Corp 電荷転送装置
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
US4935346A (en) * 1986-08-13 1990-06-19 Lifescan, Inc. Minimum procedure system for the determination of analytes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3796927A (en) * 1970-12-16 1974-03-12 Bell Telephone Labor Inc Three dimensional charge coupled devices
US3902187A (en) * 1971-04-01 1975-08-26 Gen Electric Surface charge storage and transfer devices
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3792322A (en) * 1973-04-19 1974-02-12 W Boyle Buried channel charge coupled devices

Also Published As

Publication number Publication date
FR2157972B1 (es) 1977-08-26
AU473052B2 (en) 1976-06-10
DE2252148C3 (de) 1981-07-30
US4807005A (en) 1989-02-21
NL7114770A (es) 1973-05-02
GB1414183A (en) 1975-11-19
JPS4853682A (es) 1973-07-27
DE2252148A1 (de) 1973-05-03
DE2252148B2 (es) 1980-08-21
AU4812072A (en) 1974-04-26
CA974659A (en) 1975-09-16
JPS53111284A (en) 1978-09-28
JPS588150B2 (ja) 1983-02-14
NL176406C (nl) 1985-04-01
NL176406B (nl) 1984-11-01
IT975353B (it) 1974-07-20
FR2157972A1 (es) 1973-06-08
JPS579228B2 (es) 1982-02-20

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