JPS56115574A - Semiconductor image pickup element - Google Patents

Abstract

PURPOSE:To obtain a photodiode type semiconductor image pickup element having less image defect and high sensitivity by providing different density of the reverse conductivity type impurity layer to the substrate of photodiode from that of the impurity layer of a detecting peripheral circuit and wire and the like. CONSTITUTION:An impurity layer 4 of buried channel charge coupled element forming reverse conductivity type to the semiconductor substrate 1, a transfer gate 5 for controlling the pickup of a signal charge photoelectrically converted from a photoelectric converter to a shift register, and a photoelectric converter 6 of reverse conductivity type impurity layer to the substrate are formed on the substrate 1. The impurity layer 6 is formed in different density from the impurity layer forming the source, drain impurity layers and wires of the transfer gate 5, the layer 6 is formed in low density, the impurity layer having less defect P-N junction can be formed, and the image pickup element having less image defects can be thus formed.