ES373627A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES373627A1
ES373627A1 ES373627A ES373627A ES373627A1 ES 373627 A1 ES373627 A1 ES 373627A1 ES 373627 A ES373627 A ES 373627A ES 373627 A ES373627 A ES 373627A ES 373627 A1 ES373627 A1 ES 373627A1
Authority
ES
Spain
Prior art keywords
resistor
wafer
impurities
contact
contact regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES373627A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES373627A1 publication Critical patent/ES373627A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
ES373627A 1968-11-19 1969-11-17 Un dispositivo semiconductor. Expired ES373627A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5487868A GB1249317A (en) 1968-11-19 1968-11-19 Semiconductor devices

Publications (1)

Publication Number Publication Date
ES373627A1 true ES373627A1 (es) 1972-05-16

Family

ID=10472333

Family Applications (1)

Application Number Title Priority Date Filing Date
ES373627A Expired ES373627A1 (es) 1968-11-19 1969-11-17 Un dispositivo semiconductor.

Country Status (12)

Country Link
JP (1) JPS4844064B1 (xx)
AT (1) AT300961B (xx)
BE (1) BE741870A (xx)
BR (1) BR6914260D0 (xx)
CA (1) CA937682A (xx)
CH (1) CH500570A (xx)
DE (1) DE1954445A1 (xx)
ES (1) ES373627A1 (xx)
FR (1) FR2023619A1 (xx)
GB (1) GB1249317A (xx)
NL (1) NL166820C (xx)
SE (1) SE361771B (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796929A (en) * 1970-12-09 1974-03-12 Philips Nv Junction isolated integrated circuit resistor with crystal damage near isolation junction
FR2123179B1 (xx) * 1971-01-28 1974-02-15 Commissariat Energie Atomique
FR2189876A1 (en) * 1972-06-23 1974-01-25 Anvar Radiation resistant silicon wafers - and solar cells made therefrom for use in space
JPS53148374U (xx) * 1977-04-27 1978-11-22
JPS53136980A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
DE2828607C3 (de) * 1977-06-29 1982-08-12 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung
GB2000639B (en) * 1977-06-29 1982-03-31 Tokyo Shibaura Electric Co Semiconductor device
JPS5439584A (en) * 1977-07-14 1979-03-27 Toshiba Corp Semiconductor device
DE3301665A1 (de) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung eines duennfilmwiderstandes
JPS6014898A (ja) * 1983-07-05 1985-01-25 高田　継生 乾燥手段をそなえた衣類収納箱

Also Published As

Publication number Publication date
BR6914260D0 (pt) 1973-04-19
NL6917221A (xx) 1970-05-21
NL166820C (nl) 1981-09-15
DE1954445A1 (de) 1970-06-11
JPS4844064B1 (xx) 1973-12-22
FR2023619A1 (xx) 1970-08-21
BE741870A (xx) 1970-05-19
NL166820B (nl) 1981-04-15
CA937682A (en) 1973-11-27
AT300961B (de) 1972-08-10
SE361771B (xx) 1973-11-12
GB1249317A (en) 1971-10-13
CH500570A (de) 1970-12-15

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