ES359914A1 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES359914A1 ES359914A1 ES359914A ES359914A ES359914A1 ES 359914 A1 ES359914 A1 ES 359914A1 ES 359914 A ES359914 A ES 359914A ES 359914 A ES359914 A ES 359914A ES 359914 A1 ES359914 A1 ES 359914A1
- Authority
- ES
- Spain
- Prior art keywords
- mobility
- carrier mobility
- drain
- dependent carrier
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001419 dependent effect Effects 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68141367A | 1967-11-08 | 1967-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES359914A1 true ES359914A1 (es) | 1970-06-16 |
Family
ID=24735181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES359914A Expired ES359914A1 (es) | 1967-11-08 | 1968-11-06 | Un dispositivo semiconductor. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3476991A (es) |
| JP (1) | JPS4839513B1 (es) |
| BR (1) | BR6803797D0 (es) |
| DE (1) | DE1807857A1 (es) |
| ES (1) | ES359914A1 (es) |
| FR (1) | FR1592610A (es) |
| GB (1) | GB1229946A (es) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3612960A (en) * | 1968-10-15 | 1971-10-12 | Tokyo Shibaura Electric Co | Semiconductor device |
| US3634737A (en) * | 1969-02-07 | 1972-01-11 | Tokyo Shibaura Electric Co | Semiconductor device |
| US3969753A (en) * | 1972-06-30 | 1976-07-13 | Rockwell International Corporation | Silicon on sapphire oriented for maximum mobility |
| JPS561789B2 (es) * | 1974-04-26 | 1981-01-16 | ||
| US4131496A (en) * | 1977-12-15 | 1978-12-26 | Rca Corp. | Method of making silicon on sapphire field effect transistors with specifically aligned gates |
| US4485390A (en) * | 1978-03-27 | 1984-11-27 | Ncr Corporation | Narrow channel FET |
| JPS5572091A (en) * | 1978-11-24 | 1980-05-30 | Victor Co Of Japan Ltd | Hall element |
| US4268848A (en) * | 1979-05-07 | 1981-05-19 | Motorola, Inc. | Preferred device orientation on integrated circuits for better matching under mechanical stress |
| US4768076A (en) * | 1984-09-14 | 1988-08-30 | Hitachi, Ltd. | Recrystallized CMOS with different crystal planes |
| EP0178133B1 (en) * | 1984-10-08 | 1990-12-27 | Fujitsu Limited | Semiconductor integrated circuit device |
| JPS6292361A (ja) * | 1985-10-17 | 1987-04-27 | Toshiba Corp | 相補型半導体装置 |
| JP3038939B2 (ja) * | 1991-02-08 | 2000-05-08 | 日産自動車株式会社 | 半導体装置 |
| JP3017860B2 (ja) * | 1991-10-01 | 2000-03-13 | 株式会社東芝 | 半導体基体およびその製造方法とその半導体基体を用いた半導体装置 |
| DE19712561C1 (de) * | 1997-03-25 | 1998-04-30 | Siemens Ag | SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit |
| JP2003115587A (ja) * | 2001-10-03 | 2003-04-18 | Tadahiro Omi | ＜１１０＞方位のシリコン表面上に形成された半導体装置およびその製造方法 |
| JP4265882B2 (ja) * | 2001-12-13 | 2009-05-20 | 忠弘 大見 | 相補型ｍｉｓ装置 |
| US6794718B2 (en) * | 2002-12-19 | 2004-09-21 | International Business Machines Corporation | High mobility crystalline planes in double-gate CMOS technology |
| JP4190906B2 (ja) * | 2003-02-07 | 2008-12-03 | 信越半導体株式会社 | シリコン半導体基板及びその製造方法 |
| US7148559B2 (en) | 2003-06-20 | 2006-12-12 | International Business Machines Corporation | Substrate engineering for optimum CMOS device performance |
| US7186622B2 (en) * | 2004-07-15 | 2007-03-06 | Infineon Technologies Ag | Formation of active area using semiconductor growth process without STI integration |
| DE102004036971B4 (de) * | 2004-07-30 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Bewertung lokaler elektrischer Eigenschaften in Halbleiterbauelementen |
| US7298009B2 (en) * | 2005-02-01 | 2007-11-20 | Infineon Technologies Ag | Semiconductor method and device with mixed orientation substrate |
| US8530355B2 (en) | 2005-12-23 | 2013-09-10 | Infineon Technologies Ag | Mixed orientation semiconductor device and method |
| US20070190795A1 (en) * | 2006-02-13 | 2007-08-16 | Haoren Zhuang | Method for fabricating a semiconductor device with a high-K dielectric |
| CN109902263B (zh) * | 2017-12-07 | 2022-12-13 | 北京大学深圳研究生院 | 判断有机半导体材料载流子传输各向异性程度的方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2994811A (en) * | 1959-05-04 | 1961-08-01 | Bell Telephone Labor Inc | Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction |
| US3302078A (en) * | 1963-08-27 | 1967-01-31 | Tung Sol Electric Inc | Field effect transistor with a junction parallel to the (111) plane of the crystal |
| US3370995A (en) * | 1965-08-02 | 1968-02-27 | Texas Instruments Inc | Method for fabricating electrically isolated semiconductor devices in integrated circuits |
| US3378783A (en) * | 1965-12-13 | 1968-04-16 | Rca Corp | Optimized digital amplifier utilizing insulated-gate field-effect transistors |
| US3407343A (en) * | 1966-03-28 | 1968-10-22 | Ibm | Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage |
| US3410132A (en) * | 1966-11-01 | 1968-11-12 | Gen Electric | Semiconductor strain gauge |
-
1967
- 1967-11-08 US US681413A patent/US3476991A/en not_active Expired - Lifetime
-
1968
- 1968-10-30 GB GB1229946D patent/GB1229946A/en not_active Expired
- 1968-11-06 ES ES359914A patent/ES359914A1/es not_active Expired
- 1968-11-07 BR BR203797/68A patent/BR6803797D0/pt unknown
- 1968-11-07 FR FR1592610D patent/FR1592610A/fr not_active Expired
- 1968-11-08 JP JP43081331A patent/JPS4839513B1/ja active Pending
- 1968-11-08 DE DE19681807857 patent/DE1807857A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR1592610A (es) | 1970-05-19 |
| US3476991A (en) | 1969-11-04 |
| DE1807857A1 (de) | 1969-07-24 |
| GB1229946A (es) | 1971-04-28 |
| BR6803797D0 (pt) | 1973-02-27 |
| JPS4839513B1 (es) | 1973-11-24 |
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