ES2879526T3 - Componente fotoactivo con orden de capas invertido y procedimiento para su producción - Google Patents
Componente fotoactivo con orden de capas invertido y procedimiento para su producción Download PDFInfo
- Publication number
- ES2879526T3 ES2879526T3 ES10725079T ES10725079T ES2879526T3 ES 2879526 T3 ES2879526 T3 ES 2879526T3 ES 10725079 T ES10725079 T ES 10725079T ES 10725079 T ES10725079 T ES 10725079T ES 2879526 T3 ES2879526 T3 ES 2879526T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- photoactive
- substrate
- component according
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 252
- 239000000463 material Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000009834 vaporization Methods 0.000 claims abstract description 20
- 230000008016 vaporization Effects 0.000 claims abstract description 20
- 239000012044 organic layer Substances 0.000 claims abstract description 8
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims abstract description 3
- 230000008569 process Effects 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 230000005525 hole transport Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 230000004308 accommodation Effects 0.000 abstract 2
- 230000032258 transport Effects 0.000 description 16
- 239000011368 organic material Substances 0.000 description 12
- 238000001556 precipitation Methods 0.000 description 11
- 239000007787 solid Substances 0.000 description 8
- 230000003993 interaction Effects 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- -1 spiroxane Chemical class 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005496 tempering Methods 0.000 description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- ADNPLDHMAVUMIW-CUZNLEPHSA-N substance P Chemical compound C([C@@H](C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCSC)C(N)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](CCCCN)NC(=O)[C@H]1N(CCC1)C(=O)[C@@H](N)CCCN=C(N)N)C1=CC=CC=C1 ADNPLDHMAVUMIW-CUZNLEPHSA-N 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- MQRCTQVBZYBPQE-UHFFFAOYSA-N 189363-47-1 Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MQRCTQVBZYBPQE-UHFFFAOYSA-N 0.000 description 2
- GSOFREOFMHUMMZ-UHFFFAOYSA-N 3,4-dicarbamoylnaphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=N)C(C(=N)O)=C(C(O)=O)C(C(O)=O)=C21 GSOFREOFMHUMMZ-UHFFFAOYSA-N 0.000 description 2
- WPUSEOSICYGUEW-UHFFFAOYSA-N 4-[4-(4-methoxy-n-(4-methoxyphenyl)anilino)phenyl]-n,n-bis(4-methoxyphenyl)aniline Chemical compound C1=CC(OC)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 WPUSEOSICYGUEW-UHFFFAOYSA-N 0.000 description 2
- PONZBUKBFVIXOD-UHFFFAOYSA-N 9,10-dicarbamoylperylene-3,4-dicarboxylic acid Chemical class C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=N)C2=C1C3=CC=C2C(=N)O PONZBUKBFVIXOD-UHFFFAOYSA-N 0.000 description 2
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- HKNRNTYTYUWGLN-UHFFFAOYSA-N dithieno[3,2-a:2',3'-d]thiophene Chemical class C1=CSC2=C1SC1=C2C=CS1 HKNRNTYTYUWGLN-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005188 flotation Methods 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 230000009878 intermolecular interaction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- MTUBTKOZCCGPSU-UHFFFAOYSA-N 2-n-naphthalen-1-yl-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N(C=1C=CC=CC=1)C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 MTUBTKOZCCGPSU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- RPHPLYFQXFWMRH-UHFFFAOYSA-N ctk2f8269 Chemical group C=12C3=CC=CC2=CC=CC=1C1=C2C=CC=CC2=CC2=C1C3=CC1=CC=CC=C21 RPHPLYFQXFWMRH-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- OLYIBSWMAQCHOP-UHFFFAOYSA-N nonacyclo[20.10.1.113,17.02,10.04,9.012,33.023,31.025,30.021,34]tetratriaconta-1(32),2,4,6,8,10,12(33),13,15,17(34),18,20,22,24,26,28,30-heptadecaene Chemical group C12=CC3=CC=CC=C3C2=CC2=C3C=C(C=CC=C4)C4=C3C=C3C2=C1C1=C2C3=CC=CC2=CC=C1 OLYIBSWMAQCHOP-UHFFFAOYSA-N 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002964 pentacenes Chemical class 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009024294 | 2009-06-05 | ||
| DE102009051142.3A DE102009051142B4 (de) | 2009-06-05 | 2009-10-29 | Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung |
| PCT/EP2010/057889 WO2010139803A1 (de) | 2009-06-05 | 2010-06-07 | Photoaktives bauelement mit invertierter schichtfolge und verfahren zu seiner herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2879526T3 true ES2879526T3 (es) | 2021-11-22 |
Family
ID=43049417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES10725079T Active ES2879526T3 (es) | 2009-06-05 | 2010-06-07 | Componente fotoactivo con orden de capas invertido y procedimiento para su producción |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20120125419A1 (enExample) |
| EP (1) | EP2438633B1 (enExample) |
| JP (1) | JP2012529169A (enExample) |
| KR (1) | KR20120034718A (enExample) |
| CN (1) | CN102460761A (enExample) |
| DE (1) | DE102009051142B4 (enExample) |
| ES (1) | ES2879526T3 (enExample) |
| WO (1) | WO2010139803A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012105812A1 (de) * | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Elektrodenanordnung für optoelektronische Bauelemente |
| DE102012106607B4 (de) | 2012-07-20 | 2024-04-04 | Heliatek Gmbh | Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen |
| US9660207B2 (en) | 2012-07-25 | 2017-05-23 | Samsung Electronics Co., Ltd. | Organic solar cell |
| DE102012106815A1 (de) | 2012-07-26 | 2014-01-30 | Heliatek Gmbh | Verfahren zur Kontaktierung optoelektronischer Bauelemente |
| US9691163B2 (en) | 2013-01-07 | 2017-06-27 | Wexenergy Innovations Llc | System and method of measuring distances related to an object utilizing ancillary objects |
| US10196850B2 (en) | 2013-01-07 | 2019-02-05 | WexEnergy LLC | Frameless supplemental window for fenestration |
| US10883303B2 (en) | 2013-01-07 | 2021-01-05 | WexEnergy LLC | Frameless supplemental window for fenestration |
| US8923650B2 (en) | 2013-01-07 | 2014-12-30 | Wexenergy Innovations Llc | System and method of measuring distances related to an object |
| US9230339B2 (en) | 2013-01-07 | 2016-01-05 | Wexenergy Innovations Llc | System and method of measuring distances related to an object |
| US9845636B2 (en) | 2013-01-07 | 2017-12-19 | WexEnergy LLC | Frameless supplemental window for fenestration |
| KR101590574B1 (ko) | 2013-07-31 | 2016-02-01 | 주식회사 엘지화학 | 벌크이종접합 표면 물성의 조절 방법 및 이를 이용한 다층 구조 태양전지 |
| DE102013111164B4 (de) | 2013-10-09 | 2024-10-24 | Heliatek Gmbh | Verfahren zur Herstellung von Kontaktlöchern |
| DE112015004366A5 (de) | 2014-09-26 | 2017-06-08 | Heliatek Gmbh | Verfahren zum aufbringen einer schutzschicht, schutzschicht selbst und halbfabrikat mit einer schutzschicht |
| JP2016106437A (ja) * | 2016-03-17 | 2016-06-16 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
| KR20180081646A (ko) * | 2017-01-06 | 2018-07-17 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
| JP7212037B2 (ja) | 2017-05-30 | 2023-01-24 | ウェクスエナジー リミテッド ライアビリティ カンパニー | 採光用開口のためのフレームレス補助窓 |
| CN110854269B (zh) * | 2019-10-29 | 2021-09-28 | 北京大学 | 一种小分子有机太阳能电池器件及其制备方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1085947A (en) | 1977-08-02 | 1980-09-16 | Ching W. Tang | Multilayer organic photovoltaic elements |
| US5093698A (en) | 1991-02-12 | 1992-03-03 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
| US5769963A (en) * | 1995-08-31 | 1998-06-23 | Canon Kabushiki Kaisha | Photovoltaic device |
| DE19905694A1 (de) | 1998-11-27 | 2000-08-17 | Forschungszentrum Juelich Gmbh | Bauelement |
| BRPI0408493B1 (pt) | 2003-03-19 | 2018-09-18 | Heliatek Gmbh | componente fotoativo orgânico |
| DE10338406A1 (de) | 2003-08-18 | 2005-03-24 | Novaled Gmbh | Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung |
| DE10347856B8 (de) | 2003-10-10 | 2006-10-19 | Colorado State University Research Foundation, Fort Collins | Halbleiterdotierung |
| US7061011B2 (en) | 2003-11-26 | 2006-06-13 | The Trustees Of Princeton University | Bipolar organic devices |
| DE10357044A1 (de) | 2003-12-04 | 2005-07-14 | Novaled Gmbh | Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten |
| DE102004010954A1 (de) | 2004-03-03 | 2005-10-06 | Novaled Gmbh | Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
| DE102005010979A1 (de) * | 2005-03-04 | 2006-09-21 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
| DE102005010978A1 (de) * | 2005-03-04 | 2006-09-07 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
| WO2008077615A1 (de) * | 2006-12-22 | 2008-07-03 | Novaled Ag | Elektronisches bauelement mit mindestens einer organischen schichtanordnung |
| DE102006053320B4 (de) | 2006-11-13 | 2012-01-19 | Novaled Ag | Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter |
| DE102006054524B4 (de) | 2006-11-20 | 2022-12-22 | Novaled Gmbh | Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand |
| KR101479803B1 (ko) * | 2007-07-23 | 2015-01-06 | 바스프 에스이 | 광전 탠덤 전지 |
| DE102008051737B4 (de) | 2007-10-24 | 2022-10-06 | Novaled Gmbh | Quadratisch planare Übergangsmetallkomplexe, organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente, die diese umfassen und Verwendung derselben |
| AU2008320815B2 (en) * | 2007-10-31 | 2014-07-03 | Basf Se | Use of halogenated phthalocyanines |
-
2009
- 2009-10-29 DE DE102009051142.3A patent/DE102009051142B4/de active Active
-
2010
- 2010-06-07 US US13/375,597 patent/US20120125419A1/en not_active Abandoned
- 2010-06-07 WO PCT/EP2010/057889 patent/WO2010139803A1/de not_active Ceased
- 2010-06-07 JP JP2012513638A patent/JP2012529169A/ja active Pending
- 2010-06-07 EP EP10725079.7A patent/EP2438633B1/de active Active
- 2010-06-07 KR KR1020127000392A patent/KR20120034718A/ko not_active Withdrawn
- 2010-06-07 ES ES10725079T patent/ES2879526T3/es active Active
- 2010-06-07 CN CN2010800248030A patent/CN102460761A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2438633B1 (de) | 2021-05-26 |
| DE102009051142B4 (de) | 2019-06-27 |
| KR20120034718A (ko) | 2012-04-12 |
| EP2438633A1 (de) | 2012-04-11 |
| DE102009051142A1 (de) | 2010-12-09 |
| WO2010139803A1 (de) | 2010-12-09 |
| JP2012529169A (ja) | 2012-11-15 |
| US20120125419A1 (en) | 2012-05-24 |
| CN102460761A (zh) | 2012-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES2879526T3 (es) | Componente fotoactivo con orden de capas invertido y procedimiento para su producción | |
| Chen et al. | Interfacial dipole in organic and perovskite solar cells | |
| Chen et al. | Organic N‐type molecule: managing the electronic states of bulk perovskite for high‐performance photovoltaics | |
| ES2587082T3 (es) | Elemento de construcción fotoactivo con capas orgánicas | |
| Luo et al. | Iodide-reduced graphene oxide with dopant-free spiro-OMeTAD for ambient stable and high-efficiency perovskite solar cells | |
| JP6310014B2 (ja) | 有機層を含む光活性部品 | |
| DK2398056T3 (en) | Organic solar cell with multiple transportlagsystemer | |
| US9142781B2 (en) | Compound for organic electronic device | |
| US8816332B2 (en) | Organic photovoltaic cell incorporating electron conducting exciton blocking layers | |
| BRPI0611785A2 (pt) | células fotovoltaicas de heteroestrutura orgánica dupla com camada bloqueadora de éxciton portador recìproco | |
| AU2004221377A1 (en) | Photoactive component comprising organic layers | |
| US20130240840A1 (en) | Metal oxide charge transport material doped with organic molecules | |
| JP5614685B2 (ja) | 有機半導体素子 | |
| CN105308768B (zh) | 光电部件 | |
| US20110220200A1 (en) | Organic Photoactive Device | |
| CN102197504A (zh) | 有机薄膜太阳能电池 | |
| CN102460714A (zh) | 具有长程有序有机膜的有机电子器件的结构模板化 | |
| JP6449766B2 (ja) | 光電子デバイス用透明電極 | |
| US20140014183A1 (en) | Organic thin-film solar cell and organic thin-film solar cell module | |
| Lin et al. | Black phosphorus quantum dots based heterostucture boosting electron extraction for non-fullerene organic solar cells surpassing 15% power conversion efficiency | |
| US20130206218A1 (en) | Photovoltaic Devices with Enhanced Exciton Diffusion | |
| Lee | Perovskite and organic bulk heterojunction integrated solar cells: a mini review | |
| JP2011233692A (ja) | 光電変換素子、有機太陽電池及びそれらを用いた光電変換装置 | |
| Khan et al. | Elucidation of hierarchical metallophthalocyanine buffer layers in bulk heterojunction solar cells | |
| Pfuetzner et al. | Improved photon harvesting by employing C [sub] 70 [/sub] in bulk heterojunction solar cells |