Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
  • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
  • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
  • H10K85/211—Fullerenes, e.g. C60
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/649—Aromatic compounds comprising a hetero atom
  • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the invention relates to a photoactive component with organic layers, in particular a solar cell according to the preamble of claim 1.
• Organic solar cells consist of a sequence of thin layers (typically 1 ⁇ m to 1 ⁇ m) of organic materials, which are preferably vapor-deposited in vacuo or spin-coated from a solution.
• the electrical contacting can be effected by metal layers, transparent conductive oxides (TCOs) and / or transparent conductive polymers (PEDOT-PSS, PANI).
• a solar cell converts light energy into electrical energy.
• the term photoactive also refers to the conversion of light energy into electrical energy.
• solar cells do not directly generate free charge carriers by light, but excitons are first formed, ie electrically neutral excitation states (bound electron-hole pairs). Only in a second step, these excitons are separated into free charge carriers, which then contribute to the electric current flow.
• n or p denotes an n- or p-type doping, which leads to an increase in the density of free electrons or holes in the thermal equilibrium state.
• the n-layer (s) or p-layer (s) are nominally undoped and only due to the material properties (eg different mobilities), due to unknown impurities (eg remaining residues from the synthesis, decomposition or Reaction products during coating production) or due to influences of the environment (eg adjacent layers, diffusion of metals or other organic materials, gas doping from the ambient atmosphere) preferably have n-conductive or preferably p-conductive properties. In this sense, such layers are primarily to be understood as transport layers.
• i-layer designates a nominally undoped layer (intrinsic layer).
• One or more i-layers may in this case be layers of a material as well as a mixture of two materials (so-called interpenetrating networks or bulk heterojunction, M. Hiramoto et al., Mol., Cryst., Liq., Cryst., 2006, 444). pp. 33-40).
• the light incident through the transparent base contact generates excitons in the i-layer or in the n- / p-layer (bound
• Electron-hole pairs These excitons can only be separated by very high electric fields or at suitable interfaces. In organic solar cells, sufficiently high fields are not available, so that all promising concepts for organic solar cells based on the exciton separation at photoactive interfaces.
• the excitons pass through diffusion to such an active interface, where electrons and holes are separated.
• the material that receives the electrons is called the acceptor, and the material that picks up the hole is called the donor (or donor).
• the separating interface may be between the p (n) layer and the i-layer or between two i-layers. In the built-in electric field of the solar cell, the electrons now become the n-region and the
• the transport layers are transparent or largely transparent materials with a wide band gap (wide-gap), as described, for example, in WO 2004083958.
• wide-gap materials in this case materials are referred to, their absorption maximum in the wavelength range ⁇ 450nm, preferably at ⁇ 400nm.
• the task of absorbing light either takes on only one of the components or both.
• the advantage of mixed layers is that the generated excitons only travel a very short distance until they reach a domain boundary where they are separated. The removal of the electrons or holes is carried out separately in the respective materials. Since in the mixed layer the materials are in contact with each other everywhere, it is crucial in this concept that the separate charges have a long service life on the respective material and that there are closed percolation paths for each type of charge to the respective contact from each location.
• US Pat. No. 5,093,698 discloses the doping of organic materials. By admixing an acceptor-like or donor-like dopant, the equilibrium charge carrier concentration in the layer increased and the conductivity increased. According to US 5,093,698, the doped layers are used as injection layers at the interface to the contact materials in electroluminescent devices. Similar doping approaches are analogously useful for solar cells.
• the photoactive i-layer may be a double layer (EP0000829) or a mixed layer (Hiramoto, Appl. Phys. Lett., 58, 106e (1991)). Also known is a combination of double and mixed layers (Hiramoto, Appl. Lett., 58, 1062 (1991), US 6,559,375). It is also known that the mixing ratio in different areas of the mixed layer is different (US 20050110005) or the mixing ratio has a gradient.
• the photoactive mixed layers may be partially crystalline (Hiramoto, MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 444, 33-40 (2006)).
• the degree of crystallinity can be changed by the choice of the substrate temperature during the vapor deposition. An increased substrate temperature usually leads to more crystalline fraction or larger crystallites.
• the component can be exposed to an elevated temperature (Peumans, Nature, 425, 158 (2003)). This process usually also leads to increased crystallinity.
• OPD organic vapor-phase deposition technique
• solar cells with an ip structure are known from the literature (Drechsel, Org. Electron., 5, 175 (2004); J. Drechsel, Synthet. Metal., 127, 201-205 (2002)).
• the photoactive mixed layer is a mixed layer of ZnPc and C60. These two materials have very similar evaporation temperatures. The problem described below therefore does not occur in this system, so that the content of this patent is unaffected.
• evaporation temperature is understood to mean that temperature which is required for a given evaporator geometry (reference: source with a circular opening (learning diameter) at a distance of 30 cm from a vertically above it
• Substrate and a vacuum in the range 10 ⁇ 4 to 10 ⁇ 10 mbar to achieve a vapor deposition rate of 0.1nm / s at the position of the substrate. It is irrelevant whether this is an evaporation in the narrower sense (transition from the liquid phase to the gas phase) or a sublimation.
• such structures are preferably formed in which the intermolecular Interactions within the layer are maximized so that the interfaces that can undergo strong interactions are avoided at the layer surface.
• the "weakly interacting component" is the donor component of the mixed layer, there is a tendency for a very thin layer (ie, at least one monolayer) to form on the surface, especially when grown on a heated substrate or post-annealed, almost exclusively
• This segregation or “floating” can also be achieved by other processes such as, for example, solvent treatment (during the production of the layer or subsequently) or by the method of depositing a layer by means of organic vapor phase deposition (Organic Vapor Phase Deposition (US Pat.
• the "floating" monolayer of the donor component thus has inferior electron transport properties and hinders the removal of photogenerated electrons in a pin structure, whereas removal of photogenerated holes in this direction is easily possible possible, as it is indeed in the donor component to a preferred holes ⁇ transporting material.
• the above-described problem preferably occurs when the donor material has a vaporization temperature in a vacuum has, which is at least 15O 0 C lower than the evaporation temperature of the acceptor material. Quite possibly it is also possible that even with an evaporation difference of 100 0 C or less, a "floating" takes place.
• the anode is typically a transparent conductive oxide (often indium tin oxide, abbreviated to ITO, but it may be ZnOiAl), but it may also be a metal layer or a layer of a conductive polymer.
• a transparent conductive oxide often indium tin oxide, abbreviated to ITO, but it may be ZnOiAl
• a metal layer or a layer of a conductive polymer After deposition of the organic layer system comprising the photoactive mixed layer, a - usually metallic - cathode is deposited.
• This construction referred to herein as non-inverted, entails that the holes formed in the photoactive mixed layer must be removed towards the substrate (anode) while the photogenerated electrons must move away from the substrate towards the cathode.
• this is problematic, as described above, when it comes to "floating" of the donor component in the deposition or aftertreatment of the mixed layer.
• the problem with a donor-acceptor combination where there is at least a partial "floating" of the donor material in the blend layer is both to achieve good ordering in the blend and to avoid transport problems at the interface of the blend.
• the invention is therefore based on the object to provide a photoactive device that overcomes the disadvantages described above and thereby has an increased efficiency of the device and possibly an improved life.
• Another object of the invention is to provide a method for producing such a photoactive device.
• the problem is solved by going to an inverted layer sequence, in which the deposition on the cathode (n-side bottom, eg n-ip structure) takes place and the photogenerated electrons must leave the mixed layer in the direction of the substrate and the photogenerated electrons in the direction of the counter electrode, both of which are possible without problems.
• a preferred embodiment of the invention consists of an organic nip solar cell or organic nipnip tandem solar cell or nip multiple solar cell, as shown in WO 2004083958.
• the device has contact problems with the electrode and / or the counterelectrode located on the substrate.
• the electrode located on the substrate has one Contact to the p-layer and the counter electrode make contact with the n-layer.
• These contacts work very well or the contact systems and contact materials have been optimized so that no losses occur here.
• the two new contact systems electrode / n-layer and p-layer / counterelectrode can now be optimized again (for example by suitable choice of materials or suitable production conditions).
• Another possible solution is to install a conversion contact (pn or np) on the electrodes so that the old contact systems electrode / p-layer and n-layer / counterelectrode are again obtained.
• Possible structures are for this purpose e.g. pnip, nipn or pnipn.
• a further embodiment of the component according to the invention consists in that there is still a p-doped layer between the first electron-conducting layer (n-layer) and the electrode located on the substrate, so that it is a pnip or pnip.
• a p-doped layer may still be present in the component between the photoactive i-layer and the electrode located on the substrate, so that it is a pip or pi structure, wherein the additional p doped layer has a Fermimotor which is not more than 0.4 eV, but preferably less than 0.3 eV below
• Electron transport levels of the i-layer is, so that it can lead to low-loss electron extraction from the i-layer in this p-layer.
• a further embodiment of the component according to the invention consists in that there is still an n-layer system between the p-doped layer and the counterelectrode, so that it is a nipn or ipn structure, wherein preferably the doping is selected to be so high that the direct pn contact has no blocking effect, but it comes to low-loss recombination, preferably through a tunneling process.
• an n-layer system may be present in the device between the intrinsic, photoactive layer and the counterelectrode, so that it is a nin- or in-structure, wherein the additional n-doped layer has a Fermi level position, which is at most 0.4 eV, but preferably less than 0.3 eV, above the hole transport interval of the i-layer, so that loss-poor hole extraction from the i-layer can occur in this n-layer.
• a further embodiment of the component according to the invention consists in that the component contains an n-layer system and / or a p-layer system, so that it is a pnipn, pnin, pipn or pin structure, which is characterized in all cases in that, irrespective of the type of line, the layer adjacent to the substrate side of the photoactive i-layer has a smaller thickness Thermal work function has as the side facing away from the substrate to the i-layer adjacent layer, so that photogenerated electrons are preferably transported away towards the substrate when no external voltage is applied to the device.
• a plurality of conversion contacts are connected in series, so that e.g. is an npnipn, pnipnp, npnipnp, pnpnipnpn or pnpnpnipnpnpn structure.
• the device may be a tandem cell of a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin, or pipn structures in which several independent combinations, at least one of them i-layer are stacked on top of each other (cross-combinations).
• this is designed as a pnipnipn tandem cell.
• a certain number of the i-mixed layers on heated substrate are prepared and the remaining i-mixed layers, while the substrate is a lower temperature (preferably ⁇ 6O 0 C) or room temperature.
• the i-mixed layers it is also possible for the i-mixed layers to be produced alternately on a heated substrate and at lower temperatures or room temperature by alternately heating and cooling the substrate.
• the organic photoactive component is designed as an organic solar cell, which is embodied with an electrode and a counterelectrode and between the electrodes of at least one organic photoactive i-layer system.
• This i-layer photoactive system contains at least one mixed layer of a donor material and an acceptor material which form a donor-acceptor system.
• the donor and acceptor material of the mixed layer contains non-polymeric materials, so-called small molecules.
• the donor material has a vaporization temperature in a vacuum, which is at least 15O 0 C lower than the evaporation temperature of the acceptor material.
• the organic solar cell has an inverted layer sequence. This can be formed as a nip, ip or ni structure from each of an n, i or p layer system, wherein the organic photoactive i-
• Layer system is applied either directly on the cathode or on an electron-conducting n-material system.
• the acceptor material is at least partially in the mixed layer crystalline form.
• the donor material in the blend layer is at least partially in crystalline form.
• both are
• Acceptor material and the donor material in the mixed layer at least partially in crystalline form.
• the acceptor material has an absorption maximum in the wavelength range> 450 nm.
• the donor material has an absorption maximum in the wavelength range> 450 nm.
• the photoactive i-layer system contains, in addition to the said mixed layer, further photoactive single or mixed layers.
• the n-material system consists of one or more layers.
• the p-material system consists of one or more layers.
• the n-type material system includes one or more doped wide-gap layers.
• the term wide-gap layers defines layers with an absorption maximum in the wavelength range ⁇ 450 nm.
• the p-type material system includes one or more doped wide-gap layers.
• light traps are for Magnification optical path of the incident light formed in the active system.
• the light trap is realized by having a doped wide-gap layer having a smooth interface with the i-layer and a periodically microstructured interface for contact.
• the light trap is realized in that the component is constructed on a periodically microstructured substrate and the homogeneous function of the component, ie a short-circuit-free
• Ultrathin components have an increased risk of forming local short circuits on structured substrates, such that ultimately the functionality of the entire component is jeopardized by such obvious inhomogeneity. This short circuit risk is reduced by the use of the doped transport layers.
• the component between the first electron-conducting layer (n-layer) and the electrode located on the substrate contains a p-doped layer, so that it is a pnip or pni structure.
• the component between the photoactive i-layer and the electrode located on the substrate contains a p-doped layer, so that it is a pip or pi structure, wherein the additional p-doped layer has a fermine level, which is at most 0.4 eV, but preferably less than 0.3 eV, below the electron transport level of the i-layer.
• the component contains a n-layer system between the p-doped layer and the counter electrode, so that it is a nipn or ipn structure.
• the component contains an n-layer system between the photoactive i-layer and the counterelectrode, so that it is a n or in ⁇ structure, wherein the additional n-doped layer has a Fermicertainlage which is at most 0, 4eV, but preferably less than 0.3eV is above the hole transport level of the i-layer.
• the component contains an n-layer system and / or a p-layer system, so that it is a pnipn, pnin, pipn or p-i-n structure.
• the additional p-material system and / or the additional n-material system contains one or more doped wide-gap layers.
• the component contains further n-layer systems and / or p-layer systems, such as e.g. is an npnipn, pnipnp, npnipnp, pnpnipnpn, or pnpnpnipnpnpn structure.
• one or more of the further p-material systems and / or the further n-material systems contains one or more doped wide-gap layers.
• the component contains further n-layer systems and / or p-layer systems, such as e.g. is an npnipn, pnipnp, npnipnp, pnpnipnpn, or pnpnpnipnpnpn structure.
• one or more of the further p-material systems and / or the further n-material systems contains one or more doped wide-gap Layers .
• the component is a tandem or multiple structure.
• the device is a tandem cell of a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin or pipn structures.
• the organic materials used are small molecules.
• small molecules are used in the sense of
• Invention understood monomers that can be evaporated and thus deposited on the substrate.
• the organic materials are at least partially polymers, but at least one photoactive i-layer is formed from small molecules.
• the acceptor material is a material from the group of fullerenes or fullerene derivatives (preferably C60 or C70) or a PTCDI derivative (perylene-3,4,9,10-bis (dicarboximide) derivative).
• the donor material is an oligomer, in particular an oligomer according to WO2006092134, a porphyrin derivative, a pentacene derivative or a perylene derivative, such as DIP (di-indeno-perylene), DBP (di-benzperylene).
• DIP di-indeno-perylene
• DBP di-benzperylene
• the p-material system contains a TPD derivative (triphenylamine dimer), a spiro compound such as spiropyrane, spiroxazine, MeO-TPD
• N, N, N ', N'-tetrakis (4-methoxyphenyl) benzidine di-NPB (N, N'-diphenyl-N, N x -bis (N, N'-di (1-naphthyl) - N, N'-diphenyl
• the n-material system contains fullerenes such as C60, C70; NTCDA (1,4,5,8-naphthalene-tetracarboxylic dianhydride), NTCDI (naphthalenetetracarboxylic diimide) or PTCDI (perylene-3,4,9,10-bis (dicarboximide).
• fullerenes such as C60, C70; NTCDA (1,4,5,8-naphthalene-tetracarboxylic dianhydride), NTCDI (naphthalenetetracarboxylic diimide) or PTCDI (perylene-3,4,9,10-bis (dicarboximide).
• the p-type material system contains a p-dopant, this p-dopant F4-TCNQ, a p-dopant as described in DE10338406, DE10347856, DE10357044, DE102004010954, DE102006053320, DE102006054524 and DE102008051737 or a transition metal oxide (VO, WO , MoO, etc.).
• a transition metal oxide VO, WO , MoO, etc.
• the n-type material system contains an n-dopant, where this n-dopant is a TTF derivative (tetrathiafulvalene derivative) or DTT derivative (dithienothiophene), an n-dopant as described in DE10338406,
• one electrode is transparent with a transmission> 80% and the other electrode is reflective with a reflection> 50%.
• the device is semitransparent with a transmission of 10-80%.
• the electrodes consist of a metal (eg Al, Ag, Au or a combination of these), a conductive oxide, in particular ITO, ZnOiAl or another TCO (Transparent Conductive Oxide), a conductive polymer, in particular PEDOT / PSS Poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) or PANI (polyaniline), or a combination of these materials.
• a metal eg Al, Ag, Au or a combination of these
• a conductive oxide in particular ITO, ZnOiAl or another TCO (Transparent Conductive Oxide)
• a conductive polymer in particular PEDOT / PSS Poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) or PANI (polyaniline), or a combination of these materials.
• the organic materials used have a low melting point, preferably ⁇ 100 0 C, on.
• the organic materials used have a low glass transition temperature, preferably ⁇ 15O 0 C on.
• the organic materials used have multiple crystal phases and have a phase transition temperature which is similar to (+/- 3O 0 C) the substrate temperature at the deposition or the temperature of the post-anneal.
• Annealing is understood as meaning the heating of a solid to a temperature below the melting temperature. This happens over a long period of time (a few minutes to a few days), compensating for structural defects and improving the near and far order crystal structure. Thus, the process of melting and extremely slow cooling to adjust the crystal structure is avoided.
• the deposition of the mixed layer takes place by means of the method of the organic Gas phase deposition (Organic Vapor Phase Deposition (OVPD)).
• OVPD Organic Vapor Phase Deposition
• the deposition of the mixed layer takes place on a heated substrate, which preferably has a temperature> 8O 0 C.
• the mixed layer is tempered after the deposition, the annealing temperature being at least 2O 0 C above the substrate temperature during the deposition.
• the mixed layer is treated with solvent vapors during or after production.
• a certain number of the i-layers on heated substrate (preferably between 7O 0 C and 14O 0 C) prepared and the remaining i-layers are produced while the substrate is a lower temperature (preferably ⁇ 6O 0 C) or room temperature.
• FIG. 5 shows a current-voltage characteristic curve for a mip solar cell with different layer thicknesses of the mixed layers DCV5T: C60 produced at room temperature, in FIG
• FIG. 1 shows an X-ray diffraction measurement (XRD) on DCV5T films (on SiIOO).
• the pure DCV5T layer ( ⁇ ⁇ '-bis (2,2-dicyanovinyl) quin-quethiophene layer) (dashed and dark solid line) shows a peak at 8.15 ° and 8.65 °, respectively.
• the peak is significantly larger (dashed line) in the sample evaporated on a heated substrate (100 ° C.) compared to the sample deposited at room temperature (RT, dark solid line).
• RT room temperature
• FIG. 2 uses a pin-type solar cell with the structure ITO / p-HTL / HTL / DCV5T: C60 / ETL / n-ETL / A1.
• the mixed layer DCV5T: C60 is produced once at 9O 0 C substrate temperature (dashed curves, light and dark curves) and once at room temperature (3O 0 C, solid curves, light and dark curves).
• n-ETL n-doped electron transport layer
• p-HTL p-doped hole transport layer
• FIG. 3 uses a nip solar cell with the structure ITO / n-ETL / ETL / DCV5T: C60 / HTL / p-HTL / Au.
• the mixed layer DCV5T: C60 is produced once at 9O 0 C substrate temperature (dashed characteristic curves, light and dark characteristics) and once at room temperature (3O 0 C, solid curves, light and dark characteristics).
• the solar cell which has been produced at 9O 0 C substrate temperature, characterized by both a higher
• this thin DCV5T can even contribute to the photocurrent in this nip construction and thus further improve the properties of the component.
• FIG. 4 uses a mip solar cell with the structure ITO / ETL / DCV5T: C60 / HTL / p-HTL / Au.
• the mixed layer DCV5T: C60 was produced at 9O 0 C substrate temperature (light characteristic). Even in a mip structure, a good component with a good fill factor can be realized.
• FIG. 5 shows a mip solar cell with the structure ITO / C60 / DCV5T: C60 / p-BPAPF / p-ZnPc (p-zinc phthalocyanine) / Au with different structures
• the mixed layers DCV5T: C60 were (30 0 C) at room temperature.
• the Layer thicknesses of the mixed layers are 10 nm (continuous characteristic curves, light and dark characteristic curves) and 20 nm (dashed characteristic curves, light and dark characteristics).
• the device with the thicker mixed layer is no better than the thinner mixed layer, although the former absorbs more light.
• the cause is the poor crystallinity of the mixed layer produced at room temperature and the resulting problems in the removal of the charge carriers.
• FIG. 6 uses a mip solar cell with the structure ITO / ETL / DCV5T: C60 / HTL / p-HTL / Au with different layer thicknesses of the mixed layer.
• the mixed layers DCV5T: C60 were prepared at 9O 0 C substrate temperature.
• the layer thicknesses of the mixed layers are lOnm (solid curves, light and dark curves) and 20nm (dashed curves, light and dark curves.
• Short-circuit current is significantly greater and the fill factor has only slightly reduced, so that the device with the thicker mixed layer has a greater efficiency.
• a pnipnipn tandem cell with mixed layers ZnPc: C60 and DCV5T: C60 is used in FIG. 7, wherein the mixed layers have been applied at 3O 0 C or 9O 0 C substrate temperature.
• the structure of the tandem cell is ITO / p-HTL / n-ETL / ETL / ZnPc: C60 / p-HTL / n-ETL / ETL / DCV5T: C60 / HTL / p-HTL / n-ET / Al.

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• 2009
  • 2009-10-29 DE DE102009051142.3A patent/DE102009051142B4/de active Active
• 2010
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  • 2010-06-07 WO PCT/EP2010/057889 patent/WO2010139803A1/de not_active Ceased
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  • 2010-06-07 EP EP10725079.7A patent/EP2438633B1/de active Active
  • 2010-06-07 KR KR1020127000392A patent/KR20120034718A/ko not_active Withdrawn
  • 2010-06-07 ES ES10725079T patent/ES2879526T3/es active Active
  • 2010-06-07 CN CN2010800248030A patent/CN102460761A/zh active Pending

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