JP2012529169A - 逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法 - Google Patents

逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法 Download PDF

Info

Publication number
JP2012529169A
JP2012529169A JP2012513638A JP2012513638A JP2012529169A JP 2012529169 A JP2012529169 A JP 2012529169A JP 2012513638 A JP2012513638 A JP 2012513638A JP 2012513638 A JP2012513638 A JP 2012513638A JP 2012529169 A JP2012529169 A JP 2012529169A
Authority
JP
Japan
Prior art keywords
type
layer
photoactive
photoactive component
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012513638A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012529169A5 (enExample
Inventor
メンニヒ・ベルト
ウーリヒ・クリスティアン
ヴァルツァー・カルステン
プファイファー・マルティーン
ヴィナンツ・ダーフィット
Original Assignee
ヘリアテク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヘリアテク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング filed Critical ヘリアテク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング
Publication of JP2012529169A publication Critical patent/JP2012529169A/ja
Publication of JP2012529169A5 publication Critical patent/JP2012529169A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2012513638A 2009-06-05 2010-06-07 逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法 Pending JP2012529169A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009024294.5 2009-06-05
DE102009024294 2009-06-05
DE102009051142.3A DE102009051142B4 (de) 2009-06-05 2009-10-29 Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung
DE102009051142.3 2009-10-29
PCT/EP2010/057889 WO2010139803A1 (de) 2009-06-05 2010-06-07 Photoaktives bauelement mit invertierter schichtfolge und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
JP2012529169A true JP2012529169A (ja) 2012-11-15
JP2012529169A5 JP2012529169A5 (enExample) 2013-07-04

Family

ID=43049417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012513638A Pending JP2012529169A (ja) 2009-06-05 2010-06-07 逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法

Country Status (8)

Country Link
US (1) US20120125419A1 (enExample)
EP (1) EP2438633B1 (enExample)
JP (1) JP2012529169A (enExample)
KR (1) KR20120034718A (enExample)
CN (1) CN102460761A (enExample)
DE (1) DE102009051142B4 (enExample)
ES (1) ES2879526T3 (enExample)
WO (1) WO2010139803A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012105812A1 (de) * 2012-07-02 2014-01-02 Heliatek Gmbh Elektrodenanordnung für optoelektronische Bauelemente
DE102012106607B4 (de) 2012-07-20 2024-04-04 Heliatek Gmbh Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen
US9660207B2 (en) 2012-07-25 2017-05-23 Samsung Electronics Co., Ltd. Organic solar cell
DE102012106815A1 (de) 2012-07-26 2014-01-30 Heliatek Gmbh Verfahren zur Kontaktierung optoelektronischer Bauelemente
US9691163B2 (en) 2013-01-07 2017-06-27 Wexenergy Innovations Llc System and method of measuring distances related to an object utilizing ancillary objects
US10196850B2 (en) 2013-01-07 2019-02-05 WexEnergy LLC Frameless supplemental window for fenestration
US10883303B2 (en) 2013-01-07 2021-01-05 WexEnergy LLC Frameless supplemental window for fenestration
US8923650B2 (en) 2013-01-07 2014-12-30 Wexenergy Innovations Llc System and method of measuring distances related to an object
US9230339B2 (en) 2013-01-07 2016-01-05 Wexenergy Innovations Llc System and method of measuring distances related to an object
US9845636B2 (en) 2013-01-07 2017-12-19 WexEnergy LLC Frameless supplemental window for fenestration
KR101590574B1 (ko) 2013-07-31 2016-02-01 주식회사 엘지화학 벌크이종접합 표면 물성의 조절 방법 및 이를 이용한 다층 구조 태양전지
DE102013111164B4 (de) 2013-10-09 2024-10-24 Heliatek Gmbh Verfahren zur Herstellung von Kontaktlöchern
DE112015004366A5 (de) 2014-09-26 2017-06-08 Heliatek Gmbh Verfahren zum aufbringen einer schutzschicht, schutzschicht selbst und halbfabrikat mit einer schutzschicht
JP2016106437A (ja) * 2016-03-17 2016-06-16 株式会社半導体エネルギー研究所 光電変換装置
KR20180081646A (ko) * 2017-01-06 2018-07-17 삼성디스플레이 주식회사 유기 발광 소자
JP7212037B2 (ja) 2017-05-30 2023-01-24 ウェクスエナジー リミテッド ライアビリティ カンパニー 採光用開口のためのフレームレス補助窓
CN110854269B (zh) * 2019-10-29 2021-09-28 北京大学 一种小分子有机太阳能电池器件及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008077615A1 (de) * 2006-12-22 2008-07-03 Novaled Ag Elektronisches bauelement mit mindestens einer organischen schichtanordnung
JP2008532301A (ja) * 2005-03-04 2008-08-14 へリアテック ゲーエムベーハー 有機光活性装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1085947A (en) 1977-08-02 1980-09-16 Ching W. Tang Multilayer organic photovoltaic elements
US5093698A (en) 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
US5769963A (en) * 1995-08-31 1998-06-23 Canon Kabushiki Kaisha Photovoltaic device
DE19905694A1 (de) 1998-11-27 2000-08-17 Forschungszentrum Juelich Gmbh Bauelement
BRPI0408493B1 (pt) 2003-03-19 2018-09-18 Heliatek Gmbh componente fotoativo orgânico
DE10338406A1 (de) 2003-08-18 2005-03-24 Novaled Gmbh Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung
DE10347856B8 (de) 2003-10-10 2006-10-19 Colorado State University Research Foundation, Fort Collins Halbleiterdotierung
US7061011B2 (en) 2003-11-26 2006-06-13 The Trustees Of Princeton University Bipolar organic devices
DE10357044A1 (de) 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
DE102004010954A1 (de) 2004-03-03 2005-10-06 Novaled Gmbh Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
DE102005010979A1 (de) * 2005-03-04 2006-09-21 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
DE102006053320B4 (de) 2006-11-13 2012-01-19 Novaled Ag Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter
DE102006054524B4 (de) 2006-11-20 2022-12-22 Novaled Gmbh Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand
KR101479803B1 (ko) * 2007-07-23 2015-01-06 바스프 에스이 광전 탠덤 전지
DE102008051737B4 (de) 2007-10-24 2022-10-06 Novaled Gmbh Quadratisch planare Übergangsmetallkomplexe, organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente, die diese umfassen und Verwendung derselben
AU2008320815B2 (en) * 2007-10-31 2014-07-03 Basf Se Use of halogenated phthalocyanines

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008532301A (ja) * 2005-03-04 2008-08-14 へリアテック ゲーエムベーハー 有機光活性装置
WO2008077615A1 (de) * 2006-12-22 2008-07-03 Novaled Ag Elektronisches bauelement mit mindestens einer organischen schichtanordnung

Also Published As

Publication number Publication date
EP2438633B1 (de) 2021-05-26
DE102009051142B4 (de) 2019-06-27
KR20120034718A (ko) 2012-04-12
EP2438633A1 (de) 2012-04-11
DE102009051142A1 (de) 2010-12-09
WO2010139803A1 (de) 2010-12-09
US20120125419A1 (en) 2012-05-24
ES2879526T3 (es) 2021-11-22
CN102460761A (zh) 2012-05-16

Similar Documents

Publication Publication Date Title
JP2012529169A (ja) 逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法
Chen et al. Interfacial dipole in organic and perovskite solar cells
Wang et al. Energy level alignment at interfaces in metal halide perovskite solar cells
Wang et al. Fabrication of efficient metal halide perovskite solar cells by vacuum thermal evaporation: A progress review
Sun et al. Scalable solution‐processed hybrid electron transport layers for efficient all‐perovskite tandem solar modules
Rand et al. Solar cells utilizing small molecular weight organic semiconductors
DK2398056T3 (en) Organic solar cell with multiple transportlagsystemer
Xu et al. Crosslinked remote-doped hole-extracting contacts enhance stability under accelerated lifetime testing in perovskite solar cells
JP6310014B2 (ja) 有機層を含む光活性部品
AU2004221377B2 (en) Photoactive component comprising organic layers
DK2513995T3 (en) PHOTOACTIVE COMPONENT WITH ORGANIC LAYERS
Nazeeruddin et al. Methylammonium lead triiodide perovskite solar cells: A new paradigm in photovoltaics
US10263186B2 (en) Bulk heterojunction organic photovoltaic cells made by glancing angle deposition
EP2678890A1 (en) Organic photovoltaic cell incorporating electron conducting exciton blocking layers
US20120266960A1 (en) Multi layer organic thin film solar cell
JP2015523741A (ja) 電極バッファー層を有する有機光電子デバイスおよびその製造方法
JP6449766B2 (ja) 光電子デバイス用透明電極
KR20100046248A (ko) 질서화된 결정질 유기 막의 성장 방법
Ryan curves were recorded using a 150 W solar simulator (Abet Technologies) at 1 sun conditions (AM 1.5, 100 mW/cm2). Incident to photon current efficiency (IPCE) studies were carried out using a home-built system utilising a 150 W Oriel Xenon lamp as the light source.
Liu Doping and Roll-To-Roll Processing of Organic Solar Cells
久保雅之 et al. pn-Homojunction Organic Solar Cells
Kubo pn-Homojunction Organic Solar Cells
HK1172448A (en) Bulk heterojunction organic photovoltaic cells made by glancing angle deposition

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130516

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130516

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131211

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140121

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140418

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140425

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140519

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140903