DE102009051142B4 - Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung - Google Patents

Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung Download PDF

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Publication number
DE102009051142B4
DE102009051142B4 DE102009051142.3A DE102009051142A DE102009051142B4 DE 102009051142 B4 DE102009051142 B4 DE 102009051142B4 DE 102009051142 A DE102009051142 A DE 102009051142A DE 102009051142 B4 DE102009051142 B4 DE 102009051142B4
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DE
Germany
Prior art keywords
layer
photoactive
photoactive component
component according
substrate
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DE102009051142.3A
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German (de)
English (en)
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DE102009051142A1 (de
Inventor
Dr. Männig Bert
Dr. Uhrich Christian
Dr. Walzer Karsten
Dr. Pfeiffer Martin
David Wynands
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Heliatek GmbH
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Heliatek GmbH
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Priority to DE102009051142.3A priority Critical patent/DE102009051142B4/de
Application filed by Heliatek GmbH filed Critical Heliatek GmbH
Priority to US13/375,597 priority patent/US20120125419A1/en
Priority to JP2012513638A priority patent/JP2012529169A/ja
Priority to KR1020127000392A priority patent/KR20120034718A/ko
Priority to ES10725079T priority patent/ES2879526T3/es
Priority to CN2010800248030A priority patent/CN102460761A/zh
Priority to PCT/EP2010/057889 priority patent/WO2010139803A1/de
Priority to EP10725079.7A priority patent/EP2438633B1/de
Publication of DE102009051142A1 publication Critical patent/DE102009051142A1/de
Application granted granted Critical
Publication of DE102009051142B4 publication Critical patent/DE102009051142B4/de
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • H10K30/57Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211Fullerenes, e.g. C60
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/655Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE102009051142.3A 2009-06-05 2009-10-29 Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung Active DE102009051142B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102009051142.3A DE102009051142B4 (de) 2009-06-05 2009-10-29 Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung
JP2012513638A JP2012529169A (ja) 2009-06-05 2010-06-07 逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法
KR1020127000392A KR20120034718A (ko) 2009-06-05 2010-06-07 반전 층 시퀀스를 포함하는 광활성 컴포넌트, 및 상기 컴포넌트의 생성 방법
ES10725079T ES2879526T3 (es) 2009-06-05 2010-06-07 Componente fotoactivo con orden de capas invertido y procedimiento para su producción
US13/375,597 US20120125419A1 (en) 2009-06-05 2010-06-07 Photoactive component comprising an inverted layer sequence, and method for the production of said component
CN2010800248030A CN102460761A (zh) 2009-06-05 2010-06-07 包含倒置的层顺序的光活性元件以及制备所述元件的方法
PCT/EP2010/057889 WO2010139803A1 (de) 2009-06-05 2010-06-07 Photoaktives bauelement mit invertierter schichtfolge und verfahren zu seiner herstellung
EP10725079.7A EP2438633B1 (de) 2009-06-05 2010-06-07 Photoaktives bauelement mit invertierter schichtfolge und verfahren zu seiner herstellung

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009024294.5 2009-06-05
DE102009024294 2009-06-05
DE102009051142.3A DE102009051142B4 (de) 2009-06-05 2009-10-29 Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
DE102009051142A1 DE102009051142A1 (de) 2010-12-09
DE102009051142B4 true DE102009051142B4 (de) 2019-06-27

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DE102009051142.3A Active DE102009051142B4 (de) 2009-06-05 2009-10-29 Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung

Country Status (8)

Country Link
US (1) US20120125419A1 (enExample)
EP (1) EP2438633B1 (enExample)
JP (1) JP2012529169A (enExample)
KR (1) KR20120034718A (enExample)
CN (1) CN102460761A (enExample)
DE (1) DE102009051142B4 (enExample)
ES (1) ES2879526T3 (enExample)
WO (1) WO2010139803A1 (enExample)

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DE102012105812A1 (de) * 2012-07-02 2014-01-02 Heliatek Gmbh Elektrodenanordnung für optoelektronische Bauelemente
DE102012106607B4 (de) 2012-07-20 2024-04-04 Heliatek Gmbh Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen
US9660207B2 (en) 2012-07-25 2017-05-23 Samsung Electronics Co., Ltd. Organic solar cell
DE102012106815A1 (de) 2012-07-26 2014-01-30 Heliatek Gmbh Verfahren zur Kontaktierung optoelektronischer Bauelemente
US9691163B2 (en) 2013-01-07 2017-06-27 Wexenergy Innovations Llc System and method of measuring distances related to an object utilizing ancillary objects
US9230339B2 (en) 2013-01-07 2016-01-05 Wexenergy Innovations Llc System and method of measuring distances related to an object
US9845636B2 (en) 2013-01-07 2017-12-19 WexEnergy LLC Frameless supplemental window for fenestration
US10196850B2 (en) 2013-01-07 2019-02-05 WexEnergy LLC Frameless supplemental window for fenestration
US8923650B2 (en) 2013-01-07 2014-12-30 Wexenergy Innovations Llc System and method of measuring distances related to an object
US10883303B2 (en) 2013-01-07 2021-01-05 WexEnergy LLC Frameless supplemental window for fenestration
KR101590574B1 (ko) 2013-07-31 2016-02-01 주식회사 엘지화학 벌크이종접합 표면 물성의 조절 방법 및 이를 이용한 다층 구조 태양전지
DE102013111164B4 (de) 2013-10-09 2024-10-24 Heliatek Gmbh Verfahren zur Herstellung von Kontaktlöchern
WO2016045668A1 (de) 2014-09-26 2016-03-31 Heliatek Gmbh Verfahren zum aufbringen einer schutzschicht, schutzschicht selbst und halbfabrikat mit einer schutzschicht
JP2016106437A (ja) * 2016-03-17 2016-06-16 株式会社半導体エネルギー研究所 光電変換装置
KR20180081646A (ko) * 2017-01-06 2018-07-17 삼성디스플레이 주식회사 유기 발광 소자
AU2018278119B2 (en) 2017-05-30 2023-04-27 WexEnergy LLC Frameless supplemental window for fenestration
CN110854269B (zh) * 2019-10-29 2021-09-28 北京大学 一种小分子有机太阳能电池器件及其制备方法

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EP0000829A1 (en) 1977-08-02 1979-02-21 EASTMAN KODAK COMPANY (a New Jersey corporation) Photovoltaic elements
US5093698A (en) 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
US6559375B1 (en) 1998-11-27 2003-05-06 Dieter Meissner Organic solar cell or light-emitting diode
WO2004083958A2 (de) 2003-03-19 2004-09-30 Technische Universität Dresden Photoaktives bauelement mit organischen schichten
DE10338406A1 (de) 2003-08-18 2005-03-24 Novaled Gmbh Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung
US20050110005A1 (en) 2003-11-26 2005-05-26 Forrest Stephen R. Bipolar organic devices
DE10347856A1 (de) 2003-10-10 2005-06-02 Technische Universität Dresden Halbleiterdotierung
DE10357044A1 (de) 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
DE102004010954A1 (de) 2004-03-03 2005-10-06 Novaled Gmbh Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
WO2006092134A1 (de) 2005-03-04 2006-09-08 Heliatek Gmbh Organisches photoaktives bauelement
DE102005010979A1 (de) 2005-03-04 2006-09-21 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
DE102006053320A1 (de) 2006-11-13 2008-05-15 Novaled Ag Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter
DE102006054524A1 (de) 2006-11-20 2008-05-29 Novaled Ag Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand
WO2009013282A1 (de) 2007-07-23 2009-01-29 Basf Se Photovoltaische tandem-zelle
DE102008051737A1 (de) 2007-10-24 2009-05-07 Novaled Ag Quadratisch planare Übergangsmetallkomplexe und diese verwendende organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente
WO2009056626A1 (en) 2007-10-31 2009-05-07 Basf Se Use of halogenated phthalocyanines

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US5769963A (en) * 1995-08-31 1998-06-23 Canon Kabushiki Kaisha Photovoltaic device
JP2010514174A (ja) * 2006-12-22 2010-04-30 ノヴァレッド・アクチエンゲゼルシャフト 少なくとも1つの有機層配列を有する電子素子

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000829A1 (en) 1977-08-02 1979-02-21 EASTMAN KODAK COMPANY (a New Jersey corporation) Photovoltaic elements
US5093698A (en) 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
US6559375B1 (en) 1998-11-27 2003-05-06 Dieter Meissner Organic solar cell or light-emitting diode
WO2004083958A2 (de) 2003-03-19 2004-09-30 Technische Universität Dresden Photoaktives bauelement mit organischen schichten
DE102004014046A1 (de) 2003-03-19 2004-09-30 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
DE10338406A1 (de) 2003-08-18 2005-03-24 Novaled Gmbh Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung
DE10347856A1 (de) 2003-10-10 2005-06-02 Technische Universität Dresden Halbleiterdotierung
US20050110005A1 (en) 2003-11-26 2005-05-26 Forrest Stephen R. Bipolar organic devices
DE10357044A1 (de) 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
DE102004010954A1 (de) 2004-03-03 2005-10-06 Novaled Gmbh Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
WO2006092134A1 (de) 2005-03-04 2006-09-08 Heliatek Gmbh Organisches photoaktives bauelement
DE102005010979A1 (de) 2005-03-04 2006-09-21 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
DE102006053320A1 (de) 2006-11-13 2008-05-15 Novaled Ag Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter
DE102006054524A1 (de) 2006-11-20 2008-05-29 Novaled Ag Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand
WO2009013282A1 (de) 2007-07-23 2009-01-29 Basf Se Photovoltaische tandem-zelle
DE102008051737A1 (de) 2007-10-24 2009-05-07 Novaled Ag Quadratisch planare Übergangsmetallkomplexe und diese verwendende organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente
WO2009056626A1 (en) 2007-10-31 2009-05-07 Basf Se Use of halogenated phthalocyanines

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Also Published As

Publication number Publication date
ES2879526T3 (es) 2021-11-22
JP2012529169A (ja) 2012-11-15
DE102009051142A1 (de) 2010-12-09
KR20120034718A (ko) 2012-04-12
CN102460761A (zh) 2012-05-16
WO2010139803A1 (de) 2010-12-09
US20120125419A1 (en) 2012-05-24
EP2438633B1 (de) 2021-05-26
EP2438633A1 (de) 2012-04-11

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