DE102009051142B4 - Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung - Google Patents
Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung Download PDFInfo
- Publication number
- DE102009051142B4 DE102009051142B4 DE102009051142.3A DE102009051142A DE102009051142B4 DE 102009051142 B4 DE102009051142 B4 DE 102009051142B4 DE 102009051142 A DE102009051142 A DE 102009051142A DE 102009051142 B4 DE102009051142 B4 DE 102009051142B4
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- Germany
- Prior art keywords
- layer
- photoactive
- photoactive component
- component according
- substrate
- Prior art date
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009051142.3A DE102009051142B4 (de) | 2009-06-05 | 2009-10-29 | Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung |
| JP2012513638A JP2012529169A (ja) | 2009-06-05 | 2010-06-07 | 逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法 |
| KR1020127000392A KR20120034718A (ko) | 2009-06-05 | 2010-06-07 | 반전 층 시퀀스를 포함하는 광활성 컴포넌트, 및 상기 컴포넌트의 생성 방법 |
| ES10725079T ES2879526T3 (es) | 2009-06-05 | 2010-06-07 | Componente fotoactivo con orden de capas invertido y procedimiento para su producción |
| US13/375,597 US20120125419A1 (en) | 2009-06-05 | 2010-06-07 | Photoactive component comprising an inverted layer sequence, and method for the production of said component |
| CN2010800248030A CN102460761A (zh) | 2009-06-05 | 2010-06-07 | 包含倒置的层顺序的光活性元件以及制备所述元件的方法 |
| PCT/EP2010/057889 WO2010139803A1 (de) | 2009-06-05 | 2010-06-07 | Photoaktives bauelement mit invertierter schichtfolge und verfahren zu seiner herstellung |
| EP10725079.7A EP2438633B1 (de) | 2009-06-05 | 2010-06-07 | Photoaktives bauelement mit invertierter schichtfolge und verfahren zu seiner herstellung |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009024294.5 | 2009-06-05 | ||
| DE102009024294 | 2009-06-05 | ||
| DE102009051142.3A DE102009051142B4 (de) | 2009-06-05 | 2009-10-29 | Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102009051142A1 DE102009051142A1 (de) | 2010-12-09 |
| DE102009051142B4 true DE102009051142B4 (de) | 2019-06-27 |
Family
ID=43049417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102009051142.3A Active DE102009051142B4 (de) | 2009-06-05 | 2009-10-29 | Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20120125419A1 (enExample) |
| EP (1) | EP2438633B1 (enExample) |
| JP (1) | JP2012529169A (enExample) |
| KR (1) | KR20120034718A (enExample) |
| CN (1) | CN102460761A (enExample) |
| DE (1) | DE102009051142B4 (enExample) |
| ES (1) | ES2879526T3 (enExample) |
| WO (1) | WO2010139803A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012105812A1 (de) * | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Elektrodenanordnung für optoelektronische Bauelemente |
| DE102012106607B4 (de) | 2012-07-20 | 2024-04-04 | Heliatek Gmbh | Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen |
| US9660207B2 (en) | 2012-07-25 | 2017-05-23 | Samsung Electronics Co., Ltd. | Organic solar cell |
| DE102012106815A1 (de) | 2012-07-26 | 2014-01-30 | Heliatek Gmbh | Verfahren zur Kontaktierung optoelektronischer Bauelemente |
| US9691163B2 (en) | 2013-01-07 | 2017-06-27 | Wexenergy Innovations Llc | System and method of measuring distances related to an object utilizing ancillary objects |
| US9230339B2 (en) | 2013-01-07 | 2016-01-05 | Wexenergy Innovations Llc | System and method of measuring distances related to an object |
| US9845636B2 (en) | 2013-01-07 | 2017-12-19 | WexEnergy LLC | Frameless supplemental window for fenestration |
| US10196850B2 (en) | 2013-01-07 | 2019-02-05 | WexEnergy LLC | Frameless supplemental window for fenestration |
| US8923650B2 (en) | 2013-01-07 | 2014-12-30 | Wexenergy Innovations Llc | System and method of measuring distances related to an object |
| US10883303B2 (en) | 2013-01-07 | 2021-01-05 | WexEnergy LLC | Frameless supplemental window for fenestration |
| KR101590574B1 (ko) | 2013-07-31 | 2016-02-01 | 주식회사 엘지화학 | 벌크이종접합 표면 물성의 조절 방법 및 이를 이용한 다층 구조 태양전지 |
| DE102013111164B4 (de) | 2013-10-09 | 2024-10-24 | Heliatek Gmbh | Verfahren zur Herstellung von Kontaktlöchern |
| WO2016045668A1 (de) | 2014-09-26 | 2016-03-31 | Heliatek Gmbh | Verfahren zum aufbringen einer schutzschicht, schutzschicht selbst und halbfabrikat mit einer schutzschicht |
| JP2016106437A (ja) * | 2016-03-17 | 2016-06-16 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
| KR20180081646A (ko) * | 2017-01-06 | 2018-07-17 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
| AU2018278119B2 (en) | 2017-05-30 | 2023-04-27 | WexEnergy LLC | Frameless supplemental window for fenestration |
| CN110854269B (zh) * | 2019-10-29 | 2021-09-28 | 北京大学 | 一种小分子有机太阳能电池器件及其制备方法 |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0000829A1 (en) | 1977-08-02 | 1979-02-21 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Photovoltaic elements |
| US5093698A (en) | 1991-02-12 | 1992-03-03 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
| US6559375B1 (en) | 1998-11-27 | 2003-05-06 | Dieter Meissner | Organic solar cell or light-emitting diode |
| WO2004083958A2 (de) | 2003-03-19 | 2004-09-30 | Technische Universität Dresden | Photoaktives bauelement mit organischen schichten |
| DE10338406A1 (de) | 2003-08-18 | 2005-03-24 | Novaled Gmbh | Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung |
| US20050110005A1 (en) | 2003-11-26 | 2005-05-26 | Forrest Stephen R. | Bipolar organic devices |
| DE10347856A1 (de) | 2003-10-10 | 2005-06-02 | Technische Universität Dresden | Halbleiterdotierung |
| DE10357044A1 (de) | 2003-12-04 | 2005-07-14 | Novaled Gmbh | Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten |
| DE102004010954A1 (de) | 2004-03-03 | 2005-10-06 | Novaled Gmbh | Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
| WO2006092134A1 (de) | 2005-03-04 | 2006-09-08 | Heliatek Gmbh | Organisches photoaktives bauelement |
| DE102005010979A1 (de) | 2005-03-04 | 2006-09-21 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
| DE102006053320A1 (de) | 2006-11-13 | 2008-05-15 | Novaled Ag | Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter |
| DE102006054524A1 (de) | 2006-11-20 | 2008-05-29 | Novaled Ag | Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand |
| WO2009013282A1 (de) | 2007-07-23 | 2009-01-29 | Basf Se | Photovoltaische tandem-zelle |
| DE102008051737A1 (de) | 2007-10-24 | 2009-05-07 | Novaled Ag | Quadratisch planare Übergangsmetallkomplexe und diese verwendende organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente |
| WO2009056626A1 (en) | 2007-10-31 | 2009-05-07 | Basf Se | Use of halogenated phthalocyanines |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5769963A (en) * | 1995-08-31 | 1998-06-23 | Canon Kabushiki Kaisha | Photovoltaic device |
| JP2010514174A (ja) * | 2006-12-22 | 2010-04-30 | ノヴァレッド・アクチエンゲゼルシャフト | 少なくとも1つの有機層配列を有する電子素子 |
-
2009
- 2009-10-29 DE DE102009051142.3A patent/DE102009051142B4/de active Active
-
2010
- 2010-06-07 CN CN2010800248030A patent/CN102460761A/zh active Pending
- 2010-06-07 US US13/375,597 patent/US20120125419A1/en not_active Abandoned
- 2010-06-07 JP JP2012513638A patent/JP2012529169A/ja active Pending
- 2010-06-07 EP EP10725079.7A patent/EP2438633B1/de active Active
- 2010-06-07 KR KR1020127000392A patent/KR20120034718A/ko not_active Withdrawn
- 2010-06-07 ES ES10725079T patent/ES2879526T3/es active Active
- 2010-06-07 WO PCT/EP2010/057889 patent/WO2010139803A1/de not_active Ceased
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0000829A1 (en) | 1977-08-02 | 1979-02-21 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Photovoltaic elements |
| US5093698A (en) | 1991-02-12 | 1992-03-03 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
| US6559375B1 (en) | 1998-11-27 | 2003-05-06 | Dieter Meissner | Organic solar cell or light-emitting diode |
| WO2004083958A2 (de) | 2003-03-19 | 2004-09-30 | Technische Universität Dresden | Photoaktives bauelement mit organischen schichten |
| DE102004014046A1 (de) | 2003-03-19 | 2004-09-30 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
| DE10338406A1 (de) | 2003-08-18 | 2005-03-24 | Novaled Gmbh | Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung |
| DE10347856A1 (de) | 2003-10-10 | 2005-06-02 | Technische Universität Dresden | Halbleiterdotierung |
| US20050110005A1 (en) | 2003-11-26 | 2005-05-26 | Forrest Stephen R. | Bipolar organic devices |
| DE10357044A1 (de) | 2003-12-04 | 2005-07-14 | Novaled Gmbh | Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten |
| DE102004010954A1 (de) | 2004-03-03 | 2005-10-06 | Novaled Gmbh | Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
| WO2006092134A1 (de) | 2005-03-04 | 2006-09-08 | Heliatek Gmbh | Organisches photoaktives bauelement |
| DE102005010979A1 (de) | 2005-03-04 | 2006-09-21 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
| DE102006053320A1 (de) | 2006-11-13 | 2008-05-15 | Novaled Ag | Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter |
| DE102006054524A1 (de) | 2006-11-20 | 2008-05-29 | Novaled Ag | Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand |
| WO2009013282A1 (de) | 2007-07-23 | 2009-01-29 | Basf Se | Photovoltaische tandem-zelle |
| DE102008051737A1 (de) | 2007-10-24 | 2009-05-07 | Novaled Ag | Quadratisch planare Übergangsmetallkomplexe und diese verwendende organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente |
| WO2009056626A1 (en) | 2007-10-31 | 2009-05-07 | Basf Se | Use of halogenated phthalocyanines |
Non-Patent Citations (8)
| Title |
|---|
| C. W. Tang et al.: Appl. Phys. Lett. 48, 183 (1986) |
| Drechsel, Org. Electron., 5, 175 (2004) |
| Hiramoto, Appl. Phys. Lett. 58, 1062 (1991 |
| Hiramoto, Appl. Phys. Lett. 58, 1062 (1991) |
| J. Drechsel, Synthet. Metal., 127, 201-205 (2002) |
| M. Hiramoto et al. Mol. Cryst. Liq. Cryst., 2006, 444, pp. 33-40 |
| M. Hiramoto et al., Mol. Cryst. Liq. Cryst., 2006, 444, pp. 33-40 |
| M. Rusu et al., Thin Solid Film, 2008, 516, pp. 7160-7166 |
Also Published As
| Publication number | Publication date |
|---|---|
| ES2879526T3 (es) | 2021-11-22 |
| JP2012529169A (ja) | 2012-11-15 |
| DE102009051142A1 (de) | 2010-12-09 |
| KR20120034718A (ko) | 2012-04-12 |
| CN102460761A (zh) | 2012-05-16 |
| WO2010139803A1 (de) | 2010-12-09 |
| US20120125419A1 (en) | 2012-05-24 |
| EP2438633B1 (de) | 2021-05-26 |
| EP2438633A1 (de) | 2012-04-11 |
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