ES2405745T3 - Procedimiento e instalación de puesta al desnudo de la superficie de un circuito integrado - Google Patents

Procedimiento e instalación de puesta al desnudo de la superficie de un circuito integrado Download PDF

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Publication number
ES2405745T3
ES2405745T3 ES07871849T ES07871849T ES2405745T3 ES 2405745 T3 ES2405745 T3 ES 2405745T3 ES 07871849 T ES07871849 T ES 07871849T ES 07871849 T ES07871849 T ES 07871849T ES 2405745 T3 ES2405745 T3 ES 2405745T3
Authority
ES
Spain
Prior art keywords
plasma
integrated circuit
application
laser radiation
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES07871849T
Other languages
English (en)
Spanish (es)
Inventor
Romain Desplats
Michaël OBEIN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National dEtudes Spatiales CNES
Original Assignee
Centre National dEtudes Spatiales CNES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National dEtudes Spatiales CNES filed Critical Centre National dEtudes Spatiales CNES
Application granted granted Critical
Publication of ES2405745T3 publication Critical patent/ES2405745T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/346—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding
    • B23K26/348—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding in combination with arc heating, e.g. tungsten inert gas [TIG], metal inert gas [MIG] or plasma welding
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
ES07871849T 2006-12-28 2007-12-12 Procedimiento e instalación de puesta al desnudo de la superficie de un circuito integrado Active ES2405745T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0611489 2006-12-28
FR0611489A FR2911003B1 (fr) 2006-12-28 2006-12-28 Procede et installation de mise a nu de la surface d'un circuit integre
PCT/FR2007/002056 WO2008090281A1 (fr) 2006-12-28 2007-12-12 Procede et installation de mise a nu de la surface d'un circuit integre

Publications (1)

Publication Number Publication Date
ES2405745T3 true ES2405745T3 (es) 2013-06-03

Family

ID=38222717

Family Applications (1)

Application Number Title Priority Date Filing Date
ES07871849T Active ES2405745T3 (es) 2006-12-28 2007-12-12 Procedimiento e instalación de puesta al desnudo de la superficie de un circuito integrado

Country Status (10)

Country Link
US (1) US8555728B2 (https=)
EP (1) EP2095410B1 (https=)
JP (1) JP2010515251A (https=)
KR (1) KR101348971B1 (https=)
CN (1) CN101611482B (https=)
ES (1) ES2405745T3 (https=)
FR (1) FR2911003B1 (https=)
MY (1) MY156014A (https=)
RU (1) RU2450386C2 (https=)
WO (1) WO2008090281A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
US8796151B2 (en) * 2012-04-04 2014-08-05 Ultratech, Inc. Systems for and methods of laser-enhanced plasma processing of semiconductor materials
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
RU2572290C1 (ru) * 2014-12-01 2016-01-10 Открытое акционерное общество "Объединенная ракетно-космическая корпорация" (ОАО "ОРКК") Способ декорпусирования интегральных микросхем
KR102065012B1 (ko) * 2016-07-26 2020-01-10 에이피시스템 주식회사 레이저 처리장치 및 레이저 처리방법
WO2020036971A1 (en) * 2018-08-14 2020-02-20 The Board Of Trustees Of The Universtiy Of Illinois Photoresist-free photolithography, photoprocessing tools, and methods with vuv or deep-uv lamps
CN111495880A (zh) * 2020-04-01 2020-08-07 武汉大学 Movcd中的激光等离子复合清洗装置
GB2612360B (en) * 2021-11-01 2025-04-30 Aquasium Tech Limited Laser welding apparatus
KR102774890B1 (ko) * 2021-12-28 2025-03-04 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN116013817B (zh) * 2023-01-17 2024-03-19 上海季丰电子股份有限公司 芯片封装破除装置及方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0129603A4 (en) * 1982-12-17 1985-06-10 Inoue Japax Res CUTTING DEVICE WITH LASER.
US4611919A (en) * 1984-03-09 1986-09-16 Tegal Corporation Process monitor and method thereof
US4714516A (en) * 1986-09-26 1987-12-22 General Electric Company Method to produce via holes in polymer dielectrics for multiple electronic circuit chip packaging
JPH01179153A (ja) * 1988-01-08 1989-07-17 Seiko Instr & Electron Ltd フォーカスイオンビーム加工装置
JP2854963B2 (ja) * 1990-11-28 1999-02-10 株式会社日立製作所 固相接合方法および装置
JP4513973B2 (ja) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 半導体装置の製造方法
US6071009A (en) * 1997-10-03 2000-06-06 Micron Technology, Inc. Semiconductor wirebond machine leadframe thermal map system
JP2001049014A (ja) 1999-08-10 2001-02-20 Sharp Corp 有機高分子膜の加工方法およびそれを用いて加工された構造体
JP2002110613A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Works Ltd プラズマ洗浄装置及びプラズマ洗浄方法
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
JP2002222835A (ja) * 2001-01-25 2002-08-09 Nec Corp 銅張り樹脂基板の加工方法
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
WO2004020686A2 (en) * 2002-08-28 2004-03-11 Moxtronics, Inc. A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
US20040150096A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
JP2004273771A (ja) * 2003-03-10 2004-09-30 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
RU2272335C2 (ru) * 2003-11-14 2006-03-20 Юрий Дмитриевич Сасов Способ испытаний и контроля электронных компонентов
US20050221586A1 (en) 2003-12-18 2005-10-06 Mulligan Rose A Methods and apparatus for laser dicing
US20060257074A1 (en) * 2004-09-21 2006-11-16 The Furukawa Electric Co., Ltd. Semiconductor device, display device and device fabricating method

Also Published As

Publication number Publication date
JP2010515251A (ja) 2010-05-06
FR2911003A1 (fr) 2008-07-04
US20100154558A1 (en) 2010-06-24
RU2009128992A (ru) 2011-02-10
RU2450386C2 (ru) 2012-05-10
MY156014A (en) 2015-12-31
CN101611482A (zh) 2009-12-23
FR2911003B1 (fr) 2009-10-02
US8555728B2 (en) 2013-10-15
KR20090106549A (ko) 2009-10-09
CN101611482B (zh) 2012-07-25
EP2095410B1 (fr) 2013-04-10
KR101348971B1 (ko) 2014-01-10
WO2008090281A1 (fr) 2008-07-31
EP2095410A1 (fr) 2009-09-02

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