CN101611482B - 用于使集成电路表面暴露的方法和设备 - Google Patents

用于使集成电路表面暴露的方法和设备 Download PDF

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Publication number
CN101611482B
CN101611482B CN200780050958XA CN200780050958A CN101611482B CN 101611482 B CN101611482 B CN 101611482B CN 200780050958X A CN200780050958X A CN 200780050958XA CN 200780050958 A CN200780050958 A CN 200780050958A CN 101611482 B CN101611482 B CN 101611482B
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CN
China
Prior art keywords
integrated circuit
plasma
applying
circuit
laser radiation
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Expired - Fee Related
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CN200780050958XA
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English (en)
Chinese (zh)
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CN101611482A (zh
Inventor
R·德斯朴拉特斯
M·欧贝因
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Centre National dEtudes Spatiales CNES
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Centre National dEtudes Spatiales CNES
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Publication of CN101611482A publication Critical patent/CN101611482A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/346—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding
    • B23K26/348—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding in combination with arc heating, e.g. tungsten inert gas [TIG], metal inert gas [MIG] or plasma welding
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
CN200780050958XA 2006-12-28 2007-12-12 用于使集成电路表面暴露的方法和设备 Expired - Fee Related CN101611482B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0611489 2006-12-28
FR0611489A FR2911003B1 (fr) 2006-12-28 2006-12-28 Procede et installation de mise a nu de la surface d'un circuit integre
PCT/FR2007/002056 WO2008090281A1 (fr) 2006-12-28 2007-12-12 Procede et installation de mise a nu de la surface d'un circuit integre

Publications (2)

Publication Number Publication Date
CN101611482A CN101611482A (zh) 2009-12-23
CN101611482B true CN101611482B (zh) 2012-07-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200780050958XA Expired - Fee Related CN101611482B (zh) 2006-12-28 2007-12-12 用于使集成电路表面暴露的方法和设备

Country Status (10)

Country Link
US (1) US8555728B2 (https=)
EP (1) EP2095410B1 (https=)
JP (1) JP2010515251A (https=)
KR (1) KR101348971B1 (https=)
CN (1) CN101611482B (https=)
ES (1) ES2405745T3 (https=)
FR (1) FR2911003B1 (https=)
MY (1) MY156014A (https=)
RU (1) RU2450386C2 (https=)
WO (1) WO2008090281A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
US8796151B2 (en) * 2012-04-04 2014-08-05 Ultratech, Inc. Systems for and methods of laser-enhanced plasma processing of semiconductor materials
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
RU2572290C1 (ru) * 2014-12-01 2016-01-10 Открытое акционерное общество "Объединенная ракетно-космическая корпорация" (ОАО "ОРКК") Способ декорпусирования интегральных микросхем
KR102065012B1 (ko) * 2016-07-26 2020-01-10 에이피시스템 주식회사 레이저 처리장치 및 레이저 처리방법
WO2020036971A1 (en) * 2018-08-14 2020-02-20 The Board Of Trustees Of The Universtiy Of Illinois Photoresist-free photolithography, photoprocessing tools, and methods with vuv or deep-uv lamps
CN111495880A (zh) * 2020-04-01 2020-08-07 武汉大学 Movcd中的激光等离子复合清洗装置
GB2612360B (en) * 2021-11-01 2025-04-30 Aquasium Tech Limited Laser welding apparatus
KR102774890B1 (ko) * 2021-12-28 2025-03-04 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN116013817B (zh) * 2023-01-17 2024-03-19 上海季丰电子股份有限公司 芯片封装破除装置及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689467A (en) * 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611919A (en) * 1984-03-09 1986-09-16 Tegal Corporation Process monitor and method thereof
US4714516A (en) * 1986-09-26 1987-12-22 General Electric Company Method to produce via holes in polymer dielectrics for multiple electronic circuit chip packaging
JPH01179153A (ja) * 1988-01-08 1989-07-17 Seiko Instr & Electron Ltd フォーカスイオンビーム加工装置
JP2854963B2 (ja) * 1990-11-28 1999-02-10 株式会社日立製作所 固相接合方法および装置
JP4513973B2 (ja) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 半導体装置の製造方法
US6071009A (en) * 1997-10-03 2000-06-06 Micron Technology, Inc. Semiconductor wirebond machine leadframe thermal map system
JP2001049014A (ja) 1999-08-10 2001-02-20 Sharp Corp 有機高分子膜の加工方法およびそれを用いて加工された構造体
JP2002110613A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Works Ltd プラズマ洗浄装置及びプラズマ洗浄方法
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
JP2002222835A (ja) * 2001-01-25 2002-08-09 Nec Corp 銅張り樹脂基板の加工方法
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
WO2004020686A2 (en) * 2002-08-28 2004-03-11 Moxtronics, Inc. A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
US20040150096A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
JP2004273771A (ja) * 2003-03-10 2004-09-30 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
RU2272335C2 (ru) * 2003-11-14 2006-03-20 Юрий Дмитриевич Сасов Способ испытаний и контроля электронных компонентов
US20050221586A1 (en) 2003-12-18 2005-10-06 Mulligan Rose A Methods and apparatus for laser dicing
US20060257074A1 (en) * 2004-09-21 2006-11-16 The Furukawa Electric Co., Ltd. Semiconductor device, display device and device fabricating method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689467A (en) * 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Jeffrey T. Butler.Multichip module packaging of microelectromechanical systems.《Sensors and Actuators A 》.Elsevier Science S.A,1998,第22卷(第15期),16-17. *

Also Published As

Publication number Publication date
JP2010515251A (ja) 2010-05-06
FR2911003A1 (fr) 2008-07-04
US20100154558A1 (en) 2010-06-24
RU2009128992A (ru) 2011-02-10
RU2450386C2 (ru) 2012-05-10
MY156014A (en) 2015-12-31
CN101611482A (zh) 2009-12-23
FR2911003B1 (fr) 2009-10-02
ES2405745T3 (es) 2013-06-03
US8555728B2 (en) 2013-10-15
KR20090106549A (ko) 2009-10-09
EP2095410B1 (fr) 2013-04-10
KR101348971B1 (ko) 2014-01-10
WO2008090281A1 (fr) 2008-07-31
EP2095410A1 (fr) 2009-09-02

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