KR100779153B1 - 어닐링 장치 - Google Patents
어닐링 장치 Download PDFInfo
- Publication number
- KR100779153B1 KR100779153B1 KR1020060108670A KR20060108670A KR100779153B1 KR 100779153 B1 KR100779153 B1 KR 100779153B1 KR 1020060108670 A KR1020060108670 A KR 1020060108670A KR 20060108670 A KR20060108670 A KR 20060108670A KR 100779153 B1 KR100779153 B1 KR 100779153B1
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- chamber
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- transparent window
- gas
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- 238000000137 annealing Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000003068 static effect Effects 0.000 claims abstract description 33
- 230000005611 electricity Effects 0.000 claims abstract description 18
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 16
- 239000002216 antistatic agent Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 38
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000003379 elimination reaction Methods 0.000 description 6
- 230000008030 elimination Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (8)
- 적어도 하나의 투명창을 구비하는 챔버;상기 챔버 내에 배치되며 상호 수직한 X축, Y축으로 이루어진 직교좌표계에서 상기 X축 방향을 따라 왕복이동가능한 X축 스테이지;상기 X축 스테이지 상에 배치되어 상기 Y축 방향을 따라 왕복이동가능한 Y축 스테이지;상기 Y축 스테이지 상에 배치되어 열처리 대상이 되는 기판이 장착되는 로딩 플레이트; 및상기 챔버의 투명창 외측에 밀착되게 배치되어 이 투명창을 통해 상기 챔버의 내부에 연X선을 조사함으로써 공기를 이온화시켜 챔버 내의 정전기를 제거하는 포토 이오나이저;를 구비하는 것을 특징으로 하는 어닐링 장치.
- 제1항에 있어서,상기 챔버에는 상면과 측면에 각각 적어도 하나의 투명창을 구비하며,상기 포토 이오나이저는 상기 투명창의 외측에 각각 밀착배치되는 것을 특징으로 하는 어닐링 장치.
- 제1항에 있어서,상기 로딩 플레이트에는 대전방지재가 코팅되어 있는 것을 특징으로 하는 어 닐링 장치.
- 제1항에 있어서,상기 로딩 플레이트는, 일측에 가스유입홀이 형성된 베이스 플레이트와, 이 베이스 플레이트 상에 얹어져 결합되며 가스가 통과할 수 있도록 다수의 미세 구멍이 형성된 다공성 플레이트를 구비하여,상기 가스유입홀로 유입된 공기는 상기 베이스 플레이트와 다공성 플레이트 사이의 밀폐된 공간과 상기 다수의 미세 구멍을 통해 배출되어 상기 다공성 플레이트 상에 장착된 기판을 부상시키는 것을 특징으로 하는 어닐링 장치.
- 제4항에 있어서,상기 로딩 플레이트의 가스유입홀을 통해 배기가 이루어짐으로써 상기 기판을 다공성 플레이트에 흡착시킬 수 있는 것을 특징으로 하는 어닐링 장치.
- 제4항에 있어서,상기 가스의 유입에 의하여 부상되는 기판의 정렬상태를 유지시키기 위하여, 상기 다공성 플레이트의 둘레방향을 따라 배치되며 상기 다공성 플레이트의 상면에 대하여 돌출되도록 상기 로딩 플레이트에 결합되는 복수의 가이드 핀을 더 구비하는 것을 특징으로 하는 어닐링 장치.
- 제4항에 있어서,상기 가스유입홀로 유입되는 가스는 불활성 가스인 것을 특징으로 하는 어닐링 장치.
- 제4항에 있어서,상기 다공성 플레이트에는 대전방지재가 코팅되어 있는 것을 특징으로 하는 어닐링 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060108670A KR100779153B1 (ko) | 2006-11-06 | 2006-11-06 | 어닐링 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060108670A KR100779153B1 (ko) | 2006-11-06 | 2006-11-06 | 어닐링 장치 |
Publications (1)
Publication Number | Publication Date |
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KR100779153B1 true KR100779153B1 (ko) | 2007-11-23 |
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Family Applications (1)
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KR1020060108670A KR100779153B1 (ko) | 2006-11-06 | 2006-11-06 | 어닐링 장치 |
Country Status (1)
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KR (1) | KR100779153B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101370879B1 (ko) * | 2012-12-21 | 2014-03-07 | 주식회사 나래나노텍 | 기판 열처리 챔버용 견시창, 및 이를 구비한 기판 열처리 챔버, 장치 및 방법 |
CN103801821A (zh) * | 2012-11-13 | 2014-05-21 | Ap系统股份有限公司 | 透光设备及具有所述透光设备的退火设备 |
WO2023150161A1 (en) * | 2022-02-07 | 2023-08-10 | Applied Materials, Inc. | Chamber ionizer for reducing electrostatic discharge |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07312337A (ja) * | 1994-05-18 | 1995-11-28 | Dainippon Screen Mfg Co Ltd | 基板加熱処理装置 |
JPH082944A (ja) * | 1994-06-15 | 1996-01-09 | Mitsubishi Electric Corp | 液晶表示素子の製造装置 |
KR19980080626A (ko) * | 1997-03-25 | 1998-11-25 | 히가시테쯔로우 | 처리장치 및 처리방법 |
-
2006
- 2006-11-06 KR KR1020060108670A patent/KR100779153B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07312337A (ja) * | 1994-05-18 | 1995-11-28 | Dainippon Screen Mfg Co Ltd | 基板加熱処理装置 |
JPH082944A (ja) * | 1994-06-15 | 1996-01-09 | Mitsubishi Electric Corp | 液晶表示素子の製造装置 |
KR19980080626A (ko) * | 1997-03-25 | 1998-11-25 | 히가시테쯔로우 | 처리장치 및 처리방법 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103801821A (zh) * | 2012-11-13 | 2014-05-21 | Ap系统股份有限公司 | 透光设备及具有所述透光设备的退火设备 |
KR101432153B1 (ko) * | 2012-11-13 | 2014-08-22 | 삼성디스플레이 주식회사 | 광 투과 장치 및 이를 구비하는 어닐링 장치 |
CN103801821B (zh) * | 2012-11-13 | 2016-08-17 | Ap系统股份有限公司 | 透光设备及具有所述透光设备的退火设备 |
KR101370879B1 (ko) * | 2012-12-21 | 2014-03-07 | 주식회사 나래나노텍 | 기판 열처리 챔버용 견시창, 및 이를 구비한 기판 열처리 챔버, 장치 및 방법 |
WO2023150161A1 (en) * | 2022-02-07 | 2023-08-10 | Applied Materials, Inc. | Chamber ionizer for reducing electrostatic discharge |
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