ATE484009T1 - Maskenkorrektur durch elektronenstrahlinduzierte chemische ätzung - Google Patents

Maskenkorrektur durch elektronenstrahlinduzierte chemische ätzung

Info

Publication number
ATE484009T1
ATE484009T1 AT02737584T AT02737584T ATE484009T1 AT E484009 T1 ATE484009 T1 AT E484009T1 AT 02737584 T AT02737584 T AT 02737584T AT 02737584 T AT02737584 T AT 02737584T AT E484009 T1 ATE484009 T1 AT E484009T1
Authority
AT
Austria
Prior art keywords
electron beam
chemical etching
beam induced
induced chemical
mask correction
Prior art date
Application number
AT02737584T
Other languages
English (en)
Inventor
Shoudeng Liang
Alan Stivers
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE484009T1 publication Critical patent/ATE484009T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Heat Treatment Of Sheet Steel (AREA)
AT02737584T 2001-06-29 2002-06-21 Maskenkorrektur durch elektronenstrahlinduzierte chemische ätzung ATE484009T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/895,511 US20030000921A1 (en) 2001-06-29 2001-06-29 Mask repair with electron beam-induced chemical etching
PCT/US2002/020016 WO2003003118A2 (en) 2001-06-29 2002-06-21 Mask repair with electron beam-induced chemical etching

Publications (1)

Publication Number Publication Date
ATE484009T1 true ATE484009T1 (de) 2010-10-15

Family

ID=25404613

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02737584T ATE484009T1 (de) 2001-06-29 2002-06-21 Maskenkorrektur durch elektronenstrahlinduzierte chemische ätzung

Country Status (8)

Country Link
US (2) US20030000921A1 (de)
EP (1) EP1402316B1 (de)
CN (1) CN1639638B (de)
AT (1) ATE484009T1 (de)
DE (1) DE60237886D1 (de)
MY (1) MY156007A (de)
TW (1) TW559939B (de)
WO (1) WO2003003118A2 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004537758A (ja) 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
US6673520B2 (en) * 2001-08-24 2004-01-06 Motorola, Inc. Method of making an integrated circuit using a reflective mask
US6653053B2 (en) * 2001-08-27 2003-11-25 Motorola, Inc. Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
EP1363164B1 (de) * 2002-05-16 2015-04-29 NaWoTec GmbH Verfahren zum Ätzen einer Oberfläche mittels durch fokussierten Elektronenstrahl hervorgerufenen chemischen Reaktionen auf dieser Oberfläche
US20030228529A1 (en) * 2002-06-10 2003-12-11 Dupont Photomasks, Inc. Photomask and method for repairing defects
ATE497250T1 (de) * 2002-10-16 2011-02-15 Zeiss Carl Sms Gmbh Verfahren für durch einen fokussierten elektronenstrahl induziertes ätzen
US7727681B2 (en) * 2003-01-16 2010-06-01 Fei Company Electron beam processing for mask repair
DE10302794A1 (de) * 2003-01-24 2004-07-29 Nawotec Gmbh Verfahren und Vorrichtung zur Herstellung von Korpuskularstrahlsystemen
DE10338019A1 (de) * 2003-08-19 2005-03-24 Nawotec Gmbh Verfahren zum hochaufgelösten Bearbeiten dünner Schichten mit Elektronenstrahlen
US7786403B2 (en) * 2003-08-28 2010-08-31 Nawo Tec Gmbh Method for high-resolution processing of thin layers using electron beams
US7064048B2 (en) * 2003-10-17 2006-06-20 United Microelectronics Corp. Method of forming a semi-insulating region
DE10353591A1 (de) * 2003-11-17 2005-06-02 Infineon Technologies Ag Verfahren zum lokal begrenzten Ätzen einer Chromschicht
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
JP4931799B2 (ja) * 2004-03-22 2012-05-16 ケーエルエー−テンカー コーポレイション 基板の特徴を測定する、または分析のために基板を準備する方法およびシステム
US7407729B2 (en) * 2004-08-05 2008-08-05 Infineon Technologies Ag EUV magnetic contrast lithography mask and manufacture thereof
US20060042146A1 (en) * 2004-09-01 2006-03-02 Waddy James A Jr Brother's bait bag
GB0424426D0 (en) * 2004-11-04 2004-12-08 Micromass Ltd Mass spectrometer
US20060134920A1 (en) * 2004-12-17 2006-06-22 Ted Liang Passivating metal etch structures
US20060147814A1 (en) * 2005-01-03 2006-07-06 Ted Liang Methods for repairing an alternating phase-shift mask
US7670956B2 (en) 2005-04-08 2010-03-02 Fei Company Beam-induced etching
JP4627682B2 (ja) * 2005-05-27 2011-02-09 株式会社日立ハイテクノロジーズ 試料作製装置および方法
FR2894691B1 (fr) * 2005-12-13 2008-01-18 Commissariat Energie Atomique Procede de fabrication de masque lithographique en reflexion et masque issu du procede
US7833442B2 (en) 2005-12-21 2010-11-16 Essilor International (Compagnie Generale D'optique) Method for coating an ophthalmic lens within an injection molding machine
JP2007249142A (ja) * 2006-03-20 2007-09-27 Sii Nanotechnology Inc 原子間力顕微鏡微細加工装置を用いたクロムマスクの黒欠陥修正方法
US20070278180A1 (en) * 2006-06-01 2007-12-06 Williamson Mark J Electron induced chemical etching for materials characterization
US7791055B2 (en) 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7892978B2 (en) * 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7807062B2 (en) * 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US8076650B2 (en) 2006-07-14 2011-12-13 Fei Company Multi-source plasma focused ion beam system
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7917244B2 (en) * 2007-03-14 2011-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing critical dimension side-to-side tilting error
DE102007028172B3 (de) 2007-06-20 2008-12-11 Advanced Mask Technology Center Gmbh & Co. Kg EUV-Maske und Verfahren zur Reparatur einer EUV-Maske
CN101446758B (zh) * 2007-11-28 2011-05-11 中国科学院微电子研究所 改善微机械非制冷红外成像芯片中反光板平整度的方法
DE102008037951B4 (de) 2008-08-14 2018-02-15 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
US8054558B2 (en) * 2009-02-11 2011-11-08 Omniprobe, Inc. Multiple magnification optical system with single objective lens
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8987678B2 (en) 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
EP2341525B1 (de) 2009-12-30 2013-10-23 FEI Company Plasmaquelle für ein Teilchenstrahlsystem
JP5922125B2 (ja) 2010-08-31 2016-05-24 エフ・イ−・アイ・カンパニー 低質量種と高質量種の両方を含むイオン源を使用した誘導および試料処理
US8211717B1 (en) 2011-01-26 2012-07-03 International Business Machines Corporation SEM repair for sub-optimal features
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP5723801B2 (ja) 2012-02-06 2015-05-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置および配線方法
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US8748063B2 (en) 2012-08-01 2014-06-10 International Business Machines Corporation Extreme ultraviolet (EUV) multilayer defect compensation and EUV masks
US9122175B2 (en) 2012-10-11 2015-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Image mask film scheme and method
US8999610B2 (en) * 2012-12-31 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask repairing process
DE102013203995B4 (de) * 2013-03-08 2020-03-12 Carl Zeiss Smt Gmbh Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl
US9494854B2 (en) * 2013-03-14 2016-11-15 Kla-Tencor Corporation Technique for repairing an EUV photo-mask
JP5630592B1 (ja) * 2013-06-17 2014-11-26 大日本印刷株式会社 フォトマスクの製造方法
CN105453242B (zh) * 2013-08-14 2017-09-22 株式会社日立制作所 半导体检查方法、半导体检查装置以及半导体元件的制造方法
US9934969B2 (en) * 2014-01-31 2018-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Charged-particle-beam patterning without resist
KR102235616B1 (ko) 2014-08-14 2021-04-02 삼성전자주식회사 포토마스크, 포토마스크 제조방법, 및 포토마스크를 이용한 반도체 소자 제조방법
US10145674B2 (en) * 2016-05-02 2018-12-04 Kla-Tencor Corporation Measurement of semiconductor structures with capillary condensation
US10281263B2 (en) * 2016-05-02 2019-05-07 Kla-Tencor Corporation Critical dimension measurements with gaseous adsorption
US10041873B2 (en) 2016-05-02 2018-08-07 Kla-Tencor Corporation Porosity measurement of semiconductor structures
JP6772037B2 (ja) * 2016-11-11 2020-10-21 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
DE102017208114A1 (de) 2017-05-15 2018-05-03 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Teilchenstrahl-induzierten Ätzen einer photolithographischen Maske
DE102019201468A1 (de) * 2019-02-05 2020-08-06 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Reparieren einer fotolithographischen Maske
US11715622B2 (en) * 2020-08-05 2023-08-01 Kla Corporation Material recovery systems for optical components

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423473A (en) * 1977-07-25 1979-02-22 Cho Lsi Gijutsu Kenkyu Kumiai Photomask and method of inspecting mask pattern using same
US4818872A (en) * 1987-05-11 1989-04-04 Microbeam Inc. Integrated charge neutralization and imaging system
JP2569057B2 (ja) * 1987-07-10 1997-01-08 株式会社日立製作所 Ｘ線マスクの欠陥修正方法
DE3803355A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage
US4906326A (en) * 1988-03-25 1990-03-06 Canon Kabushiki Kaisha Mask repair system
DE69306565T2 (de) 1993-07-30 1997-06-12 Ibm Vorrichtung und Verfahren um feine Metal-linie auf einem Substrat abzulegen
US5482802A (en) * 1993-11-24 1996-01-09 At&T Corp. Material removal with focused particle beams
JPH08259386A (ja) * 1995-03-20 1996-10-08 Matsushita Electric Ind Co Ltd 酸化物薄膜の製造方法及びそれに用いる化学蒸着装置
JPH10223512A (ja) * 1997-02-10 1998-08-21 Nikon Corp 電子ビーム投影露光装置
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6420701B1 (en) * 1997-07-23 2002-07-16 Canon Kabushiki Kaisha Method of determining average crystallite size of material and apparatus and method for preparing thin film of the material
US6114073A (en) * 1998-12-28 2000-09-05 Micron Technology, Inc. Method for repairing phase shifting masks
AU5753000A (en) * 1999-06-21 2001-01-09 Procter & Gamble Company, The Detergent composition
JP4442962B2 (ja) * 1999-10-19 2010-03-31 株式会社ルネサステクノロジ フォトマスクの製造方法
US6610447B2 (en) * 2001-03-30 2003-08-26 Intel Corporation Extreme ultraviolet mask with improved absorber
US6548417B2 (en) * 2001-09-19 2003-04-15 Intel Corporation In-situ balancing for phase-shifting mask

Also Published As

Publication number Publication date
MY156007A (en) 2015-12-31
EP1402316B1 (de) 2010-10-06
WO2003003118A2 (en) 2003-01-09
TW559939B (en) 2003-11-01
CN1639638A (zh) 2005-07-13
DE60237886D1 (de) 2010-11-18
CN1639638B (zh) 2010-05-05
US20030000921A1 (en) 2003-01-02
EP1402316A2 (de) 2004-03-31
US20040048398A1 (en) 2004-03-11
US6897157B2 (en) 2005-05-24
WO2003003118A3 (en) 2003-10-09

Similar Documents

Publication Publication Date Title
ATE484009T1 (de) Maskenkorrektur durch elektronenstrahlinduzierte chemische ätzung
US7544959B2 (en) In situ surface contamination removal for ion implanting
JP4943912B2 (ja) 基板から残渣を除去する方法
JP2001267266A (ja) プラズマイマージョンイオン注入処理の方法
EP1710327A3 (de) Verfahren zum selektiven Ätzen durch einen Ionen-, Elektron- oder Laserstrahl
SG131768A1 (en) Lithographic apparatus with debris suppression means and device manufacturing method
TW200604761A (en) Rinse and resist patterning process using the same
JP2009531858A (ja) 基板上の残留物を除去するための後エッチング処理システム
TW200421018A (en) Method and apparatus for recycling gases used in a lithography tool
EP1918775A3 (de) Maskenätzungsverfahren
TWI695237B (zh) 微粒射束設備及操作微粒射束設備的方法
JP2007053405A (ja) 基板吸着装置
EP1308994A3 (de) Verfahren zur Ätzung Kontaktlöchern in einem Organosilikatglass
TW476979B (en) Charged particle beam exposure apparatus and method
TW200305192A (en) Lithographic apparatus and device manufacturing method
TW200843564A (en) Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
WO2002061790A3 (en) Microcathode with integrated extractor
JP4298740B2 (ja) 基板吸着装置
KR20160036911A (ko) 가스 분위기에서 포토레지스트를 레이저 처리하는 방법
JP2003193231A (ja) スパッタ源、スパッタ成膜装置、スパッタ成膜方法、光学多層膜、光学部材及び投影露光装置
JP2007227785A (ja) プラズマ処理装置
EP1187171A2 (de) Behandlungsgerät und -verfahren
EP1329772A3 (de) Lithographischer Projektionsapparat, Verfahren zur Herstellung eines Artikels und dabei hergestellter Artikel
JP2000200745A (ja) 投影露光装置
KR20170069969A (ko) 오존 공급 장치, 오존 공급 방법, 및 하전 입자빔 묘화 시스템

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties