CN101446758B - 改善微机械非制冷红外成像芯片中反光板平整度的方法 - Google Patents
改善微机械非制冷红外成像芯片中反光板平整度的方法 Download PDFInfo
- Publication number
- CN101446758B CN101446758B CN2007101783174A CN200710178317A CN101446758B CN 101446758 B CN101446758 B CN 101446758B CN 2007101783174 A CN2007101783174 A CN 2007101783174A CN 200710178317 A CN200710178317 A CN 200710178317A CN 101446758 B CN101446758 B CN 101446758B
- Authority
- CN
- China
- Prior art keywords
- reflector
- silicon substrate
- chromium
- infrared imaging
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000003331 infrared imaging Methods 0.000 title claims abstract description 28
- 238000005057 refrigeration Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 69
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000010931 gold Substances 0.000 claims abstract description 23
- 229910052737 gold Inorganic materials 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 22
- 230000000873 masking effect Effects 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 33
- 239000011651 chromium Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 15
- 238000000992 sputter etching Methods 0.000 claims description 15
- 238000003384 imaging method Methods 0.000 claims description 12
- 230000002787 reinforcement Effects 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 238000001883 metal evaporation Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 239000003351 stiffener Substances 0.000 abstract 2
- 230000009977 dual effect Effects 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 206010037660 Pyrexia Diseases 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-YPZZEJLDSA-N chromium-50 Chemical compound [50Cr] VYZAMTAEIAYCRO-YPZZEJLDSA-N 0.000 description 1
- PCHJSUWPFVWCPO-AKLPVKDBSA-N gold-200 Chemical compound [200Au] PCHJSUWPFVWCPO-AKLPVKDBSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Images
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007101783174A CN101446758B (zh) | 2007-11-28 | 2007-11-28 | 改善微机械非制冷红外成像芯片中反光板平整度的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007101783174A CN101446758B (zh) | 2007-11-28 | 2007-11-28 | 改善微机械非制冷红外成像芯片中反光板平整度的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101446758A CN101446758A (zh) | 2009-06-03 |
CN101446758B true CN101446758B (zh) | 2011-05-11 |
Family
ID=40742489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101783174A Active CN101446758B (zh) | 2007-11-28 | 2007-11-28 | 改善微机械非制冷红外成像芯片中反光板平整度的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101446758B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101659389B (zh) * | 2009-07-17 | 2011-12-21 | 中国传媒大学 | 光读出红外图像传感器像元芯片的光刻方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5725973A (en) * | 1994-02-07 | 1998-03-10 | Samsung Electronic Co., Ltd. | Photo mask and method for manufacturing same |
JP2002303968A (ja) * | 2001-04-09 | 2002-10-18 | Toshiba Corp | 原版とその作製方法及びその原版を用いた露光方法 |
CN1556648A (zh) * | 2003-12-31 | 2004-12-22 | 中国科学技术大学 | 光-机械式微梁阵列热型红外图象传感器 |
CN1639638A (zh) * | 2001-06-29 | 2005-07-13 | 英特尔公司 | 利用电子束诱导化学刻蚀修复掩模 |
CN1658068A (zh) * | 2003-10-15 | 2005-08-24 | 台湾积体电路制造股份有限公司 | 光刻制程、掩膜版及其制造方法 |
CN1904568A (zh) * | 2005-07-28 | 2007-01-31 | 中国科学院微电子研究所 | 光-机械式双层结构非制冷红外成像焦平面阵列 |
-
2007
- 2007-11-28 CN CN2007101783174A patent/CN101446758B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5725973A (en) * | 1994-02-07 | 1998-03-10 | Samsung Electronic Co., Ltd. | Photo mask and method for manufacturing same |
JP2002303968A (ja) * | 2001-04-09 | 2002-10-18 | Toshiba Corp | 原版とその作製方法及びその原版を用いた露光方法 |
CN1639638A (zh) * | 2001-06-29 | 2005-07-13 | 英特尔公司 | 利用电子束诱导化学刻蚀修复掩模 |
CN1658068A (zh) * | 2003-10-15 | 2005-08-24 | 台湾积体电路制造股份有限公司 | 光刻制程、掩膜版及其制造方法 |
CN1556648A (zh) * | 2003-12-31 | 2004-12-22 | 中国科学技术大学 | 光-机械式微梁阵列热型红外图象传感器 |
CN1904568A (zh) * | 2005-07-28 | 2007-01-31 | 中国科学院微电子研究所 | 光-机械式双层结构非制冷红外成像焦平面阵列 |
Non-Patent Citations (2)
Title |
---|
熊志铭,张青川,陈大鹏,伍小平.光学读出微梁阵列红外成像及性能分析.《物理学报》.2007,第56卷(第5期), * |
高杰,焦斌斌,陈大鹏,董凤良.光学读出红外成像及其FPA性能分析.《红外与激光工程》.2007,第36卷 * |
Also Published As
Publication number | Publication date |
---|---|
CN101446758A (zh) | 2009-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2527890B2 (ja) | マスク、その製造方法及びタ―ゲット基板をレ―ザ処理する方法 | |
TW200521634A (en) | Method and system for immersion lithography | |
JPH05188148A (ja) | 放射線検出素子 | |
CN207662545U (zh) | 法珀传感器 | |
Ceyssens et al. | Creating multi-layered structures with freestanding parts in SU-8 | |
CN101794694A (zh) | 新型tem样品支持膜(氮化硅窗口)的制作工艺 | |
US20170154749A1 (en) | Method for manufacturing radiation window and a radiation window | |
CN101446758B (zh) | 改善微机械非制冷红外成像芯片中反光板平整度的方法 | |
JPS5842003A (ja) | 偏光板 | |
CN100396593C (zh) | 单层双材料微悬臂梁热隔离焦平面阵列的制作方法 | |
US8711484B2 (en) | Fabrication of thin pellicle beam splitters | |
CN101274740A (zh) | 基于二氧化硅特性制作热剪切应力传感器的方法 | |
CN101274739A (zh) | 非接触式微电子机械系统红外温度报警器的制备方法 | |
WO2013011372A1 (en) | Method for separating a layer from a composite structure | |
CN100509610C (zh) | 一种微机电系统振动射流执行器的制备方法 | |
CN102285636B (zh) | 一种多边形截面硅梁的湿法腐蚀制备工艺 | |
CN106185784B (zh) | 基于湿法预释放结构的mems红外光源及其制备方法 | |
CN107543648B (zh) | 基于双f-p腔的高温剪应力传感器及其制备方法 | |
CN101723312A (zh) | 依赖晶面的三维限制硅纳米结构的制备方法 | |
JP2009075265A (ja) | グリッド偏光フィルムの製造方法 | |
CN100349047C (zh) | 硅基液晶铝反射电极的钝化保护方法 | |
CN211471247U (zh) | 一种氮化铝陶瓷复合基板结构 | |
CN100445797C (zh) | 微镜阵列和制造该微镜阵列的方法 | |
Lai et al. | Double‐sided transistor device processability of carrierless ultrathin silicon wafers | |
US20240093345A1 (en) | Fixed point defect doping method for micro-nanostructure, and nv center sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160809 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 building 328 room 15 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161031 Address after: 214028 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee after: ZHONGKE WEIZHI INTELLIGENT MANUFACTURING TECHNOLOGY JIANGSU CO.,LTD. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 building 328 room 15 Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 214028 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee after: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. Address before: 214028 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee before: ZHONGKE WEIZHI INTELLIGENT MANUFACTURING TECHNOLOGY JIANGSU Co.,Ltd. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 214105 No. 299 Dacheng Road, Xishan District, Jiangsu, Wuxi Patentee after: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. Address before: 214028 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee before: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No. 979, Antai Third Road, Xishan District, Wuxi City, Jiangsu Province, 214000 Patentee after: Zhongke Weizhi Technology Co.,Ltd. Address before: No. 299, Dacheng Road, Xishan District, Wuxi City, Jiangsu Province Patentee before: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. |