ES2352314T3 - Dispositivo y procedimiento para atemperar al menos un producto de procesamiento. - Google Patents

Dispositivo y procedimiento para atemperar al menos un producto de procesamiento. Download PDF

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Publication number
ES2352314T3
ES2352314T3 ES00987007T ES00987007T ES2352314T3 ES 2352314 T3 ES2352314 T3 ES 2352314T3 ES 00987007 T ES00987007 T ES 00987007T ES 00987007 T ES00987007 T ES 00987007T ES 2352314 T3 ES2352314 T3 ES 2352314T3
Authority
ES
Spain
Prior art keywords
tempering
gas
layer
space
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES00987007T
Other languages
English (en)
Spanish (es)
Inventor
Volker Probst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Application granted granted Critical
Publication of ES2352314T3 publication Critical patent/ES2352314T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Furnace Details (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
ES00987007T 1999-10-20 2000-10-20 Dispositivo y procedimiento para atemperar al menos un producto de procesamiento. Expired - Lifetime ES2352314T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19950575 1999-10-20
DE19950575 1999-10-20

Publications (1)

Publication Number Publication Date
ES2352314T3 true ES2352314T3 (es) 2011-02-17

Family

ID=7926306

Family Applications (1)

Application Number Title Priority Date Filing Date
ES00987007T Expired - Lifetime ES2352314T3 (es) 1999-10-20 2000-10-20 Dispositivo y procedimiento para atemperar al menos un producto de procesamiento.

Country Status (9)

Country Link
US (1) US6703589B1 (enExample)
EP (1) EP1277237B1 (enExample)
JP (1) JP4488155B2 (enExample)
CN (1) CN1187842C (enExample)
AT (1) ATE481740T1 (enExample)
AU (1) AU769237B2 (enExample)
DE (1) DE50015995D1 (enExample)
ES (1) ES2352314T3 (enExample)
WO (1) WO2001029901A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10359102A1 (de) * 2003-12-17 2005-07-21 Carl Zeiss Smt Ag Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung
JP3986021B2 (ja) * 2003-12-26 2007-10-03 オリジン電気株式会社 基板の処理方法及び装置
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
JP5176364B2 (ja) * 2007-03-29 2013-04-03 日本電気株式会社 光加熱装置及び光加熱方法
DE102008022784A1 (de) 2008-05-08 2009-11-12 Avancis Gmbh & Co. Kg Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer
WO2010060646A1 (de) * 2008-11-28 2010-06-03 Volker Probst Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten
EP2144026B1 (de) * 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
TWI418047B (zh) * 2009-01-07 2013-12-01 財團法人工業技術研究院 Ｉｂ－iiiａ－ｖｉａ2化合物半導體薄膜之製造裝置
DE102010008084A1 (de) 2010-02-15 2011-08-18 Leybold Optics GmbH, 63755 Vorrichtung zur thermischen Behandlung von Substraten
WO2012112915A1 (en) * 2011-02-17 2012-08-23 Liporace Frank A Device for coating bone plate
US9915475B2 (en) * 2011-04-12 2018-03-13 Jiaxiong Wang Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes
US20140170805A1 (en) * 2012-12-14 2014-06-19 Heliovolt Corporation Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling
JP2014181882A (ja) * 2013-03-21 2014-09-29 Ngk Insulators Ltd 熱処理装置
TWI584489B (zh) * 2016-06-24 2017-05-21 Asia Neo Tech Industrial Co Ltd Method and processing device for hydrogen passivation treatment of solar cell sheet
KR101846509B1 (ko) * 2017-03-29 2018-04-09 (주)앤피에스 열원 장치 및 이를 구비하는 기판 처리 장치
CN110147032A (zh) * 2018-02-12 2019-08-20 上海微电子装备（集团）股份有限公司 掩模版移动装置、光刻机及光刻方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022835B2 (ja) 1978-08-17 1985-06-04 株式会社村田製作所 圧電性磁器の製造方法
JPS57183041A (en) 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor
JPS61129834A (ja) * 1984-11-28 1986-06-17 Dainippon Screen Mfg Co Ltd 光照射型熱処理装置
US5011794A (en) 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
DE59309438D1 (de) 1992-09-22 1999-04-15 Siemens Ag Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
JPH0778830A (ja) 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
JP2875768B2 (ja) 1994-11-30 1999-03-31 新日本無線株式会社 半導体基板の熱処理方法
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US5851929A (en) 1996-01-04 1998-12-22 Micron Technology, Inc. Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source
DE19711702C1 (de) 1997-03-20 1998-06-25 Siemens Ag Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb
US6171982B1 (en) 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same

Also Published As

Publication number Publication date
WO2001029901A3 (de) 2002-11-07
CN1413361A (zh) 2003-04-23
ATE481740T1 (de) 2010-10-15
EP1277237B1 (de) 2010-09-15
JP2003526067A (ja) 2003-09-02
AU2344901A (en) 2001-04-30
WO2001029901A2 (de) 2001-04-26
CN1187842C (zh) 2005-02-02
EP1277237A2 (de) 2003-01-22
US6703589B1 (en) 2004-03-09
DE50015995D1 (de) 2010-10-28
JP4488155B2 (ja) 2010-06-23
AU769237B2 (en) 2004-01-22

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