ES2352314T3 - Dispositivo y procedimiento para atemperar al menos un producto de procesamiento. - Google Patents
Dispositivo y procedimiento para atemperar al menos un producto de procesamiento. Download PDFInfo
- Publication number
- ES2352314T3 ES2352314T3 ES00987007T ES00987007T ES2352314T3 ES 2352314 T3 ES2352314 T3 ES 2352314T3 ES 00987007 T ES00987007 T ES 00987007T ES 00987007 T ES00987007 T ES 00987007T ES 2352314 T3 ES2352314 T3 ES 2352314T3
- Authority
- ES
- Spain
- Prior art keywords
- tempering
- layer
- gas
- space
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 128
- 238000012545 processing Methods 0.000 title claims description 65
- 230000008569 process Effects 0.000 claims abstract description 111
- 238000005496 tempering Methods 0.000 claims description 244
- 238000010521 absorption reaction Methods 0.000 claims description 35
- 239000011521 glass Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims description 5
- 229910000058 selane Inorganic materials 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims description 3
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 30
- 239000000463 material Substances 0.000 abstract description 29
- 239000010410 layer Substances 0.000 description 214
- 239000007789 gas Substances 0.000 description 167
- 230000005855 radiation Effects 0.000 description 47
- 230000005670 electromagnetic radiation Effects 0.000 description 35
- 230000005540 biological transmission Effects 0.000 description 14
- 230000033228 biological regulation Effects 0.000 description 12
- 238000001816 cooling Methods 0.000 description 12
- 125000006850 spacer group Chemical group 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- 229910052736 halogen Inorganic materials 0.000 description 9
- 150000002367 halogens Chemical class 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 238000009434 installation Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 239000000112 cooling gas Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 239000002241 glass-ceramic Substances 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 231100000331 toxic Toxicity 0.000 description 4
- 230000002588 toxic effect Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 230000036760 body temperature Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004556 laser interferometry Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000541 pulsatile effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000033458 reproduction Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten halide Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Photovoltaic Devices (AREA)
- Furnace Details (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
- Forging (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19950575 | 1999-10-20 | ||
| DE19950575 | 1999-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2352314T3 true ES2352314T3 (es) | 2011-02-17 |
Family
ID=7926306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES00987007T Expired - Lifetime ES2352314T3 (es) | 1999-10-20 | 2000-10-20 | Dispositivo y procedimiento para atemperar al menos un producto de procesamiento. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6703589B1 (enExample) |
| EP (1) | EP1277237B1 (enExample) |
| JP (1) | JP4488155B2 (enExample) |
| CN (1) | CN1187842C (enExample) |
| AT (1) | ATE481740T1 (enExample) |
| AU (1) | AU769237B2 (enExample) |
| DE (1) | DE50015995D1 (enExample) |
| ES (1) | ES2352314T3 (enExample) |
| WO (1) | WO2001029901A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10359102A1 (de) * | 2003-12-17 | 2005-07-21 | Carl Zeiss Smt Ag | Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung |
| JP3986021B2 (ja) * | 2003-12-26 | 2007-10-03 | オリジン電気株式会社 | 基板の処理方法及び装置 |
| US20090183675A1 (en) * | 2006-10-13 | 2009-07-23 | Mustafa Pinarbasi | Reactor to form solar cell absorbers |
| US20090050208A1 (en) * | 2006-10-19 | 2009-02-26 | Basol Bulent M | Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer |
| JP5176364B2 (ja) * | 2007-03-29 | 2013-04-03 | 日本電気株式会社 | 光加熱装置及び光加熱方法 |
| DE102008022784A1 (de) * | 2008-05-08 | 2009-11-12 | Avancis Gmbh & Co. Kg | Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer |
| ES2581378T3 (es) * | 2008-06-20 | 2016-09-05 | Volker Probst | Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados |
| AU2009319350B2 (en) * | 2008-11-28 | 2015-10-29 | Volker Probst | Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates |
| TWI418047B (zh) * | 2009-01-07 | 2013-12-01 | Ind Tech Res Inst | Ｉｂ－iiiａ－ｖｉａ2化合物半導體薄膜之製造裝置 |
| DE102010008084A1 (de) | 2010-02-15 | 2011-08-18 | Leybold Optics GmbH, 63755 | Vorrichtung zur thermischen Behandlung von Substraten |
| WO2012112915A1 (en) * | 2011-02-17 | 2012-08-23 | Liporace Frank A | Device for coating bone plate |
| US9915475B2 (en) * | 2011-04-12 | 2018-03-13 | Jiaxiong Wang | Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes |
| US20140170805A1 (en) * | 2012-12-14 | 2014-06-19 | Heliovolt Corporation | Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling |
| JP2014181882A (ja) * | 2013-03-21 | 2014-09-29 | Ngk Insulators Ltd | 熱処理装置 |
| TWI584489B (zh) * | 2016-06-24 | 2017-05-21 | Asia Neo Tech Industrial Co Ltd | Method and processing device for hydrogen passivation treatment of solar cell sheet |
| KR101846509B1 (ko) * | 2017-03-29 | 2018-04-09 | (주)앤피에스 | 열원 장치 및 이를 구비하는 기판 처리 장치 |
| CN110147032A (zh) * | 2018-02-12 | 2019-08-20 | 上海微电子装备（集团）股份有限公司 | 掩模版移动装置、光刻机及光刻方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6022835B2 (ja) | 1978-08-17 | 1985-06-04 | 株式会社村田製作所 | 圧電性磁器の製造方法 |
| JPS57183041A (en) | 1981-05-06 | 1982-11-11 | Nec Corp | Annealing method for chemical semiconductor |
| JPS61129834A (ja) | 1984-11-28 | 1986-06-17 | Dainippon Screen Mfg Co Ltd | 光照射型熱処理装置 |
| US5011794A (en) | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
| WO1994007269A1 (de) | 1992-09-22 | 1994-03-31 | Siemens Aktiengesellschaft | Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat |
| JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
| JP2875768B2 (ja) | 1994-11-30 | 1999-03-31 | 新日本無線株式会社 | 半導体基板の熱処理方法 |
| US5861609A (en) | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US5851929A (en) | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
| DE19711702C1 (de) | 1997-03-20 | 1998-06-25 | Siemens Ag | Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb |
| US6171982B1 (en) | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
-
2000
- 2000-10-20 WO PCT/DE2000/003719 patent/WO2001029901A2/de not_active Ceased
- 2000-10-20 JP JP2001531148A patent/JP4488155B2/ja not_active Expired - Lifetime
- 2000-10-20 AU AU23449/01A patent/AU769237B2/en not_active Ceased
- 2000-10-20 AT AT00987007T patent/ATE481740T1/de not_active IP Right Cessation
- 2000-10-20 ES ES00987007T patent/ES2352314T3/es not_active Expired - Lifetime
- 2000-10-20 CN CNB008175055A patent/CN1187842C/zh not_active Expired - Lifetime
- 2000-10-20 US US10/111,282 patent/US6703589B1/en not_active Expired - Lifetime
- 2000-10-20 DE DE50015995T patent/DE50015995D1/de not_active Expired - Lifetime
- 2000-10-20 EP EP00987007A patent/EP1277237B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4488155B2 (ja) | 2010-06-23 |
| AU769237B2 (en) | 2004-01-22 |
| EP1277237A2 (de) | 2003-01-22 |
| JP2003526067A (ja) | 2003-09-02 |
| WO2001029901A3 (de) | 2002-11-07 |
| DE50015995D1 (de) | 2010-10-28 |
| CN1187842C (zh) | 2005-02-02 |
| US6703589B1 (en) | 2004-03-09 |
| EP1277237B1 (de) | 2010-09-15 |
| AU2344901A (en) | 2001-04-30 |
| ATE481740T1 (de) | 2010-10-15 |
| WO2001029901A2 (de) | 2001-04-26 |
| CN1413361A (zh) | 2003-04-23 |
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