ES2179808T3 - Sensor hall con señal de offset reducida. - Google Patents

Sensor hall con señal de offset reducida.

Info

Publication number
ES2179808T3
ES2179808T3 ES00904921T ES00904921T ES2179808T3 ES 2179808 T3 ES2179808 T3 ES 2179808T3 ES 00904921 T ES00904921 T ES 00904921T ES 00904921 T ES00904921 T ES 00904921T ES 2179808 T3 ES2179808 T3 ES 2179808T3
Authority
ES
Spain
Prior art keywords
electrodes
contact
active surface
hall sensor
offset signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES00904921T
Other languages
English (en)
Inventor
Hans-Peter Hohe
Norbert Weber
Josef Sauerer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Application granted granted Critical
Publication of ES2179808T3 publication Critical patent/ES2179808T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/02—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups with provision for altering or correcting the law of variation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Technology Law (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Circuit For Audible Band Transducer (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

Elemento (1; 10) de sensor Hall con una superficie (5; 15) activa y electrodos (7a-7d; 17a17d) de contacto, en el que los electrodos (7a7d; 17a-17d) de contacto están formados a partir de dos electrodos (7a, 7c; 17a, 17c) de contacto de suministro de corriente opuestos entre sí entre los cuales se define la superficie (5, 15) activa para producir un flujo de corriente a través de la superficie (5, 15) activa, y a partir de dos electrodos (7b, 7d; 17b, 17d) de contacto de toma de corriente para tomar una tensión Hall, caracterizado porque, un segmento de los electrodos (7a-7d; 17a-17d) de contacto, que está dirigido a la superficie (5, 15) activa y limita con la superficie (5, 15) activa, muestra una geometría en forma escalonada, de segmento circular, elíptica, parabólica, hiperbólica o trapezoidal, o muestra una elevación rectangular para reducir la molesta influencia de los electrodos (7a-7d; 17a-17d) sobre la acción reductora de offset del funcionamiento ¿Spinning-Current¿, en la que todos los electrodos (7a-7d; 17a-17d) de contacto muestran una geometría idéntica y se disponen de forma simétrica respecto a la superficie (5, 15) activa, y en la que la longitud lateral de los electrodos (7a-7d; 17a-17d) de contacto es de un máximo del 20 % de la longitud lateral de la superficie (5) activa.
ES00904921T 1999-02-26 2000-01-17 Sensor hall con señal de offset reducida. Expired - Lifetime ES2179808T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19908473A DE19908473B4 (de) 1999-02-26 1999-02-26 Hall-Sensor mit reduziertem Offset-Signal

Publications (1)

Publication Number Publication Date
ES2179808T3 true ES2179808T3 (es) 2003-02-01

Family

ID=7899039

Family Applications (1)

Application Number Title Priority Date Filing Date
ES00904921T Expired - Lifetime ES2179808T3 (es) 1999-02-26 2000-01-17 Sensor hall con señal de offset reducida.

Country Status (13)

Country Link
US (1) US6639290B1 (es)
EP (1) EP1155287B1 (es)
JP (1) JP4340439B2 (es)
AT (1) ATE224040T1 (es)
CA (1) CA2363504C (es)
CZ (1) CZ301988B6 (es)
DE (2) DE19908473B4 (es)
DK (1) DK1155287T3 (es)
ES (1) ES2179808T3 (es)
HU (1) HU229006B1 (es)
PL (1) PL193791B1 (es)
PT (1) PT1155287E (es)
WO (1) WO2000052424A1 (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10158836B4 (de) * 2001-11-30 2007-06-06 Infineon Technologies Ag Verfahren und Vorrichtung zur Kalibrierung eines Sensorsystems
DE10244096B4 (de) * 2002-09-23 2015-05-28 Robert Bosch Gmbh Spinning-Current-Hallsensor mit homogener Raumladungszone
CN101471540B (zh) * 2003-12-22 2010-12-22 松下电器产业株式会社 面发光激光器和激光投射装置
WO2006028426A1 (fr) * 2004-09-08 2006-03-16 Inessa Antonovna Bolshakova Capteur de mesure de champ magnetique
EP2234185B1 (en) * 2009-03-24 2012-10-10 austriamicrosystems AG Vertical Hall sensor and method of producing a vertical Hall sensor
JP5815986B2 (ja) * 2010-07-05 2015-11-17 セイコーインスツル株式会社 ホールセンサ
US8357983B1 (en) * 2011-08-04 2013-01-22 Allegro Microsystems, Inc. Hall effect element having a wide cross shape with dimensions selected to result in improved performance characteristics
JP2013080792A (ja) * 2011-10-03 2013-05-02 Seiko Instruments Inc ホール素子
KR102019514B1 (ko) 2013-06-28 2019-11-15 매그나칩 반도체 유한회사 반도체 기반의 홀 센서
DE102013224409B4 (de) 2013-11-28 2022-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und verfahren zur erfassung einer position eines positionsgebers
DE102014109208A1 (de) 2014-07-01 2016-01-07 Infineon Technologies Austria Ag Ladungskompensationsvorrichtung und ihre herstellung
WO2016063510A1 (ja) * 2014-10-21 2016-04-28 旭化成エレクトロニクス株式会社 ホール素子
JP6483418B2 (ja) * 2014-11-27 2019-03-13 エイブリック株式会社 ホールセンサおよびホールセンサの温度によるオフセットの補償方法
KR102177431B1 (ko) 2014-12-23 2020-11-11 주식회사 키 파운드리 반도체 소자
US9638764B2 (en) 2015-04-08 2017-05-02 Allegro Microsystems, Llc Electronic circuit for driving a hall effect element with a current compensated for substrate stress
US10107873B2 (en) 2016-03-10 2018-10-23 Allegro Microsystems, Llc Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress
US20170288131A1 (en) * 2016-03-29 2017-10-05 Globalfoundries Singapore Pte. Ltd. Integrated hall effect sensors with voltage controllable sensitivity
US10162017B2 (en) 2016-07-12 2018-12-25 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
JP6929675B2 (ja) * 2016-11-18 2021-09-01 旭化成エレクトロニクス株式会社 ホール素子
JP7015087B2 (ja) * 2017-03-23 2022-02-02 旭化成エレクトロニクス株式会社 ホール素子
US10520559B2 (en) 2017-08-14 2019-12-31 Allegro Microsystems, Llc Arrangements for Hall effect elements and vertical epi resistors upon a substrate
CN107765197B (zh) * 2017-11-21 2020-07-07 上海南麟电子股份有限公司 一种霍尔传感器
CN112259679A (zh) * 2020-10-21 2021-01-22 佛山中科芯蔚科技有限公司 一种霍尔传感器及其制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1518957A (en) * 1975-11-25 1978-07-26 Standard Telephones Cables Ltd Hall effect device
JPS57128086A (en) * 1981-01-30 1982-08-09 Toshiba Corp Magneto-electric transducer element
JPS5842282A (ja) * 1981-09-04 1983-03-11 Seiko Instr & Electronics Ltd ホ−ル素子
JPS59129483A (ja) * 1983-01-14 1984-07-25 Matsushita Electric Ind Co Ltd ホ−ル素子
JPS62260375A (ja) * 1986-05-07 1987-11-12 Koa Corp ホ−ル素子およびその製造方法
JPS6370583A (ja) * 1986-09-12 1988-03-30 Asahi Glass Co Ltd ガリウム砒素ホ−ル素子
JPH01162386A (ja) 1987-12-18 1989-06-26 Matsushita Electron Corp ホール素子
JPH03211778A (ja) 1990-01-16 1991-09-17 Fujitsu Ltd ホール素子
JPH08102563A (ja) * 1994-08-02 1996-04-16 Toshiba Corp 半導体ホール素子
JPH10223940A (ja) 1997-02-07 1998-08-21 Toshiba Corp 半導体磁気センサ
ATE308761T1 (de) * 1998-03-30 2005-11-15 Sentron Ag Magnetfeldsensor

Also Published As

Publication number Publication date
CZ301988B6 (cs) 2010-08-25
PL193791B1 (pl) 2007-03-30
DE50000488D1 (de) 2002-10-17
ATE224040T1 (de) 2002-09-15
CA2363504C (en) 2004-04-06
EP1155287A1 (de) 2001-11-21
DE19908473B4 (de) 2004-01-22
JP4340439B2 (ja) 2009-10-07
HUP0200050A2 (en) 2002-05-29
CA2363504A1 (en) 2000-09-08
EP1155287B1 (de) 2002-09-11
DK1155287T3 (da) 2002-11-18
CZ20012746A3 (cs) 2001-12-12
US6639290B1 (en) 2003-10-28
HU229006B1 (en) 2013-07-29
PL349279A1 (en) 2002-07-15
DE19908473A1 (de) 2000-09-07
WO2000052424A1 (de) 2000-09-08
WO2000052424A8 (de) 2001-05-10
PT1155287E (pt) 2003-01-31
JP2004519870A (ja) 2004-07-02

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