WO2006028426A1 - Capteur de mesure de champ magnetique - Google Patents

Capteur de mesure de champ magnetique Download PDF

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Publication number
WO2006028426A1
WO2006028426A1 PCT/UA2004/000065 UA2004000065W WO2006028426A1 WO 2006028426 A1 WO2006028426 A1 WO 2006028426A1 UA 2004000065 W UA2004000065 W UA 2004000065W WO 2006028426 A1 WO2006028426 A1 WO 2006028426A1
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WO
WIPO (PCT)
Prior art keywords
contacts
current
transducer
magnetic field
potential
Prior art date
Application number
PCT/UA2004/000065
Other languages
English (en)
Russian (ru)
Inventor
Inessa Antonovna Bolshakova
Roman Lyubomyrovych Holyaka
Original Assignee
Inessa Antonovna Bolshakova
Roman Lyubomyrovych Holyaka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inessa Antonovna Bolshakova, Roman Lyubomyrovych Holyaka filed Critical Inessa Antonovna Bolshakova
Priority to PCT/UA2004/000065 priority Critical patent/WO2006028426A1/fr
Publication of WO2006028426A1 publication Critical patent/WO2006028426A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Definitions

  • the invention relates to semiconductor magnetic field sensors that use the Hall effect.
  • a known measuring transducer of a magnetic field (horizontal Hall transducer), which contains a rectangular working area formed in a semiconductor layer and four terminals, one on each side of the semiconductor region. Two opposite conclusions are current, and the other two are potential [RS Pororis, HaIl Efest Devices, Adam Nilger, Bristol, Philadelphia ap New York, 1991. P. 61.].
  • the output voltage of such a converter which is formed between its potential terminals, is proportional to the projection B z of the magnetic field induction vector normal to the plane of the semiconductor region.
  • the disadvantage of this transducer is the inability to measure a magnetic field whose induction vector is parallel to the plane of the semiconductor region, which limits its functionality.
  • a known magnetic field transducer (vertical Hall transducer), which contains a rectangular semiconductor region formed on a substrate, on the surface of which five contacts are placed. Three contacts are current, and two are potential. The first two current contacts are located on the periphery of the semiconductor region and are equidistant from the third current contact, which is located in the center of the semiconductor region. The first potential contact is located between the first and third current contacts, and the second potential contact is between the second and third current contacts contacts. Potential contacts are also equidistant from the third current contact [RS Pororis, HaIl Effest Devices, Adam Nilger, Bristol, Philadelphia app New York, 1991. P.61 .; F. Burger, P. -A. Wesse, RS Roorvis. New full iptegrad 3-D silicon HaIl sepsor forrescu apgular-rositiop measuremet. Sepors apd ⁇ utuators. A 67.1998. PP. 72-76.].
  • the supply current of such a converter flows in the semiconductor region in two mutually opposite directions.
  • the first direction is between the first and third current contacts, and the second is between the second and third current contacts.
  • the output of the vertical Hall converter is the voltage difference between the potential leads. This voltage difference is proportional to the projection (for example, B x ) of the magnetic field induction vector parallel to the plane of the semiconductor region and perpendicular to the direction of passage of the supply current of the converter in this region.
  • a magnetic field measuring transducer is formed on the basis of two vertical Hall transducers
  • the transmitter has nine contacts. In each of the four shoulders of the cross-shaped figure placed on one peripheral current and one potential contact. In the zone of intersection of the semiconductor regions of the vertical Hall converters, one central current contact is formed.
  • the peripheral current contacts are located on the periphery of the semiconductor regions and are equidistant from the central current contact.
  • Potential contacts are located between the peripheral current contacts and the central current contact and are also equidistant from the latter.
  • the disadvantage of such a measuring transducer of a magnetic field is the inability to measure a magnetic field whose induction vector is perpendicular to the plane of the semiconductor region (B z ). Part of this disadvantage can be overcome by combining a magnetic field transducer based on two vertical Hall transducers with one or more horizontal Hall transducers [F. Burger, P. -A. Wesse, RS Roorvis. New full iptegrad 3-D silicon HaIl sepsor forrescu apgular-rositiop measuremet. Sepors apd ⁇ utuators. ⁇ 67. 1998. PP. 72-76.].
  • the latter provide measurements of the projection B z of the magnetic field induction vector perpendicular to the plane of the measuring transducer.
  • the disadvantage of such an integrated design is its low spatial resolution and complexity. Low spatial resolution is due to the fact that vertical and horizontal converters cannot be combined with each other in a single spatial region. This makes it impossible to measure all three projections B x , B ⁇ and B z of the magnetic field induction vector at one spatial point, and therefore, low accuracy of the measurement results.
  • the complexity of the design of the measuring transducer determines its significant size and low reliability.
  • the basis of the invention is the task of creating a measuring transducer of the magnetic field, in which the introduction of new elements and relationships can improve the accuracy of measurement and simplify its design.
  • the measuring transducer of the magnetic field which contains two rectangular semiconductor regions of vertical Hall transducers formed on the substrate and crossed among themselves, which form a cross-shaped geometric figure with a crossing zone and four equal mutually perpendicular shoulders, and eight are formed on the surface of the semiconductor regions contacts - one current and one potential contact on each shoulder, and current
  • the contacts are located on the periphery of the shoulders and are equidistant from the crossing zone, and the potential contacts are located between the current contacts and the crossing zone and are equally equidistant from the latter, according to the invention
  • a semiconductor region of the horizontal Hall transducer is formed in the crossing zone, and two of its current contacts are two current contacts of one of the vertical Hall transducers, and its two potential contacts are two potential contacts for another vertical Hall converter.
  • the second distinguishing feature of the transducer is that the thickness of the semiconductor region of the horizontal Hall transducer is different from the thickness of the semiconductor regions of the vertical Hall transducer.
  • Figure l shows a diagram of a measuring transducer of a magnetic field, where 1 is a substrate; 2, 3, 4 and 5 - four shoulders of a cross-shaped figure, which is formed by the intersection of two semiconductor regions of the vertical Hall transducers; 6, 7, 8 and 9 - current contacts; 10, 11, 12 and 13 - potential contacts; 14 - semiconductor region of the horizontal Hall transducer.
  • the shoulders 2, 4 and contacts b, 8, 10, 12 form the first vertical Hall transducer, and the shoulders 3, 5 and contacts 7, 9, 11, 13 form the second vertical Hall transducer.
  • the first transducer is designed to measure the projection B x the magnetic field induction vector, and the second to measure the projection.
  • the principle of measuring the magnetic field of Hall converters is to form a voltage difference at the potential terminals when the charge carriers deflect in the semiconductor region under the action of the Lorentz force.
  • the operation of the magnetic field transducer according to the invention provides for two power modes.
  • the first mode provides the operation of vertical Hall transducers, and the second - horizontal.
  • the first power mode provides for the connection of the current contacts of the vertical Hall transducers, in which currents in their semiconductor regions flow in mutually opposite directions.
  • the current contacts of both vertical Hall converters combine into a single scheme. Namely, the contacts 6 and 8 of the first vertical Hall converter are connected together and connected to the first, for example, positive, output of the power source, and the contacts 7 and 9 of the second vertical Hall converter, also connected together, are connected to the second, respectively negative, power source.
  • currents flow from top to bottom (current 1 2 in arm 2) and from bottom to top (current I 4 in arm 4), in the second, from left to right (current I 3 in arm 3) and from right to left (current I 5 in the shoulder 5).
  • the output signals of the vertical Hall converters are formed at potential terminals in the form of a voltage difference, which is proportional to the product of the converter supply current by the corresponding projection of the magnetic field induction vector:
  • V (Il), V (12), V (13) and V (14) are the voltages at the potential terminals 11, 12, 13, 14, respectively;
  • the occurrence of the voltage difference at the potential terminals of the vertical Hall converters is explained by the fact that, as a result of opposite directions of the current flow in both arms of the converter, the deflection of the charge carriers in these arms also has the opposite direction.
  • the shoulder 2 of the first transducer carriers are deflected in the direction from the substrate to the surface of the semiconductor region, the shoulders 4 of this transducer in the direction from the surface to the substrate.
  • the voltage difference which is formed on the potential terminals of the vertical Hall converters, is an informative value of the averaged value of the field induction. Considering that all potential leads of the Hall vertical converters are equidistant from its center (crossing zone), the measured average induction value corresponds to the spatial point of the center of the measuring transducer.
  • the second power mode involves the use of only one pair of current contacts, in particular contacts 6 and 8 of the first vertical transducer. Then, terminal 6 is connected to the first terminal of the current source, and terminal 8 is connected to the second. This provides a rectilinear trajectory of charge carriers in the semiconductor region 14 of the horizontal Hall transducer.
  • the horizontal Hall transducer measures the value of the magnetic field induction at the spatial point of the center of the transducer.
  • the measuring transducer according to the invention makes it possible to measure all three projections B x , B ⁇ and B z of the magnetic field induction vector at a single spatial point.
  • the sensitivity of vertical Hall converters is inversely proportional to the width of the semiconductor regions W, and the horizontal converter to the thickness of its semiconductor region dg, the equality of these sensitivity values is ensured by the appropriate choice of the ratio W / d 2 . It is important that, in contrast to the thickness di of the semiconductor regions of the vertical Hall converters, the thickness dg of the semiconductor region of the horizontal converter can change after the conclusions are formed. In particular, a decrease in thickness d 2 can be realized by partial etching of the semiconductor layer.
  • Improving the accuracy of the measuring transducer according to the invention with respect to analogs is due to the fact that the horizontal Hall transducer is located in the center (intersection zone) of the vertical Hall transducers. This provides high spatial the combination of all the transducers (two vertical and one horizontal), and, therefore, all three projections B x , B ⁇ and B z of the magnetic field induction vector are measured at one spatial point. When measuring high-gradient fields, this gives a several-fold decrease in the measurement error of the magnetic field induction vector.
  • the simplification of the design of the measuring transducer according to the invention in relation to analogues is due to a number of circumstances. Firstly, the function of measuring three projections of the magnetic field is implemented by a single transducer, and not a set of vertical and horizontal transducers. Secondly, the number of transmitter leads is significantly reduced.
  • the particular efficiency of the measuring transducer according to the invention takes place when it is necessary to reduce the size of the measuring probe based on it. It is the conclusions and contact pads to them that determine the size of the structure as a whole.
  • Traditional modern manufacturing technologies make it possible to realize the dimensions of the semiconductor regions of the converter on the order of several micrometers.
  • the size of each contact pad is usually one hundred micrometers or more. Consequently, a significant decrease in the number of pads in the measuring
  • the transducer is the key to the subsequent miniaturization of the measurement probes.
  • reducing the number of terminals of the measuring transducer according to the invention allows to reduce the number of wires between the measuring probe and the signal processing circuit, as well as to increase the reliability of the operation of the converter.

Abstract

La présente invention se rapporte à des capteurs de champ magnétique semi-conducteurs faisant appel à l'effet Hall. Le capteur de mesure selon l'invention comprend deux régions semi-conductrices rectangulaires de capteurs de Hall verticaux, qui sont formées sur un substrat et entrecroisées, lesdites zones figurant une croix dotée d'une zone de croisement et de quatre bras perpendiculaires de mêmes dimensions. Huit contacts sont formés sur la surface des régions semi-conductrices, de façon que chaque bras comporte un contact de courant et un contact de potentiel, les contacts de courant étant disposés à la périphérie des bras et à équidistance de la zone de croisement, et les contacts de potentiel étant disposés entre les contacts de courant et la zone de croisement, et se trouvant eux aussi à équidistance de cette dernière. La région semi-conductrice d'un capteur Hall horizontal est formée dans la zone de croisement, deux contacts de courant dudit capteur se présentant sous la forme de deux contacts de courant de l'un des capteurs Hall verticaux, et deux contacts de potentiel dudit capteur se présentant sous la forme de deux contacts de potentiel de l'autre capteur Hall vertical. L'épaisseur de la région semi-conductrice du capteur Hall horizontal est différente de celle de la région semi-conductrice du capteur Hall vertical.
PCT/UA2004/000065 2004-09-08 2004-09-08 Capteur de mesure de champ magnetique WO2006028426A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/UA2004/000065 WO2006028426A1 (fr) 2004-09-08 2004-09-08 Capteur de mesure de champ magnetique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/UA2004/000065 WO2006028426A1 (fr) 2004-09-08 2004-09-08 Capteur de mesure de champ magnetique

Publications (1)

Publication Number Publication Date
WO2006028426A1 true WO2006028426A1 (fr) 2006-03-16

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8426936B2 (en) 2009-03-24 2013-04-23 Austriamicrosystems Ag Vertical Hall sensor and method of producing a vertical Hall sensor
US8829900B2 (en) 2011-02-08 2014-09-09 Infineon Technologies Ag Low offset spinning current hall plate and method to operate it
US8896303B2 (en) 2011-02-08 2014-11-25 Infineon Technologies Ag Low offset vertical Hall device and current spinning method
DE102014010547A1 (de) * 2014-07-14 2016-01-14 Albert-Ludwigs-Universität Freiburg Hallsensor
CN107317576A (zh) * 2017-05-25 2017-11-03 南京邮电大学 一种用于霍尔传感器的八相旋转电流电路
CN109521379A (zh) * 2017-09-20 2019-03-26 德州仪器公司 用于检测二维平面内磁场的垂直霍尔效应传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0154129A1 (fr) * 1984-02-08 1985-09-11 Institut Dr. Friedrich Förster Prüfgerätebau GmbH & Co. KG Sonde triple magnétique
EP0954085A1 (fr) * 1998-04-27 1999-11-03 Roulements Miniatures S.A. Capteur vertical à effet Hall et moteur électrique sans balai avec un capteur vertical à effet Hall
US6639290B1 (en) * 1999-02-26 2003-10-28 Fraunhofer-Gesellschaft Zur Foerderung, Der Angewandten Forschung E.V. Hall sensor with a reduced offset signal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0154129A1 (fr) * 1984-02-08 1985-09-11 Institut Dr. Friedrich Förster Prüfgerätebau GmbH & Co. KG Sonde triple magnétique
EP0954085A1 (fr) * 1998-04-27 1999-11-03 Roulements Miniatures S.A. Capteur vertical à effet Hall et moteur électrique sans balai avec un capteur vertical à effet Hall
US6639290B1 (en) * 1999-02-26 2003-10-28 Fraunhofer-Gesellschaft Zur Foerderung, Der Angewandten Forschung E.V. Hall sensor with a reduced offset signal

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8426936B2 (en) 2009-03-24 2013-04-23 Austriamicrosystems Ag Vertical Hall sensor and method of producing a vertical Hall sensor
US8829900B2 (en) 2011-02-08 2014-09-09 Infineon Technologies Ag Low offset spinning current hall plate and method to operate it
US8896303B2 (en) 2011-02-08 2014-11-25 Infineon Technologies Ag Low offset vertical Hall device and current spinning method
US9116196B2 (en) 2011-02-08 2015-08-25 Infineon Technologies Ag Low offset vertical hall device and current spinning method
US9261572B2 (en) 2011-02-08 2016-02-16 Infineon Technologies Ag Low offset spinning current hall plate and method to operate it
US9423471B2 (en) 2011-02-08 2016-08-23 Infineon Technologies Ag Low offset vertical hall device and current spinning method
DE102012201727B4 (de) 2011-02-08 2021-08-12 Infineon Technologies Ag Hallplatte mit niedrigem spinning-strom-versatz und verfahren zum betreiben derselben
DE102014010547A1 (de) * 2014-07-14 2016-01-14 Albert-Ludwigs-Universität Freiburg Hallsensor
US9709639B2 (en) 2014-07-14 2017-07-18 Tdk-Micronas Gmbh Hall effect sensor
DE102014010547B4 (de) 2014-07-14 2023-06-07 Albert-Ludwigs-Universität Freiburg Hallsensor
CN107317576A (zh) * 2017-05-25 2017-11-03 南京邮电大学 一种用于霍尔传感器的八相旋转电流电路
CN109521379A (zh) * 2017-09-20 2019-03-26 德州仪器公司 用于检测二维平面内磁场的垂直霍尔效应传感器

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