ES2078949T3 - Fabricacion de dispositivo que comprende un proceso litografico. - Google Patents
Fabricacion de dispositivo que comprende un proceso litografico.Info
- Publication number
- ES2078949T3 ES2078949T3 ES90308259T ES90308259T ES2078949T3 ES 2078949 T3 ES2078949 T3 ES 2078949T3 ES 90308259 T ES90308259 T ES 90308259T ES 90308259 T ES90308259 T ES 90308259T ES 2078949 T3 ES2078949 T3 ES 2078949T3
- Authority
- ES
- Spain
- Prior art keywords
- manufacture
- models
- filter
- produce
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31791—Scattering mask
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
FABRICACION DE DISPOSITIVOS CON TAMAÑO DE CARACTERISTICAS MINIMAS DE MICRA Y SUBMICRA, QUE SE LLEVA A CABO MEDIANTE PROCESAMIENTO LITOGRAFICO EN QUE INTERVIENE UN FILTRO PLANO FOCAL TRASERO (8). UN TRATAMIENTO DE LA FABRICACION QUE IMPORTA PARTICULARMENTE DEPENDE DE LOS MODELOS DE MASCARA QUE PRODUCEN IMAGENES BASADAS EN LA DISCRIMINACION, COMO ENTRE LA RADIACION DISEMINADA (1B) Y SIN DISEMINAR (1A) MEDIANTE ELECTRONES ACELERADOS. POR EL CAMBIO DE FILTRO ES POSIBLE PRODUCIR DOS MODELOS COMPLEMENTARIOS DE LA MISMA MASCARA.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/390,139 US5079112A (en) | 1989-08-07 | 1989-08-07 | Device manufacture involving lithographic processing |
US07/498,179 US5130213A (en) | 1989-08-07 | 1990-03-23 | Device manufacture involving lithographic processing |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2078949T3 true ES2078949T3 (es) | 1996-01-01 |
Family
ID=27012996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES90308259T Expired - Lifetime ES2078949T3 (es) | 1989-08-07 | 1990-07-27 | Fabricacion de dispositivo que comprende un proceso litografico. |
Country Status (7)
Country | Link |
---|---|
US (2) | US5130213A (es) |
EP (1) | EP0412690B1 (es) |
JP (4) | JPH0834169B2 (es) |
CA (1) | CA2020237C (es) |
DE (1) | DE69023073T2 (es) |
ES (1) | ES2078949T3 (es) |
HK (1) | HK34696A (es) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112684657A (zh) * | 2020-12-24 | 2021-04-20 | 四川长虹电器股份有限公司 | 一种准直固态发光芯片或芯片阵列光源的方法 |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258246A (en) * | 1989-08-07 | 1993-11-02 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
US5130213A (en) * | 1989-08-07 | 1992-07-14 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
JP2957669B2 (ja) * | 1990-09-28 | 1999-10-06 | 株式会社東芝 | 反射マスク及びこれを用いた荷電ビーム露光装置 |
US5254438A (en) * | 1990-11-29 | 1993-10-19 | Hewlett-Packard Company | Single pass compensation for electron beam proximity effect |
KR960010023B1 (ko) * | 1991-02-19 | 1996-07-25 | 후지쓰 가부시끼가이샤 | 투영노광(投影露光) 방법 및 투영노광용 광학 마스크 |
JPH05134385A (ja) * | 1991-11-11 | 1993-05-28 | Nikon Corp | 反射マスク |
US5316879A (en) * | 1992-07-14 | 1994-05-31 | At&T Bell Laboratories | Sub-micron device fabrication using multiple aperture filter |
US5279925A (en) * | 1992-12-16 | 1994-01-18 | At&T Bell Laboratories | Projection electron lithographic procedure |
US5382498A (en) * | 1992-12-16 | 1995-01-17 | At&T Corp. | Processes for electron lithography |
EP0669636A1 (en) * | 1994-02-25 | 1995-08-30 | AT&T Corp. | Manufacturing system error detection |
US5624774A (en) * | 1994-06-16 | 1997-04-29 | Nikon Corporation | Method for transferring patterns with charged particle beam |
JPH08124834A (ja) * | 1994-10-26 | 1996-05-17 | Nikon Corp | 荷電粒子線転写装置 |
JPH08124833A (ja) * | 1994-10-26 | 1996-05-17 | Nikon Corp | 荷電粒子線転写用マスク |
US5689117A (en) * | 1994-11-22 | 1997-11-18 | Nikon Corporation | Apparatus for image transfer with charged particle beam, and deflector and mask used with such apparatus |
US5773837A (en) * | 1994-11-22 | 1998-06-30 | Nikon Corporation | Apparatus for image transfer with charged particle beam, and deflector and mask used with such apparatus |
US5532496A (en) * | 1994-12-14 | 1996-07-02 | International Business Machines Corporation | Proximity effect compensation in scattering-mask lithographic projection systems and apparatus therefore |
US5561008A (en) * | 1995-01-27 | 1996-10-01 | Lucent Technologies Inc. | Process for device fabrication using projection lithography and an apparatus therefor |
JPH08236428A (ja) * | 1995-03-01 | 1996-09-13 | Nikon Corp | 荷電粒子線露光方法及びそれに用いるマスク |
JP3940824B2 (ja) * | 1995-08-14 | 2007-07-04 | 株式会社ニコン | 荷電粒子線によるパターン転写方法および転写装置 |
JP3601630B2 (ja) * | 1995-11-01 | 2004-12-15 | 株式会社ニコン | 荷電粒子線転写方法 |
US5751004A (en) * | 1997-01-24 | 1998-05-12 | International Business Machines Corporation | Projection reticle transmission control for coulomb interaction analysis |
US5942760A (en) * | 1997-11-03 | 1999-08-24 | Motorola Inc. | Method of forming a semiconductor device utilizing scalpel mask, and mask therefor |
US5985493A (en) | 1998-04-08 | 1999-11-16 | Lucent Technologies Inc. | Membrane mask for projection lithography |
US7001713B2 (en) * | 1998-04-18 | 2006-02-21 | United Microelectronics, Corp. | Method of forming partial reverse active mask |
US6051346A (en) * | 1998-04-29 | 2000-04-18 | Lucent Technologies Inc. | Process for fabricating a lithographic mask |
US6297169B1 (en) * | 1998-07-27 | 2001-10-02 | Motorola, Inc. | Method for forming a semiconductor device using a mask having a self-assembled monolayer |
US6177218B1 (en) | 1998-08-07 | 2001-01-23 | Lucent Technologies Inc. | Lithographic process for device fabrication using electron beam imaging |
US6376847B1 (en) | 1998-08-24 | 2002-04-23 | Matsushia Electric Industrial Co., Ltd. | Charged particle lithography method and system |
JP2000100715A (ja) | 1998-09-17 | 2000-04-07 | Nikon Corp | 電子ビーム露光装置の調整方法 |
US6355383B1 (en) | 1999-02-24 | 2002-03-12 | Nec Corporation | Electron-beam exposure system, a mask for electron-beam exposure and a method for electron-beam exposure |
US6394109B1 (en) | 1999-04-13 | 2002-05-28 | Applied Materials, Inc. | Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system |
JP3706527B2 (ja) | 1999-06-30 | 2005-10-12 | Hoya株式会社 | 電子線描画用マスクブランクス、電子線描画用マスクおよび電子線描画用マスクの製造方法 |
JP2001093803A (ja) * | 1999-09-20 | 2001-04-06 | Sony Corp | リソグラフィーにおけるボケ量の算出方法及びリソグラフィー方法 |
US6324933B1 (en) | 1999-10-06 | 2001-12-04 | Agere Systems Guardian Corp. | Planar movable stage mechanism |
JP3360725B2 (ja) | 1999-10-19 | 2002-12-24 | 日本電気株式会社 | 電子線露光方法、並びにこれに用いるマスク及び電子線露光装置 |
JP3360666B2 (ja) * | 1999-11-12 | 2002-12-24 | 日本電気株式会社 | 描画パターン検証方法 |
JP2001144008A (ja) * | 1999-11-17 | 2001-05-25 | Nec Corp | 電子線露光方法、並びにこれに用いるマスク及び電子線露光装置 |
US6469775B1 (en) | 2000-01-31 | 2002-10-22 | Micron Technology, Inc. | Reticle for creating resist-filled vias in a dual damascene process |
DE10041040A1 (de) * | 2000-08-22 | 2002-03-07 | Zeiss Carl | Vorrichtung und Verfahren zur Belichtung einer strahlungsempfindlichen Schicht mittels geladener Teilchen sowie Maske hierfür |
JP2002170760A (ja) * | 2000-12-01 | 2002-06-14 | Nikon Corp | 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法 |
US20020070354A1 (en) * | 2000-12-11 | 2002-06-13 | Nobuo Shimazu | Manufacturing method of mask for electron beam proximity exposure and mask |
KR100597014B1 (ko) * | 2001-01-10 | 2006-07-06 | 재단법인서울대학교산학협력재단 | 물질의 결정 구조를 이용한 패턴 형성 방법 및 그 구조를갖는 기능성 소자 |
KR100462055B1 (ko) * | 2001-04-03 | 2004-12-17 | 재단법인서울대학교산학협력재단 | 물질의 결정구조를 이용한 패턴 형성 방법 및 장치 |
DE10117025A1 (de) | 2001-04-05 | 2002-10-10 | Zeiss Carl | Teilchenoptische Vorrichtung,Beleuchtungsvorrichtung und Projektionssystem sowie Verfahren unter Verwendung derselben |
TW530336B (en) * | 2001-08-21 | 2003-05-01 | Asml Masktools Bv | Lithographic method and lithographic apparatus |
FR2890461B1 (fr) * | 2005-09-05 | 2008-12-26 | Sagem Defense Securite | Obturateur et illuminateur d'un dispositif de photolithographie |
US7897008B2 (en) * | 2006-10-27 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for regional plasma control |
US8387674B2 (en) | 2007-11-30 | 2013-03-05 | Taiwan Semiconductor Manufacturing Comany, Ltd. | Chip on wafer bonder |
US8178280B2 (en) * | 2010-02-05 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-contained proximity effect correction inspiration for advanced lithography (special) |
FR2996015B1 (fr) * | 2012-09-25 | 2014-09-12 | Sagem Defense Securite | Illuminateur de dispositif de photolithographie permettant la diffraction controlee |
JP6190168B2 (ja) * | 2013-06-04 | 2017-08-30 | キヤノン株式会社 | 合焦方法、合焦装置、露光方法、およびデバイス製造方法 |
JP2015050439A (ja) * | 2013-09-04 | 2015-03-16 | 株式会社東芝 | 描画データの補正方法、描画方法、及びリソグラフィ用のマスク又はテンプレートの製造方法 |
JP7474151B2 (ja) * | 2020-08-21 | 2024-04-24 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム描画装置及びマルチ電子ビーム描画方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL127366C (es) * | 1958-09-19 | |||
US3630598A (en) * | 1970-01-02 | 1971-12-28 | Xerox Corp | Optical demodulation filter |
US3687535A (en) * | 1970-02-13 | 1972-08-29 | Xerox Corp | Optical demodulation system |
DE2508322C2 (de) * | 1975-02-26 | 1977-02-24 | Siemens Ag | Anwendung der dunkelfeld-elektronenmikroskopie |
US4039810A (en) * | 1976-06-30 | 1977-08-02 | International Business Machines Corporation | Electron projection microfabrication system |
EP0121412B1 (en) * | 1983-03-29 | 1991-11-27 | Kabushiki Kaisha Toshiba | Method of forming by projection an integrated circuit pattern on a semiconductor wafer |
US5079112A (en) * | 1989-08-07 | 1992-01-07 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
US5258246A (en) * | 1989-08-07 | 1993-11-02 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
US5130213A (en) * | 1989-08-07 | 1992-07-14 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
US5260151A (en) * | 1991-12-30 | 1993-11-09 | At&T Bell Laboratories | Device manufacture involving step-and-scan delineation |
US5279925A (en) * | 1992-12-16 | 1994-01-18 | At&T Bell Laboratories | Projection electron lithographic procedure |
JPH0834169A (ja) * | 1994-07-25 | 1996-02-06 | Mitsubishi Paper Mills Ltd | 感熱転写用受像シート |
-
1990
- 1990-03-23 US US07/498,179 patent/US5130213A/en not_active Ceased
- 1990-06-29 CA CA002020237A patent/CA2020237C/en not_active Expired - Fee Related
- 1990-07-27 ES ES90308259T patent/ES2078949T3/es not_active Expired - Lifetime
- 1990-07-27 DE DE69023073T patent/DE69023073T2/de not_active Revoked
- 1990-07-27 EP EP90308259A patent/EP0412690B1/en not_active Revoked
- 1990-08-07 JP JP2207723A patent/JPH0834169B2/ja not_active Expired - Lifetime
-
1994
- 1994-04-29 US US08/236,742 patent/USRE36964E/en not_active Expired - Lifetime
-
1996
- 1996-02-29 HK HK34696A patent/HK34696A/xx not_active IP Right Cessation
-
1997
- 1997-08-04 JP JP20904497A patent/JP2857384B2/ja not_active Expired - Lifetime
-
1999
- 1999-02-02 JP JP02515999A patent/JP3153521B2/ja not_active Expired - Lifetime
- 1999-03-03 JP JP05538499A patent/JP3153525B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112684657A (zh) * | 2020-12-24 | 2021-04-20 | 四川长虹电器股份有限公司 | 一种准直固态发光芯片或芯片阵列光源的方法 |
CN112684657B (zh) * | 2020-12-24 | 2022-02-01 | 四川长虹电器股份有限公司 | 一种准直固态发光芯片或芯片阵列光源的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2857384B2 (ja) | 1999-02-17 |
JPH11329959A (ja) | 1999-11-30 |
JP3153525B2 (ja) | 2001-04-09 |
EP0412690B1 (en) | 1995-10-18 |
JPH0834169B2 (ja) | 1996-03-29 |
EP0412690A3 (en) | 1991-09-04 |
JPH11317360A (ja) | 1999-11-16 |
JPH03101214A (ja) | 1991-04-26 |
USRE36964E (en) | 2000-11-21 |
JPH1074695A (ja) | 1998-03-17 |
US5130213A (en) | 1992-07-14 |
JP3153521B2 (ja) | 2001-04-09 |
EP0412690A2 (en) | 1991-02-13 |
HK34696A (en) | 1996-03-08 |
DE69023073D1 (de) | 1995-11-23 |
CA2020237C (en) | 1994-06-07 |
CA2020237A1 (en) | 1991-02-08 |
DE69023073T2 (de) | 1996-03-21 |
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