ES2064300T1 - Crisol de soporte de multiples partes. - Google Patents
Crisol de soporte de multiples partes.Info
- Publication number
- ES2064300T1 ES2064300T1 ES92918008T ES92918008T ES2064300T1 ES 2064300 T1 ES2064300 T1 ES 2064300T1 ES 92918008 T ES92918008 T ES 92918008T ES 92918008 T ES92918008 T ES 92918008T ES 2064300 T1 ES2064300 T1 ES 2064300T1
- Authority
- ES
- Spain
- Prior art keywords
- pot
- crisol
- respect
- wall
- central line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Abstract
SE PROPONE UN CRISOL (3) SOPORTE COMPUESTO DE SEGMENTO (2) PARA SU UTILIZACION EN CRISOLES (1) DE FUNDICION EN INSTALACIONES DE EXTRACCION DE CRISTAL. LA SUPERFICIES QUE DELIMITAN LOS SEGMENTOS (2) CON RESPECTO A LOS SEGMENTOS VECINOS RESPECTIVOS SE SOLAPAN AL MENOS EN LA ZONA DE LA PARED (11) DE CRISOL. SE EVITA CON ELLO LA EXPOSICION DIRECTA DE LA PARED DEL CRISOL (11) DE FUSION A LA EMANACION DE RADIACIONES TERMICAS DE LOS ELEMENTOS DE CALENTAMIENTO. DE ACUERDO CON EL PROCESO DE FABRICACION REFERIDO, EL CRISOL (3) SOPORTE ESTA PRODUCIDO MEDIANTE CORTES PARALELOS CON RESPECTO A LA LINEA CENTRAL DE UN CRISOL NO SEGMENTADO EN UN ANGULO CON RESPECTO A LA SUPERFICIE (11) DE CUBIERTA QUE SE EXTIENDE EN FORMA CURVA DESDE EL PUNTO DE ARRANQUE EN LA CUBIERTA (11) DEL CRISOL A LA LINEA CENTRAL DEL CRISOL.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4130253A DE4130253C2 (de) | 1991-09-12 | 1991-09-12 | Mehrteiliger Stütztiegel und Verfahren zu seiner Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
ES2064300T1 true ES2064300T1 (es) | 1995-02-01 |
ES2064300T3 ES2064300T3 (es) | 1995-08-01 |
Family
ID=6440387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92918008T Expired - Lifetime ES2064300T3 (es) | 1991-09-12 | 1992-08-26 | Crisol de soporte de multiples partes. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5372090A (es) |
EP (1) | EP0557480B1 (es) |
KR (1) | KR100198874B1 (es) |
CZ (1) | CZ286853B6 (es) |
DE (1) | DE4130253C2 (es) |
ES (1) | ES2064300T3 (es) |
FI (1) | FI113378B (es) |
WO (1) | WO1993005205A1 (es) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19723070A1 (de) * | 1997-06-02 | 1998-12-03 | Siemens Ag | Vorrichtung und Verfahren zum Schmelzen und Kristallisieren von Stoffen |
EP0892091A1 (en) * | 1997-07-03 | 1999-01-20 | MEMC Electronic Materials, Inc. | Graphite support vessels having a low concentration of calcium impurities and use thereof for production of single-crystal silicon |
DE19806863A1 (de) * | 1998-02-19 | 1999-08-26 | Herbst Bremer Goldschlaegerei | Verfahren zum Schmelzen von Gußwerkstoffen und vorzugsweise zur Durchführung des Verfahrens dienender Schmelztiegel |
DE19830785A1 (de) * | 1998-07-09 | 2000-01-13 | Wacker Siltronic Halbleitermat | Stütztiegel zur Stützung von Schmelztiegeln |
FR2804132B1 (fr) * | 2000-01-20 | 2002-06-07 | Lorraine Carbone | Porte-creuset pour le tirage de monocristaux |
FR2804131A1 (fr) * | 2000-01-20 | 2001-07-27 | Lorraine Carbone | Porte-creuset pour le tirage de monocristaux |
US20020124792A1 (en) * | 2001-01-09 | 2002-09-12 | Hariprasad Sreedharamurthy | Crystal puller and method for growing single crystal semiconductor material |
JP3617466B2 (ja) * | 2001-03-16 | 2005-02-02 | 三菱住友シリコン株式会社 | 単結晶引上げ装置 |
DE10321785A1 (de) * | 2003-05-14 | 2004-12-16 | Sgl Carbon Ag | Dauerhafter CFC-Stütztiegel für Hochtemperaturprozesse beim Ziehen von Halbleiterkristallen |
KR100995927B1 (ko) * | 2008-10-16 | 2010-11-22 | 한국에너지기술연구원 | 실리콘 전자기 유도 용융용 흑연 도가니 및 이를 이용한 실리콘 용융 정련 장치 |
KR101063250B1 (ko) * | 2008-10-16 | 2011-09-07 | 한국에너지기술연구원 | 실리콘 전자기 유도 용융용 흑연 도가니 및 이를 이용한 실리콘 용융 정련 장치 |
CN102115909A (zh) * | 2010-10-13 | 2011-07-06 | 浙江舒奇蒙能源科技有限公司 | 一种三瓣石墨坩埚单晶炉 |
JP5870406B2 (ja) * | 2012-05-29 | 2016-03-01 | 東海カーボン株式会社 | 坩堝保持具および坩堝保持具の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320522A (en) * | 1976-08-10 | 1978-02-24 | Toshiba Corp | Pulse width modulated circuit for d.c. motor control circuit |
JPS549172A (en) * | 1977-06-24 | 1979-01-23 | Toshiba Corp | Method of producing single crystal |
JPS57170892A (en) * | 1981-04-10 | 1982-10-21 | Toshiba Ceramics Co Ltd | Crucible holder made of graphite for manufacture of silicon single crystal |
JPS5895693A (ja) * | 1981-11-30 | 1983-06-07 | Toshiba Ceramics Co Ltd | 単結晶引上げ用黒鉛ルツボ |
JPS6163593A (ja) * | 1984-09-05 | 1986-04-01 | Toshiba Corp | 化合物半導体単結晶の製造装置 |
DE3743952A1 (de) * | 1986-12-26 | 1988-07-07 | Toshiba Ceramics Co | Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben |
JPS6454319A (en) * | 1987-08-26 | 1989-03-01 | Sumitomo Electric Industries | Measuring method for temperature of molten metal |
JP2579951B2 (ja) * | 1987-09-14 | 1997-02-12 | 株式会社東芝 | 半導体単結晶の製造装置 |
JPS6479093A (en) * | 1987-09-22 | 1989-03-24 | Nippon Steel Corp | Pulling up device for single crystal rod |
SU1487514A1 (ru) * | 1987-10-19 | 1990-10-15 | Gnii Pi Redkometa | Подставка под кварцевый тигель ; |
DE4007053A1 (de) * | 1989-03-21 | 1990-09-27 | Schunk Kohlenstofftechnik Gmbh | Graphittiegel, verfahren zu seiner herstellung und verwendung |
JPH03174390A (ja) * | 1989-12-01 | 1991-07-29 | Nippon Steel Corp | 単結晶の製造装置 |
JPH03228892A (ja) * | 1990-01-31 | 1991-10-09 | Japan Silicon Co Ltd | 半導体製造装置 |
-
1991
- 1991-09-12 DE DE4130253A patent/DE4130253C2/de not_active Expired - Lifetime
-
1992
- 1992-08-26 ES ES92918008T patent/ES2064300T3/es not_active Expired - Lifetime
- 1992-08-26 WO PCT/EP1992/001956 patent/WO1993005205A1/de active IP Right Grant
- 1992-08-26 CZ CZ1993642A patent/CZ286853B6/cs not_active IP Right Cessation
- 1992-08-26 EP EP92918008A patent/EP0557480B1/de not_active Expired - Lifetime
-
1993
- 1993-04-16 KR KR1019930701136A patent/KR100198874B1/ko not_active IP Right Cessation
- 1993-05-11 FI FI932128A patent/FI113378B/fi not_active IP Right Cessation
- 1993-05-12 US US08/060,729 patent/US5372090A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CZ64293A3 (en) | 1994-01-19 |
EP0557480B1 (de) | 1995-05-17 |
CZ286853B6 (cs) | 2000-07-12 |
FI932128A0 (fi) | 1993-05-11 |
EP0557480A1 (en) | 1993-09-01 |
ES2064300T3 (es) | 1995-08-01 |
DE4130253C2 (de) | 2001-10-04 |
FI932128A (fi) | 1993-05-11 |
FI113378B (fi) | 2004-04-15 |
KR100198874B1 (en) | 1999-06-15 |
US5372090A (en) | 1994-12-13 |
KR930702558A (ko) | 1993-09-09 |
WO1993005205A1 (de) | 1993-03-18 |
DE4130253A1 (de) | 1993-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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