FR2804132B1 - Porte-creuset pour le tirage de monocristaux - Google Patents
Porte-creuset pour le tirage de monocristauxInfo
- Publication number
- FR2804132B1 FR2804132B1 FR0002332A FR0002332A FR2804132B1 FR 2804132 B1 FR2804132 B1 FR 2804132B1 FR 0002332 A FR0002332 A FR 0002332A FR 0002332 A FR0002332 A FR 0002332A FR 2804132 B1 FR2804132 B1 FR 2804132B1
- Authority
- FR
- France
- Prior art keywords
- single crystals
- crucible holder
- drawing single
- crucible
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0002332A FR2804132B1 (fr) | 2000-01-20 | 2000-02-24 | Porte-creuset pour le tirage de monocristaux |
US09/514,374 US6334898B1 (en) | 2000-01-20 | 2000-02-28 | Crucible holder for pulling monocrystals |
PCT/FR2001/000159 WO2001053572A2 (fr) | 2000-01-20 | 2001-01-18 | Porte-creuset pour le tirage de monocristaux |
EP01907624A EP1206591A2 (fr) | 2000-01-20 | 2001-01-18 | Porte-creuset pour le tirage de monocristaux |
KR1020017011721A KR100733798B1 (ko) | 2000-01-20 | 2001-01-18 | 단결정 인상용 도가니 홀더 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0000722A FR2804131A1 (fr) | 2000-01-20 | 2000-01-20 | Porte-creuset pour le tirage de monocristaux |
FR0002332A FR2804132B1 (fr) | 2000-01-20 | 2000-02-24 | Porte-creuset pour le tirage de monocristaux |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2804132A1 FR2804132A1 (fr) | 2001-07-27 |
FR2804132B1 true FR2804132B1 (fr) | 2002-06-07 |
Family
ID=26212107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0002332A Expired - Fee Related FR2804132B1 (fr) | 2000-01-20 | 2000-02-24 | Porte-creuset pour le tirage de monocristaux |
Country Status (5)
Country | Link |
---|---|
US (1) | US6334898B1 (fr) |
EP (1) | EP1206591A2 (fr) |
KR (1) | KR100733798B1 (fr) |
FR (1) | FR2804132B1 (fr) |
WO (1) | WO2001053572A2 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3617466B2 (ja) * | 2001-03-16 | 2005-02-02 | 三菱住友シリコン株式会社 | 単結晶引上げ装置 |
JP5286589B2 (ja) * | 2008-05-01 | 2013-09-11 | イビデン株式会社 | ルツボ保持部材およびその製造方法 |
JP5027168B2 (ja) * | 2009-01-22 | 2012-09-19 | ジャパンスーパークォーツ株式会社 | 単結晶引上げ用ルツボ及び単結晶引上げ方法 |
USD771167S1 (en) | 2013-08-21 | 2016-11-08 | A.L.M.T. Corp. | Crucible |
FR3029214B1 (fr) * | 2014-12-02 | 2019-06-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Creuset reutilisable pour la fabrication de materiau cristallin. |
CN108149315B (zh) * | 2018-01-24 | 2020-10-23 | 中国科学院上海硅酸盐研究所 | 晶体生长用坩埚以及释放碳化硅晶体热应力的方法 |
CN112341232B (zh) * | 2020-10-28 | 2022-04-08 | 西安超码科技有限公司 | 一种炭/炭坩埚及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USH520H (en) * | 1985-12-06 | 1988-09-06 | Technique for increasing oxygen incorporation during silicon czochralski crystal growth | |
GB2188854A (en) * | 1986-04-09 | 1987-10-14 | Philips Electronic Associated | Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method |
JPH03228892A (ja) * | 1990-01-31 | 1991-10-09 | Japan Silicon Co Ltd | 半導体製造装置 |
JPH04321584A (ja) * | 1991-04-22 | 1992-11-11 | Kawasaki Steel Corp | 単結晶引上装置用カーボン坩堝 |
DE4130253C2 (de) | 1991-09-12 | 2001-10-04 | Sgl Carbon Ag | Mehrteiliger Stütztiegel und Verfahren zu seiner Herstellung |
JPH06345587A (ja) * | 1993-06-08 | 1994-12-20 | Toyo Tanso Kk | シリコン単結晶引き上げ装置用黒鉛製ルツボ |
DE4325522C1 (de) * | 1993-07-30 | 1994-11-17 | Schunk Kohlenstofftechnik Gmbh | Tiegel, insbesondere Stütztiegel |
JP3551736B2 (ja) * | 1997-12-05 | 2004-08-11 | 三菱住友シリコン株式会社 | 単結晶引上装置のカーボンサセプタ |
-
2000
- 2000-02-24 FR FR0002332A patent/FR2804132B1/fr not_active Expired - Fee Related
- 2000-02-28 US US09/514,374 patent/US6334898B1/en not_active Expired - Lifetime
-
2001
- 2001-01-18 WO PCT/FR2001/000159 patent/WO2001053572A2/fr active Application Filing
- 2001-01-18 KR KR1020017011721A patent/KR100733798B1/ko not_active IP Right Cessation
- 2001-01-18 EP EP01907624A patent/EP1206591A2/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2804132A1 (fr) | 2001-07-27 |
US6334898B1 (en) | 2002-01-01 |
WO2001053572A2 (fr) | 2001-07-26 |
WO2001053572A3 (fr) | 2002-03-07 |
KR20010113749A (ko) | 2001-12-28 |
EP1206591A2 (fr) | 2002-05-22 |
KR100733798B1 (ko) | 2007-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
PLFP | Fee payment |
Year of fee payment: 17 |
|
PLFP | Fee payment |
Year of fee payment: 18 |
|
ST | Notification of lapse |
Effective date: 20181031 |