WO2001053572A3 - Porte-creuset pour le tirage de monocristaux - Google Patents

Porte-creuset pour le tirage de monocristaux Download PDF

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Publication number
WO2001053572A3
WO2001053572A3 PCT/FR2001/000159 FR0100159W WO0153572A3 WO 2001053572 A3 WO2001053572 A3 WO 2001053572A3 FR 0100159 W FR0100159 W FR 0100159W WO 0153572 A3 WO0153572 A3 WO 0153572A3
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
holder
crystal growth
parts
assembled
Prior art date
Application number
PCT/FR2001/000159
Other languages
English (en)
Other versions
WO2001053572A2 (fr
Original Assignee
Lorraine Carbone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0000722A external-priority patent/FR2804131A1/fr
Application filed by Lorraine Carbone filed Critical Lorraine Carbone
Priority to EP01907624A priority Critical patent/EP1206591A2/fr
Publication of WO2001053572A2 publication Critical patent/WO2001053572A2/fr
Publication of WO2001053572A3 publication Critical patent/WO2001053572A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Abstract

Selon l'invention, le porte-creuset en matériau carboné (50), qui est destiné à des operations de tirage de cristaux et qui a la forme d'un récipient creux et comportant une surface intérieure (14) et une surface extérieure (16), comporte au moins deux pièces distinctes et complémentaires pouvant être réunies par des surfaces de jonction (51, 52, 53, ...), et est caractérisé en ce que, lorsque lesdites pièces sont réunies pour former ledit porte-creuset, des portions spécifiques desdites surfaces de jonction se recouvrent de manière à former au moins une zone dite de recouvrement (101, 102, 103, ...) apte à maintenir une surface de contact entre lesdites pièces lorsqu'elles se déplacent les unes par rapport aux autres lors d'une opération de tirage. Le porte-creuset selon l'invention permet de limiter les réactions chimiques entre le creuset et le porte-creuset et de prolonger leur durée de vie.
PCT/FR2001/000159 2000-01-20 2001-01-18 Porte-creuset pour le tirage de monocristaux WO2001053572A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP01907624A EP1206591A2 (fr) 2000-01-20 2001-01-18 Porte-creuset pour le tirage de monocristaux

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR00/00722 2000-01-20
FR0000722A FR2804131A1 (fr) 2000-01-20 2000-01-20 Porte-creuset pour le tirage de monocristaux
FR0002332A FR2804132B1 (fr) 2000-01-20 2000-02-24 Porte-creuset pour le tirage de monocristaux
FR00/02332 2000-02-24

Publications (2)

Publication Number Publication Date
WO2001053572A2 WO2001053572A2 (fr) 2001-07-26
WO2001053572A3 true WO2001053572A3 (fr) 2002-03-07

Family

ID=26212107

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2001/000159 WO2001053572A2 (fr) 2000-01-20 2001-01-18 Porte-creuset pour le tirage de monocristaux

Country Status (5)

Country Link
US (1) US6334898B1 (fr)
EP (1) EP1206591A2 (fr)
KR (1) KR100733798B1 (fr)
FR (1) FR2804132B1 (fr)
WO (1) WO2001053572A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3617466B2 (ja) * 2001-03-16 2005-02-02 三菱住友シリコン株式会社 単結晶引上げ装置
JP5286589B2 (ja) * 2008-05-01 2013-09-11 イビデン株式会社 ルツボ保持部材およびその製造方法
JP5027168B2 (ja) * 2009-01-22 2012-09-19 ジャパンスーパークォーツ株式会社 単結晶引上げ用ルツボ及び単結晶引上げ方法
USD771167S1 (en) 2013-08-21 2016-11-08 A.L.M.T. Corp. Crucible
FR3029214B1 (fr) * 2014-12-02 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Creuset reutilisable pour la fabrication de materiau cristallin.
CN108149315B (zh) * 2018-01-24 2020-10-23 中国科学院上海硅酸盐研究所 晶体生长用坩埚以及释放碳化硅晶体热应力的方法
CN112341232B (zh) * 2020-10-28 2022-04-08 西安超码科技有限公司 一种炭/炭坩埚及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228892A (ja) * 1990-01-31 1991-10-09 Japan Silicon Co Ltd 半導体製造装置
JPH04321584A (ja) * 1991-04-22 1992-11-11 Kawasaki Steel Corp 単結晶引上装置用カーボン坩堝
DE4130253A1 (de) * 1991-09-12 1993-03-18 Ringsdorff Werke Gmbh Mehrteiliger stuetztiegel
DE4325522C1 (de) * 1993-07-30 1994-11-17 Schunk Kohlenstofftechnik Gmbh Tiegel, insbesondere Stütztiegel
JPH06345587A (ja) * 1993-06-08 1994-12-20 Toyo Tanso Kk シリコン単結晶引き上げ装置用黒鉛製ルツボ
JPH11171682A (ja) * 1997-12-05 1999-06-29 Mitsubishi Materials Silicon Corp 単結晶引上装置のカーボンサセプタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USH520H (en) * 1985-12-06 1988-09-06 Technique for increasing oxygen incorporation during silicon czochralski crystal growth
GB2188854A (en) * 1986-04-09 1987-10-14 Philips Electronic Associated Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228892A (ja) * 1990-01-31 1991-10-09 Japan Silicon Co Ltd 半導体製造装置
JPH04321584A (ja) * 1991-04-22 1992-11-11 Kawasaki Steel Corp 単結晶引上装置用カーボン坩堝
DE4130253A1 (de) * 1991-09-12 1993-03-18 Ringsdorff Werke Gmbh Mehrteiliger stuetztiegel
JPH06345587A (ja) * 1993-06-08 1994-12-20 Toyo Tanso Kk シリコン単結晶引き上げ装置用黒鉛製ルツボ
DE4325522C1 (de) * 1993-07-30 1994-11-17 Schunk Kohlenstofftechnik Gmbh Tiegel, insbesondere Stütztiegel
JPH11171682A (ja) * 1997-12-05 1999-06-29 Mitsubishi Materials Silicon Corp 単結晶引上装置のカーボンサセプタ

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 016, no. 001 (C - 0899) 7 January 1992 (1992-01-07) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 158 (C - 1041) 29 March 1993 (1993-03-29) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 03 28 April 1995 (1995-04-28) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30) *

Also Published As

Publication number Publication date
KR20010113749A (ko) 2001-12-28
US6334898B1 (en) 2002-01-01
EP1206591A2 (fr) 2002-05-22
FR2804132A1 (fr) 2001-07-27
WO2001053572A2 (fr) 2001-07-26
FR2804132B1 (fr) 2002-06-07
KR100733798B1 (ko) 2007-07-02

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