ES2033857T3 - Procedimiento de conversion para pasivar trayectos de corriente en cortocircuitos en dispositivos semiconductores, y articulos producidos por este. - Google Patents

Procedimiento de conversion para pasivar trayectos de corriente en cortocircuitos en dispositivos semiconductores, y articulos producidos por este.

Info

Publication number
ES2033857T3
ES2033857T3 ES198787307374T ES87307374T ES2033857T3 ES 2033857 T3 ES2033857 T3 ES 2033857T3 ES 198787307374 T ES198787307374 T ES 198787307374T ES 87307374 T ES87307374 T ES 87307374T ES 2033857 T3 ES2033857 T3 ES 2033857T3
Authority
ES
Spain
Prior art keywords
short circuits
conversion
articles produced
conversion procedure
semiconducting devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198787307374T
Other languages
English (en)
Spanish (es)
Inventor
Prem. Nath
Craig Vogeli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of ES2033857T3 publication Critical patent/ES2033857T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Thermistors And Varistors (AREA)
  • Bipolar Transistors (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electronic Switches (AREA)
ES198787307374T 1986-09-15 1987-08-20 Procedimiento de conversion para pasivar trayectos de corriente en cortocircuitos en dispositivos semiconductores, y articulos producidos por este. Expired - Lifetime ES2033857T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/907,425 US4729970A (en) 1986-09-15 1986-09-15 Conversion process for passivating short circuit current paths in semiconductor devices

Publications (1)

Publication Number Publication Date
ES2033857T3 true ES2033857T3 (es) 1993-04-01

Family

ID=25424075

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198787307374T Expired - Lifetime ES2033857T3 (es) 1986-09-15 1987-08-20 Procedimiento de conversion para pasivar trayectos de corriente en cortocircuitos en dispositivos semiconductores, y articulos producidos por este.

Country Status (8)

Country Link
US (1) US4729970A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0260821B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2674622B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE78365T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1264869A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3780386T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES2033857T3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN171365B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US5055416A (en) * 1988-12-07 1991-10-08 Minnesota Mining And Manufacturing Company Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces
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US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
US5268039A (en) * 1991-09-13 1993-12-07 United Solar Systems Corporation Photovoltaic device including shunt preventing layer and method for the deposition thereof
EP0603260A4 (en) * 1991-09-13 1994-07-27 United Solar Systems Corp Photovoltaic device including shunt preventing layer and method for the deposition thereof.
JP2686022B2 (ja) * 1992-07-01 1997-12-08 キヤノン株式会社 光起電力素子の製造方法
JP2915321B2 (ja) * 1995-05-16 1999-07-05 キヤノン株式会社 直列接続光起電力素子アレーの製造方法
JP3387741B2 (ja) * 1995-07-19 2003-03-17 キヤノン株式会社 半導体素子用保護材、該保護材を有する半導体素子、該素子を有する半導体装置
US5769963A (en) * 1995-08-31 1998-06-23 Canon Kabushiki Kaisha Photovoltaic device
CN1235271C (zh) * 1995-10-17 2006-01-04 佳能株式会社 生产半导体器件的工艺
JPH09115978A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体装置の評価方法
DE69722976T2 (de) 1996-01-10 2004-05-13 Canon K.K. Solarzellenmodul mit einer spezifischen Abdeckung der zeitlichen Oberflächen, die einen ausgezeichneten Widerstand gegen Feuchtigkeit sowie eine ausgezeichnete Durchsichtigkeit aufweist
US5859397A (en) * 1996-05-17 1999-01-12 Canon Kabushiki Kaisha Process for the production of a photovoltaic element
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US6430810B1 (en) 1997-10-28 2002-08-13 Uniax Corporation Mechanical scribing methods of forming a patterned metal layer in an electronic device
AU743134B2 (en) 1997-12-03 2002-01-17 Canon Kabushiki Kaisha Method of producing photovoltaic element
US6414236B1 (en) 1999-06-30 2002-07-02 Canon Kabushiki Kaisha Solar cell module
US6882045B2 (en) * 1999-10-28 2005-04-19 Thomas J. Massingill Multi-chip module and method for forming and method for deplating defective capacitors
WO2004050961A1 (en) * 2002-11-27 2004-06-17 University Of Toledo, The Integrated photoelectrochemical cell and system having a liquid electrolyte
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
US7317566B2 (en) * 2005-08-29 2008-01-08 Teledyne Licensing, Llc Electrode with transparent series resistance for uniform switching of optical modulation devices
US7256140B2 (en) * 2005-09-20 2007-08-14 United Solar Ovonic Llc Higher selectivity, method for passivating short circuit current paths in semiconductor devices
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
JP5135904B2 (ja) * 2007-06-19 2013-02-06 株式会社日立製作所 有機薄膜トランジスタアレイおよびその製造方法
US20100304512A1 (en) * 2007-11-30 2010-12-02 University Of Toledo System for Diagnosis and Treatment of Photovoltaic and Other Semiconductor Devices
US8574944B2 (en) * 2008-03-28 2013-11-05 The University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
EP2159583A1 (en) * 2008-08-29 2010-03-03 ODERSUN Aktiengesellschaft System and method for localizing and passivating defects in a photovoltaic element
DE102008043720A1 (de) 2008-11-13 2010-05-20 Evonik Röhm Gmbh Formmassen zur Herstellung von Solarzellenmodulen
DE102008043707A1 (de) 2008-11-13 2010-05-20 Evonik Röhm Gmbh Herstellung von Solarzellenmodulen
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US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
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EP2577736A2 (en) 2010-05-26 2013-04-10 The University of Toledo Photovoltaic structures having a light scattering interface layer and methods of making the same
US9214576B2 (en) * 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
DE102010030508A1 (de) 2010-06-25 2011-12-29 Evonik Röhm Gmbh Herstellung von Solarzellenmodulen
CN103180962B (zh) * 2010-08-13 2016-05-11 第一太阳能有限公司 具有氧化物层的光伏装置
KR101283113B1 (ko) * 2011-12-09 2013-07-05 엘지이노텍 주식회사 태양전지 모듈 및 이의 제조방법
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
FR3037723B1 (fr) * 2015-06-16 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un empilement du type premiere electrode / couche active / deuxieme electrode.
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
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US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
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Also Published As

Publication number Publication date
EP0260821A3 (en) 1988-11-02
DE3780386D1 (de) 1992-08-20
JP2674622B2 (ja) 1997-11-12
CA1264869A (en) 1990-01-23
IN171365B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-09-26
EP0260821B1 (en) 1992-07-15
EP0260821A2 (en) 1988-03-23
US4729970A (en) 1988-03-08
DE3780386T2 (de) 1993-01-28
ATE78365T1 (de) 1992-08-15
JPS6376442A (ja) 1988-04-06

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