EP4161940A1 - Silylierte oligogermane und polycyclische silicium-germanium-verbindungen, verfahren zur herstellung derselben sowie die verwendung derselben zum herstellen eines si- und ge-enthaltenden festkörpers - Google Patents

Silylierte oligogermane und polycyclische silicium-germanium-verbindungen, verfahren zur herstellung derselben sowie die verwendung derselben zum herstellen eines si- und ge-enthaltenden festkörpers

Info

Publication number
EP4161940A1
EP4161940A1 EP21739017.8A EP21739017A EP4161940A1 EP 4161940 A1 EP4161940 A1 EP 4161940A1 EP 21739017 A EP21739017 A EP 21739017A EP 4161940 A1 EP4161940 A1 EP 4161940A1
Authority
EP
European Patent Office
Prior art keywords
compound
formula
alkyl
group
nmr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21739017.8A
Other languages
German (de)
English (en)
French (fr)
Inventor
Matthias Wagner
Benedikt KÖSTLER
Hans-Wolfram Lerner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Goethe Universitaet Frankfurt am Main
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102020114994.8A external-priority patent/DE102020114994A1/de
Application filed by Goethe Universitaet Frankfurt am Main filed Critical Goethe Universitaet Frankfurt am Main
Publication of EP4161940A1 publication Critical patent/EP4161940A1/de
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/30Germanium compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Definitions

  • the present invention relates to silylated oligogermanium and polycyclic silicon-germanium compounds, a method for producing the same and the use of the same for producing a solid containing Si and Ge.
  • Halosilanes, polyhalosilanes, Halogengermane, Polyhalogengermane, Silane, Polysilane, German, Polygermane and corresponding mixed compounds have long been known, cf., in addition to the current textbooks on inorganic chemistry, also WO 2004/036631 A2 or C. J. Ritter et ab, J. Am. Chem. Soc., 2005, 127, 9855-9864.
  • Triphenylgermylsilane and its preparation is described in EP 3409645 Ai.
  • the object of the present invention is to overcome the disadvantages of the prior art, in particular to produce storable, tailor-made silicon-germanium compounds which are suitable for the production of Si / Ge solids.
  • R 1 and R 2 independently of one another from the group consisting of C 1 to C 20 alkyl, C 2 to C 20 alkenyl, C 2 to C 20 alkynyl, C 3 to C 20 cycloalkyl, Cc, to C 20 aryl, C 7 to C 20 arylalkyl and C 7 to C 20 alkylaryl; and
  • - E 1 to E 6 are, independently of one another, Si or Ge;
  • - X 11 to X 14 are independently selected from the group consisting of H, SiH 3 , halogen and Si (Y 2 ) 3 ;
  • - Y 2 is independently selected from C 1 to C 20 alkyl and halogen
  • R 3 to R 14 independently of one another from the group consisting of C 1 to C 20 alkyl, C 2 to C 20 alkenyl, C 2 to C 20 alkynyl, C 3 to C 20 cycloalkyl, Cc, to C 20 aryl, C 7 to C 20 arylalkyl, C 7 to C 20 alkylaryl, and Z; and
  • - Z is independently selected from the group consisting of H, halogen and C 1 to C 20 alkyl.
  • n is an integer from 1 to 8. It can also be provided that n is an integer from 1 to 6. It can also be provided that n one is an integer from 1 to 4. It can also be provided that n is an integer from 2 to 10. It can also be provided that n is an integer from 2 to 8. It can also be provided that n is an integer from 2 to 6. It can also be provided that n is an integer from 2 to 5. Finally, it can be provided that n is an integer from 2 to 4.
  • R 1 and R 2 independently of one another from the group consisting of C 1 to C 12 alkyl, C 2 to C 1 alkenyl, C 2 to C 12 alkynyl, C 3 to C 12 cycloalkyl, C 6 , to C 12 aryl, C 7 to C 13 arylalkyl and C 7 to C 13 alkylaryl.
  • R 1 and R 2 are independently selected from the group consisting of C 1 to C 12 alkyl, Cc to C 12 aryl, C 7 to C 13 arylalkyl and C 7 to C 13 alkylaryl.
  • R 1 and R 2 are selected independently of one another from the group consisting of C 1 to C 20 alkyl and Cc to C 20 aryl.
  • R 1 and R 2 are selected independently of one another from the group consisting of C 1 to C 12 alkyl and C 6 to C 12 aryl.
  • R 1 and R 2 are, independently of one another, phenyl or methyl.
  • R 1 and R 2 are the same. In this context it can be provided that all R 1 and R 2 contained in the compound of the formula (Ia) are identical and are selected from one of the groups mentioned above.
  • X 1 is selected from the group consisting of H, SiH 3 , Cl and SiCl 3 .
  • E 1 to E 6 Ge is from E 1 to E 6 Ge and the rest are from E 1 to E 6 Si. It can be provided that four, five or six from E 1 to E 6 are Ge and the remaining one (s) from E 1 to E 6 are / is Si. Provision can be made for four or five of E 1 to E 6 to be Ge and the remaining (s) of E 1 to E 6 to be Si.
  • R 3 to R 14 are independently selected from the group consisting of C 1 to C 12 alkyl, C 2 to C 12 alkenyl, C 2 to C 12 alkynyl, C 3 to C 12 cycloalkyl, Cc, bis C 12 aryl, C 7 to C 13 arylalkyl, C 7 to C 13 alkylaryl, and halogen.
  • R 3 to R 14 independently of one another from the group consisting of C 1 to C 12 alkyl, C 6 to C 12 aryl, C 7 to C 13 arylalkyl, C 7 to C 13 alkylaryl, and halogen, are selected.
  • R 3 to R 14 are independently selected from the group consisting of C 1 to C 20 alkyl, C 6 to C 20 aryl and halogen. It can be provided that R 3 to R 14 are independently selected from the group consisting of C 1 to C 12 alkyl and halogen.
  • R 3 to R 14 are, independently of one another, Cl or methyl.
  • R n which are directly connected to the same E m (that is, the two R in the pairs R 3 and R 4 , R 5 and R 6 , R 7 and R 8 , R 9 and R 10 , R 11 and R 12 , as well as R 13 and R 14) , are the same.
  • the two R n which are directly connected to the E m are C 1 to C 20 alkyl . It can be provided that in the event that the E m (that is, one of E 1 to E 6 ) is Ge, the two R n which are directly connected to the E m are C 1 to C 12 alkyl . It can be provided that in the event that the E m (that is to say one of E 1 to E 6 ) is Ge, the two R n which are directly connected to the E m are C 1 to Cs alkyl.
  • the two R n which are directly connected to the E m are C 1 to C 4 alkyl . It can be provided that in the event that the E m (that is to say one of E 1 to E 6 ) is Ge, the two R n which are directly connected to the E m are methyl.
  • the E m that is to say one of E 1 to E 6
  • the two R n which are directly connected to the E m are halogen.
  • the E m that is to say one of E 1 to E 6
  • the two R n that are directly connected to the E m are CI.
  • X 11 to X 14 are selected independently from the group consisting of H, SiH 3 , Si (C 1 to C 20 alkyl) 3 , Cl and SiCl 3 . It can be provided that X 11 to X 14 are selected independently from the group consisting of H, SiH 3 , Si (C 1 to C 12 alkyl) 3 , Cl and SiCl 3 . It can be provided that X 11 to X 14 are selected independently from the group consisting of H, SiH 3 , Si (C 1 to Cs alkyl) 3 , CI and SiCl 3 .
  • X 11 to X 14 are selected independently from the group consisting of H, SiH 3 , Si (C 1 to C 4 alkyl) 3 , CI and SiCl 3 . It can be provided that X 11 to X 14 are independently selected from the group consisting of Si (C 1 to C 4 alkyl) 3 and SiCl 3 .
  • the compound of the formula (Ib) is selected from one of the following compounds C 1 to C4.
  • the object is further achieved by a process for preparing a compound of the formula (Ia) according to one of the preceding claims comprising the reaction of a compound of the formula (Ia) with a compound of the formula (IIIa) where X 3 to X 10 are independently halogen; and R 1 and R 2 are as defined above; and hydrogenating the product obtained by reacting the compound of the formula (Ha) with the compound of the formula (purple).
  • the ratio of compound (Ha) to compound (purple) can be from 10: 1 to 1:20; 5: 1 to 1: 1; 2: 1 to 1:10; 1.5: 1 to 1: 8; 1.2: 1 to 1: 5; 1: 1 to 1: 4.
  • the reaction of the compound of the formula (Ha) with the compound of the formula (lilac) takes place in the presence of a catalyst.
  • the catalyst is used in amounts from 0.001 to 1 eq., Preferably from 0.01 to 0.1 eq. to use.
  • the catalyst is a base.
  • the catalyst is a phosphorus- or nitrogen-containing base.
  • the catalyst is a nitrogen-containing base.
  • the catalyst is a phosphonium or ammonium salt.
  • the catalyst is selected from [(R ') 4 P] C1 or [(R ' ) 4 N] C1, where the radicals R 'independently of one another are C 1 to C 12 alkyl, C 6 to C 12 Aryl, C 7 to C 13 arylalkyl and C 7 to C 13 alkylaryl. It can be provided that the catalyst is [(R ' ) 4 N] Cl, where R' is selected from methyl, ethyl, iso-propyl, n-butyl and phenyl. It can be provided that the catalyst is [(R ') 4 N] Cl, where R' is selected n-butyl.
  • the reaction of the compound of the formula (Ha) with the compound of the formula (lilac) takes place in a solvent.
  • a solvent In the process, at least 5 mol of solvent per mole of compound (purple), alternatively from 10 mol to 100 mol of solvent per mole of compound (purple) can be used.
  • the solvent is an organic solvent.
  • the solvent both in the reacting step and in the hydrogenation step is a non-polar organic solvent.
  • the solvent is selected from n-pentane, n-hexane, n-heptane, cyclohexane, toluene, diethyl ether, dichloromethane, chloroform, tert-butyl methyl ether, acetone and tetrahydrofuran. It can be provided that the solvent is dichloromethane.
  • reaction of the compound of the formula (Ha) with the compound of the formula (lilac) at a temperature in a range from o.degree. C. to 50.degree. C., 10.degree. C. to 40.degree. C., 15.degree up to 30 ° C, 20 ° C to 25 ° C, or 22 ° C ( room temperature).
  • reaction of the compound of the formula (Ha) with the compound of the formula (lilac) takes place for 5 minutes to 24 hours, 30 minutes to 12 hours, or 1 hour to 4 hours.
  • hydrogenation of the product which is obtained by reacting the compound of the formula (Ha) with the compound of the formula (purple) is carried out by adding a hydrogenating agent.
  • the hydrogenating agent is lithium aluminum hydride.
  • the molar ratio of compound (IIb) to compound (IIIb) can be from 10: 1 to 1:40; 5: 1 to 1: 2; 2: 1 to 1:20; 1.5: 1 to 1:10; 1.2: 1 to 1: 8; 1: 3 to 1: 5, roughly 1: 4.
  • the reaction of the compound of the formula (IIb) with the compound of the formula (IIIb) takes place in the presence of a catalyst.
  • the catalyst is used in amounts from 0.001 to 1 eq., Preferably from 0.01 to 0.1 eq. to use.
  • the catalyst is a base.
  • the catalyst is a phosphorus- or nitrogen-containing base.
  • the catalyst is a nitrogen-containing base.
  • the catalyst is a phosphonium or ammonium salt.
  • the catalyst is selected from [(R 3 ) 4 P] C1 or [(R 3 ) 4 N] C1, where the radicals R 3, independently of one another, are C 1 to C 12 alkyl, C 6 to C 12 Aryl, C 7 to C 13 arylalkyl and C 7 to C 13 alkylaryl, are selected. It can be provided that the catalyst is [(R3) 4 N] C1, where R 3 is selected from methyl, ethyl, iso-propyl, n-butyl and phenyl. It can be provided that the catalyst is [(R 3 ) 4 N] C1, where R 3 is selected n-butyl.
  • the reaction of the compound of the formula (IIb) with the compound of the formula (Mb) takes place in a solvent.
  • a solvent In the process, at least 5 mol of solvent per mole of compound (IIIb), alternatively from 10 mol to 100 mol of solvent per mole of compound (IIIb) can be used.
  • the solvent is an organic solvent.
  • the solvent (both in the reacting step and in the hydrogenation step) is a non-polar organic solvent.
  • the solvent is selected from n-pentane, n-hexane, n-heptane, cyclohexane, toluene, diethyl ether, dichloromethane, chloroform, tert-butyl methyl ether, acetone and tetrahydrofuran. It can be provided that the solvent is dichloromethane.
  • reaction of the compound of the formula (IIb) with the compound of the formula (IIIb) takes place for 5 minutes to 24 hours, 30 minutes to 12 hours, or 1 hour to 4 hours.
  • the method further comprises reacting the product obtained after crystallization with a Grignard reagent.
  • Such a compound can be prepared by reacting acyl halide with magnesium in a suitable organic solvent.
  • Suitable organic solvents are those which, through a free electron pair, can form a coordinative bond to the Mg in the R-Mg-Hal.
  • An ether preferably a dialkyl ether such as diethyl ether or a cyclic ether such as tetrahydrofuran (THF)
  • THF tetrahydrofuran
  • the object is also achieved by the use of a compound of the formula (Ia) or the formula (Ib) described above for producing a solid containing Si and Ge.
  • the solid containing Si and Ge is an intermetallic phase, the two semimetals Si and Ge in this context being regarded as metals.
  • An intermetallic phase (also intermetallic compound) is a chemical compound made up of two or more metals. In contrast to alloys, the intermetallic phase shows lattice structures that differ from those of the constituent metals.
  • the lattice bond of the different types of atoms is a hybrid of a predominantly metallic bond and smaller proportions of other types of bond (covalent bond, ionic bond), which means that these phases have special physical and mechanical properties.
  • the production of the solid containing Si and Ge comprises heating the compound to a temperature of 300 ° C. or more. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of 400 ° C. or more. It can be provided that the production of the solid body containing Si and Ge comprises heating the compound to a temperature of 450 ° C. or more. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of 500 ° C. or more. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of 550 ° C. or more. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of 600 ° C.
  • the production of the solid containing Si and Ge includes heating the compound to a temperature of 400.degree. C. to 100.degree. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of 400.degree. C. to 800.degree. Provision can be made for the production of the solid containing Si and Ge to include heating the compound to a temperature of 450.degree. C. to 750.degree. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of 500.degree. C. to 700.degree. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of 550.degree. C. to 050.degree. It can be provided that the production of the solid containing Si and Ge comprises heating the compound to a temperature of approximately 600.degree.
  • the production of the solid containing Si and Ge includes the deposition of SiGe. It can be provided that the production of the solid containing Si and Ge includes the simultaneous deposition of Si and Ge. It can be provided that the stoichiometric ratio of Si to Ge in the solid containing Si and Ge corresponds to the stoichiometric ratio of Si to Ge in the compound corresponds to formula (Ia) or formula (Ib). It can be provided that the stoichiometric ratio of Si to Ge in the solid containing Si and Ge corresponds to the stoichiometric ratio of Si to Ge in the compound of formula (Ia) or of formula (Ib) with a deviation of ⁇ 10% is equivalent to.
  • the solid containing Si and Ge contains further elements in an amount of 10% by weight or less, based on the total weight of the solid containing Si and Ge. It can be provided that the solid containing Si and Ge contains further elements in an amount of 5% by weight or less, based on the total weight of the solid containing Si and Ge. It can be provided that the solid containing Si and Ge contains further elements in an amount of 3% by weight or less, based on the total weight of the solid containing Si and Ge. It can be provided that the solid containing Si and Ge contains further elements in an amount of 2% by weight or less, based on the total weight of the solid containing Si and Ge.
  • the solid containing Si and Ge contains further elements in an amount of 1% by weight or less, based on the total weight of the solid containing Si and Ge. It can be provided that the solid containing Si and Ge contains further elements in an amount of 0.5% by weight or less, based on the total weight of the solid containing Si and Ge. It can be provided that the solid containing Si and Ge contains further elements in an amount of 0.1% by weight or less, based on the total weight of the solid containing Si and Ge. It can be provided that the solid containing Si and Ge contains further elements in an amount of 0.01% by weight or less, based on the total weight of the solid containing Si and Ge. It can be provided that the solid containing Si and Ge contains further elements in an amount of 0.001% by weight or less, based on the total weight of the solid containing Si and Ge.
  • alkyl refers to a monoradical of a saturated chain or branched hydrocarbon.
  • the alkyl group comprises 1 to 12 (about 1 to 10) carbon atoms; H. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12 carbon atoms, preferably 1 to 8 carbon atoms, alternatively 1 to 6 or 1 to 4 carbon atoms.
  • alkyl groups are methyl, ethyl, propyl, iso-propyl, butyl, iso-butyl, tert-butyl, n-pentyl, iso-pentyl, sec-pentyl, neo-pentyl, 1,2-dimethylpropyl, iso-amyl, n -Hexyl, iso-hexyl, sec-hexyl, n-heptyl, iso-heptyl, n-octyl, 2-ethylhexyl, n-nonyl, n-decyl, n-undecyl or n-dodecyl.
  • alkenyl refers to the monoradical of a saturated chain or branched hydrocarbon with at least one double bond.
  • alkynyl refers to the monoradical of a saturated chain or branched hydrocarbon with at least one triple bond.
  • aryl refers to the monoradical of an aromatic cyclic hydrocarbon.
  • exemplary aryl groups include cyclopentadienyl, phenyl, indenyl, naphthyl, azulenyl, fluorenyl, anthryl, and phenanthryl.
  • cycloalkyl refers to the cyclic, non-aromatic form of an alkyl.
  • arylalkyl refers to an aryl group that is substituted with at least one alkyl, for example toluolyl.
  • alkylaryl refers to an alkyl group that is substituted with at least one aryl, for example 2-phenylethyl.
  • halogen refers to fluorine, chlorine, bromine or iodine.
  • Fig. 1 shows the crystal structure of the compound Ay.
  • Fig. 2 shows the crystal structure of the compound A8.
  • the present invention relates to the novel silylated oligogerman of the formula (Ia)
  • the present invention also relates to the novel polycyclic silicon-germanium compounds of the formula (Ib)
  • Target compounds of the formula (Ia) are accessible via a novel synthesis, for example starting from diorganyldichlorogerman and hexachlorodisilane.
  • the target compounds (Ia) can be prepared, for example, by adding tetrabutylammonium chloride and subsequent hydrogenation with lithium aluminum hydride.
  • These oligogerman are characterized by their thermolysis behavior, for example when separating pure Si and Ge, the residue obtained in this way consisting of pure Si and Ge in a stoichiometric ratio.
  • Target compounds (Ib) are accessible via a novel synthesis, for example starting from diorganyldichlorogerman and hexachlorodisilane.
  • the target compounds (Ib) can be prepared, for example, by adding tetrabutylammonium chloride and optionally subsequent reaction with a Grignard reagent.
  • These polycyclic silicon-germanium compounds are characterized by their thermolysis behavior, for example during the deposition of pure Si and Ge, the residue obtained in this way consisting of pure Si and Ge in a stoichiometric ratio.
  • Particularly preferred compounds which can be prepared in this way are the following compounds A 1 to A8
  • H 3 Si-Ph 2 Ge-Ph 2 Ge SiH 3 (55%, 128 mg, 0.44 mmol) as a colorless, crystalline solid.
  • the 13 C and 29 Si NMR spectroscopic examination of the solid obtained confirmed the presence of the educt Cl 3 Si-Ph 2 Ge-Ph 2 Ge-SiCl 3 , H 3 Si-Ph 2 Ge-Ph 2 Ge-SiCl 3 and H 3 Si-Ph 2 Ge-Ph 2 Ge-SiH 3 .
  • the crystal structure of H 3 Si-Ph 2 Ge-Ph 2 Ge-SiCl 3 could also be obtained by means of X-ray diffractometry.
  • NMR tube was filled with [nBu 4 N] Cl (10 mg, 0.03 mmol, 0.2 eq.), Ph 2 GeCl 2 (50 mg, 0.17 mmol, 1 eq.), 0.5 mL CD 2 C1 2 and Si 2 Cl 6 (90 mg, 0.34 mmol, 2 eq.).
  • the 13 C and 29 Si NMR spectroscopic examination of the clear, colorless solution confirmed the presence of Cl 3 Si-Ph 2 Ge-Ph 2 Ge-SiCl 3 , Cl 3 Si-Ph 2 Ge-SiCl 3 and SiCl 4 .
  • the NMR tube was opened and all volatile constituents were removed under ambient pressure.
  • Solids containing Si and Ge can be prepared starting from the compounds according to the invention, for example according to the following reaction scheme.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
EP21739017.8A 2020-06-05 2021-06-01 Silylierte oligogermane und polycyclische silicium-germanium-verbindungen, verfahren zur herstellung derselben sowie die verwendung derselben zum herstellen eines si- und ge-enthaltenden festkörpers Pending EP4161940A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102020114994.8A DE102020114994A1 (de) 2020-06-05 2020-06-05 Silylierte Oligogermane, Verfahren zur Herstellung derselben sowie die Verwendung derselben zum Herstellen eines Si- und Ge-enthaltenden Festkörpers
DE102020131425 2020-11-27
PCT/DE2021/100470 WO2021244705A1 (de) 2020-06-05 2021-06-01 Silylierte oligogermane und polycyclische silicium-germanium-verbindungen, verfahren zur herstellung derselben sowie die verwendung derselben zum herstellen eines si- und ge-enthaltenden festkörpers

Publications (1)

Publication Number Publication Date
EP4161940A1 true EP4161940A1 (de) 2023-04-12

Family

ID=76807452

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21739017.8A Pending EP4161940A1 (de) 2020-06-05 2021-06-01 Silylierte oligogermane und polycyclische silicium-germanium-verbindungen, verfahren zur herstellung derselben sowie die verwendung derselben zum herstellen eines si- und ge-enthaltenden festkörpers

Country Status (6)

Country Link
US (1) US20230219982A1 (zh)
EP (1) EP4161940A1 (zh)
JP (1) JP2023529170A (zh)
KR (1) KR20230021025A (zh)
CN (1) CN116194615A (zh)
WO (1) WO2021244705A1 (zh)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
EP3409645B1 (de) 2017-06-01 2019-10-02 Evonik Degussa GmbH Triphenylgermylsilan und trichlorsilyl-trichlorgerman für die erzeugung von germanium-silizium-schichten sowie verfahren zu deren herstellung aus trichlorsilyl-triphenylgerman
EP3410466B1 (de) 2017-06-01 2020-02-26 Evonik Operations GmbH Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung

Also Published As

Publication number Publication date
CN116194615A (zh) 2023-05-30
US20230219982A1 (en) 2023-07-13
JP2023529170A (ja) 2023-07-07
WO2021244705A1 (de) 2021-12-09
KR20230021025A (ko) 2023-02-13

Similar Documents

Publication Publication Date Title
EP0773224B1 (de) Verfahren zur selektiven Synthese von Silylalkyldisulfiden
DE102009053804B3 (de) Verfahren zur Herstellung von Hydridosilanen
EP3410466B1 (de) Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung
EP3409645B1 (de) Triphenylgermylsilan und trichlorsilyl-trichlorgerman für die erzeugung von germanium-silizium-schichten sowie verfahren zu deren herstellung aus trichlorsilyl-triphenylgerman
DE112011104615B4 (de) Organoborverbindung und Verfahren zum Herstellen derselben
DE112014005811B4 (de) Neutraler Komplex eines cyclischen Silans, Herstellungsverfahren dafür und Verfahren zur Herstellung eines cyclischen hydrierten Silans oder eines cyclischen organischen Silans
EP3409678B1 (de) Neue halogengermanide und verfahren zu deren herstellung
EP0644888B1 (de) Sulfoniumsalze und verfahren zu deren herstellung
EP3653578B1 (de) Tetrakis(trichlorsilyl) german, verfahren zu dessen herstellung
EP4161940A1 (de) Silylierte oligogermane und polycyclische silicium-germanium-verbindungen, verfahren zur herstellung derselben sowie die verwendung derselben zum herstellen eines si- und ge-enthaltenden festkörpers
EP3345866B1 (de) Verfahren zum herstellen einer cyclischen silanverbindung
DE102020114994A1 (de) Silylierte Oligogermane, Verfahren zur Herstellung derselben sowie die Verwendung derselben zum Herstellen eines Si- und Ge-enthaltenden Festkörpers
WO2022111758A1 (de) Polycyclische silicium-germanium-verbindungen, verfahren zur herstellung derselben sowie die verwendung derselben zum herstellen eines si- und ge-enthaltenden festkörpers
EP3653577B1 (de) Tris(trichlorsilyl)dichlorogallylgerman, verfahren zu dessen herstellung und dessen verwendung
EP0937732B1 (de) Verfahren zur Reduzierung der Sulfankettenlänge von Bis(silylorganyl)polysulfanen
DE102013021306A1 (de) Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen
WO2017194100A1 (de) Kationische silicium(ii)-verbindungen und verfahren zu ihrer herstellung
WO2017167715A1 (de) Gezielte herstellung von 2,2,3,3-tetrasilyltetrasilan
EP3609901B1 (de) Verfahren zur herstellung kationischer silicium(ii)-verbindungen
DE102015105690B4 (de) Verfahren zum Herstellen einer cyclischen Silanverbindung
DE1643905B2 (de) Verfahren zur herstellung von organolithium- oder organomagnesiumaminosiliciumverbindungen
DE1768428B2 (de) Verfahren zur herstellung von organosiliciumhydriden
DE102013205947A1 (de) Niedermolekulargewichtige Carbosilane, Vorläufer davon, und Verfahren zur Herstellung
WO2006061102A1 (de) Verfahren zur herstellung von organosilanen

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20221205

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: LERNER, HANS-WOLFRAM

Inventor name: KOESTLER, BENEDIKT

Inventor name: WAGNER, MATTHIAS

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20230928

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: EVONIK OPERATIONS GMBH