EP3969642A1 - Dépôt à taux de croissance élevé pour matériaux du groupe iii/v - Google Patents

Dépôt à taux de croissance élevé pour matériaux du groupe iii/v

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Publication number
EP3969642A1
EP3969642A1 EP20804988.2A EP20804988A EP3969642A1 EP 3969642 A1 EP3969642 A1 EP 3969642A1 EP 20804988 A EP20804988 A EP 20804988A EP 3969642 A1 EP3969642 A1 EP 3969642A1
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EP
European Patent Office
Prior art keywords
deposition
layer
ingap
type
over
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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EP20804988.2A
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German (de)
English (en)
Other versions
EP3969642A4 (fr
Inventor
Nikhil Jain
Jason M. Jewell
Chaowei Wang
Ji Wu
Emmett Edward Perl
Claudio Andres CANIZARES
Ling Zhang
Brendan M. Kayes
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Utica Leaseco LLC
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Utica Leaseco LLC
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Publication date
Priority claimed from US16/412,328 external-priority patent/US20190272994A1/en
Application filed by Utica Leaseco LLC filed Critical Utica Leaseco LLC
Publication of EP3969642A1 publication Critical patent/EP3969642A1/fr
Publication of EP3969642A4 publication Critical patent/EP3969642A4/fr
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type

Definitions

  • Implementations of the disclosure generally relate to processes for depositing materials for solar, semiconductor, or other electronic device applications, and more particularly to epitaxial growth of Group lll/V materials.
  • Group lll/V materials such as gallium arsenide or gallium aluminum arsine, may be deposited or formed by epitaxial growth during a chemical vapor deposition (CVD) process.
  • CVD chemical vapor deposition
  • a typical CVD process may epitaxially grow a Group lll/V material at a deposition rate within a range from about 1 mm/hr to about 3 mm/hr. The quality of the epitaxial material is generally greatly reduced by slightly increasing the deposition rate.
  • a Group lll/V material grown at a deposition rate of about 5 mm/hr is of low quality and often has structural defects within the crystalline lattice and/or contains amorphous material. [0005] Therefore, there is a need for a deposition process for depositing high quality, epitaxial Group lll/V materials at high growth rates (e.g., at least greater than 5 mm/hr).
  • Implementations of the disclosure generally relate processes for epitaxial growing Group lll/V materials at high growth rates or deposition rates, such as about 30 mm/hr or greater, for example, about 40 mm/hr, about 50 mm/hr, about 55 mm/hr, about 60 mm/hr, about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the term“greater” in connection with growth or deposition rates may refer to higher deposition rates including those described within the context of this disclosure.
  • the term“about” may indicate an approximate value that can be within ⁇ 1 %, ⁇ 2%, ⁇ 3%, ⁇ 5%, ⁇ 10%, ⁇ 15%, or ⁇ 20% of a nominal value.
  • the range 90-120 mm/hr can indicate one or more different growth or deposition rates, including about 90 mm/hr, about 95 mm/hr, about 100 mm/hr, about 105 mm/hr, about 1 10 mm/hr, about 1 15 mm/hr, or about 120 mm/hr.
  • the deposited Group lll/V materials or films may be utilized in solar, semiconductor, or other electronic device applications.
  • the Group lll/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group lll/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process.
  • the Group lll/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.
  • the Group lll/V materials can also be referred to as Group lll/V semiconductors or Group lll/V semiconductor materials.
  • a method for forming a Group lll/V material containing gallium arsenide on a wafer includes heating the wafer to a deposition temperature of about 600°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas and arsine, and depositing a gallium arsenide layer on the wafer at a deposition rate of about 30 mm/hr or greater.
  • the term“30 mm/hr or greater” can refer to, for example, growth or deposition rates of about 40 mm/hr, about 50 mm/hr, about 55 mm/hr, about 60 mm/hr, about 70 mm/hr, about 80 mm/hr, or about 90-120 miti/hr.
  • the term “greater” in connection with deposition temperatures may refer to higher temperatures including those described within the context of this disclosure.
  • the wafer is heated to a deposition temperature of about 650°C or greater within a processing system, and exposed to a deposition gas containing a gallium precursor gas, an aluminum precursor gas, and arsine.
  • a Group lll/V material containing a gallium aluminum arsenide layer is grown at a deposition rate of about 30 mm/hr or greater.
  • the range of the deposition temperature can be between about 680°C and about 850°C.
  • a method includes heating the wafer to a deposition temperature of about 600°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas, an indium precursor gas, and arsine, and depositing a Group lll/V layer or material on the wafer at a deposition rate of about 30 mm/hr or greater (e.g., 90-120 mm/hr deposition rates).
  • the Group lll/V layer or material contains gallium, arsenic, and indium.
  • the deposition temperature is within a range from about 650°C to about 800°C.
  • the gallium precursor gas contains trimethylgallium and the indium precursor gas contains trimethylindium.
  • the range of the deposition temperature can be between about 680°C and about 850°C.
  • the deposition rate or growth rate may be about 40 mm/hr or greater, such as about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater (e.g., 90-120 mm/hr deposition rates).
  • the deposition temperature may be about 600°C or greater, or may be about 700°C or greater, or may be about 800°C or greater, or may be about 850°C. In some examples, the deposition temperature may be within a range from about 550°C to about 900°C. In other examples, the deposition temperature may be within a range from about 600°C to about 800°C.
  • the deposition temperature may be within a range from about 650°C to about 750°C. In other examples, the deposition temperature may be within a range from about 650°C to about 720°C. For the 90-120 mm/hr deposition rates, the range of the deposition temperature can be between about 680°C and about 850°C.
  • a method includes heating the wafer to a deposition temperature of about 600°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas, an indium precursor gas, a nitrogen precursor gas, and arsine, depositing a Group lll/V layer or material on the wafer at a deposition rate of about 30 mm/hr or greater (e.g., 90-120 mm/hr deposition rates), wherein the Group lll/V layer or material contains gallium, arsenic, indium, and nitrogen.
  • the nitrogen precursor gas may contain hydrazine, methylhydrazine, dimethylhydrazine, derivatives thereof, or combinations thereof.
  • the nitrogen precursor gas contains dimethylhydrazine. In another example, the nitrogen precursor gas contains hydrazine. In some examples, the gallium precursor gas contains trimethylgallium and the indium precursor gas contains trimethylindium.
  • the range of the deposition temperature can be between about 680°C and about 850°C.
  • a method includes heating the wafer to a deposition temperature of about 600°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas, an indium precursor gas, an aluminum precursor, and a phosphorus precursor, depositing a Group lll/V layer or material on the wafer at a deposition rate of about 30 mm/hr or greater (e.g., 90-120 mm/hr deposition rates), wherein the Group lll/V layer or material contains gallium, indium, aluminum, and phosphorus.
  • the gallium precursor contains trimethylgallium
  • the aluminum precursor contains trimethylaluminum
  • the indium precursor contains trimethylindium
  • the phosphorus precursor contains phosphine.
  • the range of the deposition temperature can be between about 680°C and about 850°C.
  • Figure 1 illustrates an example of a gallium arsenide stack containing a variety of Group lll/V layers, as described by some implementations herein.
  • Figure 2 illustrates an example of a method for forming a semiconductor material on a wafer, as described in some implementations herein.
  • Figure 3 illustrates an example of another method for forming a semiconductor material on a wafer, as described in some implementations herein.
  • Figure 4 illustrates an example of yet another method for forming a semiconductor material on a wafer, as described in some implementations herein.
  • Figure 5 illustrates an example of a method for forming a cell, as described in some implementations herein.
  • Figure 6 illustrates another example of a method for forming a semiconductor material on a wafer, as described in some implementations herein.
  • Figure 7 illustrates another example of a method for forming a cell, as described in some implementations herein.
  • Implementations of the disclosure generally relate processes for epitaxial growing Group lll/V materials at high growth rates, such as about 30 mm/hr or greater, for example, about 40 mm/hr, about 50 mm/hr, about 55 mm/hr, about 60 mm/hr, about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the deposited Group lll/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. These electronic device applications may include applications that involve optoelectronic devices, components, or modules.
  • the Group lll/V materials may be formed or grown on a sacrificial layer disposed on over the support substrate during a vapor deposition process. Subsequently, the Group lll/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process, for example.
  • the Group lll/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.
  • a method for forming a Group lll/V material containing gallium arsenide on the wafer includes heating a wafer to a deposition temperature of about 550°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas and arsine, and depositing a gallium arsenide layer on the wafer at a deposition rate of about 30 mm/hr or greater.
  • a method for forming a Group lll/V material containing gallium aluminum arsenide includes heating the wafer to a deposition temperature of about 650°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas, an aluminum precursor gas, and arsine, and depositing a gallium aluminum arsenide layer at a deposition rate of about 30 mm/hr or greater.
  • the Group lll/V material contains an n-type gallium aluminum arsenide layer having the chemical formula of Al 0.3 Ga 0.7 As.
  • a method for forming a Group lll/V material on a wafer or substrate includes heating a wafer to a deposition temperature of about 600°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas, an indium precursor gas, and arsine, and depositing a Group lll/V layer on the wafer at a deposition rate of about 30 mm/hr or greater.
  • the Group lll/V layer contains gallium, arsenic, and indium.
  • the deposition temperature is within a range from about 650°C to about 800°C.
  • the gallium precursor gas contains trimethylgallium and the indium precursor gas contains trimethylindium.
  • a method for forming a Group lll/V material on a wafer or substrate includes heating a wafer to a deposition temperature of about 600°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas, an indium precursor gas, a nitrogen precursor gas, and arsine, depositing a Group lll/V layer on the wafer at a deposition rate of about 30 mm/hr or greater, wherein the Group lll/V layer contains gallium, arsenic, indium, and nitrogen.
  • the nitrogen precursor gas may contain hydrazine, methylhydrazine, dimethylhydrazine, derivatives thereof, or combinations thereof.
  • the nitrogen precursor gas contains dimethylhydrazine.
  • the nitrogen precursor gas contains hydrazine.
  • the gallium precursor gas contains trimethylgallium and the indium precursor gas contains trimethylindium.
  • a method for forming a Group lll/V material on a wafer or substrate includes heating a wafer to a deposition temperature of about 600°C or greater within a processing system, exposing the wafer to a deposition gas containing a gallium precursor gas, an indium precursor gas, an aluminum precursor, and a phosphorus precursor, depositing a Group lll/V layer on the wafer at a deposition rate of about 30 mm/hr or greater, wherein the Group lll/V layer contains gallium, indium, aluminum, and phosphorus.
  • the gallium precursor contains trimethylgallium
  • the aluminum precursor contains trimethylaluminum
  • the indium precursor contains trimethylindium
  • the phosphorus precursor contains phosphine.
  • the deposition rate or growth rate may be about 40 mm/hr or greater, such as about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater (e.g., about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr).
  • the deposition temperature may be about 600°C or greater, or may be about 700°C or greater, or may be about 800°C or greater, or may be about 850°C. In some examples, the deposition temperature may be within a range from about 550°C to about 900°C.
  • the deposition temperature may be within a range from about 600°C to about 800°C. In other examples, the deposition temperature may be within a range from about 650°C to about 750°C. In other examples, the temperature may be within a range from about 650°C to about 720°C. In other examples, such as for deposition rates of about 90-120 mm/hr, the deposition temperature may be within a range from about 680°C to about 850°C.
  • the gallium precursor gas may contain an alkyl gallium compound.
  • the alkyl gallium compound may be trimethylgallium or triethylgallium.
  • the deposition gas may further contain an aluminum precursor gas and the gallium arsenide layer further contains aluminum.
  • the aluminum precursor gas may contain an alkyl aluminum compound, such as trimethylaluminum or triethylaluminum.
  • the deposition gas contains the arsine and the gallium precursor gas at an arsine/gallium precursor ratio of about 3 or greater, or may be about 4 or greater, or may be about 5 or greater, or may be about 6 or greater, or may be about 7 or greater.
  • the arsine/gallium precursor ratio may be within a range from about 5 to about 10.
  • the Group lll/V materials may be formed or grown from a deposition gas containing a ratio of Group V precursor to Group III precursor of about 30:1 , or 40: 1 , or 50:1 , or 60:1 , or greater.
  • the deposition gas has a phosphine/Group III precursor of about 50:1.
  • the processing system may have an internal pressure within a range from about 20 Torrto about 1 ,000 Torr.
  • the internal pressure may be ambient or greater than ambient, such as within a range from about 760 Torr to about 1 ,000 Torr.
  • the internal pressure may be within a range from about 800 Torr to about 1 ,000 Torr.
  • the internal pressure is within a range from about 780 Torr to about 900 Torr, such as from about 800 Torr to about 850 Torr.
  • the internal pressure may be ambient or less than ambient, such as within a range from about 20 Torr to about 760 Torr, preferably, from about 50 Torr to about 450 Torr, and more preferably, from about 100 Torr to about 250 Torr.
  • the deposition gas further contains a carrier gas.
  • the carrier gas may contain hydrogen (H 2 ), nitrogen (N 2 ), a mixture of hydrogen and nitrogen, argon, helium, or combinations thereof.
  • the carrier gas contains hydrogen, nitrogen, or a mixture of hydrogen and nitrogen.
  • the flow rates for the various gases used in the deposition process may depend on the chemical vapor deposition (e.g., metal-organic chemical vapor deposition or MOCVD) tool used for the process.
  • chemical vapor deposition e.g., metal-organic chemical vapor deposition or MOCVD
  • Figure 1 depicts gallium arsenide stack 100 containing multiple Group lll/V materials or layers which may be formed by the high growth rate deposition processes according to implementations described herein.
  • the Group lll/V materials or layers can be grown or deposited at any one of the following deposition rates: about 30 mm/hr, about 40 mm/hr, about 50 mm/hr, about 55 mm/hr, about 60 mm/hr, about 70 mm/hr, about 80 mm/hr, about 90 mm/hr, about 95 mm/hr, about 100 mm/hr, about 105 mm/hr, about 1 10 mm/hr, about 1 15 mm/hr, and about 120 mm/hr.
  • gallium arsenide cell 110 within gallium arsenide stack 100.
  • Figure 1 depicts gallium arsenide stack 100 contains gallium arsenide cell 1 10 disposed on or over sacrificial layer 1 16 disposed on or over buffer layer 1 14 disposed on or over wafer 1 12.
  • Wafer 1 12 may be a support substrate containing Group lll/V materials, and may be doped with various elements. Generally wafer 1 12 contains gallium arsenide, alloys thereof, derivatives thereof, and may be an n-doped substrate or a p-doped substrate. In many examples, wafer 1 12 is a gallium arsenide substrate or a gallium arsenide alloy substrate. The gallium arsenide substrate or wafer may have a thermal expansion coefficient of about 5.73x10 -6 °C -1 .
  • Buffer layer 1 14 may be a gallium arsenide buffer layer which contains gallium arsenide, alloys thereof, dopants thereof, or derivatives thereof. Buffer layer 114 may have a thickness within a range from about 100 nm to about 1000 nm, such as about 200 nm or about 300 nm. In some instances, the buffer layer 1 14 is a gallium arsenide buffer layer in a range from about 50 nm to about 2000 nm.
  • Sacrificial layer 1 16 also referred to as the ELO release layer, may contain aluminum arsenide, alloys thereof, derivatives thereof, or combinations thereof. Sacrificial layer 1 16 may have a thickness of about 20 nm or less. In some examples the thickness of sacrificial layer 1 16 may be within a range from about 1 nm to about 20 nm, such as from about 5 nm to about 20 nm, or in other examples, from about 1 nm to about 10 nm, such as from about 4 nm to about 6 nm.
  • Gallium arsenide cell 1 10 further contains n-type gallium arsenide stack 120 disposed on or over p-type gallium arsenide stack 130.
  • N-type dopants used may include Si, Te, and Se, and p-type dopants used may include C, Zn, and Mg.
  • the n- type gallium arsenide stack 120 usually contains multiples layers of various n-type doped materials. In one implementation, n-type gallium arsenide stack 120 contains emitter layer 126 disposed on or over passivation layer 124, disposed on or over contact layer 122. In some implementations, the n-type gallium arsenide stack 120 may have a thickness within a range from about 200 nm to about 1 ,300 nm.
  • Contact layer 122 may be a gallium arsenide contact layer which contains gallium arsenide, alloys thereof, dopants thereof, or derivatives thereof. In some examples, contact layer 122 contains an n-type gallium arsenide material. Contact layer 122 may have a thickness within a range from about 5 nm to about 100 nm, such as about 10 nm or about 50 nm.
  • Passivation layer 124 also referred to as the front window, generally contains aluminum gallium arsenide, alloys thereof, derivatives thereof, or combinations thereof. In many examples, passivation layer 124 contains an n-type aluminum gallium arsenide material. In one example, passivation layer 124 contains an n-type aluminum gallium arsenide material having the chemical formula of Al 0.3 Ga 0.7 As. Passivation layer 124 may have a thickness within a range from about 5 nm to about 100 nm, such as about 10 nm or about 50 nm.
  • Emitter layer 126 may contain gallium arsenide, alloys thereof, derivatives thereof, or combinations thereof. In many examples, emitter layer 126 contains an n- type gallium arsenide material. Emitter layer 126 may have a thickness within a range from about 100 nm to about 3000 nm. In some examples the thickness of emitter layer 126 may be within a range from about 100 nm to about 600 nm, such as from about 200 nm to about 400 nm, or in other examples, from about 600 nm to about 1 ,200 nm, such as from about 800 nm to about 1 ,000 nm.
  • the p-type gallium arsenide layer or stack 130 usually contains multiples layers of various p-type doped materials.
  • p-type gallium arsenide stack 130 contains contact layer 136 disposed on or over passivation layer 134, disposed on or over absorber layer 132.
  • absorber layer 132 is absent from p-type gallium arsenide stack 130. Therefore, p- type gallium arsenide stack 130 contains contact layer 136 disposed on or over passivation layer 134, and passivation layer 134 may be disposed on or over n-type gallium arsenide stack 120, emitter layer 126, or another layer.
  • the p-type gallium arsenide stack 130 may have a thickness within arange from about 100 nm to about 3,000 nm.
  • Absorber layer 132 may contain gallium arsenide, alloys thereof, derivatives thereof, or combinations thereof. In many examples, absorber layer 132 contains a p- type gallium arsenide material. In one implementation, absorber layer 132 may have a thickness within a range from about 1 nm to about 3,000 nm. In some examples the thickness of absorber layer 132 may be within a range from about 1 nm to about 1 ,000 nm, such as from about 10 nm to about 100 nm, or in other examples, from about 1 ,000 nm to about 3,000 nm, such as from about 1 ,100 nm to about 2,000 nm.
  • the thickness of absorber layer 132 may be within a range from about 100 nm to about 600 nm, such as from about 200 nm to about 400 nm, or in other examples, from about 600 nm to about 1 ,200 nm, such as from about 800 nm to about 1 ,000 nm.
  • Passivation layer 134 also referred to as the rear window, generally contains aluminum gallium arsenide, alloys thereof, derivatives thereof, or combinations thereof. In many examples, passivation layer 134 contains a p-type aluminum gallium arsenide material. In one example, passivation layer 134 contains a p-type aluminum gallium arsenide material having the chemical formula of Al 0.3 Ga 0.7 As. Passivation layer 134 may have a thickness within a range from about 25 nm to about 100 nm, such as about 50 nm or about 300 nm.
  • Contact layer 136 may be a p-type gallium arsenide contact layer which contains gallium arsenide, alloys thereof, dopants thereof, or derivatives thereof. In some examples, contact layer 136 contains a p-type gallium arsenide material. Contact layer 136 may have a thickness within a range from about 5 nm to about 100 nm, such as about 10 nm or about 50 nm.
  • aspects of the deposition processes for depositing or forming Group lll/V materials may be conducted in a processing system such as, for example, a single wafer deposition chamber, amulti-wafer deposition chamber, a stationary deposition chamber, or a continuous feed deposition chamber.
  • a processing system such as, for example, a single wafer deposition chamber, amulti-wafer deposition chamber, a stationary deposition chamber, or a continuous feed deposition chamber.
  • One continuous feed deposition chamber that may be utilized for depositing or forming Group lll/V materials is described in the commonly assigned U.S. Ser. No. 12/475,131 (titled“Methods and Apparatus for a Chemical Vapor Deposition Reactor") filed on May 29, 2009, and U.S. Ser. No. 12/475,169 (titled“Methods and Apparatus for a Chemical Vapor Deposition Reactor” filed on May 29, 2009 and issued as U.S. Patent No. 8,602,707,
  • a deposition gas may be formed by combining or mixing two, three, or more chemical precursors within a gas manifold prior to entering or passing through the showerhead.
  • the deposition gas may be formed by combining or mixing two, three, or more chemical precursors within a reaction zone after passing through the showerhead.
  • the deposition gas may also contain one, two or more carrier gases, which may also be combined or mixed with the precursor gases prior to or subsequent to passing through the showerhead.
  • the carrier gas may be hydrogen, nitrogen, argon, or combinations thereof.
  • the internal pressure of the deposition chamber may be within a range from about 250 Torr to about 450 Torr.
  • the deposition gas may be formed by combining a gallium precursor (e.g., TMG) and an arsenic precursor (e.g., arsine).
  • TMG gallium precursor
  • arsenic precursor e.g., arsine
  • the substrate may be heated to a deposition temperature and exposed to the deposition gas.
  • the deposition temperature can have a wide range. In one example, the deposition temperature may be within a range from about 600°C to about 800°C, such as from about 650°C to about 750°C or from about 650°C to about 720°C.
  • the deposition gas may contain about 100 cc of arsine in about 2,000 cc of hydrogen gas (H 2 ) and about 200 cc of a mixture of TMG/H 2 (about 10% TMG in H 2 .
  • the Group lll/V material contains gallium and arsenic and may be deposited at a rate of about 30 mm/hr or greater, such as about 40 mm/hr or greater, preferably, about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater.
  • deposition rates greater than about 60 mm/hr can include deposition rates of about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the deposition temperature can be in the range from about 680°C to about 850°C.
  • the deposition gas may be formed by combining a gallium precursor (e.g., TMG), an aluminum precursor (e.g., TMA), and an arsenic precursor (e.g., arsine).
  • TMG gallium precursor
  • TMA aluminum precursor
  • arsenic precursor e.g., arsine
  • the substrate may be heated to a deposition temperature and exposed to the deposition gas.
  • the deposition temperature can have a wide range. In one example, the deposition temperature may be within a range from about 600°C to about 800°C.
  • the deposition gas may contain about 100 cc of arsine in about 2,000 cc of hydrogen gas; about 200 cc of a mixture of TMG/H 2 (about 10% TMG in H 2 ); and about 200 cc of TMA/H 2 (about 1 % TMA in H 2 ).
  • the Group lll/V material contains gallium, aluminum, and arsenic and may be deposited at a rate of about 30 mm/hr or greater, such as about 40 mm/hr or greater, preferably, about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater.
  • deposition rates greater than about 60 mm/hr can include deposition rates of about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the deposition temperature can be in the range from about 680°C to about 850°C.
  • the deposition gas may be formed by combining a gallium precursor (e.g., TMG), an aluminum precursor (e.g., TMA), an indium precursor (e.g., trimethylindium - TMI), and a phosphorus precursor (e.g., phosphine - PH 3 ).
  • TMG gallium precursor
  • TMA aluminum precursor
  • TMA aluminum precursor
  • TMA aluminum precursor
  • indium precursor e.g., trimethylindium - TMI
  • a phosphorus precursor e.g., phosphine - PH 3
  • the substrate may be heated to a deposition temperature and exposed to the deposition gas.
  • the deposition temperature can have a wide range. In one example, the deposition temperature may be within a range from about 600°C to about 800°C.
  • the deposition gas may contain about 200 cc of a mixture of TMG/H 2 (about 10% TMG in H 2 ); about 200 cc of TMA/H 2 (about 1 % TMA in H 2 ); about 200 cc of TMI/H 2 (about 1 % TMI in H 2 ); and about 100 cc of phosphine in about 2,000 cc of hydrogen gas.
  • the Group lll/V material contains gallium, aluminum, indium, and phosphorus and may be deposited at a rate of about 30 mm/hr or greater, such as about 40 mm/hr or greater, preferably, about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater.
  • deposition rates greater than about 60 mm/hr can include deposition rates of about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the deposition temperature can be in the range from about 680°C to about 850°C.
  • the deposition gas may be formed by combining a gallium precursor (e.g., TMG), an indium precursor (e.g., trimethylindium), and an arsenic precursor (e.g., arsine).
  • TMG gallium precursor
  • indium precursor e.g., trimethylindium
  • arsenic precursor e.g., arsine
  • the substrate may be heated to a deposition temperature and exposed to the deposition gas.
  • the deposition temperature can have a wide range. In an example, the deposition temperature may be within a range from about 600°C to about 800°C.
  • the deposition gas may contain about 100 cc of arsine in about 2,000 cc hydrogen gas; about 200 cc of a mixture of TMG/H 2 (about 10% TMG in H 2 ); and about 200 cc of TMI/H 2 (about 1 % TMI in H 2 ).
  • the Group lll/V material contains gallium, indium, and arsenic and may be deposited at a rate of about 30 mm/hr or greater, such as about 40 mm/hr or greater, preferably, about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater.
  • deposition rates greater than about 60 mm/hr can include deposition rates of about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the deposition temperature can be in the range from about 680°C to about 850°C.
  • the deposition gas may be formed by combining a gallium precursor (e.g., TMG), an indium precursor (e.g., trimethylindium), an arsenic precursor (e.g., arsine), and a nitrogen precursor (e.g., dimethylhydrazine or hydrazine).
  • TMG gallium precursor
  • an indium precursor e.g., trimethylindium
  • an arsenic precursor e.g., arsine
  • a nitrogen precursor e.g., dimethylhydrazine or hydrazine
  • the substrate may be heated to a deposition temperature and exposed to the deposition gas.
  • the deposition temperature can have a wide range. In an example, the deposition temperature may be within a range from about 400°C to about 500°C, such as about 450°C.
  • the deposition gas may contain about 10 cc of arsine in about 2,000 cc of hydrogen gas; about 200 cc of a mixture of TMG/H 2 (about 10% TMG in H 2 ); about 200 cc of TMI/H 2 (about 1 % TMI in H 2 ); and about 100 cc of dimethylhydrazine in about 1 ,000 cc of hydrogen gas.
  • the Group lll/V material contains gallium, indium, aluminum, arsenic, and nitrogen and may be deposited at a rate of about 30 mm/hr or greater, such as about 40 mm/hr or greater, preferably, about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater.
  • deposition rates greater than about 60 mm/hr can include deposition rates of about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the deposition temperature can be in the range from about 680°C to about 850°C.
  • the deposition gas may be formed by combining a gallium precursor (e.g., TMG), an indium precursor (e.g., trimethylindium), an arsenic precursor (e.g., arsine), and a phosphorus precursor (e.g., phosphine - PH 3 ).
  • the substrate may be heated to a deposition temperature and exposed to the deposition gas.
  • the deposition temperature can have a wide range. In an example, the deposition temperature may be within a range from about 600°C to about 800°C.
  • the deposition gas may contain about 100 cc of arsine in about 2,000 cc of hydrogen gas; about 200 cc of a mixture of TMG/H 2 (about 10% TMG in H 2 ); about 200 cc of TMI/H 2 (about 1 % TMI in H 2 ); and about 100 cc of phosphine in about 2,000 cc of hydrogen gas.
  • the Group lll/V material contains gallium, indium, arsenic, and phosphorus, and may be deposited at a rate of about 30 mm/hr or greater, such as about 40 mm/hr or greater, preferably, about 50 mm/hr or greater, preferably, about 55 mm/hr or greater, and more preferably, about 60 mm/hr or greater.
  • deposition rates greater than about 60 mm/hr can include deposition rates of about 70 mm/hr, about 80 mm/hr, or about 90-120 mm/hr.
  • the deposition temperature can be in the range from about 680°C to about 850°C.
  • Example 7 - InGaP In another example, the deposition gas may be formed by combining a gallium precursor (e.g., TMG), an indium precursor (e.g., trimethylindium), and a phosphorus precursor (e.g., phosphine - PH 3 ).
  • the substrate may be heated to a deposition temperature and exposed to the deposition gas.
  • the deposition temperature can have a wide range.
  • the Group lll/V material in this example contains gallium, indium, and phosphorus, and may be deposited at high growth rates (e.g., at or greater than 8 mm/hr) to form InGaP layers for a solar cell (referred to as an InGaP solar cell).
  • layers of InGaP compounds may be deposited at a deposition rate selected from the group consisting of 8 mm/hr, 10 mm/hr, 20 mm/hr, 30 mm/hr, and a range of 8-120 mm/hr deposition rates.
  • the InGaP solar cell can be n-on-p or p-on-n or n-i-p in design.
  • the InGaP solar cell may be a front-junction device or a rear-junction device.
  • a p-n junction in the InGaP solar cell may be formed as a homo-junction with InGaP on both sides of the junction grown at fast growth rate, or as a hetero-junction with InGaP on one-side of the junction and AIGalnP , AllnP, AIGaAs, or a similar alloy on the other side of the junction.
  • cc may refer to cubic centimeters and may correspond to a flow rate or flow unit, such as a standard cubic centimeters per minute (seem).
  • Figure 2 illustrates an example of a method 200 for forming a semiconductor material on a wafer, as described in some implementations herein.
  • the method 200 includes heating a wafer to a deposition temperature in a range between 550°C and 900°C within a processing system.
  • the method 200 includes exposing the wafer to a deposition gas comprising a gallium precursor gas and arsine at a total pressure in a range between 20 Torr and 1000 Torr.
  • the method 200 includes depositing one or more layers having gallium arsenide on the wafer at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, wherein multiple layers, including the one or more layers, form a gallium arsenide cell.
  • the gallium arsenide cell may be used in an optoelectronic device (e.g., photovoltaic or solar cell) or in an electronic device (e.g., transistors).
  • the range of the deposition temperature can be between 680°C and 850°C.
  • the deposition gas can further include an aluminum precursor gas and the gallium arsenide layer can further include aluminum.
  • the aluminum precursor gas can include an alkyl aluminum compound.
  • the alkyl aluminum compound can be trimethylaluminum or triethylaluminum.
  • the deposition gas can further include a carrier gas comprising a mixture of hydrogen and argon.
  • an n-type portion of the gallium arsenide cell is deposited over a sacrificial layer having a thickness between 1 nm and 20 nm, where the sacrificial layer is disposed over a buffer layer, and the buffer layer is disposed over the wafer.
  • the multiple layers form an n-type gallium arsenide stack and a p-type gallium arsenide stack, where the n-type gallium arsenide stack has an emitter layer disposed on or over a first passivation layer, and where the first passivation layer is disposed on or over a first contact layer; and where the p-type gallium arsenide stack has a second contact layer disposed on or over a second passivation layer, and where the second passivation layer being disposed on or over an absorber layer.
  • the range of the deposition temperature can be between 600°C and 800°C.
  • the range of the total pressure can be selected from the group consisting of between 20 Torr and 760 Torr, between 50 Torr and 450 Torr, and between 100 Torr and 250 Torr.
  • Figure 3 illustrates an example of a method 300 for forming a semiconductor material on a wafer, as described in some implementations herein.
  • the method 300 includes heating a wafer to a deposition temperature in a range between 550°C and 900°C within a processing system.
  • the method 300 includes exposing the wafer to a deposition gas comprising a gallium precursor gas, an aluminum precursor gas, and arsine at a total pressure in a range between 20 Torr and 1000 Torr.
  • the method 300 includes depositing one or more layers on the wafer at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, where the one or more layers include aluminum gallium arsenide, and multiple layers, including the one or more layers, form an aluminum gallium arsenide cell.
  • the aluminum gallium arsenide cell may be used in an optoelectronic device (e.g., photovoltaic or solar cell) or in an electronic device (e.g., transistors).
  • the range of the deposition temperature is between 680°C and 850°C.
  • an n-type portion of the gallium arsenide cell is deposited over a sacrificial layer having a thickness between 1 nm and 20 nm, where the sacrificial layer is disposed over a buffer layer, and where the buffer layer is disposed over the wafer.
  • the multiple layers form an n-type gallium arsenide stack and a p-type gallium arsenide stack, where the n-type gallium arsenide stack has an emitter layer disposed on or over a first passivation layer, and where the first passivation layer is disposed on or over a first contact layer; and where the p-type gallium arsenide stack has a second contact layer disposed on or over a second passivation layer, and where the second passivation layer is disposed on or over an absorber layer.
  • the range of the deposition temperature can be between 600°C and 800°C.
  • the range of the total pressure can be selected from the group consisting of between 20 Torr and 760 Torr, between 50 Torr and 450 Torr, and between 100 Torr and 250 Torr.
  • Figure 4 illustrates an example of a method 400 for forming a semiconductor material on a wafer, as described in some implementations herein.
  • the method 400 includes heating a wafer to a deposition temperature in a range between 550°C and 900°C within a processing system.
  • the method 400 includes exposing the wafer to a deposition gas comprising a gallium precursor gas, an indium precursor gas, a nitrogen precursor gas and arsine at a total pressure in a range between 20 Torr and 1000 Torr.
  • the method 400 includes depositing one or more layers on the wafer at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, where the one or more layers comprise gallium, arsenic, nitrogen and indium, and multiple layers, including the one or more layers, form a GalnAsN cell.
  • the GalnAsN cell may be used in an optoelectronic device (e.g., photovoltaic or solar cell) or in an electronic device (e.g., transistors).
  • the range of the deposition temperature is between 680°C and 850°C.
  • the nitrogen precursor gas comprises a compound selected from the group consisting of hydrazine, methylhydrazine, dimethylhydrazine, derivatives thereof, and combinations thereof.
  • an n-type portion of the gallium arsenide cell is deposited over a sacrificial layer having a thickness between 1 nm and 20 nm, where the sacrificial layer is disposed over a buffer layer, and where the buffer layer is disposed over the wafer.
  • the multiple layers form an n-type gallium arsenide stack and a p-type gallium arsenide stack, where the n-type gallium arsenide stack has an emitter layer disposed on or over a first passivation layer, and where the first passivation layer is disposed on or over a first contact layer; and where the p-type gallium arsenide stack has a second contact layer disposed on or over a second passivation layer, and where the second passivation layer is disposed on or over an absorber layer.
  • the deposition temperature can be between 400°C and 500°C.
  • the range of the total pressure can be selected from the group consisting of between 20 Torr and 760 Torr, between 50 Torr and 450 Torr, and between 100 Torr and 250 Torr.
  • Figure 5 illustrates an example of a method 500 for forming a cell, as described in some implementations herein.
  • the method 500 includes heating a substrate comprising gallium and arsenic to a temperature in a range between 550°C and 900°C within a processing system.
  • the method 500 includes exposing the substrate to a deposition gas comprising a gallium arsenide precursor gas and arsine.
  • the method 500 includes depositing an n-type contact layer comprising gallium and arsenic over the substrate, where the n-type contact layer has a thickness of 100 nm or less.
  • the method 500 includes depositing an n-type passivation layer comprising gallium, aluminum, and arsenic over the substrate, where the n-type passivation layer has a thickness of 100 nm or less.
  • the method 500 includes depositing an n-type absorber layer comprising gallium and arsenic over the substrate, where the n-type emitter layer has a thickness of 3000 nm or less.
  • the method 500 includes depositing a p-type passivation layer comprising gallium, aluminum, and arsenic over the substrate, where the p-type passivation layer has a thickness of 300 nm or less.
  • the method 500 includes depositing a p-type contact layer comprising gallium and arsenic over the substrate, the p-type contact layer having a thickness of 100 nm or less, where each of the n-type contact layer, the n-type passivation layer, the n-type absorber layer, the p-type passivation layer, and the p- type contact layer is deposited at deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates.
  • the method further includes depositing a sacrificial layer comprising aluminum and arsenic over the substrate at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, where the sacrificial layer has a thickness of 20 nm or less.
  • the method can further include depositing the n-type contact layer over the sacrificial layer, depositing the n-type passivation layer over the n-type contact layer, depositing the n-type absorber layer over the n-type passivation layer, depositing the p-type passivation layer over the p-type absorber layer, and depositing the p-type contact layer over the p-type passivation layer.
  • the method further includes depositing a buffer layer comprising gallium and arsenic on the substrate at a deposition rate selected from the group consisting of a 30 mm/hr deposition rate, a 40 mm/hr deposition rate, a 50 mm/hr deposition rate, a 55 mm/hr deposition rate, and a 60 mm/hr deposition rate or greater, where the buffer layer has a thickness of less than 300 nm.
  • the method further includes depositing a sacrificial layer comprising aluminum and arsenic over the substrate at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, where the sacrificial layer has a thickness of 20 nm or less,
  • the method further includes depositing a buffer layer comprising gallium and arsenic on the substrate at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, where the buffer layer has a thickness of less than 300 nm.
  • the method can further include depositing the sacrificial layer over the buffer layer.
  • exposing the substrate to the deposition gas further includes exposing the substrate to a total pressure of 450 Torr or less, or exposing the substrate to a total pressure of at least 780 Torr.
  • Figure 6 illustrates an example of a method 600 forforming a semiconductor material on a wafer, as described in some implementations herein.
  • the method 600 includes heating a wafer to a deposition temperature in a range between 550°C and 900°C within a processing system.
  • the method 600 includes exposing the wafer to a deposition gas comprising a gallium precursor gas, an indium precursor gas, and phosphine at a total pressure in a range between 20 Torr and 1000 Torr.
  • the method 600 includes depositing one or more layers having InGaP on the wafer at a deposition rate selected from the group consisting of 8 mm/hr, 10 mm/hr, 20 mm/hr, 30 mm/hr, and a range of 8-120 mm/hr deposition rates, wherein multiple layers, including the one or more layers, form an InGaP solar cell.
  • the range of the deposition temperature may be between 550°C and 900°C.
  • the InGaP solar cell is a metamorphic structure where the one or more InGaP layers are grown mismatched to the wafer, wherein the wafer is a GaAs substrate.
  • the InGaP has a range of compositions represented by ln x Gai- x P with x being the composition of indium, wherein the indium composition is in a range between 30% to 70% when the one or more InGaP layers are mismatched to the wafer and the wafer is a GaAs substrate, and wherein the indium composition is 50% +/-4% when the one or more InGaP layers are lattice- matched to GaAs.
  • the InGaP cell is part of an optoelectronic device or an electronic device.
  • the optoelectronic device may include a light-emitting diode (LED), a laser, a transistor-laser, a photodetector, or a photovoltaic, including a solar cell.
  • the electronic device is a transistor and the transistor is one of a heterojunction bipolar transistor (HBT), a high electron mobility transistor (HEMT), a quantum well field effect transistor (QWFET), or a pseudomorphic HEMT (pHEMT).
  • HBT heterojunction bipolar transistor
  • HEMT high electron mobility transistor
  • QWFET quantum well field effect transistor
  • pHEMT pseudomorphic HEMT
  • the gallium precursor gas and the indium precursor gas includes one or more of TMIn, TEIn, TMGa, TEGa, PH 3 , or TBP (tert-butylphosphine).
  • the deposition gas further comprises a carrier gas comprising a mixture of hydrogen and argon.
  • the InGaP cell is deposited over a sacrificial layer having a thickness between 1 nm and 200 nm, the sacrificial layer being disposed over a buffer layer, the buffer layer having a thickness in a range of 50 nm to 200 nm, and the buffer layer being disposed over the wafer.
  • the sacrificial layer may be made of one of AIAs, AllnP, AIGaAs, AllnGaP, or InGaP.
  • the multiple layers form an n-type InGaP stack and a p-type InGaP stack, the n-type InGaP stack having an emitter layer disposed on or over a first passivation layer, the first passivation layer being disposed on or over a first contact layer, and the p-type InGaP stack having a second contact layer disposed on or over a second passivation layer, the second passivation layer being disposed on or over an absorber layer.
  • the InGaP cell forms an n-on-p solar cell, a p-on-n solar cell, am n-i-p solar cell, or a p-i-n solar cell.
  • the InGaP cell is a front-junction device or a rear-junction device.
  • a front junction device may refer to a device having a p-n junction closer to a side of the device that receives the light and a rear junction device may refer to a device having a p-n junction closer to a side of the device away from a side of the device that receives the light.
  • the InGaP cell includes one or more p-n junctions, and at least one of the one or more p-n junctions is a homojunction with InGaP on both sides of the junction.
  • the InGaP cell includes one or more p-n junctions, and at least one of the one or more p-n junctions is a heterojunction with InGaP on one side and AIGalnP, AIGaAs, or AllnP on the other side, wherein the AIGalnP, AIGaAs, or AllnP is deposited at a deposition rate selected from the group consisting of 8mm/hr, 10 mm/hr, 20 mm/hr, 30 mm/hr, and a range of 8-120 mm/hr deposition rates.
  • the InGaP cell includes a graded junction and at least one of the one or more layers having InGaP is part of the graded junction.
  • the range of the deposition temperature is between 600°C and 800°C.
  • the range of the total pressure is selected from the group consisting of: between 20 Torr and 760 Torr, between 50 Torr and 450 Torr, and between 100 Torr and 250 Torr.
  • the method 600 is performed as part of a metal organic chemical vapor deposition (MOCVD) process that uses reactors with or without a showerhead configuration.
  • MOCVD metal organic chemical vapor deposition
  • a bubbler temperature for the indium precursor gas is in the range of 15 C to 60 ⁇ C.
  • the deposition rate under V/lll ratios of 1 to 300 is basically refers to how much Group V gases (like PH 3 ) flow in comparison to sum of Group III gases (like TMIn + TMGa). That is, the V/lll ratio is a simple representation of a ratio of gas flows: PH 3 / (TMGa+TMIn) for example in the case of InGaP.
  • Figure 7 illustrates an example of a method 700 for forming a cell, as described in some implementations herein.
  • the method 700 includes heating a substrate comprising gallium and arsenic to a temperature in a range between 550°C and 900°C within a processing system.
  • the method 700 includes exposing the substrate to a deposition gas comprising a gallium precursor gas and arsine.
  • the method 700 includes depositing an n-type contact layer comprising gallium and arsenic over the substrate, where the n-type contact layer has a thickness of 100 nm or less.
  • the method 700 includes depositing a first passivation layer comprising one or more of the following elements aluminum, gallium, indium, and/or phosphorous over the substrate, where the first passivation layer has a thickness of 100 nm or less.
  • the first passivation may be an n-type passivation.
  • the method 700 includes depositing an n-type or p-type absorber layer comprising one or more of the following elements gallium, indium, aluminum, and/or phosphorous over the substrate, where an n-type or p-type emitter layer has a thickness of 2000 nm or less.
  • the method 700 includes depositing a second passivation layer having one or more of the following elements gallium, indium, aluminum, and/or phosphorous, where the second passivation layer has a thickness of 2000 nm or less.
  • the method 700 includes depositing a p-type contact layer comprising one or more of the following elements aluminum, gallium, and arsenic over the substrate, the p-type contact layer having a thickness of 100 nm or less, where each of the n-type contact layer, the first passivation layer, the n-type or p-type absorber layer, the second passivation layer, and the p-type contact layer is deposited at deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and a range of 8-120 mm/hr deposition rates.
  • An n-type of p-type emitter layer may be deposited using the same depositing rates as described above.
  • the compounds having gallium, indium, aluminum, and/or phosphorous may be deposited at a deposition rate selected from the group consisting of 8 mm/hr, 10 mm/hr, 20 mm/hr, 30 mm/hr, and a range of 8- 120 mm/hr deposition rates.
  • An n-type of p-type emitter layer may include one or more of the materials described above and may be deposited using the same depositing rates as described above.
  • the range of the deposition temperature is between 550°C and 900°C.
  • the method 700 further includes depositing a sacrificial layer comprising aluminum and arsenic over the substrate at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, the sacrificial layer having a thickness of 200 nm or less; depositing the n-type contact layer over the sacrificial layer; depositing the first passivation layer over the n-type contact layer; depositing the n-type or p-type absorber layer over the first passivation layer; depositing the second passivation layer over the n-type of p-type absorber layer; and depositing the p-type contact layer over the second passivation layer.
  • a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr,
  • the method 700 further includes depositing a buffer layer comprising gallium and arsenic on the substrate at a deposition rate selected from the group consisting of a 30 mm/hr deposition rate, a 40 mm/hr deposition rate, a 50 mm/hr deposition rate, a 55 mm/hr deposition rate, and a 60 mm/hr deposition rate or greater, the buffer layer having a thickness in a range between 50 nm and 2000 nm; and depositing the sacrificial layer over the buffer layer.
  • a deposition rate selected from the group consisting of a 30 mm/hr deposition rate, a 40 mm/hr deposition rate, a 50 mm/hr deposition rate, a 55 mm/hr deposition rate, and a 60 mm/hr deposition rate or greater, the buffer layer having a thickness in a range between 50 nm and 2000 nm; and depositing the sacrificial layer over the buffer layer.
  • the method 700 further includes depositing a sacrificial layer comprising aluminum and arsenic over the substrate at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, the sacrificial layer having a thickness of 200 nm or less.
  • a buffer layer may be deposited comprising gallium and arsenic on the substrate at a deposition rate selected from the group consisting of 30 mm/hr, 40 mm/hr, 50 mm/hr, 55 mm/hr, 60 mm/hr, 70 mm/hr, 80 mm/hr, and 90-120 mm/hr deposition rates, the buffer layer having a thickness in a range between 50 nm and 2000 nm; and the sacrificial layer may be deposited over the buffer layer.
  • exposing the substrate to a deposition gas further comprises exposing the substrate to a total pressure of 450 Torr or less, or exposing the substrate to a total pressure of at least 780 Torr.
  • n-type or p-type emitter layer having a thickness of 2000 nm or less.

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Abstract

Des aspects de l'invention concernent des procédés de croissance épitaxiale de composé III-V de matériau (Al)GaInP à des taux élevés, tels qu'environ 8 µm/h, 10 μm/h, 20 μm/hr, 30 μm/hr, 40 μm/hr et des taux de dépôt de 8 à 120 µm/hr. Les matériaux (Al)InGaP ou films déposés à des taux de croissance élevé peuvent être utilisés dans des applications solaires, de semi-conducteurs ou d'autres dispositifs électroniques. Les matériaux du groupe III/V peuvent être formés ou croître sur une couche sacrificielle disposée sur le substrat support pendant un procédé de dépôt chimique en phase vapeur. Les matériaux du groupe III/V peuvent ensuite être retirés du substrat support pendant un procédé de décollement épitaxial (ELO). Les matériaux du groupe III/V sont des films minces de couches formées par croissance épitaxiale qui contiennent du phosphure d'indium aluminium gallium, du phosphure d'indium gallium, des dérivés, des alliages ou des combinaisons de ceux-ci.
EP20804988.2A 2019-05-14 2020-05-13 Dépôt à taux de croissance élevé pour matériaux du groupe iii/v Pending EP3969642A4 (fr)

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US16/412,328 US20190272994A1 (en) 2009-10-14 2019-05-14 High growth rate deposition for group iii/v materials
PCT/US2020/032676 WO2020232123A1 (fr) 2019-05-14 2020-05-13 Dépôt à taux de croissance élevé pour matériaux du groupe iii/v

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US4742012A (en) * 1984-11-27 1988-05-03 Toa Nenryo Kogyo K.K. Method of making graded junction containing amorphous semiconductor device
US8772628B2 (en) * 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US11393683B2 (en) * 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer
US9018517B2 (en) * 2011-11-07 2015-04-28 International Business Machines Corporation Silicon heterojunction photovoltaic device with wide band gap emitter
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