EP3810834A1 - Verfahren zur herstellung eines einkristalls aus halbleitermaterial gemäss der fz-methode; vorrichtung zur durchführung des verfahrens und halbleiterscheibe aus silizium - Google Patents
Verfahren zur herstellung eines einkristalls aus halbleitermaterial gemäss der fz-methode; vorrichtung zur durchführung des verfahrens und halbleiterscheibe aus siliziumInfo
- Publication number
- EP3810834A1 EP3810834A1 EP19728955.6A EP19728955A EP3810834A1 EP 3810834 A1 EP3810834 A1 EP 3810834A1 EP 19728955 A EP19728955 A EP 19728955A EP 3810834 A1 EP3810834 A1 EP 3810834A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- single crystal
- induction coil
- growing single
- melt zone
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 7
- 229910052710 silicon Inorganic materials 0.000 title abstract description 7
- 239000010703 silicon Substances 0.000 title abstract description 7
- 230000006698 induction Effects 0.000 claims abstract description 52
- 239000000155 melt Substances 0.000 claims abstract description 44
- 230000005291 magnetic effect Effects 0.000 claims abstract description 24
- 238000002844 melting Methods 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 9
- 239000002019 doping agent Substances 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 40
- 238000002474 experimental method Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 238000009377 nuclear transmutation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/26—Stirring of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Definitions
- the invention relates to a method for producing a single crystal from semiconductor material according to the FZ method, comprising the creation of a
- the invention also relates to a device which is suitable for carrying out the method and a semiconductor wafer made of silicon doped with n-type dopant and which is accessible by the method.
- the FZ method (floating zone method) comprises creating a melt zone between a supply rod and a growing single crystal, melting material of the supply rod in a high-frequency magnetic field and crystallizing material of the melt zone on the growing single crystal.
- No. 3,705,789 describes the production of a single crystal by using the FZ method, with a magnetic field being additionally impressed on the melt zone.
- This magnetic field is generated by another induction coil, which is fed with electrical current at a frequency between 500 Hz and 500 kHz.
- the additionally impressed magnetic field serves to support the melt zone.
- the process also includes rotating the
- JP 2015-229 612 A describes a method according to the FZ method which makes a semiconductor wafer made of single-crystal silicon accessible, which has a diameter of 200 mm and an RRV which, taking into account an edge exclusion of 5 mm, in the best case is between 3.8% and 16%.
- RRV radial resistivity variation
- n-type dopants such as phosphorus, arsenic and antimony
- Semiconductor wafers made of silicon in the radial direction are comparatively stronger than that of corresponding semiconductor wafers which are doped with dopant of the p-type.
- the object of the present invention is to provide a method for producing a single crystal from semiconductor material according to the FZ method, which brings about an equalization of the specific resistance and a
- the object is achieved by a method for producing a single crystal from semiconductor material which is doped with dopant, comprising
- the second induction coil which is the alternating magnetic field of the melt zone imprints to arrange tilted from a horizontal position.
- the axis through the center of the second induction coil and the axis of rotation of the growing single crystal form an angle other than zero. This angle is preferably not less than 15 ° and not more than 30 °.
- Magnetic field exerts an electromagnetic force on the melt zone, which improves the mixing of dopant in the melt zone and aligns the flow in the center of the melt zone very asymmetrically. As a result, the incorporation of dopant is made more uniform, particularly in the center of the growing single crystal.
- the method is effective regardless of the dopant type. It can therefore be used both to produce single crystals from semiconductor material which are doped with n-type dopant and also those which are doped with p-type dopant. It is particularly advantageous to use the method to produce single crystals from silicon, in particular those that have a diameter of at least 200 mm.
- the supply rod preferably consists of polycrystalline silicon and is preferably produced by means of gas phase deposition.
- Dopant can be fed to the growing single crystal via a pre-doped supply rod and / or via doping gas which is directed to the melt zone.
- dopant is passed as a doping gas on a path to an outer region of the melt zone. It is particularly preferred to conduct doping gas in two different ways to an outer region of the melt zone and to an inner region of the melt zone.
- the flow of the dopant gas and / or the concentration of dopant in the dopant gas can be set individually for both ways and in this way in particular a depletion of dopant in the edge region of the growing single crystal can be counteracted.
- the conduction of the doping gas to the outer region of the melt zone only begins after the growing single crystal has reached a diameter which is at least so large that the doping gas from the externally positioned nozzle onto the free surface of the melt and not directly onto the crystal edge meets.
- a diameter which is at least so large that the doping gas from the externally positioned nozzle onto the free surface of the melt and not directly onto the crystal edge meets.
- the cylindrical section is the section of the single crystal that is used in a subsequent one
- the doping gas preferably consists of a carrier gas and the dopant, for example of argon and phosphine.
- the growing single crystal is rotated clockwise or counterclockwise around an axis of rotation and the direction of rotation and the speed of rotation are changed from time to time according to a predetermined pattern.
- the invention further relates to a device for producing a
- Single crystal of semiconductor material which is doped with dopant, comprising
- a first induction coil for creating a melt zone between a supply bar and a growing single crystal
- Induction coil is arranged tilted from a horizontal plane.
- the second induction coil is fed with alternating current, the frequency of which is preferably not less than 25 Hz and not more than 250 Hz. This frequency is thus significantly lower than the frequency of the alternating current in the first induction coil, which is in the MHz range, typically in the range from 2 to 3 MHz.
- the second induction coil is preferably made with a magnetic
- the second induction coil is arranged tilted from a horizontally lying plane.
- the axis through the center of this induction coil forms an angle with the axis of rotation of the growing single crystal, which is preferably not less than 15 ° and not more than 30 °.
- the second induction coil is preferably arranged tilted such that the distance to the first induction coil arranged above it is greatest at the location where the first induction coil has its current leads.
- the second inductor is
- the device preferably further comprises one or more nozzles for guiding doping gas to an outer region of the melt zone and particularly preferably one or more further nozzles for guiding doping gas to an inner region of the melt zone.
- the nozzles are preferably mounted on a lower side of the first induction coil. For example, three of the outer nozzles are present and the distance between one of these nozzles and the next is 90 ° or preferably 120 °.
- the device preferably comprises a post-heater which surrounds the growing single crystal in the region of the phase boundary between the melt zone and the growing single crystal.
- the post-heater is preferably as
- the post-heater preferably has a diameter due to which its distance from the growing single crystal is smaller than the distance from the second induction coil to the growing single crystal.
- the second induction coil is preferably accommodated in a housing in which electrically insulated windings of the second induction coil are cooled by a coolant, for example water.
- the housing preferably consists of an electrically conductive material, for example of non-magnetic (non-ferromagnetic) steel. It is particularly preferred to use a housing
- the coating is particularly electrically conductive, preferably by means of a coating made of silver.
- the coating has a thickness which is preferably not less than 40 pm.
- the invention finally relates to a semiconductor wafer made of single-crystalline silicon with a diameter of at least 200 mm, which is doped with an n-type dopant a concentration of interstitial oxygen of no more than 1 x 10 16
- the n-type dopant is preferably phosphorus.
- a semiconductor wafer according to the invention is cut from a single crystal which was produced by using the method according to the invention.
- the concentration of interstitial oxygen results after measurement in accordance with the new ASTM standard.
- the RRV is measured according to the 4-point method along the diameter of the semiconductor wafer with a distance of adjacent measuring positions of 2 mm, whereby an edge exclusion of 6 mm must be taken into account.
- Striations result from fluctuations in temperature and dopant concentration at the phase boundary between the melt zone and the growing single crystal and thereby indicate triggered fluctuations in the specific resistance.
- the fluctuation range of striations is investigated by means of SRP measurement (spreading resistance profiling) along a line leading radially outwards from the center of the semiconductor wafer with a distance of adjacent measuring positions of 50 miti, measurement over a length of 60% of the radius.
- Fig. 1 shows schematically features of a preferred embodiment of the device according to the invention.
- Example experiments and a comparative experiment show the deviation of the specific resistance Dr measured by the 4-peak method from one
- the device shown in FIG. 1 comprises a first induction coil 1 and a second induction coil 2.
- the first induction coil is operated at high frequency
- the main task of the first induction coil is to create a melt zone 5 between the supply rod 3 and the growing single crystal 4 and to melt material of the supply rod 3 to compensate for material in the melt zone 5 which crystallizes on the growing single crystal 4.
- the second induction coil 2 is operated with low-frequency alternating current and is arranged around the growing single crystal 4 in such a way that it is arranged tilted from a horizontal position. Because of this arrangement, an axis 6 intersect through the center of the second induction coil 2 and the axis of rotation 7 of the growing single crystal 4 at an angle a that has a value that is greater than zero.
- the second induction coil 2 is tilted away from the power supply lines 8 to the first induction coil 1 and impresses an alternating magnetic field on the melt zone 5. Because of the tilted arrangement of the second
- Induction coil 2 causes the alternating magnetic field in melt zone 5 to generate a volume force that drives a melt flow in the direction of arrow 9 across the center of melt zone 5. This asymmetrical melt flow
- the device shown further comprises at least one nozzle 10 for guiding dopant gas, which contains the dopant, to an outer region of the melt zone 5 and at least one further nozzle 11 for guiding dopant gas, which contains the dopant, to an inner region of the melt zone 5
- the nozzles 10, 11 are preferably mounted on the lower side of the first induction coil 1.
- a typical device according to the invention can also do entirely without the inner nozzles 11.
- the device shown also comprises a passive post-heater 12 (reflector) which surrounds the growing single crystal 4 and has the effect that the radial temperature gradient at the edge of the growing single crystal 4 is weakened, in particular in the region of the phase boundary between the melting zone 5 and the growing single crystal 4 ,
- the invention was tested in experiments using a device with the features shown in FIG. 1 to produce single crystals of silicon doped with n-type dopant (doping gas: Ar and PH3).
- the single crystals were then ground and processed into polished semiconductor wafers with a diameter of 200 mm.
- the second induction coil 2 had a diameter of 300 mm and consisted of 121 turns. It was from a horizontal position
- the induction coil was operated with 50 Hz alternating current, and the current strength was 5 A in a first example experiment (which corresponded to a magnetic flux of 605 ampere turns) and 7.5 A in a second example experiment (which corresponded to a magnetic flux of 907.5 ampere turns).
- a further single crystal was produced in a comparative test and processed into semiconductor wafers, the
- the resistivity of the semiconductor wafers obtained was measured using the 4-point method along the diameter of the semiconductor wafer (Distance between adjacent measurement positions 2 mm, edge exclusion 6 mm), and the fluctuation range of striations is determined by means of SRP measurement (along a line leading radially outward from the center of the semiconductor wafer with a distance between adjacent measurement positions of 50 mm, with a length of 60 % of the radius was measured).
- Fig. 4 shows the for some semiconductor wafers of a third example
- the single crystal is doped by passing doping gas to the melt zone on a path to an outer region of the melt zone and on a path to an inner region of the melt zone, while in the first and second
- melt zone was dispensed with. It can be seen that the additional conduction of the doping gas leads to the outer region of the melt zone
- the RRV was not more than 9% and the fluctuation range of striations was not more than ⁇ 10%.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Engineering (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018210317.8A DE102018210317A1 (de) | 2018-06-25 | 2018-06-25 | Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium |
PCT/EP2019/064554 WO2020001940A1 (de) | 2018-06-25 | 2019-06-04 | Verfahren zur herstellung eines einkristalls aus halbleitermaterial gemäss der fz-methode; vorrichtung zur durchführung des verfahrens und halbleiterscheibe aus silizium |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3810834A1 true EP3810834A1 (de) | 2021-04-28 |
Family
ID=66776334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19728955.6A Pending EP3810834A1 (de) | 2018-06-25 | 2019-06-04 | Verfahren zur herstellung eines einkristalls aus halbleitermaterial gemäss der fz-methode; vorrichtung zur durchführung des verfahrens und halbleiterscheibe aus silizium |
Country Status (8)
Country | Link |
---|---|
US (1) | US11788201B2 (de) |
EP (1) | EP3810834A1 (de) |
JP (1) | JP7225270B2 (de) |
KR (1) | KR102522807B1 (de) |
CN (1) | CN112334605B (de) |
DE (1) | DE102018210317A1 (de) |
TW (1) | TWI707991B (de) |
WO (1) | WO2020001940A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115558984B (zh) * | 2022-09-21 | 2024-06-25 | 中国电子科技集团公司第十三研究所 | 一种无坩埚制备大尺寸半导体晶体的方法 |
Family Cites Families (23)
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US3203768A (en) * | 1961-08-01 | 1965-08-31 | Westinghouse Electric Corp | Apparatus of zone refining and controlling solute segregation in solidifying melts by electromagnetic means |
DE1519888B2 (de) | 1966-04-15 | 1970-04-16 | Siemens AG, 1000 Berlin u. 8000 München | Verfahren zum tiegelfreien Zonenschmelzen |
JP2621069B2 (ja) * | 1991-07-16 | 1997-06-18 | 信越半導体株式会社 | Fz法による半導体シリコン単結晶の製造方法 |
JP3601280B2 (ja) | 1997-12-25 | 2004-12-15 | 信越半導体株式会社 | Fz法による半導体単結晶の製造方法 |
JP4016363B2 (ja) | 1998-07-28 | 2007-12-05 | 信越半導体株式会社 | 浮遊溶融帯域制御装置及び制御方法 |
KR100588425B1 (ko) | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
JP4760729B2 (ja) * | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
WO2008125104A1 (en) | 2007-04-13 | 2008-10-23 | Topsil Simiconductor Materials A/S | Method and apparatus for producing a single crystal |
JP4771989B2 (ja) * | 2007-04-25 | 2011-09-14 | Sumco Techxiv株式会社 | Fz法シリコン単結晶の製造方法 |
JP4831203B2 (ja) * | 2009-04-24 | 2011-12-07 | 信越半導体株式会社 | 半導体単結晶の製造方法および半導体単結晶の製造装置 |
DE102009051010B4 (de) * | 2009-10-28 | 2012-02-23 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
JP2011098847A (ja) * | 2009-11-04 | 2011-05-19 | Sumco Techxiv株式会社 | シリコンウェーハ及びその製造方法 |
CN102358951B (zh) * | 2011-10-11 | 2014-04-16 | 天津市环欧半导体材料技术有限公司 | 一种生产φ6英寸区熔气掺硅单晶的热系统及工艺 |
US9127377B2 (en) * | 2012-08-21 | 2015-09-08 | Babcock Noell Gmbh | Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material |
CN202808991U (zh) * | 2012-08-22 | 2013-03-20 | 北京京运通科技股份有限公司 | 一种区熔热场 |
DE102012108009B4 (de) | 2012-08-30 | 2016-09-01 | Topsil Semiconductor Materials A/S | Modellprädiktive Regelung des Zonenschmelz-Verfahrens |
US20150333193A1 (en) * | 2012-12-31 | 2015-11-19 | Memc Electronic Matrials S.P.A. | Indium-doped silicon wafer and solar cell using the same |
JP6233182B2 (ja) | 2014-05-15 | 2017-11-22 | 信越半導体株式会社 | 単結晶の製造方法及び単結晶製造装置 |
JP6248816B2 (ja) | 2014-06-05 | 2017-12-20 | 株式会社Sumco | 単結晶の製造方法 |
JP6318938B2 (ja) | 2014-07-17 | 2018-05-09 | 株式会社Sumco | 単結晶の製造方法及び製造装置 |
JP6365218B2 (ja) | 2014-10-17 | 2018-08-01 | 株式会社Sumco | 単結晶の製造方法及び製造装置 |
CN104357901A (zh) * | 2014-10-30 | 2015-02-18 | 内蒙古中环光伏材料有限公司 | 一种降低直拉单晶氧施主的方法 |
JP6756244B2 (ja) * | 2016-11-17 | 2020-09-16 | 信越半導体株式会社 | 半導体シリコン単結晶の製造方法 |
-
2018
- 2018-06-25 DE DE102018210317.8A patent/DE102018210317A1/de active Pending
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2019
- 2019-06-04 CN CN201980042984.0A patent/CN112334605B/zh active Active
- 2019-06-04 US US17/256,138 patent/US11788201B2/en active Active
- 2019-06-04 WO PCT/EP2019/064554 patent/WO2020001940A1/de unknown
- 2019-06-04 EP EP19728955.6A patent/EP3810834A1/de active Pending
- 2019-06-04 KR KR1020217001793A patent/KR102522807B1/ko active IP Right Grant
- 2019-06-04 JP JP2020572461A patent/JP7225270B2/ja active Active
- 2019-06-14 TW TW108120610A patent/TWI707991B/zh active
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US11788201B2 (en) | 2023-10-17 |
DE102018210317A1 (de) | 2020-01-02 |
KR102522807B1 (ko) | 2023-04-17 |
WO2020001940A1 (de) | 2020-01-02 |
CN112334605A (zh) | 2021-02-05 |
TWI707991B (zh) | 2020-10-21 |
CN112334605B (zh) | 2022-11-15 |
JP7225270B2 (ja) | 2023-02-20 |
US20210222319A1 (en) | 2021-07-22 |
KR20210020153A (ko) | 2021-02-23 |
TW202001008A (zh) | 2020-01-01 |
JP2021529149A (ja) | 2021-10-28 |
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