EP3703137A4 - SCHOTTKY BARRIER DIODE - Google Patents

SCHOTTKY BARRIER DIODE Download PDF

Info

Publication number
EP3703137A4
EP3703137A4 EP18870149.4A EP18870149A EP3703137A4 EP 3703137 A4 EP3703137 A4 EP 3703137A4 EP 18870149 A EP18870149 A EP 18870149A EP 3703137 A4 EP3703137 A4 EP 3703137A4
Authority
EP
European Patent Office
Prior art keywords
schottky barrier
barrier diode
diode
schottky
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18870149.4A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3703137A1 (en
Inventor
Jun Arima
Jun Hirabayashi
Minoru Fujita
Kohei Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tamura Corp
TDK Corp
Novel Crystal Technology Inc
Original Assignee
Tamura Corp
TDK Corp
Novel Crystal Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tamura Corp, TDK Corp, Novel Crystal Technology Inc filed Critical Tamura Corp
Publication of EP3703137A1 publication Critical patent/EP3703137A1/en
Publication of EP3703137A4 publication Critical patent/EP3703137A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
EP18870149.4A 2017-10-26 2018-09-26 SCHOTTKY BARRIER DIODE Pending EP3703137A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017206978A JP7045008B2 (ja) 2017-10-26 2017-10-26 ショットキーバリアダイオード
PCT/JP2018/035645 WO2019082580A1 (ja) 2017-10-26 2018-09-26 ショットキーバリアダイオード

Publications (2)

Publication Number Publication Date
EP3703137A1 EP3703137A1 (en) 2020-09-02
EP3703137A4 true EP3703137A4 (en) 2021-07-14

Family

ID=66247384

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18870149.4A Pending EP3703137A4 (en) 2017-10-26 2018-09-26 SCHOTTKY BARRIER DIODE

Country Status (5)

Country Link
US (1) US11626522B2 (ja)
EP (1) EP3703137A4 (ja)
JP (1) JP7045008B2 (ja)
CN (1) CN111279490B (ja)
WO (1) WO2019082580A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3823045A1 (en) 2019-11-14 2021-05-19 Flosfia Inc. Semiconductor device and system including semiconductor
JP7371484B2 (ja) * 2019-12-18 2023-10-31 Tdk株式会社 ショットキーバリアダイオード
JP7415537B2 (ja) * 2019-12-18 2024-01-17 Tdk株式会社 ショットキーバリアダイオード
CN114930501A (zh) 2020-01-10 2022-08-19 株式会社Flosfia 导电性金属氧化膜、半导体元件和半导体装置
JP7456220B2 (ja) 2020-03-19 2024-03-27 Tdk株式会社 ショットキーバリアダイオード
JP2022129917A (ja) * 2021-02-25 2022-09-06 Tdk株式会社 ショットキーバリアダイオード
JP2022129918A (ja) * 2021-02-25 2022-09-06 Tdk株式会社 ショットキーバリアダイオード
JP2023079552A (ja) * 2021-11-29 2023-06-08 Tdk株式会社 ジャンクションバリアショットキーダイオード
JP2023079551A (ja) * 2021-11-29 2023-06-08 Tdk株式会社 ショットキーバリアダイオード

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258861A (zh) * 2012-02-15 2013-08-21 立锜科技股份有限公司 沟槽肖特基势垒二极管及其制造方法
US20150333133A1 (en) * 2014-05-14 2015-11-19 Nxp B.V. Semiconductive device and associated method of manufacture
US20160254357A1 (en) * 2013-10-24 2016-09-01 Rohm Co., Ltd. Semiconductor device and semiconductor package

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176177A (ja) * 2000-12-07 2002-06-21 Denso Corp 半導体装置及びその製造方法
JP2009059912A (ja) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd ショットキーバリアダイオード
TWI382534B (zh) * 2009-05-13 2013-01-11 Anpec Electronics Corp 整合金氧半導體場效電晶體與蕭特基二極體之半導體元件及其製作方法
JP5531620B2 (ja) * 2010-01-05 2014-06-25 富士電機株式会社 半導体装置
TWM406804U (en) * 2011-01-31 2011-07-01 Taiwan Semiconductor Co Ltd Structure of termination trench region for Schottky diode
US9142623B2 (en) * 2011-09-08 2015-09-22 Tamura Corporation Substrate for epitaxial growth, and crystal laminate structure
CN104969413B (zh) * 2013-03-01 2017-09-29 株式会社藤仓 集成天线及其制造方法
JP6296445B2 (ja) * 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
JP6022082B2 (ja) * 2014-07-11 2016-11-09 新電元工業株式会社 半導体装置及び半導体装置の製造方法
CN108899359A (zh) * 2014-07-22 2018-11-27 Flosfia 株式会社 结晶性半导体膜和板状体以及半导体装置
TW201614798A (en) * 2014-10-01 2016-04-16 Beyond Innovation Tech Co Ltd Monolithic merged PIN Schottky diode structure
JP6524666B2 (ja) * 2015-01-15 2019-06-05 富士電機株式会社 半導体装置
DE102015103211B4 (de) * 2015-03-05 2018-05-30 Infineon Technologies Austria Ag Verfahren zum herstellen einer halbleitervorrichtung mit ersten und zweiten feldelektrodenstrukturen
US9716187B2 (en) * 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
JP2017045969A (ja) 2015-08-28 2017-03-02 株式会社タムラ製作所 ショットキーバリアダイオード
JP7116409B2 (ja) * 2017-02-27 2022-08-10 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258861A (zh) * 2012-02-15 2013-08-21 立锜科技股份有限公司 沟槽肖特基势垒二极管及其制造方法
US20160254357A1 (en) * 2013-10-24 2016-09-01 Rohm Co., Ltd. Semiconductor device and semiconductor package
US20150333133A1 (en) * 2014-05-14 2015-11-19 Nxp B.V. Semiconductive device and associated method of manufacture

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SASAKI KOHEI ET AL: "First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes", IEEE ELECTRON DEVICE LETTERS, IEEE, USA, vol. 38, no. 6, 1 June 2017 (2017-06-01), pages 783 - 785, XP011649879, ISSN: 0741-3106, [retrieved on 20170522], DOI: 10.1109/LED.2017.2696986 *
See also references of WO2019082580A1 *

Also Published As

Publication number Publication date
US11626522B2 (en) 2023-04-11
JP2019079984A (ja) 2019-05-23
CN111279490B (zh) 2023-06-20
CN111279490A (zh) 2020-06-12
US20210167225A1 (en) 2021-06-03
WO2019082580A1 (ja) 2019-05-02
JP7045008B2 (ja) 2022-03-31
EP3703137A1 (en) 2020-09-02

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