EP3618107B1 - Keramische leiterplatte, verfahren zur herstellung einer keramischen leiterplatte und modul mit keramischer leiterplatte - Google Patents

Keramische leiterplatte, verfahren zur herstellung einer keramischen leiterplatte und modul mit keramischer leiterplatte Download PDF

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EP3618107B1
EP3618107B1 EP18792227.3A EP18792227A EP3618107B1 EP 3618107 B1 EP3618107 B1 EP 3618107B1 EP 18792227 A EP18792227 A EP 18792227A EP 3618107 B1 EP3618107 B1 EP 3618107B1
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circuit substrate
bonding
ceramic
ceramic circuit
minutes
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French (fr)
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EP3618107A1 (de
EP3618107A4 (de
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Yusaku Harada
Akimasa Yuasa
Takahiro Nakamura
Shuhei Morita
Kouji Nishimura
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Denka Co Ltd
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Denka Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562—Heating rate
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    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
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    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
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    • C04B2237/368—Silicon nitride
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    • C04B2237/40—Metallic
    • C04B2237/407—Copper
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
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    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Definitions

  • the present invention pertains to a ceramic circuit substrate, a manufacturing method therefor, and a power module using the same.
  • Ceramic circuit substrates in which metal circuit substrates and metal heat dissipation boards are bonded to surfaces of a ceramic substrate are used in power modules directed to railways, vehicles, and industrial machines which require high voltage and high current operation.
  • the amount of heat from semiconductor elements has continued to grow and ceramic substrates formed from a silicon nitride sintered body or an aluminum nitride sintered body having high thermal conductivity are used to efficiently dissipate this heat.
  • Thermal stress during heat cycles is affected not only by the difference in the coefficients of thermal expansion of ceramic substrates and metal plates, but also by the mechanical properties possessed by the metal plates themselves, mainly tensile strength and yield strength, so if a bonding brazing material component is diffused in a metal plate, the property of ready plastic deformation is lost and residual stress forms, damaging the ceramic substrate.
  • bonding at a low temperature and for a short time is necessary, but rapid temperature rises are difficult in conventional bonding in vacuum and temperature distributions readily occur in bonding ovens, and it is difficult to manufacture high-reliability ceramic circuit substrates with good productivity.
  • Patent Document 1 investigates controlling the thickness of a brazing material layer by forming a layer containing Ag and a nitride-forming element on at least one of a bonding surface of a ceramic substrate and a bonding surface of a copper plate and then bonding the surfaces.
  • the bonding temperature is high at no less than 790°C, so some of the Ag that is the brazing material component further diffuses in the copper plate thickness direction beyond the continuously formed brazing material layer and changes the mechanical properties of the copper plate.
  • the controlled thickness of the brazing material layer is a mean value measured in multiple areas excluding non-continuous brazing material layer areas, so cracks sometimes developed in the ceramic substrate at portions at which the brazing material layer was locally thick.
  • Patent Document 2 investigated bonding at 750-850°C in a nitrogen atmosphere using a brazing material comprising zirconium, but due to the zirconium, which was added in large amounts to ensure bondability, the brazing material layer became fragile and there were problems such as the heat cycle resistance properties falling.
  • JP-2016-169111 discloses a ceramic circuit substrate for a power module.
  • the objective of the present invention is to provide a ceramic circuit substrate with excellent heat cycle resistance characteristics, a manufacturing method therefor, and a module using the same.
  • the present invention employs the following means to solve the abovementioned problem.
  • the ceramic circuit substrate of the present invention has excellent heat cycle resistance characteristics and thus high-performance power modules can be provided in a productive manner.
  • the ceramic circuit substrate of the present invention is a ceramic circuit substrate formed by bonding a copper circuit substrate to one surface of a ceramic substrate and bonding a copper heat dissipation board to the other surface via a brazing material comprising Ag, Cu, and an active metal.
  • the ceramic circuit substrate of the present invention is characterized by the bond void fraction being no greater than 1.0%.
  • the bond void fraction is an indicator that evaluates the bond state between the ceramic substrate and the copper plate and can be determined by measuring the surface area of the bond voids of the ceramic circuit substrate observed with an ultrasonic flaw detector and dividing by the surface area of the copper circuit pattern.
  • the ceramic circuit substrate of the present invention is characterized by the diffusion distance of the Ag, which is a brazing material component, being 5-20 ⁇ m.
  • the diffusion distance of the Ag is the distance between the surface of the ceramic substrate and the portion at which the Ag diffused furthest from the surface of the ceramic substrate toward the surface of the copper plate (the direction perpendicular to the surface of the ceramic substrate) and is not always identical to the thickness of the continuous brazing material layer.
  • 3 fields of view at a magnification of 500 ⁇ in a scanning electron microscope are randomly selected from a cross-section of the ceramic circuit substrate (a 250 ⁇ m range in the horizontal direction of the bonding interface) such that the ranges do not overlap, and the Ag diffusion distance is the largest diffusion distance of the AG among those measured in the fields of view.
  • the present inventors discovered that the occurrence of cracks in ceramic substrates and separation of copper plates can be suppressed not by controlling the thickness of the brazing material layer, but by controlling the diffusion of Ag toward the copper plate to alleviate the thermal stress generated during heat cycles. By setting the diffusion distance of the Ag to no less than 5 ⁇ m, insufficient bonding between the ceramic substrate and the copper plate and separation of the copper plate during heat cycles can be suppressed.
  • the diffusion distance of the Ag is no greater than 15 ⁇ m in order to reduce variation in quality.
  • the diffusion distance of the Ag can be adjusted by means of the bonding temperature and bonding time, the amount of the brazing material applied, etc.
  • a brazing material comprising Ag, Cu, and an active metal is used in bonding the ceramic circuit substrate of the present invention.
  • the compositional ratio of the Ag and Cu is preferably set to that which readily generates a eutectic composition and considering the penetration of copper components from the copper plate, it is preferable that there are 70-95 parts by mass of Ag and 5-30 parts by mass of Cu in a total of 100 parts by mass of the Ag and Cu.
  • the active metal is at least one metal selected from titanium, zirconium, hafnium, niobium, etc.
  • the content of the active metal is preferably 0.5-10 parts by mass relative to the total 100 parts by mass of the Ag and Cu. If the content of the active metal is less than 0.5 parts by mass, wettability of the ceramic substrate and the brazing material falls and bond voids readily occur. If the content of the active metal exceeds 10 parts by mass, a fragile nitride layer of the active metal forms in excess at the bonding interface and heat cycle resistance falls.
  • a hydride of the active metal can also be used therein.
  • hydrogen in the hydride can suppress oxidation of the active metal by the bonding atmosphere, increase reactivity with the ceramic substrate, and improve bondability.
  • cases with conditions using titanium as the active metal shall be described as examples, but the present invention is not limited thereto.
  • Components other than Ag, Cu, and the active metal can also be added to the brazing material.
  • adding Sn to lower the melting temperature of the brazing material is preferable. By lowering the melting temperature of the brazing material, the diffusion distance of the Ag becomes readily controlled.
  • the Sn content is preferably 0.1-15 parts by mass relative to the total 100 parts by mass of the Ag and Cu. If the Sn content is less than 0.1 parts by mass, the effect thereof is small and if the content exceeds 15 parts by mass, issues such as the brazing material flowing out when bonding occur and the heat cycle resistance characteristics fall.
  • An alloy film formed from the above composition, powders of each composition, a powder in which a portion of the composition is alloyed, a powder in which the entire composition is alloyed, etc. can be used in the brazing material.
  • a powder a paste in which the powder is mixed with a bonding agent, plasticizing agent, a dispersing agent, a dispersion medium, etc. can be produced and applied to the ceramic substrate or copper plate.
  • the application method for the brazing material is not particularly limited and publicly known application methods capable of uniformly applying a fixed amount such as screen printing methods, roll coater methods, etc. can be employed.
  • the amount of the brazing material applied is preferably 5-10 mg/cm 2 after removal of the dispersion medium.
  • the amount of the brazing material applied By setting the amount of the brazing material applied to no less than 5 mg/cm 2 , the ready formation of bond voids can be suppressed and by setting the amount to no greater than 10 mg/cm 2 , lengthening of the diffusion distance of the Ag and a decrease in the heat cycle resistance characteristics can be suppressed.
  • the present inventors discovered that preventing the consumption of the active metal in bonding other than reacting with the ceramic substrate and bonding at a low temperature and for a short amount of time are effective.
  • the heating time By setting the heating time to no less than 5 minutes, organic substances such as the bonding agent or plasticizing agent in the brazing material paste are not substantially pyrolyzed and residual carbon components that cause bondability between the ceramic substrate and the copper plate to fall can be suppressed.
  • a temperature range no less than 400°C effects on bonding becoming small due to the reaction speed with the active metal being slow can be suppressed.
  • a temperature range no greater than 700°C reaction of the active metal due to the atmosphere not readily occurring because of part of the brazing material beginning to melt can be suppressed.
  • the manufacturing method for a ceramic circuit substrate in one embodiment of the present invention is characterized by bonding in a continuous heating furnace in a nitrogen atmosphere.
  • the continuous heating furnace here is a heating furnace capable of continuously conveying, with a pusher, belt, roller, etc., a ceramic substrate or copper plate to which a brazing material has been applied, a bonding jig, etc. and thermally treating the same.
  • the continuous heating furnace preferably has a structure capable of supplying gas to the interior of the furnace and exhausting gas to the exterior the furnace.
  • the gas supplied to the interior of the furnace is preferably nitrogen, argon, hydrogen, etc. and among these, is preferably nitrogen from the viewpoint of productivity.
  • the interior of the continuous heating furnace is preferably made a non-oxidizing atmosphere having an oxygen concentration no greater than 50 ppm. By setting the oxygen concentration to no greater than 50 ppm, the brazing material becoming readily oxidized can be suppressed.
  • bonding is performed by applying pressure no less than 1.0 MPa to a laminated body in which the ceramic substrate and copper plate are stacked by using a weight, jig, etc.
  • Publicly known methods can be applied as the heating method and it is preferable that a resistance heating system such as carbon or molybdenum, a highfrequency heating system, a microwave heating system, etc. can be used as the heating source.
  • the laminated body in which the ceramic substrate and the copper plate are stacked is loaded into the continuous heating furnace, which has a non-oxidizing atmosphere and is kept at a high temperature, and the speed at which the temperature of the laminated body rises can arbitrarily be controlled by adjusting the heat setting temperature and the conveyance speed. It therefore becomes possible to more strictly control the bonding temperature and bonding time than in conventional batch vacuum furnaces.
  • bonding by maintaining a bonding temperature of 720-800°C for 5-30 minutes, bonding at a lower temperature and for a shorter time than is conventional is possible, so residual stress after bonding due to the difference in coefficients of thermal expansion of the ceramic substrate and the copper plate falls and furthermore, the diffusion of Ag is suppressed, especially improving heat cycle resistance characteristics.
  • the bonding temperature By setting the bonding temperature to no less than 720°C and the maintenance time to no less than 5 minutes, it is possible to suppress the bonding voids occurring due to insufficient melting of the brazing material. By setting the bonding temperature to no greater than 800°C and the maintenance time to within 30 minutes, the diffusion distance of Ag lengthening, cracks occurring in the ceramic substrate, and the copper plate separating during heat cycling can be suppressed. It is more preferable that the maintenance time be no longer than 20 minutes in order to enhance the heat cycle resistance characteristics. After bonding, the ceramic circuit substrate is discharged from the bonding furnace and cooled. The cooling speed can also be adjusted by changing the heat setting temperature in the continuous heating furnace.
  • the ceramic substrate used in the ceramic circuit substrate of the present invention is preferably a silicon nitride substrate or an aluminum nitride substrate having excellent insulation and heat dissipation.
  • the thickness of the ceramic substrate is not particularly limited, but heat resistance increasing is suppressed by setting the thickness to no greater than 1.5 mm and durability being lost is suppressed by setting the thickness to no less than 0.2 mm, so a thickness of 0.2-1.5 mm is preferred.
  • the copper plate used in the ceramic circuit substrate of the present invention is copper or an alloy comprising copper as a component.
  • the type and thickness are not particularly limited, but the purity is preferably no less than 99.5% because of effects on reactivity with the brazing material and the heat cycle resistance characteristics.
  • the circuit pattern forming method for the ceramic circuit substrate as in the present invention is not particularly limited and can be carried out by a method comprising masking the copper plate bonded to the ceramic substrate with etching resist in a desired circuit shape and then removing the unnecessary portions by etching, a method comprising bonding, to a ceramic substrate, a copper plate into which a circuit shape has already been punched, etc.
  • the etching method is also not particularly limited and etching liquids such as ferric chloride solution, cupric chloride solution, sulfuric acid, and hydrogen peroxide solution can be used. Among these, the use of ferric chloride solution or cupric chloride solution is preferred.
  • Electroless Ni plating, Au flash plating, substitution type Ag plating, etc. can be performed, as necessary, on the copper plate surface of the ceramic circuit substrate of the present invention.
  • An anti-corrosive agent can be applied after surface smoothing by grinding, physical polishing, chemical polishing, etc. without plating.
  • the ceramic circuit substrate of the present invention can be applied to vehicle-mounted power modules, which demand strict reliability.
  • a copper plate for circuit-forming was stacked on one surface of the silicon nitride substrate and a copper plate for forming a heat dissipation board (both are 0.8 mm thick oxygen-free copper plates) was stacked on the other surface of the silicon nitride substrate and the stack was loaded into a conveying roller-type continuous heating furnace (opening dimensions: W 500 mm ⁇ H 70 mm, furnace length: 3 m) in a nitrogen atmosphere.
  • the conveyance speed was set to 10 cm/minute and the silicon nitride substrate and the copper plates were bonded by adjusting the set temperature of the heater so as to achieve the bonding conditions shown in Table 1.
  • Etching resist was applied to the bonded copper plate and a circuit pattern was formed by etching with ferric chloride solution.
  • a brazing material layer and nitride layer were removed with an ammonium fluoride/hydrogen peroxide solution.
  • Ceramic circuit substrates were obtained in the same manner as Example 1 other than having changed the bonding atmosphere, the heating time in the temperature range of 400-700°C, the bonding temperature, and the maintenance time as shown in Table 1. The measurement results are shown in Table 1.
  • a ceramic circuit substrate was obtained in the same manner as Example 1 other than not adding the Sn powder and having changed the bonding temperature and maintenance time as shown in Table 1. The measurement results are shown in Table 1.
  • a ceramic circuit substrate was obtained in the same manner as Example 1 other than having changed the amount of the TiH 2 powder added to 1.0 part by mass and having changed the heating time in the temperature range of 400-700°C as shown in Table 1. The measurement results are shown in Table 1.
  • a ceramic circuit substrate was obtained in the same manner as in Example 1 other than having bonded with the bonding conditions in a conventional vacuum atmosphere batch furnace. The measurement results are shown in Table 1.
  • a ceramic circuit substrate was obtained in the same manner as in Example 1 other than not adding the TiHz powder.
  • the ceramic circuit substrates of the present invention have low bond voids at no greater than 1.0%, excellent bondability, low crack rates after heat cycles at no greater than 1.0%, and excellent heat cycle resistance characteristics and high performance power modules can be provided in a productive manner.
  • the ceramic circuit substrate of the present invention can suitably be used in vehicle-mounted power modules.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Claims (6)

  1. Keramisches Schaltungssubstrat, gebildet durch Verbinden eines keramischen Substrats und einer Kupferplatte über ein Hartlötmaterial, das Ag, Cu und ein aktives Metall umfasst, wobei gilt:
    ein Porenanteil der Bindung ist nicht größer als 1,0%,
    ein Abstand zwischen der Oberfläche des Keramiksubstrats und dem Abschnitt, an dem das Ag am weitesten von der Oberfläche des Keramiksubstrats diffundiert ist, beträgt 5-20 µm,
    eine Rissrate nach Wärmezyklen beträgt nicht mehr als 1,0%,
    der Abstand wird gemessen, indem bei einer 500-fachen Vergrößerung in einem Rasterelektronenmikroskop drei zufällig aus einem Querschnitt des keramischen Schaltungssubstrats ausgewählte Sichtfelder mit einem Bereich von 250 µm in der horizontalen Richtung der Klebeschnittstelle betrachtet werden, so dass sich die Bereiche nicht überschneiden, und ist der größte Diffusionsabstand des Ag unter den in den Sichtfeldern gemessenen,
    der Porenanteil der Bindung wird bestimmt durch Messen der Oberfläche der mit einem Ultraschallprüfgerät beobachteten Poren der Bindung des keramischen Schaltungssubstrats und Dividieren durch die Oberfläche des Kupferschaltungsmusters, und
    die Rissrate wird gemessen, indem mit einem Wärmezyklus, definiert als 5 Minuten auf einer Heizplatte bei 350°C, 5 Minuten bei 25°C, 5 Minuten bei -78°C in Trockeneis und 5 Minuten bei 25°C, 10 kontinuierliche Zyklen auf dem Keramikschaltungssubstrat durchgeführt werden und die Kupferplatte, die Lotschicht und die Nitridschicht durch Ätzen entfernt werden, Erfassen der auf der Oberfläche des Keramiksubstrats erzeugten horizontalen Risse mit einer Auflösung von 600 dpi × 600 dpi mit einem Scanner und Berechnen der Rissrate durch Binarisierung mit einem Schwellenwert von 140 mit der Bildanalysesoftware GIMP2 und anschließendes Dividieren der horizontalen Rissfläche durch die Schaltkreismusterfläche.
  2. Keramisches Schaltungssubstrat nach Anspruch 1, wobei das keramische Substrat Siliziumnitrid oder Aluminiumnitrid umfasst.
  3. Keramisches Schaltungssubstrat nach Anspruch 1 oder 2, wobei das Hartlötmaterial Sn umfasst.
  4. Herstellungsverfahren für das keramische Schaltungssubstrat nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die Aufheizzeit in einem Temperaturbereich von 400 bis 700°C in einem Verfahren zur Erhöhung der Temperatur auf eine Verbindungstemperatur 5 bis 30 Minuten beträgt und die Verbindung durch Aufrechterhaltung der Verbindungstemperatur bei 720 bis 800°C für 5 bis 30 Minuten durchgeführt wird.
  5. Herstellungsverfahren für ein keramisches Schaltungssubstrat nach Anspruch 4, gekennzeichnet durch Verbinden in einem Durchlaufofen unter Stickstoffatmosphäre.
  6. Leistungsmodul, das das keramische Schaltungssubstrat nach einem der Ansprüche 1-3 verwendet.
EP18792227.3A 2017-04-25 2018-04-24 Keramische leiterplatte, verfahren zur herstellung einer keramischen leiterplatte und modul mit keramischer leiterplatte Active EP3618107B1 (de)

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JP6870767B2 (ja) * 2019-09-02 2021-05-12 三菱マテリアル株式会社 銅／セラミックス接合体、及び、絶縁回路基板
WO2021111508A1 (ja) * 2019-12-03 2021-06-10 日本碍子株式会社 接合基板及び接合基板の製造方法
CN114982388A (zh) * 2020-01-23 2022-08-30 电化株式会社 陶瓷-铜复合体、及陶瓷-铜复合体的制造方法
JPWO2021166762A1 (de) 2020-02-17 2021-08-26
EP4124184A4 (de) 2020-03-18 2024-04-17 Kabushiki Kaisha Toshiba Laminat, keramik-kupferleiterplatte, verfahren zur herstellung eines laminats und verfahren zur herstellung einer keramik-kupferleiterplatte
CN115667186A (zh) * 2020-05-20 2023-01-31 株式会社东芝 接合体、陶瓷铜电路基板、及半导体装置
TWI734528B (zh) * 2020-06-16 2021-07-21 禾伸堂企業股份有限公司 複合基板
JP2022020925A (ja) * 2020-07-21 2022-02-02 日本特殊陶業株式会社 配線基板
WO2022024832A1 (ja) 2020-07-27 2022-02-03 株式会社 東芝 接合体、回路基板、半導体装置、及び接合体の製造方法
CN116134607A (zh) * 2020-07-27 2023-05-16 株式会社东芝 接合体、电路基板、半导体装置及接合体的制造方法
CN115989579A (zh) 2020-10-07 2023-04-18 株式会社东芝 接合体、陶瓷电路基板及半导体装置
CN112679220A (zh) * 2020-12-30 2021-04-20 中国电子科技集团公司第十三研究所 氮化硅陶瓷覆铜基板及其制备方法
JPWO2022244769A1 (de) * 2021-05-19 2022-11-24
EP4112586A1 (de) * 2021-06-29 2023-01-04 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung eines metall-keramik-substrats mittels einem durchlaufofen
EP4112587A1 (de) * 2021-06-29 2023-01-04 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung eines metall-keramik-substrats mittels schnellem heizen
JP2023020265A (ja) * 2021-07-30 2023-02-09 三菱マテリアル株式会社 銅／セラミックス接合体、および、絶縁回路基板

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JPH11157952A (ja) 1997-11-27 1999-06-15 Denki Kagaku Kogyo Kk 接合体の製造方法
JP4674983B2 (ja) * 2001-03-13 2011-04-20 電気化学工業株式会社 接合体の製造方法
JP2003188310A (ja) 2001-12-18 2003-07-04 Denki Kagaku Kogyo Kk 電極端子付き回路基板の製造方法
KR102078891B1 (ko) 2012-02-01 2020-02-18 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판, 히트 싱크가 부착된 파워 모듈용 기판, 파워 모듈, 파워 모듈용 기판의 제조 방법, 및 동 부재 접합용 페이스트
JP2013179263A (ja) 2012-02-01 2013-09-09 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
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CN110537256A (zh) 2019-12-03
US20200128664A1 (en) 2020-04-23
KR102516917B1 (ko) 2023-03-31
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EP3618107A4 (de) 2020-04-08
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