EP3454382B1 - Verfahren zur herstellung einer leuchtdiode - Google Patents

Verfahren zur herstellung einer leuchtdiode Download PDF

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Publication number
EP3454382B1
EP3454382B1 EP18190953.2A EP18190953A EP3454382B1 EP 3454382 B1 EP3454382 B1 EP 3454382B1 EP 18190953 A EP18190953 A EP 18190953A EP 3454382 B1 EP3454382 B1 EP 3454382B1
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EP
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Prior art keywords
along
lines
laser beam
interval
light
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English (en)
French (fr)
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EP3454382A1 (de
Inventor
Kazuki Yamaguchi
Haruki Takeda
Yoshitaka Sumitomo
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Definitions

  • Embodiments described herein relate to a method of manufacturing a light-emitting element.
  • Forming element separation lines by performing laser irradiation in a method of manufacturing a light-emitting element in which a compound semiconductor to serve as a light-emitting layer is stacked on a substrate is proposed.
  • EP 2 402 984 A1 discloses a method for manufacturing a semiconductor element which has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line.
  • JP 2015 130470 A discloses a method for manufacturing a group III nitride semiconductor light-emitting element comprising a laser irradiation process of forming a row Al comprising a plurality of modified parts R1 on respective positions each at a first depth X1 from a semiconductor layer formation surface Sal of a sapphire wafer Sa and forming a row A2 comprising a plurality of modified parts R2 on respective positions each at a second depth X2 from the semiconductor layer formation surface Sal of the sapphire wafer Sa.
  • the first depth X1 of the row Al is within a range of 50 ⁇ m or more and 70 ⁇ m or less.
  • a pitch interval of the modified parts R1 in the row Al is within a range of 2.5 ⁇ m or more and 15 ⁇ m or less.
  • the second depth X2 of the row A2 is deeper than the depth X1 of the row Al.
  • JP 2015 130470 A solves the problem of providing a group III nitride semiconductor light-emitting element and a method for manufacturing the same, which achieve improvement in productivity of the semiconductor light-emitting element by decreasing a width of a groove between adjacent semiconductor layers.
  • US 2017/200855 Al discloses a method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice.
  • the method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
  • Certain embodiments of the present invention provide a method of manufacturing a light emitting device that allows for increasing productivity.
  • a method of manufacturing a light-emitting element includes forming a plurality of modified regions inside a substrate of a wafer by irradiating the substrate with a laser beam, the wafer comprising: the substrate having a first surface and a second surface, and a semiconductor structure disposed on the second surface of the substrate; and separating the wafer into a plurality of light-emitting elements after the step of irradiating laser beam.
  • the step of forming the plurality of modified regions includes: scanning the laser beam along a plurality of first lines, the plurality of first lines extending in a first direction and being arranged in a second direction, the first direction being parallel to the first surface, the second direction intersecting the first direction and being parallel to the first surface, and scanning the laser beam along a plurality of second lines, the plurality of second lines extending in the second direction and being arranged in the first direction.
  • a first interval, which is an interval between the plurality of first lines in the second direction, is larger than a second interval, which is an interval of the plurality of second lines in the first direction.
  • the laser beam is irradiated at a plurality of first positions that are arranged along the first direction, and a first irradiation interval, which is an interval between the plurality of first positions along the first direction, is 2.0 ⁇ m or less.
  • the step of separating the wafer includes separating the wafer into a plurality of bars along the plurality of second lines. After separating the wafer into the plurality of bars, separating the bars into the plurality of light-emitting elements along the plurality of first lines.
  • a method of manufacturing a light emitting device according to one embodiment of the present invention allows for increasing productivity.
  • FIG. 1 is a flowchart illustrating a method of manufacturing a light-emitting element according to a first embodiment.
  • FIG. 2 and FIG. 3 are schematic views illustrating a wafer used in the method of manufacturing the light-emitting element according to the present embodiment.
  • FIG. 2 is a cross-sectional view taken along a line II-II of FIG. 3.
  • FIG. 3 is a plan view as viewed along arrow AR of FIG. 2 .
  • the method of manufacturing the light-emitting element according to the present embodiment includes irradiating a laser beam (step S110) and separating (step S120).
  • the step of irradiating a laser beam includes carrying out a first irradiation (step S111) and carrying out a second irradiation (step S112).
  • the step of separating includes carrying out a first separation (step S121) and carrying out a second separation (step S122).
  • a laser beam is irradiated on a wafer in the step of irradiating a laser beam.
  • An example of the wafer will be described below.
  • the wafer 50W includes a substrate 50 and a semiconductor structure 51.
  • the substrate 50 has a first surface 50a and a second surface 50b.
  • the second surface 50b is the surface on the side opposite to the first surface 50a.
  • the semiconductor structure 51 is disposed on the second surface 50b.
  • the semiconductor structure 51 includes, for example, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.
  • the n-type semiconductor layer is disposed between the p-type semiconductor layer and the substrate 50.
  • the active layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer.
  • the semiconductor structure 51 includes, for example, a nitride semiconductor such as InxAlyGa1-x-yN (0 ⁇ x, 0 ⁇ y, and x + y ⁇ 1), etc.
  • the peak wavelength of light emitted by the active layer is, for example, in a range of 360 nm to 650 nm.
  • the direction from the second surface 50b toward the first surface 50a is referred to as a "Z-axis direction.”
  • a direction perpendicular to the Z-axis direction is referred to as an "X-axis direction.”
  • a direction perpendicular to the Z-axis direction and the X-axis direction is referred to as a "Y-axis direction.”
  • the first surface 50a and the second surface 50b extend along the X-Y plane.
  • the Z-axis direction corresponds to a thickness direction (e.g., the depth direction) of the substrate 50.
  • the semiconductor structure 51 includes, for example, a plurality of regions 51r.
  • the plurality of regions 51r each correspond to one light-emitting element.
  • the plurality of regions 51r are arranged in a first direction D1 and a second direction D2.
  • the first direction D1 is a direction parallel to the first surface 50a.
  • the second direction D2 intersects the first direction D1 and is parallel to the first surface 50a.
  • the second direction D2 is perpendicular to, for example, the first direction D1.
  • the first direction D1 is aligned with the Y-axis direction.
  • the second direction D2 is aligned with the X-axis direction.
  • the substrate 50 is made of sapphire (e.g., it is a c-plane sapphire substrate).
  • the first surface 50a may be tilted with respect to the c-plane.
  • the first direction D1 is aligned with the a-axis of the sapphire substrate.
  • the second direction D2 is aligned with the m-axis of the sapphire substrate.
  • the substrate 50 includes an orientation flat 55.
  • a direction in which the orientation flat 55 extends is aligned with the second direction D2 of the wafer 50W.
  • any appropriate relationship is given between the first direction D1 and a direction in which the orientation flat 55 extends.
  • any appropriate relationship is given between the second direction D2 and the direction in which the orientation flat 55 extends.
  • a laser beam is irradiated on the wafer 50W having such a structure.
  • the wafer 50W is separated along the boundaries of the plurality of regions 51r.
  • a plurality of light-emitting elements is obtained from the plurality of regions 51r.
  • FIG. 4 is a schematic view illustrating a portion of the method of manufacturing the light-emitting element according to the present embodiment.
  • FIG. 4 illustrates the irradiation of the laser beam.
  • a laser beam 61 is irradiated on the substrate 50 of the wafer 50W.
  • the laser beam 61 enters the substrate 50 through the first surface 50a.
  • the laser beam 61 is emitted in a pulse form.
  • a Nd:YAG laser, a titanium sapphire laser, a Nd:YVO4 laser, a Nd:YLF laser, or the like is used as the laser light source.
  • a wavelength of the laser beam 61 is a wavelength of a light passing through the substrate 50.
  • Example of the laser beam 61 includes a laser beam having a peak wavelength in the range of 800 nm to 1200 nm.
  • the laser beam 61 is scanned along a direction parallel to the X-Y plane.
  • the relative positional relationship between the laser beam 61 and the substrate 50 is shifted along directions parallel to the X-Y plane.
  • the positional relationship along the Z-axis direction (i.e., the positional relationship based on the substrate 50) of the light condensing point of the laser beam 61 may be shifted.
  • the laser beam 61 is irradiated separately along a single direction aligned with the first surface 50a of the substrate 50.
  • the plurality of portions where the laser beam 61 is irradiated are separated from each other along the single direction.
  • the plurality of portions where the laser beam 61 is irradiated are aligned at an interval (i.e., a laser irradiation interval Lp).
  • the laser irradiation interval Lp corresponds to the interval between the shots of the laser beam 61.
  • a plurality of modified regions 53 are formed inside the substrate 50 by the irradiation of the laser beam 61.
  • the laser beam 61 is concentrated at an inner portion of the substrate 50.
  • the energy of the laser beam 61 is concentrated at a designated depth inside the substrate 50. Accordingly, the plurality of modified regions 53 are formed.
  • the interval of the light condensing points of the laser beam 61 when forming the plurality of modified regions 53 corresponds to the laser irradiation interval Lp.
  • the modified regions 53 are, for example, regions embrittled due to the laser irradiation inside the substrate 50.
  • a crack propagates from the plurality of modified regions 53.
  • the crack extends in the Z-axis direction of the substrate 50. Separation of the substrate 50 starts from the crack.
  • a force e.g., a load, an impact, or the like
  • the substrate 50 is separated based on the crack.
  • the laser beam 61 is irradiated on the substrate 50, and the plurality of modified regions 53 are formed inside the substrate 50.
  • the laser irradiation is performed along the first direction D1 and the second direction D2.
  • step S120 the wafer 50W is separated into a plurality of light-emitting elements after the step of irradiating a laser beam.
  • the wafer 50W is separated into the plurality of light-emitting elements by performing separation along two directions.
  • FIG. 5 is a schematic plan view illustrating a portion of the method of manufacturing the light-emitting element according to the present embodiment.
  • FIG. 5 illustrates the step of carrying out the first irradiation (step S111). As shown in FIG. 5 , the laser beam 61 is scanned along a plurality of first lines L1 in step of carrying out the first irradiation.
  • the plurality of first lines L1 extend in the first direction D1 and are arranged in the second direction D2. As described above, the first direction D1 is parallel to the first surface 50a. The second direction D2 intersects the first direction D1 and is parallel to the first surface 50a. The plurality of first lines L1 are arranged at a first interval P1. The first interval P1 is a distance along the second direction D2 between two first lines L1 adjacent to each other in the second direction D2.
  • the plurality of first lines L1 are aligned with the boundaries between the plurality of regions 51r arranged in the second direction D2 (referring to FIG. 3 ).
  • the laser beam 61 is irradiated at plurality of first positions 61a in the irradiation of the laser beam 61 along one of the plurality of first lines L1.
  • the plurality of first positions 61a are arranged along the first direction D1.
  • the interval of the plurality of first positions 61a corresponds to a first irradiation interval Lp1.
  • the first irradiation interval Lp1 is the distance along the first direction D1 between two first positions 61a adjacent to each other in the first direction D1.
  • the first irradiation interval Lp1 is, in accordance with the invention, 2.0 ⁇ m or less. With such an interval, a breaking strength in the step of separating process can be increased sufficiently as described below in detail.
  • FIG. 6 is a schematic plan view illustrating a part of the method of manufacturing the light-emitting element according to the present embodiment.
  • FIG. 6 illustrates the step of carrying out second irradiation (step S112). As shown in FIG. 6 , the laser beam 61 is scanned along plurality of second lines L2 in the step of carrying out second irradiation.
  • the plurality of second lines L2 extend in the second direction D2.
  • the plurality of second lines L2 are arranged at a second interval P2 in the first direction D1.
  • the second interval P2 is the distance along the first direction D1 between two second lines L2 adjacent to each other in the first direction D1.
  • the plurality of second lines L2 are aligned with the boundaries between the plurality of regions 51r arranged in the first direction D1 (referring to FIG. 3 ).
  • the laser beam 61 is irradiated at a plurality of second positions 61b in the irradiation of the laser beam 61 along each of the plurality of second lines L2 in the second irradiation process.
  • the plurality of second positions 61b are arranged along the second direction D2.
  • the interval of the plurality of second positions 61b corresponds to a second irradiation interval Lp2.
  • the second irradiation interval Lp2 is the distance along the second direction D2 between two second positions 61b adjacent to each other in the second direction D2.
  • the first irradiation interval Lp1 is smaller than the second irradiation interval Lp2. This allows for reducing unintentional separation of the wafer in the step of separating, as described below.
  • the first interval P1 (referring to FIG. 5 ) is larger than the second interval P2 (referring to FIG. 6 ).
  • FIG. 7 is a schematic plan view illustrating a part of the method of manufacturing the light-emitting element according to the present embodiment.
  • FIG. 7 illustrates the step of carrying out the first separation.
  • the wafer 50W is separated into plurality of bars 52 along the plurality of second lines L2.
  • the wafer 50W is separated into the plurality of bars 52 by applying a load to the wafer 50W along the second lines L2 using a blade.
  • the plurality of regions 51r are arranged in the second direction D2.
  • FIG. 8 is a schematic plan view illustrating a part of the method of manufacturing the light-emitting element according to the present embodiment.
  • FIG. 8 illustrates the step of carrying out second separation.
  • the second separation is carried out after carrying out the first separation.
  • the bars 52 are separated into a plurality of light-emitting elements 51e along the plurality of first lines L1 after the step of carrying out first separation.
  • the bars 52 are separated into the plurality of light-emitting elements 51e by applying a load to the bars 52 (i.e., the wafer 50W) along the first direction D1 using a blade.
  • the first and second separation as described above is carried out by cleaving, for example.
  • the first interval P1 is larger than the second interval P2.
  • each of the plurality of light-emitting elements 51e obtained by the method of manufacturing as described above the length along the second direction D2 is longer than the length along the first direction D1.
  • Each of the plurality of light-emitting elements 51e has a long side and a short side. A length of the long side substantially corresponds to the first interval P1. A length of the short side corresponds to the second interval P2.
  • the step of carrying out second separation is performed after carrying out the first separation.
  • a separation along singulation lines that extend along the long sides i.e., the second lines L2 is carried out, and then the separation along the singulation lines that extend along the short sides (i.e., the first lines L1) is carried out.
  • the separation along the second lines L2 can be carried out after the separation along the first lines L1.
  • carrying out the separation along the second lines L2 tends to be difficult after the separation along the first lines L1. That is, it is not easy to carry out the separation along the singulation lines along the long sides of the plurality of light-emitting elements 51e after the separation along the singulation lines along the short sides of the plurality of light-emitting elements 51e.
  • the second separation is carried out after carrying out the first separation. This allows for facilitating separation of the substrate 50 into the plurality of light-emitting elements.
  • unintentional separation occurs along the short sides easily when separation is carried out along the singulation lines that extend along the long sides. That is, unintentional separation occurs more easily in the short sides than in the long sides. According to the present embodiment, unintentional separation in the short sides during separation along the singulation lines that extend along the long sides can be reduced.
  • the first irradiation interval Lp1 that is aligned with the first lines L1 is 2.0 ⁇ m or less, which is small. With such an interval, an unintentional separation along the first lines L1 during the first separation can be reduced.
  • reduction in the first irradiation interval Lp1 allows for increasing the breaking strength along the first lines L1. Accordingly, for example, the separation along the first lines L1 does not occur easily. For example, the occurrence of unintentional separation due to an impact in the first separation can be reduced further.
  • the laser beam 61 is irradiated at the second irradiation interval Lp2 in the irradiation of the laser beam 61 in the second irradiation.
  • the separation along the second lines L2 can be carried out even with a smaller load obtained by the blade or the like. Because the separation along the second lines L2 can be carried out by a smaller load, the load that is applied to the first lines L1 can be also reduced; and the occurrence of the unintentional separation along the first lines L1 can be reduced further.
  • the second irradiation interval Lp2 is in a range of 3.0 ⁇ m to 3.5 ⁇ m. With such a second irradiation interval Lp2, occurrence of the unintentional separation can be reduced stably.
  • unintentional separation occurs during two steps of separation along two directions by, for example, application of an uneven load to the substrate 50. Due to an unintentional separation, defects such as chipping of the substrate occur.
  • a condition of one of the first and second laser irradiation a condition with which a separation is less easily achieved than with a condition of the other of the first and second laser irradiation is employed. With such a condition, an unintentional separation can be reduced.
  • ease of separation along one of the first and second direction may be different from ease of separation along the other of the first and second direction.
  • ease of separation may be different in accordance with the crystal orientation of the substrate 50.
  • the condition of one of the first and second laser irradiation a condition with which a separation is less easily achieved than with a condition of the other of the first and second laser irradiation can be employed.
  • the first irradiation interval Lp1 in the first laser irradiation is set to be smaller than the second irradiation interval Lp2 in the second laser irradiation process.
  • the laser irradiation interval Lp is set appropriately in accordance with the order of the separation (i.e., the cleaving). This allows for reducing an unintentional separation.
  • a method of manufacturing a light-emitting element can be provided in which the productivity can be increased.
  • a sample used in the experiment includes the substrate 50 (the sapphire substrate) and the semiconductor structure 51 in which nitride semiconductors are stacked (referring to FIG. 2 ).
  • a thickness of the sample is approximately 120 ⁇ m.
  • the sample has a planar shape of a rectangle, and a main surface of the sample has one side (i.e., the long side) with a length of 2200 ⁇ m and another side (i.e., the short side) with a length of 2000 ⁇ m.
  • the laser beam 61 is irradiated on the sample along a center line parallel to the long side of the sample.
  • the laser irradiation interval Lp is changed in a range of 1 ⁇ m to 3.5 ⁇ m for each 0.5 ⁇ m.
  • two types of conditions i.e., the case in which the laser beam 61 is irradiated along the m-axis of the sapphire substrate and the case in which the laser beam 61 is irradiated along the a-axis of the sapphire substrate, are employed.
  • the pulse period of the laser beam 61 is constant; and the laser irradiation interval Lp is changed by changing the scan rate of the laser beam 61.
  • the laser beam 61 is emitted from a YAG laser.
  • the wavelength of the laser beam 61 is 1040 nm.
  • the breaking strength was measured for samples in which the laser beam 61 was irradiated at the various laser irradiation intervals Lp.
  • a bending test was conducted for the measurement of the breaking strength. A bending load was applied to the sample at three points, and the load that caused breaking was determined as the breaking strength.
  • FIG. 9 is a graph illustrating the result of the experiment relating to the separation of the light-emitting elements.
  • the horizontal axis of FIG. 9 indicates the laser irradiation interval Lp (in ⁇ m).
  • the vertical axis of FIG. 9 indicates a breaking strength F1 (in newtons (N)).
  • the values of the breaking strength F1 when the laser beam 61 is irradiated along the a-axis direction are indicated by round symbols.
  • the values of the breaking strength F1 when the laser beam 61 is irradiated along the m-axis is indicated by triangular symbols.
  • the average value of the values of the breaking strength F1 when the laser beam 61 is irradiated along the a-axis direction is indicated by square symbols.
  • the breaking strength F1 is increased when the laser irradiation interval Lp is reduced. From the result in FIG. 9 , when the laser irradiation interval Lp is 3 ⁇ m, substantially similar tendencies are observed for the laser irradiation along the m-axis direction and the laser irradiation along the a-axis.
  • the breaking strength F1 started to increase when the laser irradiation interval Lp is 2.5 ⁇ m or less.
  • the breaking strength F1 was greatly increased when the laser irradiation interval Lp is 2.0 ⁇ m or less.
  • the breaking strength F1 was stably reduced when the laser irradiation interval Lp was in a range of 3.0 ⁇ m to 3.5 ⁇ m.
  • the first irradiation interval Lp1 it is preferable for the first irradiation interval Lp1 to be 2.0 ⁇ m or less. It is preferable for the second irradiation interval Lp2 to be 3.0 ⁇ m or more (3.5 ⁇ m or less). With such intervals, there is a large difference between the fracture strength F1 of the first laser irradiation and the fracture strength F1 of the second laser irradiation.
  • the minimum value of the breaking strength F1 when the laser irradiation interval Lp is 1.5 ⁇ m or less is greater than the maximum value when the laser irradiation interval Lp is 3.0 ⁇ m or more.
  • the first irradiation interval Lp1 it is more preferable for the first irradiation interval Lp1 to be 1.5 ⁇ m or less. Thereby, even when variations are taken into consideration, a sufficient difference is obtained for the fracture strength F1.
  • the laser irradiation interval Lp is selected appropriately in accordance with the order of separations (i.e., cleavings). This allows for reducing unintentional separation.
  • the second interval P2 it is preferable for the second interval P2 to be 300 ⁇ m or more.
  • the second interval P2 of less than 300 ⁇ m, an unintentional separation tends to easily occur along the first lines L1 during the first separation.
  • the first irradiation interval Lp1 of a predetermined value the unintentional separation can be reduced even in the case in which the second interval P2 is 300 ⁇ m or less.
  • the first interval P1 it is preferable for the first interval P1 to be 1 mm or more, and more preferably to be in a range of 1 mm to 3 mm.
  • the output of the laser beam 61 in the step of carrying out the first irradiation and the step of carrying out the second irradiation is in a range of 100 mW to 150 mW.
  • the output higher than 150 mW for example, damage may occur in the semiconductor structure 51 (e.g., in the light-emitting elements 51e).
  • the output lower than 100 mW for example, the modified regions 53 are not formed easily, or the crack does not extend easily from the modified regions 53. Therefore, the separation of the substrate 50 may be difficult.
  • the output in a range 100 mW to 150 mW for example, separation can be facilitated while reducing damage of the semiconductor structure 51.
  • the second irradiation it is preferable for the second irradiation to be carried out after the first irradiation.
  • the first interval P1 of the plurality of first lines L1 in the first irradiation is larger than the second interval P2 of the plurality of second lines L2 in the second irradiation.
  • the number of the plurality of first lines L1 per unit surface area is smaller than the number of the plurality of second lines L2 per unit surface area.
  • the plurality of modified regions 53 are formed by the irradiation of the laser beam 61; the crack that occurs from the plurality of modified regions 53 propagates; and the substrate 50 is separated.
  • the number of the modified regions 53 also increased easily, and the stress (e.g., the compressing stress) at the inside of the substrate 50 is increased.
  • the compressive stress at the inside of the substrate 50 is increased, even if the modified regions 53 are formed, the crack that occurs from the modified regions 53 does not extend easily. Therefore, the substrate 50 is not easily separated. Reduction in compressive stress of the interior of the substrate 50 allows for facilitating separation of the substrate 50.
  • the second irradiation can be carried out in a state in which the compressive stress inside the substrate is relatively small.
  • the first irradiation in which the number of scans is smaller
  • the second irradiation in which the number of scans is larger
  • the first irradiation is carried out in a state in which a strong compressing stress acts.
  • the crack does not extend easily; therefore, it is not easy to perform the cleavage of the substrate.
  • difficulty in extension of the crack from the modified regions obtained by the first irradiation and the second irradiation can be reduced. Accordingly, the substrate 50 is separated easily.
  • the wafer 50W in which the semiconductor structure 51 that includes a nitride semiconductor was disposed on a sapphire substrate is provided.
  • a thickness of the sapphire substrate is 120 ⁇ m.
  • the wavelength of the laser beam 61 is approximately 1060 nm.
  • the output of the laser beam 61 is approximately in a range of 100 mW to 150 mW.
  • the first direction D1 is parallel to the a-axis of the sapphire substrate.
  • the second direction D2 is parallel to the m-axis of the sapphire substrate.
  • the first interval P1 is 1100 ⁇ m.
  • the second interval P2 is 200 ⁇ m.
  • the first irradiation interval Lp1 is 1.5 ⁇ m; and the second irradiation interval Lp2 is 3.0 ⁇ m.
  • the first separation was carried out along the second lines L2; subsequently, the second separation process was carried out along the first lines L1.
  • light emitting elements in which chipping or the like occurs due to unintentional breaking was determined to be poor quality.
  • the ratio of light emitting elements of poor quality was 0.5%.
  • the first irradiation interval Lp1 is 3.0 ⁇ m.
  • the other conditions of the reference example are the same as those of the example described above.
  • the ratio of light emitting elements of poor quality was 2.0%. According to the manufacturing method of the example, the ratio of light emitting elements of poor quality can be reduced, and productivity can be increased.
  • a method of manufacturing a light-emitting element can be provided in which the productivity can be increased.
  • perpendicular and parallel refer to not only strictly perpendicular and strictly parallel but also include, for example, a slight deviation from strictly perpendicular and strictly parallel due to manufacturing processes, etc. That is, the terms “perpendicular” and “parallel” encompass substantially perpendicular and substantially parallel configurations, respectively.

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Claims (6)

  1. Verfahren zur Herstellung eines lichtemittierenden Elements (51e), wobei das Verfahren umfasst:
    Bereitstellen eines Wafers (50W), umfassend:
    ein Substrat (50) mit einer ersten Oberfläche (50a) und einer zweiten Oberfläche (50b), und
    eine Halbleiterstruktur (51), die auf der zweiten Oberfläche (50b) des Substrats (50) angeordnet ist;
    Bilden einer Mehrzahl von modifizierten Regionen (53) innerhalb des Substrats (50) des Wafers (50W) durch Bestrahlen des Substrats (50) mit einem Laserstrahl (61); und
    Separieren des Wafers (50W) in eine Mehrzahl von lichtemittierenden Elementen (51e) nach der Bestrahlung des Substrats (50) mit dem Laserstrahl (61);
    wobei das Bilden der Mehrzahl von modifizierten Regionen (53) umfasst:
    Scannen des Laserstrahls (61) entlang einer Mehrzahl von ersten Linien (L1), wobei die Mehrzahl von ersten Linien (L1) sich in einer ersten Richtung (D1) erstrecken und in einer zweiten Richtung (D2) angeordnet sind, wobei die erste Richtung (D1) parallel zu der ersten Oberfläche (50a) ist, wobei die zweite Richtung (D2) die erste Richtung (D1) schneidet und parallel zu der ersten Oberfläche (50a) ist, und
    Scannen des Laserstrahls (61) entlang einer Mehrzahl von zweiten Linien (L2), wobei die Mehrzahl von zweiten Linien (L2) sich in der zweiten Richtung (D2) erstrecken und in der ersten Richtung (D1) angeordnet sind;
    wobei ein erstes Intervall (P1), das ein Intervall ist zwischen der Mehrzahl von ersten Linien (L1) in der zweiten Richtung (D2), größer ist als ein zweites Intervall (P2), das ein Intervall der Mehrzahl von zweiten Linien (L2) in der ersten Richtung (D1) ist;
    wobei während der Einstrahlung des Laserstrahls (61) entlang einer von der Mehrzahl von ersten Linien (L1) beim Scannen des Laserstrahls (61) entlang der Mehrzahl von ersten Linien (L1) der Laserstrahl (61) an einer Mehrzahl von ersten Positionen (61a) eingestrahlt wird, die entlang der ersten Richtung (D1) angeordnet sind, und ein erstes Einstrahlungsintervall (Lp1), das ein Intervall ist zwischen der Mehrzahl von ersten Positionen (61a) entlang der ersten Richtung (D1), 2,0 µm oder weniger ist;
    wobei das Separieren des Wafers (50W) umfasst:
    Separieren des Wafers (50W) in eine Mehrzahl von Stangen (52) entlang der Mehrzahl von zweiten Linien (L2), und
    nach dem Separieren des Wafers (50W) in die Mehrzahl von Stangen (52), Separieren der Stangen (52) in die Mehrzahl von lichtemittierenden Elementen (51e) entlang der Mehrzahl von ersten Linien (L1),
    wobei während des Einstrahlens des Laserstrahls (61) entlang einer von der Mehrzahl von zweiten Linien (L2) beim Scannen des Laserstrahls (61) entlang der Mehrzahl von zweiten Linien (L2) der Laserstrahl (61) an einer Mehrzahl von zweiten Positionen (61b) entlang der zweiten Richtung (D2) eingestrahlt wird, und ein zweites Einstrahlungsintervall (Lp2), das ein Intervall ist zwischen der Mehrzahl von zweiten Positionen (61b) entlang der zweiten Richtung (D2), in einem Bereich von 3,0 µm bis 3,5 µm ist,
    wobei das Substrat aus Saphir hergestellt ist,
    wobei die erste Richtung (D1) mit einer a-Achse des Substrats (50) ausgerichtet ist, und
    wobei die zweite Richtung (D2) mit einer m-Achse des Substrats (50) ausgerichtet ist.
  2. Verfahren zu Herstellung des lichtemittierenden Elements nach Anspruch 1, wobei das zweite Intervall 300 µm oder weniger ist.
  3. Verfahren zu Herstellung des lichtemittierenden Elements nach Anspruch 1 oder 2, wobei eine Ausgabe des Laserstrahls beim Scannen des Laserstrahls entlang der Mehrzahl von ersten Linien und beim Scannen des Laserstrahls entlang der Mehrzahl von zweiten Linien in einem Bereich von 100 mW bis 150 mW ist.
  4. Verfahren zu Herstellung des lichtemittierenden Elements nach einem der Ansprüche 1 bis 3, wobei das Scannen des Laserstrahls entlang der Mehrzahl von zweiten Linien nach dem Scannen des Laserstrahls entlang einer Mehrzahl von ersten Linien durchgeführt wird.
  5. Verfahren zu Herstellung des lichtemittierenden Elements nach einem der Ansprüche 1 bis 4, wobei das erste Intervall 1 mm oder mehr ist.
  6. Verfahren zu Herstellung des lichtemittierenden Elements nach einem der Ansprüche 1 bis 5, wobei die Mehrzahl von modifizierten Regionen (53), die beim Scannen des Laserstrahls (61) entlang einer Mehrzahl von ersten Linien (L1) gebildet werden, einander überlappen.
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