EP3406112A1 - Procédés de traitement d'un substrat - Google Patents

Procédés de traitement d'un substrat

Info

Publication number
EP3406112A1
EP3406112A1 EP17703280.2A EP17703280A EP3406112A1 EP 3406112 A1 EP3406112 A1 EP 3406112A1 EP 17703280 A EP17703280 A EP 17703280A EP 3406112 A1 EP3406112 A1 EP 3406112A1
Authority
EP
European Patent Office
Prior art keywords
carrier
substrate
insertion tool
wedge
major surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17703280.2A
Other languages
German (de)
English (en)
Inventor
Timothy Michael Miller
Joseph William SOPER
Ross Johnson STEWART
Gary Carl WEBER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of EP3406112A1 publication Critical patent/EP3406112A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0264—Peeling insulating layer, e.g. foil, or separating mask
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/085—Using vacuum or low pressure

Definitions

  • the present disclosure relates generally to methods for processing a substrate and, more particularly, to methods of processing a substrate by initiating debonding at a location of an outer peripheral bonded interface between the substrate and a carrier.
  • Flexible glass can have several beneficial properties related to either the fabrication or performance of electronic devices, for example, liquid crystal displays (LCDs), electrophoretic displays (EPD), organic light emitting diode displays (OLEDs), plasma display panels (PDPs), touch sensors, photovoltaics, etc.
  • LCDs liquid crystal displays
  • EPD electrophoretic displays
  • OLEDs organic light emitting diode displays
  • PDPs plasma display panels
  • touch sensors photovoltaics, etc.
  • One component in the use of flexible glass is the ability to handle the glass in a sheet format.
  • the flexible glass is bonded to a relatively rigid carrier using a binding agent.
  • the relatively rigid characteristics and size of the carrier allow the bonded structure to be handled in production without undesired bending or damage to the flexible glass.
  • a flexible glass sheet may be bonded to a carrier, and then functional components (e.g., a color filter, touch sensor, or thin-film transistor (TFT) components) may be attached to the flexible glass sheet to produce a glass substrate that may be used in the production of liquid crystal displays (LCDs).
  • functional components e.g., a color filter, touch sensor, or thin-film transistor (TFT) components
  • Embodiments of the disclosure provide methods of processing a substrate (e.g., one or more single substrates or a stack of two or more single substrates).
  • Single substrates throughout the disclosure can comprise a wide range of substrates including a single glass substrate (e.g., a single flexible glass substrate, or single rigid glass substrate), a single glass-ceramic substrate, a single ceramic substrate, or a single silicon substrate.
  • the single substrate may comprise a single blank substrate of material, such as a single blank glass substrate (e.g., a glass sheet including pristine surfaces that may, for example, have been separated from a glass ribbon produced by a down-draw fusion process or other technique), a single blank glass-ceramic substrate or a single blank silicon substrate (e.g., a single blank silicon wafer).
  • the single blank glass substrate may be transparent, translucent or opaque and may optionally include the same glass composition throughout the entire thickness of the single blank glass substrate from a first major surface to a second major surface of the single blank glass substrate.
  • the single blank glass substrate may comprise a single blank glass substrate that has been chemically strengthened.
  • any of the single substrates of the disclosure may optionally include a wide range of functionality.
  • single glass substrates may include features that allow the single substrate to modify light or be incorporated into a display device, touch sensor component, or other device.
  • the single glass substrate may include color filters, polarizers, thin-film transistors (TFT) or other components.
  • TFT thin-film transistors
  • the single substrate may comprise features that allow it to be incorporated into an integrated circuit, a photovoltaic device or other electrical component.
  • the substrate may comprise a stack of single substrates, for example, any one or combination of the single substrates discussed above.
  • the stack of single substrates may be built by two or more single substrates stacked relative to one another with facing major surfaces of adjacent single substrates being bonded to one another.
  • the stack of single substrates may comprise a stack of single glass substrates.
  • a first single glass substrate may include a color filter and a second single glass substrate may include thin-film transistors.
  • the first and second single glass substrates may be bonded together, for example with an edge bond, as a stack of single substrates that may be formed as a display panel for display applications.
  • substrates of the present disclosure can include any one or more single substrates or stack of single substrates disclosed above.
  • a substrate e.g., one or more single substrates, stack of single substrates
  • a first major surface of the substrate is bonded to a single carrier.
  • both major surfaces of a substrate may be bonded to respective carriers wherein the substrate is positioned between the two carriers.
  • the present disclosure provides embodiments that allow separation of the carrier(s) without contacting the substrate bonded to the carrier(s). Consequently, damage resulting from conventional techniques that contact the substrate can be avoided. Furthermore, the present disclosure provides techniques that can initiate debonding between a carrier and a substrate bonded to the carrier prior to fully removing (e.g., by peeling) the carrier from the substrate bonded to the carrier. The initial location of the bonded interface where debonding is initiated provides a desired point of weakness in the bonded interface. As such, subsequent peeling techniques can involve significantly less force since debonding has already been initiated. As the maximum applied force to fully remove the carrier (e.g., by way of peeling) is reduced, the associated stress applied to the substrate can likewise be reduced, thereby further reducing possible damage to the substrate.
  • a method for processing a substrate with a first major surface of the substrate removably bonded to a first major surface of a first carrier and a second major surface of the substrate removably bonded to a first major surface of a second carrier.
  • An outer edge portion of the substrate is disposed between an outer portion of the first carrier and an outer portion of the second carrier.
  • the method may include the step (I) of pressing a wedge against the outer portions of the first and second carriers.
  • the method may further include the step (II) of initiating debonding at a location of an outer peripheral bonded interface between the substrate and the first carrier.
  • the step of initiating debonding can be achieved by providing relative movement between the wedge and the outer edge portion of the substrate to pry apart the outer portions of the first and second carriers.
  • steps (I) and (II) may be performed without contacting any part of the substrate with the wedge.
  • a first portion of an insertion tool may include a tapered thickness defining the wedge.
  • the method may further include the step of increasing a distance between a debonded portion of the first carrier and the second carrier with the insertion tool to debond further portions of the first carrier from the substrate.
  • the insertion tool may further include a second portion having a constant thickness.
  • the method may still further include reducing a distance between the wedge and the outer edge portion of the substrate at least until facing inner surfaces of the pried apart outer portions of the first and second carriers are spaced apart by a distance equal to the constant thickness of the second portion of the insertion tool.
  • the constant distance of the second portion of the insertion tool can be from about 20 microns to about 40 microns greater than a distance between the facing inner surfaces of the outer portions of the first and second carriers at the beginning of step (I).
  • the second portion of the insertion tool can include opposed outer parallel surfaces defining the constant thickness.
  • the method may further include the step of increasing a distance between a debonded portion of the first carrier and the second carrier with a surface of the second portion of the insertion tool engaging the inner surface of the outer portion of the first carrier to debond further portions of the first carrier from the substrate.
  • the method may further include a step of inhibiting bending of the second carrier during step (II).
  • the method may further include removably attaching a second major surface of the second carrier to a plate to inhibit bending of the second carrier during step (II).
  • the plate can include a vacuum plate, and the method may further include vacuum attaching the second major surface of the second carrier to the vacuum plate to inhibit bending of the second carrier during step (II).
  • the substrate can include at least one of a glass substrate and a silicon substrate.
  • the substrate may include a single glass substrate with a thickness of from about 50 microns to about 300 microns.
  • At least one of the first carrier and the second carrier may include a thickness of from about 200 microns to about 700 microns.
  • a setback lateral distance between the substrate and at least one of the first carrier and the second carrier can be from about 2 mm to about 10 mm.
  • the method may further include a step (III) of initiating debonding at a location of an outer peripheral bonded interface between the substrate and the second carrier by providing relative movement between the wedge and the outer edge portion of the substrate to pry apart the outer portions of the first and second carriers.
  • the method may include a step of inhibiting bending of the first carrier during step (III).
  • the method may further include vacuum attaching a second major surface of the first carrier to a vacuum plate to inhibit bending of the first carrier during step (III).
  • the method may further include a step
  • step (IV) the method may further include a step
  • a method for processing a glass substrate with a first major surface of the glass substrate removably bonded to a first major surface of a first carrier and a second major surface of the glass substrate removably bonded to a first major surface of a second carrier.
  • An outer edge portion of the glass substrate is disposed between an outer portion of the first carrier and an outer portion of the second carrier.
  • the method includes a step (I) of removably attaching a second major surface of the second carrier to a plate to inhibit bending of the second carrier.
  • the method further includes a step (II) of pressing a wedge of an insertion tool against the outer portions of the first and second carriers while the second major surface of the second carrier is attached to the plate.
  • the method further includes a step (III) of initiating debonding at a location of an outer peripheral bonded interface between the glass substrate and the first carrier while the second major surface of the second carrier is attached to the plate.
  • Initiating debonding can be achieved by providing relative movement between the wedge and the outer edge of the glass substrate to pry apart the outer portions of the first and second carriers. Steps (II) and (III) may be performed without contacting any part of the glass substrate with the wedge.
  • the insertion tool may include a first portion including the wedge and a second portion having a constant thickness.
  • the method may further include reducing a distance between the wedge and the outer edge portion of the glass substrate at least until facing inner surfaces of the pried apart outer portions of the first and second carriers are spaced apart by a distance equal to the constant thickness of the second portion of the insertion tool.
  • step (III) further including the step of increasing a distance between a debonded portion of the first carrier and the second carrier. Increasing the distance can be achieved with a surface of the second portion of the insertion tool engaging the inner surface of the outer portion of the first carrier to debond further portions of the first carrier from the glass substrate.
  • a method for processing a substrate with a first major surface of the substrate removably bonded to a first major surface of a carrier.
  • the method includes a step of (I) removably attaching a second maj or surface of the substrate relative to a plate to inhibit bending of the substrate. Once removably attached, an outer edge portion of the substrate is disposed between an outer portion of the carrier and a surface of the plate.
  • the method may further include a step (II) of pressing a wedge against the outer portion of the carrier and the surface of the plate.
  • the method may still further include a step (III) of initiating debonding at a location of an outer peripheral bonded interface between the substrate and the carrier by providing relative movement between the wedge and the outer edge portion of the substrate to pry apart the outer portion of the carrier and the surface of the plate while the second major surface of the substrate remains removably attached relative to the surface of the plate.
  • steps (II) and (III) can be performed without contacting any part of the substrate with the wedge.
  • a first portion of an insertion tool may include a tapered thickness defining the wedge.
  • the method may further include the step of increasing a distance between a debonded portion of the carrier and the surface of the plate with the insertion tool to debond further portions of the carrier from the substrate.
  • the insertion tool may further include a second portion having a constant thickness.
  • the method may still further include reducing a distance between the wedge and the outer edge portion of the substrate at least until an inner surface of the carrier and the surface of the plate are spaced apart by a distance equal to the constant thickness of the second portion of the insertion tool.
  • the constant distance of the second portion of the insertion tool can be from about 20 microns to about 40 microns greater than a distance between the inner surface of the carrier and the surface of the plate at the beginning of step (II).
  • the second portion of the insertion tool can include opposed outer parallel surfaces defining the constant thickness.
  • the method may further include the step of increasing a distance between a debonded portion of the carrier and the surface of the plate with the insertion tool engaging the inner surface of the outer portion of the carrier to debond further portions of the carrier from the substrate.
  • the plate may include a vacuum plate, and step (I) includes vacuum attaching the second major surface of the substrate to the vacuum plate.
  • the substrate may include at least one of a glass substrate and a silicon substrate.
  • the substrate may include a single substrate.
  • the substrate may include a glass substrate.
  • the substrate can include a single substrate with a thickness of from about 50 microns to about 300 microns.
  • the carrier can include a thickness of from about 200 microns to about 700 microns.
  • a setback lateral distance between the substrate and the carrier can be from about 2 mm to about 10 mm.
  • the method may further include a step (IV) of completely removing the carrier from the substrate.
  • FIG. 1 is a schematic plan view of a second carrier being vacuum attached to a vacuum plate with a portion of a substrate, a first carrier and the second carrier being broken away to illustrate vacuum ports of the vacuum plate;
  • FIG. 2 is a schematic cross-sectional view along line 2-2 of FIG. 1;
  • FIG. 3 is an enlarged schematic view along view 3 of FIG. 2 illustrating a wedge positioned at a location prior to pressing the wedge against the outer portions of the first and second carriers;
  • FIG. 4 illustrates an embodiment of an alternative cross sectional profile of a wedge and/or the outer portions of the first and second carriers of any of the embodiments of the disclosure;
  • FIG. 5 illustrates another embodiment of an alternative cross sectional profile of a wedge and/or the outer portions of the first and second carriers of any of the embodiments of the disclosure
  • FIG. 6 is an enlarged schematic view similar to FIG. 3 but illustrating a step of pressing a wedge against the outer portions of the first and second carriers;
  • FIG. 7 is an enlarged schematic view similar to FIG. 6 but illustrating a step of initiating debonding between the first carrier and the substrate;
  • FIG. 8 is an enlarged schematic view similar to FIG. 7 but illustrating a step of further inserting an insertion tool such that pried apart outer portions of the first and second carriers are spaced apart by a distance equal to a constant thickness of a second portion of the insertion tool;
  • FIG. 9 is an enlarged schematic view similar to FIG. 8 but illustrating a step of increasing a distance between a debonded portion of the first carrier and the second carrier with the insertion tool;
  • FIG. 10 is an enlarged schematic view similar to FIG. 9 but illustrating a step of completely removing the first carrier from the substrate;
  • FIG. 11 illustrates the substrate being vacuum attached relative to a vacuum plate with a wedge pressed against an outer portion of the second carrier and a surface of the vacuum plate;
  • FIG. 12 illustrates an embodiment of an alternative cross sectional profile of the wedge and/or the outer portion of the carrier of FIG. 11;
  • FIG. 13 illustrates another embodiment of an alternative cross sectional profile of the wedge and/or the outer portion of the carrier of FIG. 11;
  • FIG. 14 is an enlarged schematic view similar to FIG. 11 but illustrating a step of initiating debonding between the second carrier and the substrate;
  • FIG. 15 is an enlarged schematic view similar to FIG. 11 but illustrating a step of further inserting an insertion tool
  • FIG. 16 is an enlarged schematic view similar to FIG. 11 but illustrating a step of increasing a distance between a debonded portion of the second carrier and the surface of the plate;
  • FIG. 17 is an enlarged schematic view illustrating a step of completely removing the second carrier from the substrate of FIG. 16;
  • FIG. 18 is a block diagram illustrating steps of alternative embodiments of the disclosure.
  • FIG. 19 is a plot demonstrating percent initiation of a debond with respect to a setback lateral distance.
  • the substrate may be bonded to one or more carriers.
  • the relatively rigid characteristics and size of the carrier allow the bonded substrate to be handled in production without significant bending that may otherwise cause damage to the substrate and/or components mounted to the substrate.
  • the substrate of any of the embodiments of the disclosure may comprise the one or more single substrates or stack of two or more single substrates as discussed above.
  • the single substrates may have a thickness of from about 50 micrometers to about 300 micrometers although other thicknesses may be provided in further embodiments.
  • a single flexible glass substrate or a stack of single flexible glass substrates with each single flexible glass substrate having a thickness of from about 50 micrometers to about 300 micrometers may be removably bonded to a rigid carrier using a binding agent, for example a polymer binding agent, or the binding agents disclosed in U.S. Patent Application Publication Nos. US2014/0170378, US2015/0329415, or the binding agents disclosed in International patent application publication Nos. WO2015/113020, WO2015/113023, WO2015/112958, WO2015/157202, or the binding agents disclosed in US Provisional Patent Applications US62/185095 filed on June 26, 2015, US62/163821 filed on May 19, 2015, US62/201245 filed on August 5, 2015.
  • the binding agent can include a silicone material as detailed in EP2025650 or a surface roughness mechanism as detailed in KR2013044774.
  • the carrier may be fabricated from glass, resin or other materials capable of withstanding conditions during processing of the substrate removably bonded to the carrier.
  • the carriers throughout the disclosure can optionally introduce a desired level of rigidity by providing the carrier with a thickness that is greater than the thickness of the substrate removably bonded to the carrier.
  • the carriers may comprise a plate (e.g. , rigid plate) with a thickness between a first major surface and a second major surface of the carrier.
  • the carriers throughout the disclosure can include a thickness of from about 200 micrometers to about 700 micrometers.
  • the carrier may include a thickness that is greater than the thickness of the single substrate bonded to the carrier.
  • the carrier can be selected with a thickness wherein the overall thickness of the carrier and the substrate bonded to the carrier is within a range that can be used with existing processing machinery already configured to process relatively thick glass substrates having a thickness within the range of the overall thickness of the carrier and the substrate bonded to the carrier.
  • a substrate 301 may optionally comprise a single substrate or a stack of single substrates.
  • FIG. 3 illustrates the substrate 301 in the optional form of a stack of two single substrates including a first single glass substrate 315a bonded to a second single glass substrate 315b.
  • the substrate of FIG. 3 can be formed in a wide variety of ways. For instance, a first single flexible glass sheet may be bonded to a first carrier 307 to create a first bonded structure 323a. Likewise, a second flexible glass sheet may be bonded to a second carrier 313 to create a second bonded structure 323b.
  • the first bonded structure 323a may be processed with existing machinery designed to handle the first bonded structure to add one or more functional components, for example a color filter 317, to the first flexible glass sheet to create the first single glass substrate 315a.
  • the first single glass substrate 315a may be inflexible due to bonding with the rigid first carrier 307 but would be a single flexible glass substrate if fully debonded from the first carrier 307.
  • the second bonded structure 323b may be processed with existing machinery designed to handle the second bonded structure and add one or more functional components, for example thin-film transistor (TFT) components 319, to the second flexible glass sheet to create the second single glass substrate 315b.
  • TFT thin-film transistor
  • the second single glass substrate 315b may be inflexible due to bonding with the rigid second carrier 313 but would be a single flexible glass substrate if fully debonded from the second carrier 313.
  • the outer face of the first single glass substrate 315a of the first bonded structure 323a may be bonded to the outer face of the second single glass substrate 315b of the second bonded structure 323b to form the substrate 301 (e.g., the illustrated stack of single substrates) comprising the first single substrate 315a bonded to the second single substrate 315b.
  • the substrate 301 in the form of the stack of single glass substrates may form a glass panel for display applications although other structures may be formed in further embodiments.
  • the substrate 301 in the form of the stack of single substrates may be inflexible due to bonding with the rigid first carrier 307 and the rigid second carrier 313 but would be a flexible stack of single substrates if fully debonded from the first and second carriers 307, 313.
  • the substrate 301 includes a first major surface 303 removably bonded to a first major surface 305 of the first carrier 307 and a second major surface 309 of the substrate 301 removably bonded to a first major surface 311 of the second carrier 313.
  • the carrier without damaging the substrate. Indeed, prior to processing the single substrate (e.g., by adding one or more functional components), there may be a desire to remove the single substrate from the carrier. In another embodiment, there may be a desire to remove the single substrate from the carrier after the substrate is processed into a single substrate with functional components and prior to creating the substrate as a stack of single substrates. In still further embodiments, there may be a desire to remove one or more carriers from the substrate including the stack of single substrates, for example the substrate 301 discussed above.
  • Such debonding initiation can reduce stress, and possible resulting damage to the substrate and/or the carrier, that may otherwise occur without a debonding initiation step.
  • providing a debonding initiation step can target a relatively small location of the outer peripheral bonded interface to allow initial debonding over a small area with a first force, thereby providing a point of weakness in the bond that can allow easier complete removal (e.g., by peeling) of the carrier from the substrate with a second force that is reduced compared to the first force.
  • the method can start at 1801 by optionally including step 1803 of inhibiting bending of the second carrier 313.
  • the second carrier 313 can be substantially fixed to resist bending under a bending moment. In such a manner, the method allows one to reasonably predict which carrier will release first. Indeed, by inhibiting bending of the second carrier 313 bending of the carriers is primarily limited to the first carrier 307. As such, inhibiting bending of the second carrier 313 can encourage debonding to initiate at a location of an outer peripheral bonded interface between the substrate 301 and the first carrier 307.
  • the step 1803 of inhibiting bending of the second carrier 313 can be achieved in a wide variety of ways.
  • the method step 1803 can include removably attaching a second major surface 325 of the second carrier 313 to a plate to inhibit bending of the second carrier 313.
  • the plate can comprise a rigid plate made out of metal (e.g., stainless steel, aluminum, etc.), plastic, resin or other material.
  • the plate can comprise a vacuum plate 327.
  • the vacuum plate 327 can be vacuum attached to the second major surface 325 of the second carrier 313 to releasably secure the second carrier 313 in place relative to the vacuum plate 327.
  • the vacuum plate 327 can include one or more vacuum ports, for example the illustrated plurality of vacuum ports 101 open at a surface 103 (e.g., a substantially planar surface) of the vacuum plate 327.
  • the plurality of vacuum ports 101 may be placed in selective fluid communication with a vacuum source 201 (see FIG. 2) for example a vacuum tank or a vacuum pump.
  • a vacuum conduit 203 for example a flexible hose, may provide fluid communication between the plurality of vacuum ports 101 and the vacuum source 201.
  • a the vacuum plate may comprise a vacuum chamber 205 that may be placed in fluid communication with the plurality of vacuum ports 101 such that the plurality of vacuum ports 101 are in fluid communication with the vacuum conduit 203.
  • one or more standoffs may be provided to prevent actual engagement between the second major surface 325 of the second carrier 313 and the surface 103 of the vacuum plate 327.
  • Such standoffs may comprise a peripheral standoff, for example a ring circumscribing the plurality of vacuum ports 101.
  • the standoffs can comprise pillars distributed between vacuum ports throughout the pattern of vacuum ports 101.
  • the pillars can comprise various materials, for example a polymeric material.
  • the standoffs can extend a distance of about 1.6 millimeters (mm) (e.g., 1/16 of an inch) although other distances may be used in further embodiments.
  • the method may optionally proceed from the step 1803 of inhibiting bending of the second carrier 313 to a step 1807 of pressing a wedge 601 (see FIG. 6), for example the wedge of an insertion tool 329, against an outer portion 603a of the first carrier 307 and an outer portion 603b of the second carrier 313.
  • the method can begin with the step 1807 of pressing the wedge 601 against the outer portions 603a, 603b of the first and second carriers 307, 313. This may be desirable to reduce processing time and if there is no preference on which carrier releases first.
  • the second carrier 313 may be inhibited from bending, for example with the vacuum plate 327 discussed above.
  • the wedge 601 may be inserted in direction 105 toward a chamfered corner 107 including the outer portions 603a, 603b of the first carrier 307 and second carrier 313, respectively.
  • This angle of approach can reduce stress concentrations at the point of engagement with the carriers while maximizing stress concentration at the corner of the substrate 301 to facilitate initiation of debonding of the carrier from the substrate.
  • any or all of the corners of the carriers may include a rounded corner 109 or other comer shape.
  • any or all of the corners of the carrier may comprise a chamfer such as the chamfered comers 107, 110a, 110b.
  • the comers of the substrate 301 may optionally include a rounded comer 113, a chamfered comer 115 or other comer shape.
  • the substrate may include a mix of rounded comers or chamfered comers or other comer shapes. Still further all of the comers may comprise rounded comers, chamfered comers or other comer shapes.
  • the method may proceed to a step 1811 of initiating debonding at a location 701 (see FIG. 7) of an outer peripheral bonded interface 605 (see FIG. 6) between the substrate 301 and the first carrier 307 by providing relative movement between the wedge 601 and the outer edge portion 321 of the substrate 301 to pry apart the outer portions 603a, 603b of at least one of the first and second carriers 307, 313.
  • the second carrier may be inhibited from bending as described with respect to step 1803 above.
  • the method may include vacuum attaching the second major surface 325 of the second carrier 313 to the vacuum plate 327 to inhibit bending of the second carrier 313 during step 1803.
  • the act of prying apart at leat one of the outer portions 603a, 603b of the first and second carriers 307, 313 can be achieved by linearly pressing the wedge 601 against the outer portions 603a, 603b, for example, in direction 105 shown in FIGS. 1, 6 and 7.
  • the prying action provided by the wedge 601 is achieved by the relative profile shapes of the outer portions 603a, 603b and wedge 601.
  • a tapered thickness of an insertion tool defines the wedge 601.
  • the insertion tool 329 may include an outer end provided with the wedge 601 that tapers from a larger thickness Tl to a smaller thickness T2 in an outward direction 331.
  • FIG. 4 illustrates another embodiment of an insertion tool 401 with a chamfered wedge 403 including angled sides 405 that may terminate at a blunt end 407.
  • FIG. 5 illustrates yet another embodiment of an insertion tool 501 with a rounded wedge 503 including rounded comers 505 that may terminate at a blunt end 507.
  • Providing the insertion tool with a tapered wedge can reduce sharp comers that may provide stress points that can cause damage to the insertion tool and/or the outer portions 603a, 603b.
  • the tapered wedge allows the outer portions 603a, 603b to be pried apart since the maximum thickness 607 (see FIG. 6) of the insertion tool 329 is greater than a distance "Dl" (see FIG. 6) between facing inner surfaces of the outer portions 603a, 603b of the first and second carriers 307, 313 at the beginning of step 1807.
  • the outer portions 603a, 603b may have a similar rounded profile as the wedge discussed in any of the embodiments discussed above. That is, the outer portions 603a, 603b may have a profile as shown in any one of FIGS. 4, 5, 12, or 13. Furthermore, it is also contemplated that the outer portions 603a, 603b may have a flat edge with 90 degree comers in embodiments where the wedge of the insertion tool includes a wedge defined by a tapered thickness of the end of the insertion tool. Alternatively, the wedge of the insertion tool may comprise an end with a flat edge with 90 degree comers in embodiments where the outer portions 603a, 603b include tapered ends.
  • providing both the outer portions 603a, 603b and the wedge 601 of the insertion tool with tapered profiles can reduce stress points, thereby reducing wear and damage to the insertion tool and/or the carrier while also providing the desired prying action.
  • the method steps 1807 and 1811 may be carried out without contacting any part of the substrate 301 with the wedge 601. Indeed, for example, as shown in FIG. 8, at the fully inserted position, an apex 601a of the wedge 601 is spaced apart from the outer edge portion 321 of the substrate 301. Preventing contact between substrate 301 and wedge 601 can avoid application of pressure to the substrate 301, thereby reducing a probability of damaging the substrate 301 that might otherwise occur with other techniques that engage the substrate and/or the carrier with a blade in an attempt to break through the outer peripheral bonded interface 605. Furthermore, reducing sharp points on the wedge of the insertion tool can further reduce or prevent damage to the substrate 301 if contact nevertheless somehow occurs.
  • providing the wedge of the insertion tool with the blunted ends 407, 507 or with the rounded apex 601a can reduce or eliminate sharp edges, points, or corners and thereby avoid damage to the outer edge portion 321 of the substrate 301 if inadvertent contact occurs.
  • the method may optionally proceed to the step 1813 of increasing a distance between a debonded portion of the first carrier 307 and the second carrier 313 with the insertion tool 329 to debond further portions of the first carrier 307 from the substrate 301.
  • the insertion tool may optionally be further inserted in the insertion direction 105 until the maximum thickness of the insertion tool 329 is positioned underneath the first major surface 305 of the first carrier 307.
  • the insertion tool includes a second portion 801 that includes a constant thickness 609 over a length of the second portion 801 of insertion tool 329.
  • constant thickness 609 over the length of the second portion 801 may comprise the maximum thickness of the insertion tool.
  • the constant thickness 609 may be provided by two opposed outer parallel surfaces 803a, 803b. Parallel surfaces can provide the constant thickness 609 that may provide a desired spacing between the outer portions 603a, 603b of the first and second carriers 307, 313.
  • the constant thickness 609 can be from about 20 micrometers to about 40 micrometers greater than the distance "Dl" between facing inner surfaces of the outer portions 603a, 603b at the beginning of step 1807. While a wide range of thickness differentials may be employed, providing a thickness differential of less than 20 micrometers may not successfully initiate the debonding in some applications while providing a thickness differential of greater than 40 micrometers my render the insertion tool too difficult to insert in some applications.
  • the method may further include reducing a distance between the wedge 601 and the outer edge portion 321 of the substrate 301 at least until facing inner surfaces of the pried apart outer portions 603a, 603b of the first and second carriers 307, 313 are spaced apart by a distance "D2" equal to the constant thickness 609 of the second portion 801 of the insertion tool 329. Reducing the distance can provide an overlapped planar interface 805 that can reduce stress as well as reduce the probability of the insertion tool being inadvertently disengaged from the first carrier 307 during the lifting operation described below. Reducing the distance can be achieved, for example, by further inserting the insertion tool in direction 105.
  • the setback lateral distance "LI" is considered the lateral distance between the outermost point of the carrier to be lifted (e.g., first carrier 307) and the outermost point of the outer edge portion 321 of the substrate 301 at the location where the insertion tool is inserted to initiate debonding.
  • a wide range of setback lateral distances may be used in accordance with the disclosure. For instance, in some embodiments, the setback lateral distance can be from about 2 mm to about 10 mm.
  • FIG. 19 illustrates a plot of percent successful debond initiation on the vertical axis vs.
  • setback distance in millimeters on the horizontal axis.
  • the squares represent actual data while the curved line illustrates a function fit to the actual data.
  • the higher the setback distance the greater the percent of the substrates achieved successful debonding initiation.
  • impressive results of from greater than 70 percent to about 100 percent can be achieved in some embodiments with a setback lateral distance from about 2 mm to about 10 mm. Even greater results can be achieved with a setback lateral distance from about 6 mm to about 10 mm.
  • the step 1813 of increasing the distance between a debonded portion of the first carrier 307 and the second carrier 313 can include lifting the insertion tool 329 in a direction 901 away from the first major surface 311 of the second carrier 313.
  • the direction 901 may be perpendicular to the first major surface 311 to reduce, such as prevent, lateral slipping of the first carrier relative to the insertion tool 329.
  • the distance can be increased until facing inner surfaces of the pried apart outer portions 603a, 603b of the first and second carriers 307, 313 are spaced apart by a distance "D3" with a surface of the second portion 801 of the insertion tool 329 (e.g., a portion of the illustrated parallel surface 803a) engaging the inner surface of the outer portion 603a of the first carrier 307 to debond further portions of the first carrier 307 from the substrate 301.
  • a distance "D3" with a surface of the second portion 801 of the insertion tool 329 (e.g., a portion of the illustrated parallel surface 803a) engaging the inner surface of the outer portion 603a of the first carrier 307 to debond further portions of the first carrier 307 from the substrate 301.
  • the method may optionally proceed to step 1819 of flipping the substrate over to conduct similar procedures on the opposite side to initiate debonding of the second carrier 313 from the substrate 301.
  • the procedure shown in FIGS. 6-9 may be conducted again, as described above, but with the first carrier 307 mounted to the vacuum plate 327 in the figures.
  • the method can proceed to initiating debonding at a location of an outer peripheral bonded interface between the substrate 301 and the second carrier 313 by providing relative movement between the wedge 601 and the outer edge portion 321 of the substrate 301 to pry apart the outer portions 603a, 603b of the first and second carriers 307, 313.
  • the method can include the step of inhibiting bending of the first carrier, for example with a plate, while initiating debonding.
  • initiating debonding between each of the carriers 307, 313 and the substrate 301 may be conducted prior to completely removing one or both of the carriers 307, 313 during step 1821. Indeed, in some embodiments, the procedure is ended at 1830 without removing the carriers as indicated by arrows 1823 and 1825. This may occur if complete removal is to be carried out at a different time or location. For instance, initiating the debonding but not completely debonding the carriers from the substrate may allow the carriers to protect the substrate during shipping. At the same time, removing the carriers at the destination location is simplified thanks to the process of initiating debonding without complete debonding of the carriers. Furthermore, referring to FIG. 1, initiating debonding may take place on opposite corners of the carriers. For instance, initiating debonding of the first carrier may occur at chamfered corner 107 while debonding initiation of the second carrier may similarly be conducted at one of the opposite comers 110a, 110b.
  • debonding initiation at one of the opposite corners 110a, 110b can help maintain rigidity of the substrate or carrier being vacuum sealed against the vacuum plate during the second debonding initiation procedure of the second carrier.
  • debonding initiation of any one carrier (for example, the first carrier or the second carrier) from the substrate may occur at more than one location, and such may be done before flipping the stack over to initiate debonding of any other carrier from the substrate at one or more locations around the periphery of the stack.
  • FIG. 10 illustrates the step 1821 of completely removing the first carrier 307 from the substrate 301.
  • a vacuum bar 1001 may be used to grip the portion of the carrier where debonding has been initiated and continue lifting that portion upward in direction 1003 to completely remove (e.g., by peeling) the first carrier 307 from the substrate 301.
  • a similar procedure may be carried out to remove second carrier 313 from the substrate 301.
  • one embodiment of the disclosure can include a method of processing a glass substrate, for example the glass substrate 301 and including the stack of single glass substrates described above.
  • the first major surface 303 of the glass substrate 301 is removably bonded to the first major surface 305 of the first carrier 307 and the second major surface 309 of the glass substrate 301 is removably bonded to the first major surface 311 of the second carrier 313.
  • the outer edge portion 321 of the glass substrate 301 is disposed between the outer portion 603a of the first carrier 307 and the outer portion 603b of the second carrier 313.
  • the method can include the step 1803 of removably attaching the second major surface 325 of the second carrier 313 to the plate (e.g., vacuum plate) to inhibit bending of the second carrier 313.
  • the method can further include the step 1807 of pressing the wedge 601 of the insertion tool 329 against and between the outer portions 603a, 603b of the first and second carriers 307, 313 while the second major surface 325 of the second carrier 313 is attached to the plate (e.g., vacuum plate).
  • the method can further include the step 1811 of initiating debonding at a location 701 (see FIG. 7) of the outer peripheral bonded interface 605 (see FIG.
  • the step of initiating debonding can be achieved by providing relative movement between the wedge 601 and the outer edge portion 321 of the substrate 301 to pry apart the outer portions of the first and second carriers 307, 313, wherein steps 1807 and 1811 may be performed without contacting any part of the glass substrate 301 with the wedge 601.
  • the step of lifting 1813 is optional.
  • the method may proceed directly from step 1811 to the step 1821 of completely removing the carrier from the substrate.
  • the first carrier 307 may be completely removed as indicated in FIG. 10.
  • the method may optionally proceed to step 1819 of flipping.
  • the process of removing the second carrier 313 is shown in FIGS. 11-17. Unless otherwise indicated, the process associated with
  • FIGS. 11-17 may be similar or identical to the process indicated in FIGS. 1-10. Moreover, while the process illustrated in FIGS. 11-17 shows removal of a carrier from a glass substrate 301, a similar procedure may be employed for any of the other substrates.
  • the method can include processing a substrate, for example the illustrated substrate 301 with the second major surface 309 of the substrate 301 removably bonded to the first major surface 311 of the second carrier 313.
  • the method can include the step of removably attaching the first major surface 303 of the substrate 301 relative to the plate 327 (e.g., vacuum plate) to inhibit bending of the substrate 301.
  • the first major surface 303 of the substrate 301 or at least a portion of the first major surface 303 of the substrate 301 may not contact the plate 327 while the first major surface 303 of the substrate is still removably attached relative to the plate 327.
  • Such embodiments may be particularly useful in applications where contact with features (e.g., components) on the first major surface 303 may be damaged by contacting the plate 327 during vacuum attachment.
  • the entire first major surface 303 of the substrate 301 may be in direct contact with the plate 327 while the first major surface 303 of the substrate is still removably attached relative to the plate 327.
  • the outer edge portion 321 of the substrate 301 is disposed between the outer portion 603b of the second carrier 313 and a surface 103 of the plate 327.
  • the method may further include the step of pressing the wedge 601 against and between the outer portion 603b of the second carrier 313 and the surface 103 of the plate 327.
  • FIG. 12 shows an alternative embodiment of a chamfered wedge 1201 that is similar to the chamfered wedge 403 shown in FIG. 4.
  • FIG. 13 shows another alternative embodiment of a rounded wedge 1301 that is similar to the rounded wedge 503 shown in FIG. 5.
  • the wedges of FIGS. 12 and 13 can also be defined by a tapered thickness of an insertion tool.
  • the wedges 403 and 503 may also be used in the process of FIGS. 11- 16
  • the method may further include initiating debonding at a location 1401 of an outer peripheral bonded interface 1101 (see FIG. 11) between the substrate 301 and the second carrier 313 by providing relative movement between the wedge 601 and the outer edge portion 321 of the substrate 301 to pry apart the outer portion 603b of the second carrier 313 and the surface 103 of the plate 327 while the first major surface 303 of the substrate 301 remains removably attached to the surface 103 of the plate 327.
  • the method can be performed without contacting any part of the substrate 301 with the wedge 601.
  • the method can further include the step of increasing a distance between a debonded portion of the second carrier 313 and the surface 103 of the plate 327 with the insertion tool 329 to debond further portions of the second carrier 313 from the substrate 301.
  • the insertion tool 329 includes a second portion 801 having a constant thickness 609.
  • the method can further include reducing a distance between the wedge 601 and the outer edge portion 321 of the substrate 301 at least until an inner surface of the second carrier 313 and the surface 103 of the plate 327 are spaced apart by a distance "D2" equal to the constant thickness 609 of the second portion 801 of the insertion tool 329.
  • the constant distance 609 of the second portion 801 of the insertion tool 329 can be from about 20 micrometers to about 40 micrometers greater than a distance "Dl" (see FIG. 11) between the inner surface of the second carrier 313 and the surface 103 of the plate 327 at the beginning of pressing the wedge against the second carrier.
  • the second portion 801 of the insertion tool 329 can include opposite parallel surfaces 803a, 803b defining the constant thickness 609.
  • the method may further comprise the step of increasing a distance "D3" between a debonded portion of the second carrier 313 and the surface 103 of the plate 327 with the insertion tool 329 engaging the inner surface of the outer portion of the second carrier 313 to debond further portions of the second carrier 313 from the substrate 301.
  • the method can further include the step of completely removing the second carrier 313 from the substrate 301.
  • the process illustrated in FIGS. 11-17 can be used to remove any substrate from a carrier.
  • the substrate may comprise at least one of a single glass substrate and a single silicon wafer, although other substrates may be provided in further embodiments.
  • the single substrate comprises a single substrate that includes functional components (e.g., a single glass substrate with a polarizer, color filter, thin-film transistor, etc.).
  • the substrate can comprise a stack of single substrates for example the illustrated stack of single glass substrates.
  • any of the single substrates may have a thickness of from about 50 micrometers to about 300 micrometers although other thickness as possible in further embodiments.
  • the carrier may include a thickness of from about 200 micrometers to about 700 micrometers although other thicknesses may be provided in further embodiments.
  • the setback lateral distance between the substrate and the carrier can be from about 2 mm to about 10 mm.
  • method steps of the disclosure may be performed in a variety of orders.
  • the method steps can be performed in any of the orders illustrated in FIG. 18.
  • the method can pass through steps 1807 and 1811 to initiate debonding of the first carrier from the substrate and optionally through step 1813.
  • the method may then include flipping the substrate over during step 1819 and then pass again through steps 1807 and 1811 to initiate debonding of the second carrier from the substrate and optionally through step 1813.
  • the method may proceed to step 1821 to completely remove one of the carriers from the substrate as shown in FIG. 10 and then completely removing the other carrier as shown in FIGS. 11 and 14-17
  • the method can pass through steps 1807 and 1811 to initiate debonding of the first carrier from the substrate and optionally through step 1813. Then, the method may proceed directly to step 1821 where the first carrier is completely remove from the substrate as shown in FIG. 10. Then, the substrate may be flipped over during step 1819 and then the method may pass again through steps 1807 and 1811 to initiate debonding of the second carrier from the substrate and optionally through the step 1813. Then, the method may proceed to step 1821 to completely remove the second carrier substrate as shown in FIGS. 11 and 14-17.
  • Embodiment 1 A method of processing a substrate with a first major surface of the substrate removably bonded to a first major surface of a first carrier and a second major surface of the substrate removably bonded to a first major surface of a second carrier, wherein an outer edge portion of the substrate is disposed between an outer portion of the first carrier and an outer portion of the second carrier, the method comprising the steps of: (I) pressing a wedge against the outer portions of the first and second carriers; and
  • Embodiment 2 The method of embodiment 1 , wherein steps (I) and (II) are performed without contacting any part of the substrate with the wedge.
  • Embodiment 3 The method of embodiment 1 or embodiment 2, wherein a first portion of an insertion tool includes a tapered thickness defining the wedge.
  • Embodiment 4 The method of embodiment 3, wherein after step (II), further comprising the step of increasing a distance between a debonded portion of the first carrier and the second carrier with the insertion tool to debond further portions of the first carrier from the substrate.
  • Embodiment 5 The method of embodiment 4, wherein the insertion tool further includes a second portion having a constant thickness and the method further includes reducing a distance between the wedge and the outer edge portion of the substrate at least until facing inner surfaces of the pried apart outer portions of the first and second carriers are spaced apart by a distance equal to the constant thickness of the second portion of the insertion tool.
  • Embodiment 6 The method of embodiment 5, wherein the constant distance of the second portion of the insertion tool is from about 20 micrometers to about 40 micrometers greater than a distance between the facing inner surfaces of the outer portions of the first and second carriers at the beginning of step (I).
  • Embodiment 7 The method of embodiment 5 or embodiment 6, wherein the second portion of the insertion tool includes opposed outer parallel surfaces defining the constant thickness.
  • Embodiment 8 The method of any one of embodiments 5-7, wherein after step (II), further comprising the step of increasing a distance between a debonded portion of the first carrier and the second carrier with a surface of the second portion of the insertion tool engaging the inner surface of the outer portion of the first carrier to debond further portions of the first carrier from the substrate.
  • Embodiment 9. The method of any one of embodiments 1-8, further comprising a step of inhibiting bending of the second carrier during step (II).
  • Embodiment 10 The method of embodiment 9, further comprising removably attaching a second major surface of the second carrier to a plate to inhibit bending of the second carrier during step (II).
  • Embodiment 11 The method of embodiment 10, wherein the plate comprises a vacuum plate, and the method further includes vacuum attaching the second major surface of the second carrier to the vacuum plate to inhibit bending of the second carrier during step (II).
  • Embodiment 12 The method of any one of embodiments 1-11, wherein the substrate comprises at least one of a glass substrate and a silicon substrate.
  • Embodiment 13 The method of any one of embodiments 1-12, wherein the substrate includes a single glass substrate with a thickness of from about 50 micrometers to about 300 micrometers.
  • Embodiment 14 The method of any one of embodiments 1-13, wherein at least one of the first carrier and the second carrier includes a thickness of from about 200 micrometers to about 700 micrometers.
  • Embodiment 15 The method of any one of embodiments 1-14, wherein a setback lateral distance between the substrate and at least one of the first carrier and the second carrier is from about 2 mm to about 10 mm.
  • Embodiment 16 The method of any one of embodiments 1-15, wherein after step (II), further comprising a step (III) of initiating debonding at a location of an outer peripheral bonded interface between the substrate and the second carrier by providing relative movement between the wedge and the outer edge portion of the substrate to pry apart the outer portions of the first and second carriers.
  • Embodiment 17 The method of embodiment 16, further comprising a step of inhibiting bending of the first carrier during step (III).
  • Embodiment 18 The method of embodiment 17, further comprising vacuum attaching a second major surface of the first carrier to a vacuum plate to inhibit bending of the first carrier during step (III).
  • Embodiment 19 The method of embodiment 16, wherein after step (III), further comprising a step (IV) of completely removing one of the first carrier and the second carrier from the substrate.
  • Embodiment 20 The method of embodiment 19, wherein after step (IV), further comprising a step (V) of completely removing the other of the first carrier and the second carrier from the substrate.
  • Embodiment 21 A method of processing a glass substrate with a first major surface of the glass substrate removably bonded to a first major surface of a first carrier and a second major surface of the glass substrate removably bonded to a first major surface of a second carrier, wherein an outer edge portion of the glass substrate is disposed between an outer portion of the first carrier and an outer portion of the second carrier, the method comprising the steps of:
  • step (III) initiating debonding at a location of an outer peripheral bonded interface between the glass substrate and the first carrier while the second major surface of the second carrier is attached to the plate, wherein initiating debonding is achieved by providing relative movement between the wedge and the outer edge of the glass substrate to pry apart the outer portions of the first and second carriers, wherein steps (II) and (III) are performed without contacting any part of the glass substrate with the wedge.
  • Embodiment 22 The method of embodiment 21, wherein the insertion tool includes a first portion including the wedge and a second portion having a constant thickness and the method further includes reducing a distance between the wedge and the outer edge portion of the glass substrate at least until facing inner surfaces of the pried apart outer portions of the first and second carriers are spaced apart by a distance equal to the constant thickness of the second portion of the insertion tool.
  • Embodiment 23 The method of embodiment 22, wherein after step (III), further comprising the step of increasing a distance between a debonded portion of the first carrier and the second carrier with a surface of the second portion of the insertion tool engaging the inner surface of the outer portion of the first carrier to debond further portions of the first carrier from the glass substrate.
  • Embodiment 24 A method of processing a substrate with a first maj or surface of the substrate removably bonded to a first maj or surface of a carrier, the method comprising the steps of:
  • Embodiment 25 The method of embodiment 24, wherein steps (II) and (III) are performed without contacting any part of the substrate with the wedge.
  • Embodiment 26 The method of embodiment 24 or embodiment 25, wherein a first portion of an insertion tool includes a tapered thickness defining the wedge.
  • Embodiment 27 The method of embodiment 26, wherein after step (III), further comprising the step of increasing a distance between a debonded portion of the carrier and the surface of the plate with the insertion tool to debond further portions of the carrier from the substrate.
  • Embodiment 28 The method of embodiment 27, wherein the insertion tool further includes a second portion having a constant thickness and the method further includes reducing a distance between the wedge and the outer edge portion of the substrate at least until an inner surface of the carrier and the surface of the plate are spaced apart by a distance equal to the constant thickness of the second portion of the insertion tool.
  • Embodiment 29 The method of embodiment 28, wherein the constant distance of the second portion of the insertion tool is from about 20 micrometers to about 40 micrometers greater than a distance between the inner surface of the carrier and the surface of the plate at the beginning of step (II).
  • Embodiment 30 The method of embodiment 28 or embodiment 29, wherein the second portion of the insertion tool includes opposed outer parallel surfaces defining the constant thickness.
  • Embodiment 31 The method of any one of embodiments 28-30, wherein after step (III), further comprising the step of increasing a distance between a debonded portion of the carrier and the surface of the plate with the insertion tool engaging the inner surface of the outer portion of the carrier to debond further portions of the carrier from the substrate.
  • Embodiment 32 The method of any one of embodiments 24-31, wherein the plate comprises a vacuum plate, and step (I) includes vacuum attaching the second major surface of the substrate to the vacuum plate.
  • Embodiment 33 The method of any one of embodiments 24-32, wherein the substrate comprises at least one of a glass substrate and a silicon substrate.
  • Embodiment 34 The method any one of embodiments 24-33, wherein the substrate comprises a single substrate.
  • Embodiment 35 The method of any one of embodiments 24-34, wherein the substrate comprises a glass substrate.
  • Embodiment 36 The method of any one of embodiments 24-35, wherein the substrate includes a single substrate with a thickness of from about 50
  • micrometers to about 300 micrometers.
  • Embodiment 37 The method of any one of embodiments 24-36, wherein the carrier includes a thickness of from about 200 micrometers to about 700 micrometers.
  • Embodiment 38 The method of any one of embodiments 24-37, wherein a setback lateral distance between the substrate and the carrier is from about 2 mm to about 10 mm.
  • Embodiment 39 The method of any one of embodiments 24-38, wherein after step (III), further comprising a step (IV) of completely removing the carrier from the substrate.

Abstract

Des procédés consistent à traiter un substrat comprenant une étape de pressage d'un coin contre au moins une partie extérieure d'un support lié au substrat. Le procédé comprend en outre une étape consistant à déclencher un décollage au niveau d'un emplacement d'une interface liée périphérique externe entre le substrat et le support. L'étape de déclenchement de décollement est obtenue en produisant un mouvement relatif entre le coin et une partie bord externe du substrat.
EP17703280.2A 2016-01-21 2017-01-19 Procédés de traitement d'un substrat Withdrawn EP3406112A1 (fr)

Applications Claiming Priority (2)

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US201662281302P 2016-01-21 2016-01-21
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TW201737766A (zh) 2017-10-16
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KR20180104674A (ko) 2018-09-21

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