EP3055442A1 - Metalloxid-target und verfahren zu seiner herstellung - Google Patents

Metalloxid-target und verfahren zu seiner herstellung

Info

Publication number
EP3055442A1
EP3055442A1 EP14781517.9A EP14781517A EP3055442A1 EP 3055442 A1 EP3055442 A1 EP 3055442A1 EP 14781517 A EP14781517 A EP 14781517A EP 3055442 A1 EP3055442 A1 EP 3055442A1
Authority
EP
European Patent Office
Prior art keywords
metal oxide
sputtering target
powder
alloy
μηι
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14781517.9A
Other languages
German (de)
English (en)
French (fr)
Inventor
Christoph Simons
Carl Christoph Stahr
Jens Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materion Advanced Materials Germany GmbH
Original Assignee
Heraeus Deutschland GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Deutschland GmbH and Co KG filed Critical Heraeus Deutschland GmbH and Co KG
Publication of EP3055442A1 publication Critical patent/EP3055442A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/082—Oxides of alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Definitions

  • the invention relates to a sputtering target for the production of layers, in particular of optical layers. Furthermore, the invention relates to a layer, in particular optical layer, and a device for producing a sputtering target. Furthermore, the invention relates to a method for producing a sputtering target.
  • a Zr target is known, which is used for the production of scratch-resistant outer layers.
  • the US patent describes a layer system with a protective Zr0 2 cover layer.
  • US 2007/0036986 A1 discloses a zirconium-containing target for producing particularly stable layers.
  • the layer system is produced by sputtering a ZrSi target in an oxygen- and nitrogen-containing atmosphere.
  • the layer system provided with this layer is characterized by improved durability and
  • the layer produced by the target is a UV-blocking layer system having a ZrSiOxNy layer as a cover layer and an NbZrOx layer as an intermediate layer.
  • the layers can be produced by sputtering using SiZr and NbZr Target.
  • NbZr target is known from US 2004/0258926 A1, wherein the NbZr layers include a double-Ag infrared reflective layer system.
  • the NbZr layers are made using an NbZr target, the layer system being characterized by improved durability and durability.
  • JP 05154950 B2 discloses a target which consists of the elements Al, Si, ZrSi.
  • the Zr is used in the form of a ZrSi compound
  • Sputtering targets is that due to the manufacturing of SiZr based systems used powder, such as the Zr or ZrSi powder, a potential risk of ignition and fire due to the exothermic metallic character of the powder is formed.
  • the object of the invention is therefore, inter alia, to develop a sputtering target that is light, safe and easy to handle.
  • the object of the invention is achieved with a sputtering target comprising the elements Si and Al or an Si-Al alloy in that the sputtering target further comprises at least one metal oxide or further comprising at least one combination of at least two metal oxides or further comprising a combination of at least one metal oxide in the form of an alloy or in the form of a mixture, so that by the elements Si and Al or their alloy and by the at least one metal oxide or a combination of a sputtering target with metal oxide.
  • the object of the invention is further achieved in a sputtering target comprising the element Si or an Si alloy in that the sputtering target further comprises at least one
  • Metal oxide or further comprising at least one combination of at least two
  • the use of at least one metal oxide moiety in a target provides improved mechanical strength and chemical resistance over the sputtered layers known in the art.
  • the oxidized Zr or the oxidized Zr compound as a respective alloying element can also be produced mechanically and chemically stable optical layers.
  • the metal oxide in the sputtering target is a metal oxide from the group Zr0 2 , Ta 2 O 5 , Y 2 O 3 , HfO, CaO, MgO, Ce 2 0 3 , Al 2 0 3 , Ti0 2 or Nb 2 0 5 .
  • a plurality of metal oxides in a sputtering target according to the invention for example a ZrO 2 metal oxide with TiO 2 fraction.
  • the metal oxide is a combination of the group of Zr0 2 and Y 2 0 3 .
  • the aluminum has a content of from 1 to 35 at%, preferably from 5 to 30 at%, particularly preferably from 10 to 20 at% or from 5 to 10 at% , on.
  • the metal oxide has a content of 10 to 50 mol%, preferably 10 to 20 mol% or 20 to 40 mol%.
  • the metal oxide in the sputtering target is a metal oxide from the group Zr0 2 , Ta 2 0 5 , Y 2 0 3 , HfO, CaO, MgO, Ce 2 0 3 , Al 2 0 3 , Ti0 2 or Nb 2 0 5 .
  • a plurality of metal oxides in a sputtering target according to the invention for example a ZrO 2 metal oxide with TiO 2 fraction.
  • the metal oxide is a combination of the group of Zr0 2 and Y 2 0 3 .
  • the metal oxide has a content of 10 to 50 mol%, preferably from 10 to 20 mol% or from 20 to 40 mol%.
  • the oxide alloy Zr0 2 : Y 2 0 3 has a Y 2 0 3 proportion of 4 to 8 mol% in the oxide alloy.
  • the invention relates to a layer, in particular an optical layer, produced by means of a sputtering target according to one of claims 1 to 11. Furthermore, the invention relates to a device for producing a sputtering target according to any one of claims 1 to 1 1, characterized in that the device comprises suitable means for producing the sputtering target according to one of claims 1 to 1 1.
  • the invention relates to a method for producing a sputtering target according to one of claims 1 to 1 1 with the aid of a device according to claim 13.
  • the invention relates to a method according to claim 14 or a method for producing a sputtering target according to one of claims 1 to 1 1, characterized in that a plasma spraying method is used as the manufacturing method, wherein the
  • Powder mixture comprising the elements Si and Al or an alloy of Si and Al and at least one metal oxide or the element Si or an alloy of Si and at least one metal oxide.
  • a sputtering target for the production of the sputtering target, preference is given to a sputtering target, preferably a tubular target, which is between 0.1 m and 10 m long and preferably about 3 to 4 m long
  • AI powder having an average particle size of 45 to 75 ⁇ , preferably 60 ⁇ , and
  • Metal oxide powder preferably metal oxide powder with Zr0 2 content, with a middle
  • Metal oxide powder preferably metal oxide powder with Zr0 2 content, with a middle
  • the sputtering targets according to the invention are sputtered in the non-pulsed or pulsed DC (direct current) mode and the sputtering behavior compared with a standard target, such as a SiAl 10 wt .-% target.
  • a standard target such as a SiAl 10 wt .-% target.
  • the essential point of comparison is an occurrence of the arcing behavior of the target.
  • MF medium-frequency
  • RF radio-frequency
  • a SiAIZr0 2 target is used, which is made of three powdered components, namely Si, Al and Zr0 2 or alternatively Y 2 0 3 stabilized Zr0 2 , is produced.
  • a target material having at least the phases Si, Al and Zr0 2 is formed .
  • the target material shows good sputtering capability in the DC process.
  • the arcing behavior of the target is comparable to that of a comparison target having comparative proportions in the form of SiAl or Si moieties.
  • Previous embodiments for producing a sputtering target or for DC sputtering or arcing behavior are also applicable and transferable to Si targets or Si-Al targets with a metal oxide content that do not have a Zr0 2 content.
  • previous designs may be for sputtering with MF operation or RF operation when a Si target or Si-Al target having a metal oxide portion, each not having a ZrO 2 content, is used.
  • Weight%) are to be interpreted alternatively with customary variations due to the manufacturing process.
  • the sputtering targets with a Si content according to the invention or an Si and Al content can be embodied as a pipe target or planar target.
  • a sputtering target with an Si and Al content with a ZrO 2 metal oxide content particularly preferably higher proportions of ZrO 2 are used.
  • the ZrO 2 used in the sputtering targets according to the invention is alternatively yttrium
  • an unstabilized ZrO 2 is used in the target according to the invention.
  • the respective sputtering target according to the invention in particular according to claim 1 or claim 7, has unavoidable impurities which have no influence on the properties of the respective alloy of the sputtering target.
  • the preferred alloys of sputtering targets according to the invention are tabulated, wherein the sputtering behavior is documented in the table below.
  • a 0.5 m SiAl5Zr0 2 35 wt% target (Run 6) is prepared as a tube target by plasma spray technique using Si, Al and ZrO 2 powder portions.
  • a spray powder having the following properties is used, namely that the mean grain size of the Si powder is 35 ⁇ m, the average grain size of the Al powder is 60 ⁇ m and the average grain size of the Zr0 2 powder is 30 ⁇ m.
  • the plasma spraying process for producing a SiAl5Zr0 2 35 wt .-% target is doing with a mixture of argon and hydrogen as a plasma gas in, for example, a
  • the two targets described above have the same behavior compared to a standard target, such as a SiAl 10 wt .-% target, on. Both targets each have a similarly low arcing rate in the sputtering process compared to a comparison target, such as a standard target with SiAl 10 wt .-%, on.
  • a 0.5 m SiAl5Y: Zr0 2 35 wt% target (Run 16) with the aid of plasma spraying using Si, Al, and Al Y 2 0 3 : Zr0 2 - powder proportions produce.
  • the Zr0 2 powder is stabilized yttrium. Even with this sputtering target produced according to the invention with a 35% strength by weight, yttrium-stabilized Zr0 2 content, the same DC sputtering behavior and arcing rate behavior result compared to a comparison target, such as a SiAl 10% by weight target.
  • sputter by means of MF operation or by means of RF operation above embodiments according to the table and optionally to compare.
  • the sputtering targets from the table for example, have a length of about 4 m.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Compositions Of Oxide Ceramics (AREA)
EP14781517.9A 2013-10-07 2014-10-06 Metalloxid-target und verfahren zu seiner herstellung Withdrawn EP3055442A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013016529.6A DE102013016529A1 (de) 2013-10-07 2013-10-07 Metalloxid-Target und Verfahren zu seiner Herstellung
PCT/EP2014/071355 WO2015052139A1 (de) 2013-10-07 2014-10-06 Metalloxid-target und verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
EP3055442A1 true EP3055442A1 (de) 2016-08-17

Family

ID=51663172

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14781517.9A Withdrawn EP3055442A1 (de) 2013-10-07 2014-10-06 Metalloxid-target und verfahren zu seiner herstellung

Country Status (6)

Country Link
US (1) US10475630B2 (zh)
EP (1) EP3055442A1 (zh)
JP (1) JP2016539246A (zh)
CN (1) CN105593400B (zh)
DE (1) DE102013016529A1 (zh)
WO (1) WO2015052139A1 (zh)

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CN104973864B (zh) * 2015-07-08 2017-03-29 北京冶科纳米科技有限公司 一种氧化铌平面靶材的制备方法及氧化铌平面靶材
DE102018112335A1 (de) * 2018-05-23 2019-11-28 Hartmetall-Werkzeugfabrik Paul Horn Gmbh Magnetronsputtervorrichtung
BE1026850B1 (nl) * 2018-11-12 2020-07-07 Soleras Advanced Coatings Bv Geleidende sputter doelen met silicium, zirkonium en zuurstof
CN111041432A (zh) * 2019-11-26 2020-04-21 广州市尤特新材料有限公司 一种旋转氧化锆靶材及其制备方法

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