EP3002996B1 - Neutrale teilchenstrahlquelle mit einem bandförmigen magneten und mikrowellen plasmaquelle - Google Patents

Neutrale teilchenstrahlquelle mit einem bandförmigen magneten und mikrowellen plasmaquelle Download PDF

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Publication number
EP3002996B1
EP3002996B1 EP15191835.6A EP15191835A EP3002996B1 EP 3002996 B1 EP3002996 B1 EP 3002996B1 EP 15191835 A EP15191835 A EP 15191835A EP 3002996 B1 EP3002996 B1 EP 3002996B1
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Prior art keywords
plasma
belt type
plasma chamber
neutral particle
particle beam
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EP15191835.6A
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English (en)
French (fr)
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EP3002996A1 (de
Inventor
Suk Jae Yoo
Seong Bong Kim
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Korea Basic Science Institute KBSI
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Korea Basic Science Institute KBSI
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Priority claimed from KR1020110055417A external-priority patent/KR101307019B1/ko
Priority claimed from KR1020120049386A external-priority patent/KR101383530B1/ko
Application filed by Korea Basic Science Institute KBSI filed Critical Korea Basic Science Institute KBSI
Publication of EP3002996A1 publication Critical patent/EP3002996A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges

Definitions

  • the present invention relates to a neutral particle beam source generating high flux.
  • Plasma has diverse range of applications, especially, it is an important technology element in the process of forming thin films.
  • High quality thin films deposition is required in the field of advanced material such as semiconductor, OLED, solar cell, LED, diamond thin film etc. and generating large area and high density plasma is the most important technique satisfying this requirement.
  • Sputtering technology is required for thin film formation of flexible electronic devices increasing its use lately, in other words, generating high density plasma through large area and at the same time minimizing thin film damage by high-energy particles and plasma electrons during thin film formation applying to flexible display, flexible lighting, flexible solar battery, flexible secondary battery etc.
  • low temperature process technology is required to be available for flexible plastic substrates on low temperature by plasma depositing high quality thin films.
  • atomic scale heating technique heating the thin-film surface atomic layer simultaneously during thin film depositing is needed for depositing high quality thin films at low temperature.
  • a neutral particle beam can heat by atom unit, a high flux neutral particle beam should be generated for the neutral particle beam to work its atom unit heating effect.
  • Conventional neutral particle beam sources have a plasma limiter between the neutralizing reflection plate and the substrate, which causes a problem in that the limiter functions as an obstacle for the neutral particle beam reaching the substrate.
  • the plasma limiter For resolving the problem of the existing neutral particle beam source, the plasma limiter should be removed, a high density plasma should be generated for resulting in an high flux neutral particle beam, and the interaction between plasma and substrate should be minimized, but such technology development is not easy.
  • a new sputtering system and a high flux neutral particle beam source without plasma limiter is needed for depositing thin films required in the manufacturing field such as flexible electronic device in other words, flexible display, flexible lighting, flexible solar battery, flexible secondary battery etc.
  • a large area, high density plasma source is developed suitable to the goal of new thin films, it can be easily embodied. Therefore, large area, high density plasma source development is the core technology, but it is not provided enough yet.
  • the purpose of the present invention is providing a neutral particle beam source using an improved plasma generating source.
  • the present invention provides a neutral particle beam source according to claim 1.
  • the belt type magnets need not specially to be driven to scan the magnet structure but enable the magnetic field to be distributed across a large area so that material can be deposited uniformly on a large area substrate.
  • the plasma chamber is made of nonmagnetic metal just like stainless steel and not using O-rings for vacuum sealing so that the inside of the chamber can be made in high vacuum and the mean free path of the neutral particle beam can be improved greatly compared with the case that the plasma chamber is composed of quartz or glass etc.
  • the neutral particle beam generating source with neutralizing reflecting plate provides a high flux neutral particle beam to a large area, especially minimizing plasma-substrate interaction without plasma limiter.
  • FIG. 1a there is the construction of the plasma generation source comprised in the neutral particle source of the present invention.
  • More than one pair of belt type magnets (400) is mounted on the side wall of the plasma chamber (100) that provides the plasma generating space, microwave irradiating equipment (200)(called launcher) is mounted on the upper side of the plasma chamber (100), microwave emits into the plasma chamber (100) from the microwave irradiating equipment (200).
  • the present invention from the microwave irradiating equipment (200), the place where microwave is incident into plasma chamber (100) is composed of complete opening without a dielectric window so that it can solve the problem that penetration ratio would drop as contaminating the window by deposition material during deposition process.
  • Fig. 1b and Fig. 1c are sectional views about one pair of belt type magnets (400) mounted on outer wall of the plasma generating source on Fig. 1a . It means that A type of belt type magnet ( Fig. 1b ) and B type of belt type magnet ( Fig. 1c ) are arranged up and down and a magnetic field such as the form of Fig. 1a can be formed. This belt type magnet can be arranged not just one pair but many pairs and due to this, inside of the plasma generating space, the same magnetic field curve line such as Fig. 1a is continuously distributed.
  • Belt type magnet showed on Fig. 1b and Fig. 1c can be, of course, composed of circle type, elliptical track or any closed polygon type.
  • the magnetic field continues without cutting and this is because of the consecutive construction of belt type magnets (400), and this construction makes microwave incident through the opening of the top not the side wall of the plasma chamber (100).
  • the magnetic field which forms consecutively improves plasma confinement remarkably by collecting electrons of the plasma that was generated and making them move on the trace of toroidal type and drift motion continuously along the side wall of the plasma chamber. In other words, by average electron motion, the trace is shown like a cutting perspective view of Fig. 1d , so that the plasma deposition effect greatly can be improved.
  • Plasma chamber (100) can be a cylinder type, a cylinder type that has circular or elliptical bottom or a faceted cylinder that has polygon bottom, the belt type magnet (400) is mounted on the side wall of plasma chamber (100) the belt type magnet is circle type, track, square or other various shapes depending on the structure of the plasma chamber (100) and forms Electron Cyclotron Resonance (ECR) magnetic field inside of the plasma chamber (100) Electron Cyclotron Resonance (ECR) magnetic field B res is like following formula.
  • B _ 2 ⁇ ⁇ m e e f f: microwave frequency, e: electron charge, m e : electron mass
  • microwaves irradiated from microwave irradiating equipment (200) can be higher than the plasma ion frequency, and the plasma ion frequency is according to the following formula.
  • ⁇ i 4 ⁇ ⁇ n i Z 2 e 2 / m i n i : ion density, Z: atom number, e: electron charge, m i : ion mass
  • the above plasma generating source can increase plasma density, and magnetic field by more than one pair of belt type magnets (400) mounted to the outer wall and the electric field of microwave irradiatied by microwave irradiating equipment (200) and the magnetic field are perpendicular to each other, forming ECR(Electron Cyclotron Resonance) plasma, thereby generating like this high density plasma across large area.
  • ECR Electro Cyclotron Resonance
  • it generates high density plasma in lower pressure high vacuum below 1mTorr, so it is good to be applied as it increases the mean free path of the particles.
  • microwave irradiating mode of the microwave irradiating equipment (200) generating plasma can be controlled in pulse mode or continuous mode as necessary so that its applicability can be widen.
  • microwave irradiating equipment (200) of Fig. 1a and Fig. 1d looks like circle type, elliptical type, track type or square type by using circle type and elliptical type.
  • Fig. 2 shows that slit (250) is formed on microwave irradiating equipment (200)
  • Fig. 3 shows that slit is formed on toroidal type microwave irradiating equipment(200).
  • Fig.4 shows square(rectangular) type or cylinder type microwave irradiating equipment (200).
  • microwave irradiating equipment (200) can strengthen its emission power by composing plurality.
  • Fig.5 shows a sputtering system (800) that is applied to the above plasma generating source.
  • the sputtering system (800) can generate plasma by heating electron not affecting on plasma ion motion because the microwave frequency is higher than the plasma ion frequency.
  • Bias voltage of the target (700,710,720) is applied at a lower frequency than plasma ion frequency so that it can control ion energy that is incident to the target, which is characterized in separating plasma generating power and ion acceleration voltage.
  • Plasma generating power and ion accelerated voltage is dualized in the sputtering system (800) to maintain high density plasma stably regardless of applied voltage to the target, whereby it differentiates from conventional sputtering system which is unstable at lower target applied voltage.
  • a conventional sputtering system has high target bias voltage so that it damages on thin film by generating high energy particles.
  • the present sputtering equipment (800) can decrease target bias voltage to minimize the problems like the above, which is very advantageous.
  • high density plasma can be uniformly distributed near the target (720) thanks to the magnetic field structure of belt type magnet (400), etching distribution of the target becomes uniform so that it can increase usage efficiency of the target (720).
  • the target (720) can be composed of large area and it is because that plasma distribution can be formed high density across large area.
  • the bias voltage of the target (700,710,720) on the present sputtering system (800) can be modified in various way such as D.C. voltage, alternating voltage, D.C. pulse, A.C. pulse or voltage combined with the above voltages depending on needs so that it is possible to control the character of the thin film.
  • the target (720) mounted parallel to the upper plate of the chamber and target (700, 710) mounted on the side wall of it are composed of different materials, so it is very convenient to be able to co-deposite host material and dopant at the same time.
  • Zn from one target (700), In 2 O 3 from another target (710) and Ga 2 O 3 from the other target(720) can be formed, so IGZO can be formed on the substrate.
  • IGZO can be formed on the substrate.
  • it can minimize thin film damage at the same time by negative oxygen ion and also it has the merit of increasing deposition rate.
  • Targets (700,710) mounted on the inner wall of plasma chamber can be composed of a plurality of target pieces to be arranged in radial directions.
  • Target (720) arranged in the plasma chamber in a horizontal plane can be mounted on upper plate of the plasma chamber, or at the center of the inside of the chamber, and these can also be composed of many pieces.
  • targets can be composed of many different materials, but it can be made of same material but adjusted their arrays for high speed, high efficiency, and uniform thin film deposition.
  • the target composition such as large area target etc. is very free, and targets (700, 710) mounted on the inner wall of the plasma chamber are surrounded by the magnetic field from the belt type magnet (400) and a high density plasma near the target can be generated so that it is possible to get high efficiency sputtering.
  • the plasma chamber (100) is composed of a cylinder type with elliptical tract bottom or a faceted cylinder when a lot of targets (700,710) are installed in inner wall of like this plasma, it has the merits to be convenient to install many targets for reaching the optimum levels of numbers and percentage of components on thin film and to control the magnetic field effect by the belt type magnet (400) as well.
  • such a sputtering system generates a high density plasma at high vacuum and straight particle sputtering is improved, and thin film aspect ratio with trench pattern can be improved.
  • Such a sputtering system can control plasma generating power and ion accelerated voltage independently, and magnetic field formed by belt type magnet confine plasma charged particle, whereby it can minimize plasma-substrate interaction without extra plasma limiter so that it minimizes thin film damage by plasma.
  • plasma limiters can be installed on the boundary of the chamber as necessary, which is obvious to ordinary person of the technical field.
  • Fig. 6 shows a neutral particle beam source (900) structure modified from the above sputtering system (800).
  • Targets (700, 710, 720) of the sputtering system (800) are replaced with a neutralizing reflecting plate (300) composed of high conductivity, thereby it will become neutral particle beam generating source (900).
  • a neutralizing reflecting plate (300) composed of high conductivity
  • the neutral particle beam generating source (900) according to this embodiment generates a neutral particle beam of high flux on the same principle of above sputtering system (800) generating a high density plasma.
  • the neutral particle beam generating source of this embodiment differentiates from a conventional neutral particle beam generating source because it minimizes plasma-substrate interaction without a plasma limiter.
  • the advantage by increasing the mean free path shows in a same way with high flux of the neutral particle beam on account of generating high density plasma under high vacuum.
  • plasma limiters can be installed on the boundary of the chamber as necessary, which is obvious to ordinary person of the technical field.
  • Fig. 7 shows thin film deposition system (1000) made by combining the above sputtering system (800) and neutral particle beam generating source.
  • the above thin film deposition system (1000) has the merit of forming high quality thin film at low temperature process by providing necessary energy for thin film forming additionally due to neutral particle beam and by providing particle that consists of thin film due to sputtering system (800) at the same time.
  • the thin film deposition system (1000) is embodied by installing two neutral particle beam generating sources (900) at both sides based on one sputtering system (800) at center.
  • two neutral particle beam generating sources (900) at both sides based on one sputtering system (800) at center.
  • it can be modified in various different ways by ordinary person of the technical field.
  • one sputtering system (800) and one neutral particle beam generating source (900) can be combined.
  • Fig. 8 shows the construction of a neutral particle generating source of the present invention further comprising a limiter (500). Even though it minimizes plasma-substrate interaction without limiter, charged particles can be eliminated more completely when the neutral particle beam emits from the plasma chamber (100) into the process chamber that has a substrate (600) by further installing a limiter (500).
  • the belt type magnet (400) can be constructed with not only permanent magnets but also electromagnets which can make the microwave frequency increase, so that the plasma density can be improved.
  • the present invention can be used widely in the process for forming the thin film using plasma, and it can use plasma generating source and thin film deposition system in the field of advanced material especially, LED, solar battery, LED, diamond thin film etc.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
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  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Electrodes Of Semiconductors (AREA)

Claims (3)

  1. Neutralteilchenstrahlquelle umfassend eine ein Plasma erzeugende Quelle mit einer Plasmakammer (100); und eine oder mehrere neutralisierende reflektierende Platten (300) mit hoher Leitfähigkeit, die in der Plasmakammer (100) installiert sind;
    wobei die ein Plasma erzeugende Quelle umfasst:
    die Plasmakammer (100), die einen ein Plasma erzeugenden Raum bildet;
    wenigstens ein Paar von Bandtypmagneten (400), die die Außenwand der Plasmakammer (100) umgeben; und
    eine Mikrowellen ausstrahlende Ausrüstung (200), die Mikrowellen in den ein Plasma erzeugenden Raum ausstrahlt; wobei die Mikrowellen ausstrahlende Ausrüstung (200) dazu konfiguriert ist, Mikrowellen in einem Pulsmodus oder in einem kontinuierlichen Modus auszustrahlen; und wobei die neutralisierende reflektierende Platte (300) entlang der innenseitigen Wand der Plasmakammer (100) angehaftet ist, um durch das Magnetfeld umgeben zu sein, das in dem ein Plasma erzeugenden Raum durch das wenigstens eine Paar von Bandtypmagneten (400) gebildet wird, und wobei mehr als eine neutralisierende reflektierende Platte (300) ferner parallel auf der oberen Seite der Plasmakammer (100) angeordnet ist, derart, dass ein Neutralteilchenstrahl erzeugt wird;
    dadurch gekennzeichnet, dass das wenigstens eine Paar von Bandtypmagneten einen oberen Bandtypmagneten, der die Außenwand der Plasmakammer (100) umgibt, und einen unteren Bandtypmagneten umfasst, der niedriger als der obere Bandtypmagnet angeordnet ist und die Außenwand der Plasmakammer (100) umgibt, und
    wobei der obere Bandtypmagnet parallel zu dem unteren Bandtypmagneten angeordnet ist, und
    wobei durch das wenigstens eine Paar von Bandtypmagneten (400) ein Magnetfeld innerhalb des ein Plasma erzeugenden Raums gebildet wird, und
    wobei die Mikrowellen ausstrahlende Ausrüstung (200) eine Ringtypwellenführung, eine Toroidtypwellenführung oder eine Bahntypwellenführung umfasst, die auf der oberen Seite der Plasmakammer (100) montiert sind, und
    wobei die Wellenführungen einen Schlitz umfassen, der eine Öffnung ohne ein Fenster ist, und Mikrowellen durch den Schlitz in die Plasmakammer (100) einfallen, und
    wobei die Plasmakammer (100) und die Mikrowellen ausstrahlende Ausrüstung (200) gemeinsam evakuiert sind, und
    wobei Mikrowellen, die in das Magnetfeld ausgestrahlt werden, das in dem ein Plasma erzeugenden Raum durch das wenigstens eine Paar von Bandtypmagneten (400) gebildet wird, ein ECR(Elektron-Zyklotron-Resonanz)-Plasma bilden, um eine Plasmadichte entlang der Magnetfeldverteilung zu steigern.
  2. Neutralteilchenstrahlquelle nach Anspruch 1, wobei die Plasmakammer (100) aus einer von einem Zylindertyp, einem Zylindertyp mit einem elliptischen Bahnboden oder einer polygonalen Säule mit einem polygonalen Boden besteht.
  3. Neutralteilchenstrahlquelle nach Anspruch 1, ferner umfassend eine Begrenzungseinrichtung (500), die an dem unteren Ort des ein Plasma entladenden Raums zum Begrenzen von Plasmaionen und -elektronen mit Ausnahme von Neutralteilchen zu dem ein Plasma entladenden Raum installiert ist.
EP15191835.6A 2011-06-09 2012-06-01 Neutrale teilchenstrahlquelle mit einem bandförmigen magneten und mikrowellen plasmaquelle Active EP3002996B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020110055417A KR101307019B1 (ko) 2011-06-09 2011-06-09 벨트형 자석을 포함한 중성입자 빔 발생장치
KR1020120049386A KR101383530B1 (ko) 2012-05-09 2012-05-09 벨트형 자석을 포함한 플라즈마 발생원
PCT/KR2012/004345 WO2012169747A2 (ko) 2011-06-09 2012-06-01 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템
EP12797155.4A EP2720518B1 (de) 2011-06-09 2012-06-01 Plasmaerzeugungsquelle mit einem bandförmigen magneten und dünnfilmabscheidungssystem damit

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EP12797155.4A Division EP2720518B1 (de) 2011-06-09 2012-06-01 Plasmaerzeugungsquelle mit einem bandförmigen magneten und dünnfilmabscheidungssystem damit
EP12797155.4A Division-Into EP2720518B1 (de) 2011-06-09 2012-06-01 Plasmaerzeugungsquelle mit einem bandförmigen magneten und dünnfilmabscheidungssystem damit

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EP3002996A1 EP3002996A1 (de) 2016-04-06
EP3002996B1 true EP3002996B1 (de) 2020-03-25

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EP12797155.4A Active EP2720518B1 (de) 2011-06-09 2012-06-01 Plasmaerzeugungsquelle mit einem bandförmigen magneten und dünnfilmabscheidungssystem damit

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US (1) US9589772B2 (de)
EP (2) EP3002996B1 (de)
JP (2) JP5774778B2 (de)
CN (1) CN103766002B (de)
WO (1) WO2012169747A2 (de)

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