EP2992541A1 - Procédé et dispositif permettant de produire des éléments de contact pour des contacts de commutation électriques - Google Patents

Procédé et dispositif permettant de produire des éléments de contact pour des contacts de commutation électriques

Info

Publication number
EP2992541A1
EP2992541A1 EP14730490.1A EP14730490A EP2992541A1 EP 2992541 A1 EP2992541 A1 EP 2992541A1 EP 14730490 A EP14730490 A EP 14730490A EP 2992541 A1 EP2992541 A1 EP 2992541A1
Authority
EP
European Patent Office
Prior art keywords
contact
contact element
carrier
fast
contact carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14730490.1A
Other languages
German (de)
English (en)
Inventor
Carsten Schuh
Dirk Pohle
Wolfgang Rossner
Klaus SCHACHTSCHNEIDER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP2992541A1 publication Critical patent/EP2992541A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
    • H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
    • H01H11/048—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts by powder-metallurgical processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1003—Use of special medium during sintering, e.g. sintering aid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/10—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of articles with cavities or holes, not otherwise provided for in the preceding subgroups
    • B22F5/106—Tube or ring forms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/12—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H33/00—High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
    • H01H33/60—Switches wherein the means for extinguishing or preventing the arc do not include separate means for obtaining or increasing flow of arc-extinguishing fluid
    • H01H33/66—Vacuum switches
    • H01H33/664—Contacts; Arc-extinguishing means, e.g. arcing rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • B22F2003/1051—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2202/00—Treatment under specific physical conditions
    • B22F2202/05—Use of magnetic field
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2202/00—Treatment under specific physical conditions
    • B22F2202/06—Use of electric fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches
    • H01H1/0206—Contacts characterised by the material thereof specially adapted for vacuum switches containing as major components Cu and Cr

Definitions

  • the invention relates to contact elements for electrical
  • the invention relates to contact elements for such switching contacts, as used for vacuum tubes (vacuum interrupters). More specifically, the invention relates to the production of contact element semifinished products for electrical switch contacts, the production of contact elements for electrical switch contacts and the production of electrical switch contacts and an apparatus for producing these parts.
  • the contact material used is usually a mixture of two or more metallic or non-metallic components.
  • the mixture comprises at least one very highly conductive component and one component with high mechanical and thermal resistance.
  • Examples of these are CuCr or WCAg or WCu, where Cu (copper) or Ag (silver) is responsible for the good electrical conductivity and Cr (chromium), WC (tungsten carbide) or W (tungsten) for the erosion resistance and good mechanical properties is.
  • Methods in which an electric or electromagnetic field ⁇ ULTRASONIC supports a sintering process and / or causes are known in the art and are termed FAST (field assisted sintering technologies) to- summarized. It is known to produce electrical switch contacts with a FAST method.
  • the core idea of the invention is to carry out the sintering process on a metallic substrate and thereby produce contact element semifinished products for electrical switch contacts, contact elements for electrical switch contacts and / or electrical switch contacts, in particular for vacuum tubes (claim 1). While in the prior art sintering always results in objects made entirely of sintered material, in the present invention the metallic substrate is always an integral part of the later object. The substrate is either the contact carrier of the later switching contact (claims 2 to 4) or else a section of the later contact element (claims 5 to 7).
  • the advantageous properties of the known FAST method can be used particularly well for the production of suitable contact elements.
  • the contact material used for the contact elements of great importance, since it must meet certain requirements. It is known that porosity, grain size distributions, doping and impurities, hardness, density and other parameters greatly increase the switching performance of the contact material. influences.
  • An illustrative example are micropores, in particular ⁇ near-surface pores, which can lead to a deterioration of the vacuum, to failure of the vacuum tube in a melting of contact material.
  • Another problem is the solubility of Cr in Cu. Although this solubility is very low. However, already ge ⁇ rings tracks lead dissolved Cr in Cu to a marked reduction in the electrical conductivity of the copper. Furthermore, the spatial distribution of the components plays a role. Larger zones in which only one component is present must be avoided.
  • contact elements which are often required as contact elements for vacuum tubes in the form of contact discs
  • suitable contact materials usually made using very different methods, u. a. by hot pressing, sintering, sintering and subsequent infiltration, casting and forming, or arc remelting.
  • These methods are very complex by machine, take a long time and / or lead to contact elements with insufficient quality. This results in a high rejection rate.
  • the test of the quality of the contact elements u. a. on hardness, porosity and conductivity because of the often fluctuating material quality very complex.
  • the contact elements produced by means of FAST methods are also qualitatively superior to the contact elements produced by means of conventional methods.
  • these contact elements with adapted process control have the following properties: percent density and thus minimal porosity, small grain or crystallite sizes, high purity, dissolution of the components hardly ever occurs.
  • the material properties of these contact elements are also very accurately reproducible, so that quality fluctuations, as they come from the
  • FAST FAST is therefore also well suited for the production of contact elements, because the selection of suitable process parameters can very selectively influence certain properties of the contact material and can therefore be adapted to specific requirements. For example, by using lower temperatures and pressures, a defined porosity can be generated or, by a longer residence time at maximum temperature, a targeted solution of components at the grain boundaries can be achieved, which leads to the formation of precipitation microstructures and / or defined gradient formation on cooling.
  • FAST techniques include Electric Current Assisted / Activated Sintering (ECAS), Spark Plasma Sintering (SPS), Electro Sinter Forging (ESF), Pulsed Electrical Current Sintering (PECS), Current Activated Pressure Assisted Densification (CAPAD), Electric Pulse Assisted Consolidation (EPAC), Plasma Activated Sintering (PAS), Resistant Sintering (RS), Electrical Discharge Compaction (EDC), Dynamic Magnetic Compaction (DMC).
  • ECAS Electric Current Assisted / Activated Sintering
  • SPS Spark Plasma Sintering
  • ESF Electro Sinter Forging
  • PECS Pulsed Electrical Current Sintering
  • CAPAD Current Activated Pressure Assisted Densification
  • EPAC Electric Pulse Assisted Consolidation
  • PAS Plasma Activated Sintering
  • RS Resistant Sintering
  • EDC Electrical Discharge Compaction
  • DMC Dynamic Magnetic Compaction
  • FAST method in the context of this invention have in common that an electric or electromagnetic field supports the production process of the semi-finished products, for example in the form of disc-shaped contact elements, or the manufacturing process of the finished contact elements.
  • this herstel ⁇ development process is, depending on the type of the FAST procedure for.
  • sintering hot or cold pressing, uniaxial or isostatic pressing.
  • a FAST method is understood as a method in which an electric or electromagnetic field is used to assist or induce a sintering process.
  • a correspondingly modified hot or cold-pressing process in which a sintering process is triggered by the superimposed current flow by the resulting Joule heat is understood as a FAST process in the sense of the invention.
  • the heating and cooling rates as well as the residence time at maximum temperature. These can be easily varied depending on the requirements of the material produced and the FAST process used.
  • the FAST method used is preferably designed so that the residence time of the sintered product at the maximum sintering temperature is as short as possible.
  • the residence time is preferably from less than a few minutes in the indust ⁇ -material manufacturing process typically less than five minutes, to less than a few seconds. This makes it possible to realize high and economically very attractive production rates.
  • the FAST method used is preferably also designed so that very fast heating and cooling rates are realized.
  • the heating and cooling rates are preferably greater than 100 K / min. Due to the short residence time and / or the large heating and cooling rates can be detrimental thermodynamic effects such as phase formation, Phasenzerset ⁇ pollution, phase reactions, interdiffusion, suppress.
  • compositions of matter which are not compatible with conventional production methods and therefore can not be combined to form a workpiece.
  • Such substance compositions are now possible and form a homogeneous, finely distributed microstructure such that both the conductivity and the arc resistance is ensured at each individual point of the contact element.
  • contact materials can be produced which have a microstructure which is defined solely by the specification of the starting materials used, usually in powder form.
  • nanoscale powders or additives are used to produce the contact material, microstructures of which can be represented by nanoscale phases or grain structures. This is possible, in contrast to all conventional production methods, since the powder structures do not change or hardly change because of the very rapid process.
  • nanoscale phases are here understood in particular phases having feature sizes smaller than 1 ⁇ .
  • Such nanoparticulate structures give a very high mechanical stability of the contact material, can compensate for extreme stresses by superplasticity better and show with a suitable size distribution of the phases and grains high aging stability.
  • the production process is considerably simplified compared with conventional production processes in which a raw body, for example in the form of a solid cylinder, always first results from remelting. which first has to be brought into the desired shape, for example by sawing the cylinder to obtain disc-shaped contact elements.
  • the contact element can have a significantly low material thickness. Minimum dimensions, as required for semi-finished products, to allow holding of the semi-finished product for the purpose of processing, such as pinching or clamping the semifinished product in a CNC milling machine, then no longer need to be held up.
  • the invention is not limited to specific contact element shapes. In particular, different contact geometries can be realized. In addition to simple plate contacts, for example axial magnetic field (AMF) contacts or radial magnetic field (RMF) contacts, the latter for example in the form of spiral contacts or slotted pot contacts, can be realized.
  • AMF axial magnetic field
  • RMF radial magnetic field
  • These and other suitable Kunststoffgeome ⁇ trien serve to avoid, by means of a positive influence of the arc on the one hand overheating and melting of the contact surface during the turn-on and the erase phase, and on the other hand the formation of anode spots when switching large currents.
  • the invention is not limited to the already mentioned material systems CuCr and WCAg. These are given only ⁇ way of example.
  • the invention is applicable to any suitable Ma ⁇ material combination, which is preferably at least two components, of which one component is high temperature stable or reduces the Versch volunteerne Trent the contacts, and the other component is very conductive.
  • the invention is not limited to specific applications. However, it is particularly advantageous for use in the production of contact elements for switching contacts for vacuum tubes for each voltage range.
  • Other applications of contact elements produced by the process according to the invention are, for example, switching contacts in Schüt ⁇ zen, relays, buttons or switches different switching capacity.
  • the above-mentioned, currently used in the manufacture of contact elements conventional methods, such as hot pressing, sintering or arc remelting, are not only very complex, slow and subject to quality problems. at This type of production are always more or less complex connection processes necessary to connect the Kunststoffele ⁇ ment with a contact carrier in order to obtain a finished switching contact.
  • the already finished contact elements are attached by means of a soldering or welding process to the contact carriers.
  • the ⁇ ses multi-stage, slow approach is one reason why the production of switch contacts is comparatively expensive. In addition to increased process costs, comparatively high storage costs are also recorded.
  • the Kon ⁇ balance carrier already has at least a first component of the contact material and at least a second component of the contact material by means of a FAST method in the contact carrier in a way is introduced, that it is then in a certain spatial area of the contact carrier is located.
  • the contact material is pressed into a softening carrier material and, in a region of the contact carrier enclosing the surface near the surface, a material composition which largely corresponds to the material composition of conventionally produced contact elements is formed.
  • the contact ⁇ carrier for example, inter alia of copper-based materials.
  • the contact element must have a high chromium content, in particular on the switching path facing surface, there to a certain depth of Maisele ⁇ ment, since Cr increases the hardness and erosion resistance and at the same time reduces the abrasion and Versch bridgeneist.
  • Cr adversely affects the conductivity of the contact element. It also leads to embrittlement of the contact material.
  • chromium powder is about twice as expensive as copper powder.
  • the chromium content can be reduced in those areas of the contact element-carrier element combination where it is not needed, up to a complete elimination of chromium in these areas. This significantly reduces the overall chromium content in the contact element / contact carrier combination. At the same time, in those areas where a high chromium content is necessary for the functionality of the contact element, no reduction of the chromium content is provided.
  • contact materials based on WCu as z As used in high-voltage switches, and for any other contact material in which at least one of the main components is equal to the contact carrier material.
  • the described type of single-stage production of a contact carrier-contact element combination can be analogously to other contact materials, which consist of at least two components transmitted.
  • tungsten and tungsten carbide are considered as the component of the contact material which can be introduced into the contact carrier, the contact carrier preferably having Cu as the contact material component.
  • the contact element always has a minimum material thickness of, for example, three to five millimeters of CuCr or Cu
  • this contact element was manufactured as a semi-finished and had to be post-machined before joining with the contact carrier,
  • the area of the contact carrier that is now producible and takes over the function of the contact element can have a significantly lower material thickness, for example, a thickness of only one millimeter CuCr or WCu.
  • contact material can be saved.
  • the contact carrier provided with the contact region in other words the contact carrier contact element combination, can be further processed later, for example by a machining operation by means of a milling cutter.
  • the novel manufacturing process eliminates the limitations of manufacturing and allows new, flexible manufacturing processes. At the same time, by a flexible design of the contact carrier novel designs and contact geometries on particularly easy way to be realized. In addition to new ⁇ rates in terms of material selection and microstructure are mög ⁇ Lich.
  • the proposed method for the direct production of a contact element-contact carrier combination is particularly advantageous for switching contacts in the field of medium and high voltage technology used. While previously described how the contact carrier itself performs the function of the contact element, it is proposed according to a further idea of the present invention to maintain the bipartition of contact carrier and contact element, however, in turn doing multiply the contact element. This is the already described above
  • the contact element comprises at least two adjacent contact element sections.
  • a first contact element section is formed by a volume element already present before the start of the FAST method.
  • a second contact element section connected to the first contact element section is produced by the FAST method.
  • the volume element is preferably an electrically conductive body, in particular a solid metallic semi-finished product, for example in the form of a disk or a ring.
  • the connection between the contact element sections is produced by the FAST method.
  • the second contact element section is constructed on the first contact element section.
  • the first contact element section serves as a carrier for the second contact element section.
  • connection of contact element and contact carrier is also made by the FAST method, so that the additional step the connection of the contact element with the contact carrier, for example by soldering or welding, is eliminated.
  • the multi-part contact element is connected by means of FAST with the contact carrier.
  • the production of the multi-part contact carrier, and connecting with the contact carrier is again carried out in a single Pro ⁇ zessön.
  • the FAST method is used simultaneously both for sintering contact material and for connecting the contact element to the contact carrier in order to produce a switching contact.
  • a CuCr contact element section is produced on a metallic semifinished product. If the metallic semifinished product does not have a Cr content or a lower Cr content than the CuCr contact element section, the Cr content in the contact element as a whole decreases, which leads to a higher electrical conductivity and thus to lower losses and to a lower heating of the vacuum tube , By saving Cr material, there is a potential for cost reduction because Cr powder is about twice as expensive as Cu powder. The same applies in turn, if instead of chromium other components are used, such as tungsten or tungsten carbide. In addition, a certain total thickness of the contact element can be obtained inexpensively, which leads to an easier processing, z. B. a better clamping in CNC milling. In addition, the metallic semifinished product can be designed so that the toughness of the contact element formed on the semifinished product is increased compared to a variant without volume element.
  • Another idea of the present invention which is particularly easy to associate with the core idea of the present invention and allows some particularly advantageous properties of the contact elements, is to produce the contact element such that the material composition and / or at least one property of the contact material in at least one Body direction of the contact element changed (claim 8).
  • the change is preferably gradual, ie in successive stages (claim 9).
  • Such a stepwise change in one embodiment of the invention is so fine-grained that there is a guasi-continuous or continuous change. Contact elements designed in this way can always be produced particularly simply if powdered starting materials are used in the FAST process.
  • the proportion of a component of the contact material in a defined way.
  • the proportion of the component can be increased or decreased in order to achieve a desired change in the properties of the Kunststoffele ⁇ ment.
  • the Cr content in those areas of the CuCr contact element in which Cr is not needed can be reduced to zero without sacrificing a high Cr content in those areas in which it is present is necessary for the functionality of the contact element. Since the chrome particles are usually coarser than the copper particles, the powder bulk density increases with decreasing Cr content, which facilitates the FAST process and increases productivity.
  • the movement of the arc can be positively influenced.
  • the FAST method in the production of the contact element it is possible to produce contact elements with very finely graduated changes in the material composition or the material properties in the radial direction. This can be achieved a particularly large effect in the arc control.
  • the production of such contact elements is possible in a particularly simple manner, without, for example, individually produced contact element sections having in each case homogeneous material composition having to be complexly connected to one another.
  • FAST processes are therefore particularly suitable for the production of such contact elements, whereas conventional processes with sintering times of typically several hours are inappropriate from the outset.
  • production processes in which at least one component is converted into the melting phase are ruled out. If pulverulent starting materials are used, in addition to the main components, other additives, such as tellurium or bismuth, which serve, for example, to improve the switching properties, can be added in the same way to the contact element. It is therefore not only a chromium or tungsten gradient, but also, for example, a tellurium or bismuth gradient can be adjusted. This is not possible in many conventional production methods for contact elements, such as an arc remelting process.
  • the material composition or the change in the material composition can be made individually for each contact element.
  • a property of the contact material in at least one body direction of the contact element can be changed, for example by at least one of the components of the Maismateri- be used as different grain sizes, so that a gradual change of Grain size of this component within the contact element results.
  • the possibility of optimizing the properties of the contact element results from a material composition and / or material property and / or structural property changing within the contact element.
  • a graded powder bed is used instead of a homogeneous powder mixture.
  • the layer sequence of the gradient structure can also be represented by the stacking and lamination of green sheets cut to size. These in their material composition, z. B. gradual variation of Proportion of Cu and Cr, adapted green sheets may, for. B. are produced by tape casting.
  • FIG. 2 shows a first switching contact
  • FIG. 3 shows a second switching contact
  • FIG. 6 shows a PLC system for producing a first contact carrier contact element combination
  • FIG. 7 shows a SPS system for producing a second contact carrier contact element combination
  • 10 shows a PLC system for producing a second contact element with inserted volume element
  • 11 shows a PLC system for the single-stage production of a contact element connected to a contact element with inserted volume element
  • FIG. 14 shows a contact element connected to a contact carrier with inserted volume element.
  • switching arrangement comprises, for example, two coaxially arranged switch contacts 3, 4 with contact elements 5, the buttons (contact surfaces) 6 facing each other, see FIG.
  • the contact elements 5 are seated on contact carriers 7.
  • one of the switching contacts 3 is movable in the axial direction 8.
  • the movable switching contact 3 is connected to a Move ⁇ handy terminal pin 9, while the fixed switch contact 4 is connected to a fixed terminal pin 10th
  • the following describes by way of example methods for producing contact element semifinished products for electrical switching contacts 3, 4 for vacuum tubes 1, methods for producing contact elements 5 for electrical switching contacts 3, 4 for vacuum tubes 1 and methods for producing electrical switching contacts 3, 4 for vacuum tubes 1. All these methods have in common that the production of the contact element 5 takes place by means of a FAST process. That means a electric or electromagnetic field supports the production by this field under ⁇ supported and / or causes a sintering process.
  • the described methods are not limited to specific contact geometries. Instead, the methods are applicable to contact elements 5 having different contact geometries. 2 shows an example of a simple switching contact (plate contact) 11, consisting of a disc-shaped contact element.
  • FIG. 3 shows a radial magnetic field (RMF) contact in the form of a slotted pot contact with an annular contact element 13 on a slotted contact carrier 14 and
  • FIG. 4 shows an axial magnetic field (AMF) contact with a radially slotted contact disk 15 on a spirally slotted contact carrier 16.
  • FIG and further contact geometries, as well as the arrangement of slots 17 in the contact carrier 7 and the contact element 5 are known in the art and not the subject of the invention.
  • the spark plasma sintering (SPS) method is used by way of example without being restrictive. Can also be used other drive FAST comparison, the OF INVENTION ⁇ to the invention peculiarities true driving accordingly this encryption and are applicable.
  • the powdery sintered material 19 which forms the subsequent compact is located on the underfloor 21 of the sintering mold (die) formed by the pressing tool 20.
  • the compact is either a semi-finished product (not shown), which has to be post-machined in a later intermediate step, or a contact element 5 which is close to the end-cone or already finished.
  • both the pressing tool 20, and the compact are heated directly. This is done by supplying energy via the pressing tool 20 from the outside and by a direct passage of current through the compact itself.
  • two electrodes 22 assigned to the two outer end faces of the compact are connected to a DC impulse source (not shown). By the generated electric or electromagnetic field, a sintering process is initiated, which forms the desired sintered body of the sintered material.
  • the required pressing pressure symbolized by two arrows 23 in FIG. 5, is applied by an upper punch 24 connected to a hydraulic system (not shown), which cooperates with a lower punch 25.
  • the die walls 26 are provided with temperature sensors 27 and, if necessary, with an additional electric heater (not shown).
  • the pressing tool 20 is fully ⁇ constantly in a water-cooled vacuum container (not shown).
  • sintering material 19 a mixture of two or more metallic or non-metallic components is used.
  • a suitable choice of materials is known to the person skilled in the art.
  • a powdered copper-chromium sintered material 19 is used.
  • a combination with, for example, 50% to 75% copper and 25% to 50% chromium has proven.
  • the exact composition of the components used, that is, for example, whether pure copper powder, a copper base material or the like is used for the copper, is of minor importance to the present invention. The same applies mutatis mutandis to all other components of the sintered material 19th
  • a suitable contact carrier 7 means a soldering or welding process to an electrical switch ⁇ contact 3, 4 can be connected
  • a suitable Pulverge ⁇ mix for example, CuCr
  • the die is adapted to the shape of the semi-finished product or of the contact element 3, 4 to be produced.
  • the shape is also disk-shaped. With the insertion of the upper punch 24, the die is closed upwards. This is followed by the sintering process.
  • a one-piece contact carrier / contact element combination 30 is produced, see FIG. 12, by changing a region 31 of an existing contact carrier 7 by means of a FAST method such that this region 31 can serve as a contact element.
  • a finished switching contact 3, 4 is produced in a single-stage process.
  • the contact carrier 7 has a first component of the
  • the contact carrier while a second component of the contact material is introduced into the near-surface region 31 of the contact carrier.
  • it is a Cu contact carrier 7, in whose near-surface region 31 chromium is introduced. This results in this area 31, the desired CuCr contact material.
  • a preformed contact carrier 7 is inserted directly into the die of the SPS system. Subsequently, the necessary for the function of the subsequent contact surface 6 amount of missing material component, in this case Cr powder 32, on the top 33 of the contact carrier ⁇ 7 distributed. This takes place in the form of a loose powder spill.
  • the chromium material 32 can also be provided in the form of a pre-pressed porous semi-finished product 34 (FIG.
  • auxiliary ⁇ disc 36 in the embodiment described here, on the layer of Cr powder 32nd
  • the optionally usable auxiliary slice 36 is comprised of a comparatively hard and preferably electrically conductive material such as metal, ceramic, graphite or the like so as not to adversely affect the power line during the Sintervor ⁇ gangs.
  • an auxiliary disk 36 of coated cemented carbide is used.
  • the auxiliary disk 36 serves, inter alia, as an anti-adhesive and as a coupling element for the power transmission.
  • the auxiliary disc 36 but serves as wear protection, so to avoid a heavy wear of the die, which could be caused by the fact that the relatively hard and sharp chrome powder 32 does not soften at the usual process temperatures in the usual dimensions.
  • the auxiliary disc 36 wears off gradually and is replaced if necessary.
  • the die With the insertion of the upper punch 24, the die is closed upwards.
  • the Cr powder 32 is pressed into the softening material of the contact carrier 7. It arises in a near-surface region 31 of the contact carrier 7, preferably in a 100 ⁇ and about 3 mm thick area below the contact surface 6, a CuCr composite structure of a 3D-crosslinked matrix phase (Cu) and embedded therein, ideally perk faced investigating three-dimensional Cr skeleton.
  • Cu 3D-crosslinked matrix phase
  • the process parameters in particular the process speed and the process temperature, can be selected such that physical processes and / or chemical reactions between the Cr and Cu phases take place, which improve the material properties of the near-surface region 31 of the contact carrier 32 that serves as the contact element. These may be additional alloy, solution and / or re-precipitation operations. If chromium in powder form or in the form of green film is used for the regions taking over the function of a contact element, the subsequent position of the chromium in the material of the contact carrier 7 can not be accurately predicted without much effort.
  • the subsequent location of the inserted ⁇ deposited material is 34
  • the porous semi-finished product 34 is preferably designed in the manner of a sponge with very large pores or as a defined chromium skeleton, see FIG. 7.
  • the fillers which are arranged between the webs are made of chromium Hollow or interspaces with the conductive copper material of the contact carrier 7.
  • the shape of the semifinished product 34 is substantially retained.
  • the majority of the contact carrier / contact element combination 30 is located in a cooler region of the die. For this purpose, if necessary, a corresponding area of the die is actively cooled.
  • the hot process zone is very severely limited in FAST processes, such a cooled contact carrier-contact element combination 30 is neither deformed by the sintering process, nor changed in the microstructure. In other words, despite the high process temperatures, there are no disadvantageous effects, such as, for example, crystallite enlargements.
  • the near-surface region 31 of the contact carrier 7 in another embodiment of the invention to form the near-surface region 31 of the contact carrier 7 in a porous or structured manner.
  • wells, channels or wells may be provided (not Darge ⁇ asserted) on the top side 33 of the contact carrier. 7 This simplifies the introduction of material into the contact carrier 7. At the same time, it also makes possible a homogeneity-promoting additional densification in the course of the FAST process.
  • the distribution of the Cr powder 32 in the carrier material can take place both in the thickness direction 38, here corresponding to the axial movement direction 8 when opening or closing the contact, and in a perpendicular thereto radial direction 39 of the contact carrier 7 with a gradually changing concentration be executed, as explained in more detail below in connection with another embodiment.
  • a second contact element section 42 is formed on an existing first section 41 of the contact element 5 by means of a FAST method.
  • the contact element 5 While in the previously known methods for producing a contact element 5, the contact element 5 consists entirely of sintered powder, now a part of the volume of the powder 19 is replaced by the first contact element portion 41.
  • This first contact element section 41 serves as a volume element in order to replace a specific volume of powder. It has in the embodiment described here the shape of a solid metal element, more precisely the shape of a metal disc. However, it can also be designed ringför ⁇ mig.
  • This volume element 41 in the form of a few millimeters thick disk is conductive. It consists in the example described here of stainless steel or copper.
  • the volume element can be structured according to 41, having at ⁇ game as slots 17th The arrangement of such slots 17 is known to the person skilled in the art and therefore needs no further explanation at this point.
  • the preformed volume element 41 is first placed on the bottom 21 of the die, which usually consists of graphite.
  • the size of the volume element 41 is selected such that the bottom 21 is completely covered.
  • the necessary for the function of the contact element 5 amount of CuCr powder 19 is distributed on the volume element 41, wherein the necessary amount of powder is determined by the height of the contact material layer to be achieved. This is typically between 0.2 mm and 3 mm.
  • the diameter of the volume element 41 is smaller than the die diameter, so that the volume element 41 is coated during the subsequent sintering process not only on the top surface 44, but also on the lateral surface 45 with contact material 19, see FIG 10.
  • Such edge coating ensures that later the Lichtbo ⁇ gen always meets contact material during a shift.
  • the die is closed by default with the upper punch 24 and the FAST process is performed.
  • the Cu and the Cr powder combine to form the solid CuCr contact material.
  • a cohesive connection of the copper powder with the underlying volume element 41 is formed.
  • the contact element 5 thus produced is then connected in a conventional manner to a contact carrier 7, for example by means of a soldering or welding process.
  • the contact element 5 thus produced by means of the FAST method at the same time with the Contact carrier 7 connected.
  • the FAST process simultaneously serves to sinter contact material and to connect the contact element 5 to the contact carrier 7, ie to produce a complete switching element 3, 4 in a single-stage process.
  • the finished molded contact carrier 7 is used instead of the bottom of the die, see FIG 11.
  • the sintering process of the CuCr powder is simultaneously the cohesive joining of the metal disc to the contact carrier.
  • Such a contact element is shown in FIG.
  • the already existing first section of the contact element is usually positioned adjacent to the contact carrier for the FAST method, ie the volume element 41 serves as a support for the overlying powder 19, as shown in FIGS. 9, 10 and 11.
  • the contact carrier has 7 slots 17 for optimizing the arc guide. If penetration of the powder into slots 17 of the contact carrier 7 can not be prevented, the volume element 41 can also be positioned above the powder 19 (not shown). By such an arrangement, the formation of electric fields can be favorably influenced.
  • the hot process zone in FAST methods is very limited and the contact carrier 7 itself is mostly in a cooled die, so that it is neither deformed by the sintering process nor changed in the microstructure.
  • an adapted sintering plant which on the one hand has hybrid heating (not shown) and, on the other hand, permits more accurate or finer, in particular zonal, monitoring and control of the temperatures.
  • the hybrid heating is preferably performed in such a way from ⁇ that in addition to the automatic heating by the current flow during the plasma sintering process, an electrical see heating and thus active temperature control of the die walls 26 is possible.
  • a multi-chamber AST system in which the individual process steps are carried out in separate chambers (not shown). Characterized slow evacuation, preheating and cooling processes can be provided, which to a process improvement, in particular in a higher quality to be produced ty the contact elements lead, without reducing the Pro ⁇ dutechnischsraten.
  • the system is designed such that is sintered in a second chamber, while already prepared in an upstream first chamber, the next component and the first chamber is evacuated.
  • the cooling and ventilation for component removal can take place in a third chamber.
  • the contact material 19 prior to the sintering process is such that the material composition of the contact material 19 and / or at least one property of the contact material 19 changes in at least one body direction 38, 39 of the contact element 5. This is a defined gradual change of the material composition and / or the at least one property of the contact material 19.
  • a graded powder bed is used instead of a homogeneous powder mixture.
  • a gradation in the thickness direction 38 of the subsequent contact element 5 is achieved by filling the metal powder in superimposed layers in the die, wherein in a certain number of intermediate steps, ie from layer to layer, metal powder is used with an increasing chromium content.
  • each layer contains a constant material composition.
  • the later contact surface 6, CuCr having the required composition is used.
  • the individual layers can also have different heights in a further exporting ⁇ approximately example.
  • the heights of the individual layers are at least in the range of the maximum grain size in order to ensure a homogeneous powder mixture within the individual layers.
  • the chromium content is continuously increased or decreased by continuously more or less chromium powder is supplied to the powder mixture in the Be Shel ⁇ development of the die, for example, from a twin-screw mixing system (not shown).
  • the further steps for producing the contact element 5 then correspond to the usual procedure of the various FAST methods, for example spark plasma sintering.
  • a gradation in the thickness direction 38 of the Kunststoffele ⁇ ment 5 is a sole or additional grading in a radial direction 39 of the contact element 5 upstream may also be in part by way of, for example, to influence the arc wander or to enlarge the region in which the arc burns , To achieve such a radial grading is proceeded analogously to the method described above.
  • the layer sequence of Grad mich iststeil may be represented alternatively to a correspondingly modified powder bed by the stacking and lamination of cut to size green sheets 35, for example, see FIG 8.
  • green sheets 35 consisting of the appropriate metal powders, such as CuCr, in an organic Bin ⁇ the matrix are typically produced via a film casting process. Before sintering, the green sheets 35 are thermally or preferably chemically debinded.
  • a structuring of the green sheets is possible, for. B. by introducing holes for better mixing and connection of the components of the individual film layers. Advantages of this process route lie in the prefabrication and possible storage of green and brown, the guarantee of tight mixing tolerances and high homogeneity requirements and in the easy processability of green films 35.
  • green film 35 is also advantageous because with their help especially easy Multi Component material systems can be provided, for example, by green sheets 35 of different composition are combined. Also, in turn, additives, such as tellurium and bismuth, are brought in a defined manner in the contact element 5 ⁇ .
  • green sheets 35 is particularly advantageous when directly (slotted z. B.) on textured contact carriers 7 is sintered, as in contrast to the manufacturing ⁇ route retained over metal powder, these structures, whereas powder can get into the underlying slots and these may completely fill out.
  • Green foils 35 can also be used instead of the metal disks described above as the first volume unit 41 of contact elements 5, the manufacturing method otherwise remaining unchanged.
  • green sheets 35 and powder coating can also be combined with one another.
  • contact elements 5 with gradually changing material compositions or material properties can not only be produced with the aid of powdery starting materials 19 or with green film 35.
  • a porous semifinished product 34 with a defined varying density see FIG. 7.
  • a porous semifinished product be used, in which the distance between the pore channels to each other in a defined manner in the thickness direction 38 and / or changes in the radial direction 39.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Composite Materials (AREA)
  • Powder Metallurgy (AREA)
  • Contacts (AREA)
  • Manufacture Of Switches (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)

Abstract

L'invention concerne un procédé et un dispositif permettant de produire des éléments de contact pour des contacts de commutation électriques. L'invention vise à optimiser la production de contacts de commutation électriques (3, 4), en particulier pour des tubes à vide (1). A cet effet, l'invention propose un procédé selon lequel un champ électrique ou électromagnétique assiste et/ou provoque un processus de frittage. Selon ce procédé, le processus de frittage a lieu sur un support métallique et ainsi, des demi-produits d'élément de contact pour des contacts de commutation électriques (3, 4), des éléments de contact (5) pour des contacts de commutation électriques (3, 4) et/ou des contacts de commutation électriques (3, 4), en particulier pour des tubes à vide (1), sont produits.
EP14730490.1A 2013-06-20 2014-06-04 Procédé et dispositif permettant de produire des éléments de contact pour des contacts de commutation électriques Withdrawn EP2992541A1 (fr)

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DE102013211657 2013-06-20
PCT/EP2014/061596 WO2014202389A1 (fr) 2013-06-20 2014-06-04 Procédé et dispositif permettant de produire des éléments de contact pour des contacts de commutation électriques

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CN106191511B (zh) * 2016-08-05 2018-01-09 陕西斯瑞新材料股份有限公司 铜铬触头材料的制作方法
US20180111191A1 (en) * 2016-10-21 2018-04-26 Hamilton Sundstrand Corporation Method of manufacturing metal articles
EP3391982B1 (fr) * 2017-04-21 2023-08-16 Raytheon Technologies Corporation Systèmes, dispositifs et procédés de frittage par plasma à étincelles
CN107335975B (zh) * 2017-07-19 2019-12-20 浙江义腾特种钢管有限公司 一种管式膜分离系统用不锈钢管生产工艺
DE102018201205A1 (de) * 2018-01-26 2019-08-01 Siemens Aktiengesellschaft Sinteraggregat und Verfahren zum Spark-Plasma-Sintern
EP3702065A1 (fr) * 2019-02-28 2020-09-02 Siemens Aktiengesellschaft Dispositif de frittage pourvu de dispositif de pression de frittage et de dispositif de courant de frittage découplés l'un de l'autre, procédé de fabrication d'une matière de contact électrique à l'aide du dispositif de frittage, matière de contact électrique et utilisation de la matière de contact électrique
EP3702066A1 (fr) * 2019-02-28 2020-09-02 Siemens Aktiengesellschaft Dispositif de frittage à source de charge de cisaillement, procédé de fabrication d'une matière de contact électrique à l'aide du dispositif de frittage, matière de contact électrique et utilisation de la matière de contact électrique
CN109894615A (zh) * 2019-04-19 2019-06-18 扬州海昌新材股份有限公司 脉冲放电闪速烧结金属基零部件近净成形工艺方法
DE102021210839A1 (de) 2021-09-28 2023-03-30 Siemens Aktiengesellschaft Herstellungsverfahren für einen Kontaktkörper einer Vakuumschaltröhre, Kontaktkörper für eine Vakuumschaltröhre und Vakuumschaltröhre mit einem solchen Kontaktkörper

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US20160133402A1 (en) 2016-05-12

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