EP2973570B1 - Auto-déclencheur pour un amplificateur de détection dans un dispositif de mémoire - Google Patents
Auto-déclencheur pour un amplificateur de détection dans un dispositif de mémoire Download PDFInfo
- Publication number
- EP2973570B1 EP2973570B1 EP13878102.6A EP13878102A EP2973570B1 EP 2973570 B1 EP2973570 B1 EP 2973570B1 EP 13878102 A EP13878102 A EP 13878102A EP 2973570 B1 EP2973570 B1 EP 2973570B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- timing generator
- sense amplifier
- output
- flash memory
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/227—Timing of memory operations based on dummy memory elements or replica circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Definitions
- a self-timer for a sense amplifier in a memory device is disclosed.
- Non-volatile semiconductor memory cells using a floating gate to store charges thereon and memory arrays of such non-volatile memory cells formed in a semiconductor substrate are well known in the art.
- floating gate memory cells have been of the split gate type, or stacked gate type.
- Read operations usually are performed on floating gate memory cells using sense amplifiers.
- a sense amplifier for this purpose is disclosed in U.S. Patent No. 5,386,158 (the "'158 Patent").
- the '158 Patent discloses using a reference cell that draws a known amount of current.
- the '158 Patent relies upon a current mirror to mirror the current drawn by the reference cell, and another current mirror to mirror the current drawn by the selected memory cell. The current in each current mirror is then compared, and the value stored in the memory cell (e.g., 0 or 1) can be determined based on which current is greater.
- the '914 Patent discloses a sensing circuit for a multi-level floating gate memory cell or MLC, which can store more than one bit of data. It discloses the use of multiple reference cells that are utilized to determine the value stored in the memory cell (e.g., 00, 01, 10, or 11).
- Sense amplifiers often utilize a reference memory cell that is compared to a selected memory cell to determine the contents of the selected memory cell.
- the selected memory cell is selected in part through the assertion of a corresponding bit line.
- the bit line will include inherent capacitance. This can affect the timing and accuracy of the sense amplifier.
- a timing generator receives a pre-charged bit line and a reference cell that emulates an actual selected memory cell.
- the timing generator generates a signal that can be used to enable the sense data operation.
- a circuit for generating a sense amplifier control signal is provided and defined in claim 1, and a corresponding method of initiating a sense amplifier operation is provided and is defined in claim 6.
- Control circuit 10 receives an ATD signal 90, which is an "Address Transition Detection" signal indicating that an address has been presented for a read operation from a flash memory array (not shown).
- Control circuit 10 comprises pre-charge block 30, which receives Voltage Bias 20, which is a voltage source. Pre-charge block outputs a voltage at node 40.
- Control circuit 10 further comprises reference cell 60, which is a "dummy" memory cell that emulates the memory cells in the flash memory array (not shown) with which the sense amplifier will be used.
- Reference memory cell 60 is coupled to YMUX (Y Multiplexer) 50, which in turn is connected to node 40.
- YMUX 50 is the same type of multiplexer used to read data from the flash memory array.
- Control circuit 10 further comprises timing generator 100 that receives node 40 as an input.
- the output of timing generator 100 is coupled to logic control 70, and the output of logic control 70 is sense amplifier control signal 80.
- Sense amplifier control signal 80 is used to trigger a read operation from the flash memory array.
- sense amplifier control signal 80 instead of ATD signal 90 (as is the case in the prior art) can lead to a more accurate sense operation because the timing of sense amplifier control signal 80 is affected by the reference cell current of reference cell 60 and the capacitance of YMUX 50, which emulate the effect of the selected memory cell and a bit line during a read operation from the memory array.
- sense amplifier control signal 80 encompasses the same timing variations that are inherent in the sensing of data from the memory array and therefore will be better matched to the data sense operation.
- Timing generator 100 comprises pre-charge block 35, capacitor 120, capacitor 130, transistor 160, transistor 170, and inverter 150.
- Timing generator 100 receives input 40 (which corresponds to node 40 in Figure 1 ).
- Timing generator 100 generates output 140, which then can be provided to logic control 70 as in Figure 1 to generate sense amplifier control signal 80.
- inverter 150 When ATD 90 is high, inverter 150 is equalized and node 190 is tied to ground through transistor 160. Input 40 is biased to Voltage Bias 20. After the falling edge of ATD occurs, node 190 is charged high, and the input to inverter 150 is the voltage of node 190 times the ratio of capacitor 120 over capacitor 130 (i.e., C1/C2). Input 40 will be pulled down by the current through reference cell 60, which will further pull down the input to inverter 150 causing output 140 to trigger to a high state. Output 140 will signal the beginning of a sense operation, which logic control 70 will convert into sense amplifier control signal 80.
- FIG 3 depicts another embodiment of a timing generator.
- Timing generator 200 can be used instead of timing generator 100 in the embodiments of Figures 1 and 2 .
- Timing generator 200 comprises an operation amplifier 240.
- the inverting input to operational amplifier 240 is VREF 220, which is a voltage reference.
- the non-inverting input to operational amplifier 240 is input 40.
- Output 230 can be input to logic circuit 70 to generate sense amplifier control signal 80.
- Timing generator 300 can be used instead of timing generator 100 in the embodiments of Figures 1 and 2 .
- Timing generator 300 comprises an inverter 320.
- the input to the inverter 320 is input 40.
- the output of inverter 320 is output 330, which can then be input to logic circuit 70 to generate sense amplifier control signal 80.
- references to the present invention herein are not intended to limit the scope of any claim or claim term, but instead merely make reference to one or more features that may be covered by one or more of the claims. Materials, processes and numerical examples described above are exemplary only, and should not be deemed to limit the claims. It should be noted that, as used herein, the terms “over” and “on” both inclusively include “directly on” (no intermediate materials, elements or space disposed there between) and “indirectly on” (intermediate materials, elements or space disposed there between). Likewise, the term “adjacent” includes “directly adjacent” (no intermediate materials, elements or space disposed there between) and “indirectly adjacent” (intermediate materials, elements or space disposed there between). For example, forming an element "over a substrate” can include forming the element directly on the substrate with no intermediate materials/elements there between, as well as forming the element indirectly on the substrate with one or more intermediate materials/elements there between.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Claims (11)
- Circuit (10) pour générer un signal de commande d'amplificateur de lecture (80) dans un système de mémoire flash, comprenant :une cellule de mémoire flash de référence (60) ;un multiplexeur (50) comprenant une entrée et une sortie, l'entrée du multiplexeur étant couplée à la cellule de mémoire flash de référence ;un bloc de précharge (30) comprenant une entrée et une sortie, l'entrée du bloc de précharge recevant un signal indiquant une opération de lecture à effectuer sur le système de mémoire flash et la sortie du bloc de précharge étant couplée à la sortie du multiplexeur ;un générateur de synchronisation (100) comprenant une entrée et une sortie, l'entrée du générateur de synchronisation étant couplée à la sortie du multiplexeur et du bloc de précharge ; etune commande logique (70) couplée à la sortie du générateur de synchronisation pour générer un signal de commande d'amplificateur de lecture qui commande un amplificateur de lecture pour effectuer l'opération de lecture.
- Circuit selon la revendication 1, dans lequel la cellule de mémoire de référence émule une ou plusieurs cellules de mémoire dans une matrice de mémoire flash.
- Circuit selon la revendication 1, dans lequel le générateur de synchronisation comprend une pluralité de condensateurs (120, 130).
- Circuit selon la revendication 3, dans lequel le générateur de synchronisation comprend un inverseur (150).
- Circuit selon la revendication 4, dans lequel le générateur de synchronisation comprend en outre un transistor (170) en parallèle avec l'inverseur (150).
- Procédé de lancement d'une opération d'amplificateur de lecture dans un système de mémoire flash, comprenant :la réception, par un circuit de précharge (30), d'un signal indiquant qu'une opération de lecture doit être effectuée dans le système de mémoire flash ;la génération d'une tension au niveau d'un noeud (40) couplé à une sortie du circuit de précharge ;le prélèvement d'un courant, par une cellule de mémoire flash de référence (60) à travers un multiplexeur (50), à partir du noeud (40) ;la réception, par un générateur de synchronisation (100), d'un signal provenant du noeud (40) ;la génération, par un circuit de commande logique (70) couplé à une sortie du générateur de synchronisation (100), d'un signal de commande d'amplificateur de lecture (80) pour commander un amplificateur de lecture pour effectuer l'opération de lecture.
- Procédé selon la revendication 6, dans lequel la cellule de mémoire de référence émule une ou plusieurs cellules de mémoire dans une matrice de mémoire flash.
- Procédé selon la revendication 6, dans lequel le générateur de synchronisation comprend une pluralité de condensateurs (120, 130).
- Procédé selon la revendication 8, dans lequel le générateur de synchronisation comprend un inverseur (150).
- Procédé selon la revendication 9, dans lequel le générateur de synchronisation comprend un transistor (170) en parallèle avec l'inverseur (150).
- Procédé selon la revendication 10, comprenant en outre l'étape d'égalisation, par le transistor (170), de l'inverseur (150) avant l'étape de génération.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2013/072666 WO2014139138A1 (fr) | 2013-03-15 | 2013-03-15 | Auto-déclencheur pour un amplificateur de détection dans un dispositif de mémoire |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2973570A1 EP2973570A1 (fr) | 2016-01-20 |
EP2973570A4 EP2973570A4 (fr) | 2017-01-04 |
EP2973570B1 true EP2973570B1 (fr) | 2018-05-16 |
Family
ID=51535821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13878102.6A Active EP2973570B1 (fr) | 2013-03-15 | 2013-03-15 | Auto-déclencheur pour un amplificateur de détection dans un dispositif de mémoire |
Country Status (6)
Country | Link |
---|---|
US (1) | US9620235B2 (fr) |
EP (1) | EP2973570B1 (fr) |
JP (1) | JP6101369B2 (fr) |
KR (1) | KR101748063B1 (fr) |
CN (1) | CN105378842B (fr) |
WO (1) | WO2014139138A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018035098A1 (fr) * | 2016-08-15 | 2018-02-22 | Quarry Trail, LLC | Raquette à neige |
US10199112B1 (en) * | 2017-08-25 | 2019-02-05 | Silicon Storage Technology, Inc. | Sense amplifier circuit for reading data in a flash memory cell |
CN108492840B (zh) * | 2018-03-12 | 2020-11-13 | 武汉新芯集成电路制造有限公司 | 灵敏放大器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198997A (en) | 1989-08-11 | 1993-03-30 | Sony Corporation | Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier |
JPH0371495A (ja) * | 1989-08-11 | 1991-03-27 | Sony Corp | 紫外線消去型不揮発性メモリ装置 |
WO1993018412A1 (fr) | 1992-03-13 | 1993-09-16 | Silicon Storage Technology, Inc. | Circuit de detection pour une memoire a grille flottante |
US5910914A (en) | 1997-11-07 | 1999-06-08 | Silicon Storage Technology, Inc. | Sensing circuit for a floating gate memory device having multiple levels of storage in a cell |
US6128226A (en) * | 1999-02-04 | 2000-10-03 | Saifun Semiconductors Ltd. | Method and apparatus for operating with a close to ground signal |
JP4455433B2 (ja) * | 2000-04-11 | 2010-04-21 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
JP3957469B2 (ja) * | 2000-04-11 | 2007-08-15 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
US6490204B2 (en) * | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
US6535434B2 (en) * | 2001-04-05 | 2003-03-18 | Saifun Semiconductors Ltd. | Architecture and scheme for a non-strobed read sequence |
JP4598420B2 (ja) * | 2004-03-18 | 2010-12-15 | 富士通セミコンダクター株式会社 | 半導体記憶装置、及びタイミング制御方法 |
JP4472449B2 (ja) * | 2004-07-12 | 2010-06-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置および半導体記憶装置の制御方法 |
EP2073212B1 (fr) * | 2007-12-21 | 2011-05-11 | EM Microelectronic-Marin SA | Dispositif de lecture d'une mémoire non volatile à basse consommation, et son procédé de mise en action |
US20110286271A1 (en) * | 2010-05-21 | 2011-11-24 | Mediatek Inc. | Memory systems and methods for reading data stored in a memory cell of a memory device |
JP2012160218A (ja) * | 2011-01-28 | 2012-08-23 | Toshiba Corp | 半導体記憶装置 |
-
2013
- 2013-03-15 KR KR1020157027596A patent/KR101748063B1/ko active IP Right Grant
- 2013-03-15 WO PCT/CN2013/072666 patent/WO2014139138A1/fr active Application Filing
- 2013-03-15 JP JP2015561888A patent/JP6101369B2/ja active Active
- 2013-03-15 CN CN201380075447.9A patent/CN105378842B/zh active Active
- 2013-03-15 EP EP13878102.6A patent/EP2973570B1/fr active Active
- 2013-03-15 US US14/772,047 patent/US9620235B2/en active Active
Non-Patent Citations (1)
Title |
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Also Published As
Publication number | Publication date |
---|---|
KR20150126396A (ko) | 2015-11-11 |
JP2016513853A (ja) | 2016-05-16 |
US20160019972A1 (en) | 2016-01-21 |
EP2973570A4 (fr) | 2017-01-04 |
CN105378842B (zh) | 2019-01-29 |
WO2014139138A1 (fr) | 2014-09-18 |
JP6101369B2 (ja) | 2017-03-22 |
EP2973570A1 (fr) | 2016-01-20 |
KR101748063B1 (ko) | 2017-06-15 |
CN105378842A (zh) | 2016-03-02 |
US9620235B2 (en) | 2017-04-11 |
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