EP2850651A4 - AQUEOUS CLEANING SOLUTION HAVING LOW COPPER ATTACK SPEED FOR MORE EFFICIENT REMOVAL OF ORGANIC RESIDUES - Google Patents

AQUEOUS CLEANING SOLUTION HAVING LOW COPPER ATTACK SPEED FOR MORE EFFICIENT REMOVAL OF ORGANIC RESIDUES

Info

Publication number
EP2850651A4
EP2850651A4 EP13791242.4A EP13791242A EP2850651A4 EP 2850651 A4 EP2850651 A4 EP 2850651A4 EP 13791242 A EP13791242 A EP 13791242A EP 2850651 A4 EP2850651 A4 EP 2850651A4
Authority
EP
European Patent Office
Prior art keywords
etch rate
organic residue
residue removal
clean solution
low copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13791242.4A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2850651A2 (en
Inventor
Shrane Ning Jenq
Karl E Boggs
Jun Liu
Nicole Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATMI Taiwan Co Ltd
Entegris Inc
Original Assignee
ATMI Taiwan Co Ltd
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATMI Taiwan Co Ltd, Entegris Inc filed Critical ATMI Taiwan Co Ltd
Publication of EP2850651A2 publication Critical patent/EP2850651A2/en
Publication of EP2850651A4 publication Critical patent/EP2850651A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/267—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP13791242.4A 2012-05-18 2013-05-17 AQUEOUS CLEANING SOLUTION HAVING LOW COPPER ATTACK SPEED FOR MORE EFFICIENT REMOVAL OF ORGANIC RESIDUES Withdrawn EP2850651A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261648937P 2012-05-18 2012-05-18
US201261695548P 2012-08-31 2012-08-31
PCT/US2013/041634 WO2013173743A2 (en) 2012-05-18 2013-05-17 Aqueous clean solution with low copper etch rate for organic residue removal improvement

Publications (2)

Publication Number Publication Date
EP2850651A2 EP2850651A2 (en) 2015-03-25
EP2850651A4 true EP2850651A4 (en) 2016-03-09

Family

ID=49584473

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13791242.4A Withdrawn EP2850651A4 (en) 2012-05-18 2013-05-17 AQUEOUS CLEANING SOLUTION HAVING LOW COPPER ATTACK SPEED FOR MORE EFFICIENT REMOVAL OF ORGANIC RESIDUES

Country Status (8)

Country Link
US (1) US20150114429A1 (ja)
EP (1) EP2850651A4 (ja)
JP (1) JP2015524165A (ja)
KR (1) KR20150013830A (ja)
CN (1) CN104395989A (ja)
SG (1) SG11201407657YA (ja)
TW (1) TW201404877A (ja)
WO (1) WO2013173743A2 (ja)

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WO2013142250A1 (en) * 2012-03-18 2013-09-26 Advanced Technology Materials, Inc. Post-cmp formulation having improved barrier layer compatibility and cleaning performance
KR102193925B1 (ko) 2012-09-25 2020-12-22 엔테그리스, 아이엔씨. 코발트계 박막의 저온 ａｌｄ 또는 ｃｖｄ를 위한 코발트 전구체
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
SG10201708364XA (en) 2013-06-06 2017-11-29 Entegris Inc Compositions and methods for selectively etching titanium nitride
CN112442374A (zh) 2013-07-31 2021-03-05 恩特格里斯公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
US10340150B2 (en) 2013-12-16 2019-07-02 Entegris, Inc. Ni:NiGe:Ge selective etch formulations and method of using same
SG10201805234YA (en) 2013-12-20 2018-08-30 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) * 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
TWI739285B (zh) 2014-02-04 2021-09-11 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
JP2015203047A (ja) * 2014-04-11 2015-11-16 三菱化学株式会社 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
CN104233358B (zh) * 2014-09-10 2016-12-07 句容金猴机械研究所有限公司 一种机械设备除锈剂及其制备方法
US11476158B2 (en) 2014-09-14 2022-10-18 Entegris, Inc. Cobalt deposition selectivity on copper and dielectrics
CN107208007A (zh) * 2015-01-05 2017-09-26 恩特格里斯公司 化学机械抛光后调配物及其使用方法
EP3245668B1 (en) * 2015-01-13 2021-06-30 CMC Materials, Inc. Cleaning composition and method for cleaning semiconductor wafers after cmp
US9490145B2 (en) * 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US9976111B2 (en) * 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
KR102644385B1 (ko) * 2015-12-22 2024-03-08 주식회사 케이씨텍 폴리실리콘막 연마용 슬러리 조성물
CN109075035B (zh) * 2016-04-28 2023-06-13 富士胶片株式会社 处理液及处理液收容体
JP6808730B2 (ja) * 2016-06-03 2021-01-06 富士フイルム株式会社 処理液、基板洗浄方法およびレジストの除去方法
KR20180069185A (ko) * 2016-12-14 2018-06-25 삼성전자주식회사 기판 가공 방법 및 접착층 세정 조성물
JP6966570B2 (ja) * 2017-04-11 2021-11-17 インテグリス・インコーポレーテッド 化学機械研磨後配合物及び使用方法
CN107419326B (zh) * 2017-04-12 2018-12-07 广州市双石金属制品有限公司 一种真空离子镀电化学退镀液配方
CN107460532B (zh) * 2017-04-12 2018-12-07 广州市双石金属制品有限公司 一种真空离子镀电化学退镀液配方
IL274877B2 (en) * 2017-12-08 2024-03-01 Basf Se A cleaning agent for removing residues after burning or after ash from a semiconductor substrate and a corresponding manufacturing process
CN110713868A (zh) * 2018-07-13 2020-01-21 巴斯夫欧洲公司 可移除氮化钛的蚀刻后残渣清理溶液
US11149235B2 (en) 2018-07-20 2021-10-19 Entegris, Inc. Cleaning composition with corrosion inhibitor
JP7220040B2 (ja) 2018-09-20 2023-02-09 関東化学株式会社 洗浄液組成物
US11124746B2 (en) * 2018-11-08 2021-09-21 Entegris, Inc. Post CMP cleaning composition
CN110499511B (zh) * 2019-09-03 2021-08-31 中国石油天然气股份有限公司 一种超临界二氧化碳下碳钢缓蚀剂及其制备方法
CN110592568A (zh) * 2019-09-16 2019-12-20 铜陵市华创新材料有限公司 环保负极集流体防氧化液及其制备和使用方法
US11492709B2 (en) * 2020-04-14 2022-11-08 Entegris, Inc. Method and composition for etching molybdenum
CN113921383B (zh) 2021-09-14 2022-06-03 浙江奥首材料科技有限公司 一种铜表面钝化组合物、其用途及包含其的光刻胶剥离液
US20230399754A1 (en) * 2022-06-08 2023-12-14 Entegris, Inc. Cleaning composition with molybdenum etching inhibitor
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法

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US20040224866A1 (en) * 2003-02-19 2004-11-11 Hiroshi Matsunaga Cleaning solution and cleaning process using the solution
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008144501A2 (en) * 2007-05-17 2008-11-27 Advanced Technology Materials Inc. New antioxidants for post-cmp cleaning formulations
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US7919446B1 (en) * 2007-12-28 2011-04-05 Intermolecular, Inc. Post-CMP cleaning compositions and methods of using same
WO2011094568A2 (en) * 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
WO2013142250A1 (en) * 2012-03-18 2013-09-26 Advanced Technology Materials, Inc. Post-cmp formulation having improved barrier layer compatibility and cleaning performance

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WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
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US8754021B2 (en) * 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8673783B2 (en) * 2010-07-02 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Metal conductor chemical mechanical polish

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Publication number Priority date Publication date Assignee Title
US20010004633A1 (en) * 1999-11-16 2001-06-21 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US20040224866A1 (en) * 2003-02-19 2004-11-11 Hiroshi Matsunaga Cleaning solution and cleaning process using the solution
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008144501A2 (en) * 2007-05-17 2008-11-27 Advanced Technology Materials Inc. New antioxidants for post-cmp cleaning formulations
US7919446B1 (en) * 2007-12-28 2011-04-05 Intermolecular, Inc. Post-CMP cleaning compositions and methods of using same
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
WO2011094568A2 (en) * 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
WO2013142250A1 (en) * 2012-03-18 2013-09-26 Advanced Technology Materials, Inc. Post-cmp formulation having improved barrier layer compatibility and cleaning performance

Also Published As

Publication number Publication date
WO2013173743A3 (en) 2014-02-20
EP2850651A2 (en) 2015-03-25
TW201404877A (zh) 2014-02-01
KR20150013830A (ko) 2015-02-05
CN104395989A (zh) 2015-03-04
WO2013173743A2 (en) 2013-11-21
US20150114429A1 (en) 2015-04-30
SG11201407657YA (en) 2014-12-30
JP2015524165A (ja) 2015-08-20

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