EP2831916A4 - Pile de sonos avec couche de mémoire au nitrure fendue - Google Patents

Pile de sonos avec couche de mémoire au nitrure fendue

Info

Publication number
EP2831916A4
EP2831916A4 EP13767277.0A EP13767277A EP2831916A4 EP 2831916 A4 EP2831916 A4 EP 2831916A4 EP 13767277 A EP13767277 A EP 13767277A EP 2831916 A4 EP2831916 A4 EP 2831916A4
Authority
EP
European Patent Office
Prior art keywords
memory layer
nitride memory
sonos stack
split
split nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP13767277.0A
Other languages
German (de)
English (en)
Other versions
EP2831916A1 (fr
Inventor
Fredrick Jenne
Krishnaswamy Ramkumar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cypress Semiconductor Corp
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/431,069 external-priority patent/US8710578B2/en
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Priority to EP18213110.2A priority Critical patent/EP3534408A1/fr
Publication of EP2831916A1 publication Critical patent/EP2831916A1/fr
Publication of EP2831916A4 publication Critical patent/EP2831916A4/fr
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
EP13767277.0A 2012-03-27 2013-03-08 Pile de sonos avec couche de mémoire au nitrure fendue Ceased EP2831916A4 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP18213110.2A EP3534408A1 (fr) 2012-03-27 2013-03-08 Piles sonos à couche de mémoire de nitrure divisée

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/431,069 US8710578B2 (en) 2009-04-24 2012-03-27 SONOS stack with split nitride memory layer
PCT/US2013/029784 WO2013148112A1 (fr) 2012-03-27 2013-03-08 Pile de sonos avec couche de mémoire au nitrure fendue

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP18213110.2A Division EP3534408A1 (fr) 2012-03-27 2013-03-08 Piles sonos à couche de mémoire de nitrure divisée

Publications (2)

Publication Number Publication Date
EP2831916A1 EP2831916A1 (fr) 2015-02-04
EP2831916A4 true EP2831916A4 (fr) 2015-10-28

Family

ID=49260998

Family Applications (2)

Application Number Title Priority Date Filing Date
EP18213110.2A Pending EP3534408A1 (fr) 2012-03-27 2013-03-08 Piles sonos à couche de mémoire de nitrure divisée
EP13767277.0A Ceased EP2831916A4 (fr) 2012-03-27 2013-03-08 Pile de sonos avec couche de mémoire au nitrure fendue

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP18213110.2A Pending EP3534408A1 (fr) 2012-03-27 2013-03-08 Piles sonos à couche de mémoire de nitrure divisée

Country Status (6)

Country Link
EP (2) EP3534408A1 (fr)
JP (1) JP6422430B2 (fr)
KR (2) KR102061253B1 (fr)
CN (1) CN104254921B (fr)
TW (2) TWI581432B (fr)
WO (1) WO2013148112A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090179253A1 (en) 2007-05-25 2009-07-16 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US9449831B2 (en) 2007-05-25 2016-09-20 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8940645B2 (en) 2007-05-25 2015-01-27 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
US8633537B2 (en) 2007-05-25 2014-01-21 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US9299568B2 (en) 2007-05-25 2016-03-29 Cypress Semiconductor Corporation SONOS ONO stack scaling
US9431549B2 (en) 2007-12-12 2016-08-30 Cypress Semiconductor Corporation Nonvolatile charge trap memory device having a high dielectric constant blocking region
KR102220842B1 (ko) * 2012-03-31 2021-03-02 롱지튜드 플래쉬 메모리 솔루션즈 리미티드 복수의 산질화물 층들을 구비한 산화물-질화물-산화물 스택
TWI709174B (zh) * 2012-07-01 2020-11-01 愛爾蘭商經度閃存解決方案有限公司 用於製造非揮發性電荷捕獲記憶體元件之基氧化方法
TWI604595B (zh) * 2012-07-01 2017-11-01 賽普拉斯半導體公司 非揮發性電荷捕獲記憶體元件以及其製造方法
US8883624B1 (en) 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
JP2016018805A (ja) * 2014-07-04 2016-02-01 マクロニクス インターナショナル カンパニー リミテッド 電荷を蓄積する複数の電荷トラップ層を備えたバンドギャップエンジニアドメモリ
CN104617100A (zh) * 2015-01-30 2015-05-13 武汉新芯集成电路制造有限公司 Sonos存储器结构及其制作方法
CN107924952A (zh) * 2015-04-24 2018-04-17 Neo半导体公司 双功能混合存储单元
US20190103414A1 (en) * 2017-10-04 2019-04-04 Cypress Semiconductor Corporation Embedded sonos with a high-k metal gate and manufacturing methods of the same
TWI812974B (zh) * 2020-09-04 2023-08-21 日商鎧俠股份有限公司 半導體記憶裝置
JP2022043897A (ja) 2020-09-04 2022-03-16 キオクシア株式会社 半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080067577A1 (en) * 2006-09-15 2008-03-20 Ming-Tsong Wang Multi-trapping layer flash memory cell
US20110248332A1 (en) * 2007-05-25 2011-10-13 Sagy Levy Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
US8222688B1 (en) * 2009-04-24 2012-07-17 Cypress Semiconductor Corporation SONOS stack with split nitride memory layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4489359B2 (ja) * 2003-01-31 2010-06-23 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7473589B2 (en) * 2005-12-09 2009-01-06 Macronix International Co., Ltd. Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
JP4791949B2 (ja) * 2006-12-22 2011-10-12 株式会社東芝 不揮発性半導体メモリ
KR20100014557A (ko) * 2007-03-26 2010-02-10 도쿄엘렉트론가부시키가이샤 질화 규소막의 형성 방법, 비휘발성 반도체 메모리 장치의 제조 방법, 비휘발성 반도체 메모리 장치 및 플라즈마 처리 장치
US8283261B2 (en) * 2007-05-25 2012-10-09 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
JP2009027134A (ja) * 2007-06-21 2009-02-05 Tokyo Electron Ltd Ｍｏｓ型半導体メモリ装置
US7737488B2 (en) * 2007-08-09 2010-06-15 Macronix International Co., Ltd. Blocking dielectric engineered charge trapping memory cell with high speed erase
TWI374448B (en) * 2007-08-13 2012-10-11 Macronix Int Co Ltd Charge trapping memory cell with high speed erase
US7816727B2 (en) * 2007-08-27 2010-10-19 Macronix International Co., Ltd. High-κ capped blocking dielectric bandgap engineered SONOS and MONOS
TW200913162A (en) * 2007-09-11 2009-03-16 Univ Nat Chiao Tung Nonvolatile memory device with nanowire channel and a method for fabricating the same
JP2011124240A (ja) * 2008-03-31 2011-06-23 Tokyo Electron Ltd Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体
JP2010016228A (ja) * 2008-07-04 2010-01-21 Toshiba Corp 不揮発性半導体記憶装置及びその形成方法
JP5531259B2 (ja) * 2009-03-19 2014-06-25 株式会社東芝 半導体装置及びその製造方法
US8071453B1 (en) * 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow
KR102220842B1 (ko) * 2012-03-31 2021-03-02 롱지튜드 플래쉬 메모리 솔루션즈 리미티드 복수의 산질화물 층들을 구비한 산화물-질화물-산화물 스택
TW201830705A (zh) * 2012-07-01 2018-08-16 美商賽普拉斯半導體公司 在多層電荷捕獲區域具有氘化層之非揮發性電荷捕獲記憶體元件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080067577A1 (en) * 2006-09-15 2008-03-20 Ming-Tsong Wang Multi-trapping layer flash memory cell
US20110248332A1 (en) * 2007-05-25 2011-10-13 Sagy Levy Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
US8222688B1 (en) * 2009-04-24 2012-07-17 Cypress Semiconductor Corporation SONOS stack with split nitride memory layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2013148112A1 *

Also Published As

Publication number Publication date
JP6422430B2 (ja) 2018-11-14
TWI581432B (zh) 2017-05-01
WO2013148112A1 (fr) 2013-10-03
JP2015517211A (ja) 2015-06-18
KR20200003425A (ko) 2020-01-09
CN104254921A (zh) 2014-12-31
CN104254921B (zh) 2020-06-12
KR20140147083A (ko) 2014-12-29
EP3534408A1 (fr) 2019-09-04
KR102352542B1 (ko) 2022-01-18
EP2831916A1 (fr) 2015-02-04
TWI615982B (zh) 2018-02-21
KR102061253B1 (ko) 2019-12-31
TW201724527A (zh) 2017-07-01
TW201349505A (zh) 2013-12-01

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