EP2823084B1 - Verfahren zur förderung der haftung zwischen dielektrischen substraten und metallschichten - Google Patents

Verfahren zur förderung der haftung zwischen dielektrischen substraten und metallschichten Download PDF

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EP2823084B1
EP2823084B1 EP13710864.3A EP13710864A EP2823084B1 EP 2823084 B1 EP2823084 B1 EP 2823084B1 EP 13710864 A EP13710864 A EP 13710864A EP 2823084 B1 EP2823084 B1 EP 2823084B1
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solution
substrate
metal
layer
dielectric
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EP2823084A1 (de
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Dirk Tews
Fabian Michalik
Belen Gil Ibànez
Lutz Brandt
Meng Che Hsieh
Liu Zhiming
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Atotech Deutschland GmbH and Co KG
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Atotech Deutschland GmbH and Co KG
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    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
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    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
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    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
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    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/31—Coating with metals
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Claims (15)

  1. Verfahren zum Behandeln einer Oberfläche eines dielektrischen Substrats zur Vorbereitung der Oberfläche für die anschließende nasschemische Metallabscheidung, wobei das Verfahren folgende Schritte in der angegebenen Reihenfolge umfasst:
    (i) Behandeln der Oberfläche mit einer mindestens eine Organosilanverbindung umfassenden Lösung;
    (ii) Behandeln der Oberfläche mit einer ein aus wässrigen sauren oder alkalischen Lösungen eines Permanganatsalzes ausgewähltes Oxidationsmittel umfassenden Lösung.
  2. Verfahren nach Anspruch 1, bei dem die Permanganatsalz-Konzentration im Bereich von 20-100 g/l liegt.
  3. Verfahren nach Anspruch 1, bei dem die Organosilanverbindung aus der Gruppe, die durch die Formel

            A(4-x)SiBx

    wiedergegeben wird, ausgewählt wird, wobei A jeweils unabhängig für eine hydrolysierbare Gruppe steht,
    x für 1 bis 3 steht und
    B jeweils unabhängig aus der Gruppe bestehend aus C1-C20-Alkyl, Aryl, Aminoaryl und einer funktionellen Gruppe der Formel

            CnH2nX

    ausgewählt ist, wobei
    n für 0 bis 15, vorzugsweise 0 bis 10, noch weiter bevorzugt 1 bis 8 und ganz besonders bevorzugt 1, 2, 3 oder 4 steht und
    X aus der Gruppe bestehend aus Amino-, Amido-, Hydroxy-, Alkoxy-, Halogen-, Mercapto-, Carboxy-, Carboxyester-, Carboxamid-, Thiocarboxamid-, Acyl-, Vinyl-, Allyl-, Styryl-, Epoxy-, Epoxycyclohexyl-, Glycidoxy-, Isocyanato-, Thiocyanato-, Thioisocyanato-, Ureido-, Thioureido-, Guanidino-, Thioglycidoxy-, Acryloxy- und Methacryloxygruppen ausgewählt ist oder X für einen Rest eines Carboxyesters steht oder X für Si(OR)3 steht und wobei R für eine C1-C5-Alkylgruppe steht.
  4. Verfahren nach Anspruch 3, bei dem die hydrolysierbare Gruppe A aus der Gruppe bestehend aus -OH und -OR1 ausgewählt ist und wobei R1 für C1-C5-Alkyl oder -(CH2)yOR2 steht und wobei y für 1, 2 oder 3 steht und R2 für H, C1-C5-Alkyl oder -OCOR3 steht und wobei R3 für H oder C1-C5-Alkyl steht.
  5. Verfahren nach Anspruch 4, bei dem R1, R2 und R3 unabhängig aus Methyl, Ethyl, Propyl und Isopropyl ausgewählt sind.
  6. Verfahren nach einem der vorhergehenden Ansprüche, bei dem die Organosilanverbindung aus der Gruppe bestehend aus Vinylsilanen, Aminoalkylsilanen, Ureidoalkylsilanen, Methacryloxysilanen und Epoxyalkylsilanen ausgewählt wird.
  7. Verfahren nach einem der vorhergehenden Ansprüche, bei dem das Organosilan in einer Konzentration zwischen 0,5 Gew.-% und 20 Gew.-% angewendet wird.
  8. Verfahren nach einem der vorhergehenden Ansprüche, bei dem das Organosilan in einem polaren organischen Lösungsmittel mit einem Siedepunkt im Bereich von 60 bis 250°C gelöst wird.
  9. Verfahren nach einem der vorhergehenden Ansprüche, bei dem das Organosilan in einem aus Diethylenglykol, 2-Isopropoxyethanol (IPPE), Di(propylenglykol)methyletheracetat (DPGMEA) und 2-Ethyl-1-hexanol ausgewählten polaren organischen Lösungsmittel gelöst wird.
  10. Verfahren nach einem der vorhergehenden Ansprüche, bei dem es sich bei dem Oxidationsmittel gemäß Schritt 1 ii) um eine alkalische wässrige Lösung von Permanganationen handelt.
  11. Verfahren nach einem der vorhergehenden Ansprüche, umfassend:
    (i) Behandeln der Oberfläche mit einer mindestens eine Organosilanverbindung umfassenden Lösung über einen Zeitraum zwischen 10 s und 10 min bei einer Temperatur zwischen 15 und 50°C;
    (ii) Behandeln der Oberfläche mit einer ein aus einer alkalischen wässrigen Lösung von Permanganationen in einer Konzentration von 20 - 100 g/l ausgewähltes Oxidationsmittel umfassenden Lösung über einen Zeitraum zwischen 1 und 30 min bei einer Temperatur zwischen 20 und 95°C zum Erhalt einer aufgerauten Oberfläche mit einer durchschnittlichen Oberflächenrauheit Ra von weniger als 150 nm.
  12. Verfahren nach einem der vorhergehenden Ansprüche, ferner umfassend:
    (iii) Metallisieren des Substrats nach Schritt (ii) durch ein nasschemisches Metallabscheidungsverfahren.
  13. Verfahren nach Anspruch 12, bei dem es sich bei der Metallisierung um eine Kupfermetallisierung handelt.
  14. Verfahren nach Anspruch 12 und 13, bei dem (iii) das Metallisieren des Substrats nach Schritt
    (ii) durch ein nasschemisches Metallabscheidungsverfahren die folgenden Schritte zum Leitfähigmachen der Oberfläche umfasst:
    (iiia) Kontaktieren des Substrats mit einer Aktivatorlösung, die kolloidales oder ionisches katalysierendes Metall, wie ein Edelmetall,
    vorzugsweise Palladium, enthält, wodurch die Substratoberfläche katalytisch wird,
    und gegebenenfalls, insbesondere dann, wenn der Aktivator ionisches katalysierendes Metall enthält,
    (iiib) Kontaktieren des Substrats mit einem Reduktionsmittel, wobei die Metallionen eines ionischen Aktivators zu elementarem Metall reduziert werden,
    oder dann, wenn der Aktivator kolloidales katalysierendes Metall enthält,
    (iiic) Kontaktieren des Substrats mit einem Beschleuniger, wobei die Komponenten des Kolloids, beispielsweise ein Schutzkolloid, von dem katalysierenden Metall entfernt werden.
  15. Verfahren nach einem der Ansprüche 1 bis 12, bei dem es sich bei dem dielektrischen Substrat um ein Substrat handelt, das eine blanke dielektrische Aufbauschicht (1), die auf mindestens einem Teil der Rückseite einen Kupferbereich (2) aufweist, und eine auf der Rückseite der Aufbauschicht (1) angebrachte zweite dielektrische Schicht (3) mit mindestens einer Öffnung (4) in der Aufbauschicht (1), die sich durch das Substrat bis zum Kontaktbereich (2) erstreckt, umfasst, umfassend:
    (i) Behandeln der Oberfläche mit einer mindestens eine Organosilanverbindung umfassenden Lösung gemäß einem der vorhergehenden Ansprüche,
    (ii) Behandeln der Oberfläche mit einer ein Oxidationsmittel enthaltenden Lösung gemäß einem der obigen Ansprüche,
    (iii) Abscheiden einer leitfähigen Keimschicht (6) auf der oberen Oberfläche (5a) der dielektrischen Aufbauschicht (1) und den dielektrischen Seitenwänden (5b) der mindestens einen Öffnung (4) und
    (iv) selektives Abscheiden einer Kupferschicht (8) in Öffnungen einer strukturierten Resistschicht (7) durch Galvanisierung.
EP13710864.3A 2012-03-29 2013-03-21 Verfahren zur förderung der haftung zwischen dielektrischen substraten und metallschichten Active EP2823084B1 (de)

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US20150050422A1 (en) 2015-02-19
KR20140143764A (ko) 2014-12-17
TWI569704B (zh) 2017-02-01
WO2013143961A1 (en) 2013-10-03
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KR101927679B1 (ko) 2018-12-11
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