EP2765611A3 - Vertikale Galliumnitridtransistoren und Verfahren zu deren Herstellung - Google Patents

Vertikale Galliumnitridtransistoren und Verfahren zu deren Herstellung Download PDF

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Publication number
EP2765611A3
EP2765611A3 EP14152839.8A EP14152839A EP2765611A3 EP 2765611 A3 EP2765611 A3 EP 2765611A3 EP 14152839 A EP14152839 A EP 14152839A EP 2765611 A3 EP2765611 A3 EP 2765611A3
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EP
European Patent Office
Prior art keywords
semiconductor layer
gallium nitride
fabricating
methods
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14152839.8A
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English (en)
French (fr)
Other versions
EP2765611A2 (de
Inventor
Takeya Motonobu
Kwan Hyun Lee
Young Do Jong
June Sik Kwak
Kang Nyung Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130014873A external-priority patent/KR20140101563A/ko
Priority claimed from KR1020130070692A external-priority patent/KR20140147435A/ko
Priority claimed from KR1020130081623A external-priority patent/KR20150007547A/ko
Priority claimed from KR1020130087317A external-priority patent/KR20150012020A/ko
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Publication of EP2765611A2 publication Critical patent/EP2765611A2/de
Publication of EP2765611A3 publication Critical patent/EP2765611A3/de
Withdrawn legal-status Critical Current

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    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
EP14152839.8A 2013-02-12 2014-01-28 Vertikale Galliumnitridtransistoren und Verfahren zu deren Herstellung Withdrawn EP2765611A3 (de)

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KR1020130014873A KR20140101563A (ko) 2013-02-12 2013-02-12 Ⅲ-ⅴ계 트랜지스터 및 그것을 제조하는 방법
KR1020130070692A KR20140147435A (ko) 2013-06-20 2013-06-20 질화물계 전계효과 트랜지스터 및 그 제조방법
KR1020130081623A KR20150007547A (ko) 2013-07-11 2013-07-11 수직형 갈륨나이트라이드 트랜지스터의 제조방법
KR1020130087317A KR20150012020A (ko) 2013-07-24 2013-07-24 수직형 갈륨나이트라이드 트랜지스터 및 그 제조방법

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US9570438B1 (en) * 2015-08-04 2017-02-14 Infineon Technologies Austria Ag Avalanche-rugged quasi-vertical HEMT
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode
JP6544252B2 (ja) * 2016-01-26 2019-07-17 豊田合成株式会社 半導体装置、電力変換装置及び半導体装置の製造方法
US10002956B1 (en) * 2017-08-31 2018-06-19 Vanguard International Semiconductor Corporation High electron mobility transistor
JP6431631B1 (ja) * 2018-02-28 2018-11-28 株式会社フィルネックス 半導体素子の製造方法
CN110634938A (zh) * 2018-06-22 2019-12-31 中国科学院苏州纳米技术与纳米仿生研究所 氧化镓垂直结构半导体电子器件及其制作方法
US10516043B1 (en) * 2018-07-19 2019-12-24 Cree, Inc. Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors
JP7188971B2 (ja) * 2018-10-12 2022-12-13 株式会社デンソー 半導体装置とその製造方法
US10950750B2 (en) * 2019-03-06 2021-03-16 Bolb Inc. Heterostructure and light-emitting device employing the same
CN113707775B (zh) * 2019-03-06 2022-06-03 博尔博公司 异质结构以及采用异质结构的发光器件
CN117317001A (zh) * 2019-04-12 2023-12-29 广东致能科技有限公司 一种半导体器件及其制造方法
CN112447837A (zh) * 2019-08-30 2021-03-05 广东致能科技有限公司 一种高耐压的高电子迁移率晶体管
US11038048B2 (en) * 2019-10-01 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Gallium nitride-on-silicon devices
KR20210061198A (ko) 2019-11-19 2021-05-27 삼성전자주식회사 반도체 구조체, 이를 포함하는 트랜지스터 및 트랜지스터의 제조방법
CN111063739A (zh) * 2019-12-10 2020-04-24 西安电子科技大学 基于SiO2电流阻挡层的氮化铝CAVET器件及制作方法
KR20220165741A (ko) 2020-04-13 2022-12-15 광동 즈넝 테크놀로지 컴퍼니 리미티드 핀형 반도체 소자, 제조 방법 및 그 응용
US20220384633A1 (en) * 2020-04-13 2022-12-01 Guangdong Zhineng Technology Co., Ltd. Hole Channel Semiconductor Transistor, Manufacturing Method, and Application thereof
CN111863958B (zh) * 2020-06-09 2024-03-19 江苏大学 一种常开型高电子迁移率晶体管结构及其制造方法
CN113838929A (zh) * 2020-06-23 2021-12-24 广东致能科技有限公司 一种半导体器件及其制造方法
RU2761051C1 (ru) * 2021-06-08 2021-12-02 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Способ изготовления межприборной изоляции мощных нитридгаллиевых транзисторов

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EP2518771A1 (de) * 2009-12-21 2012-10-31 Fujitsu Limited Verbundhalbleiterbauelement und herstellungsverfahren dafür

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