EP2737497A1 - Procédé de fabrication d'un composant électrique, ainsi que composant électrique - Google Patents

Procédé de fabrication d'un composant électrique, ainsi que composant électrique

Info

Publication number
EP2737497A1
EP2737497A1 EP12740158.6A EP12740158A EP2737497A1 EP 2737497 A1 EP2737497 A1 EP 2737497A1 EP 12740158 A EP12740158 A EP 12740158A EP 2737497 A1 EP2737497 A1 EP 2737497A1
Authority
EP
European Patent Office
Prior art keywords
layer
base body
electrical component
contacts
sloa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP12740158.6A
Other languages
German (de)
English (en)
Other versions
EP2737497B1 (fr
Inventor
Thomas Feichtinger
Sebastian Brunner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of EP2737497A1 publication Critical patent/EP2737497A1/fr
Application granted granted Critical
Publication of EP2737497B1 publication Critical patent/EP2737497B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Definitions

  • the invention relates to a method for producing an electrical component which can be used, for example, for protection against electrostatic discharge or as a sensor, and to an electrical component produced by the method.
  • Electronic circuits which are generally operated at low supply and signal voltages, may be energized when a high voltage, such as an electrostatic overvoltage, occurs
  • multilayer varistors in SMD Surface Mounted Device
  • SMD Surface Mounted Device
  • LED Light Emitting Diode
  • ESD Electrostatic Discharge
  • SMD Surface Mounted Device
  • herstel ⁇ development of SMD multilayer varistors encountered so far on technical production limits. It is desirable to provide a method for manufacturing an electrical component, with which can be produced a device which has a very low component height on ⁇ . Furthermore, it is intended to specify an electrical component produced by the method.
  • a method of manufacturing an electrical device comprises providing a ceramic semiconductive one
  • Basic body having a surface and a surface opposite the first side surface, wherein a metallic layer is contained within the base body.
  • On the side surface of the body at least two further metallic layers are arranged separately. The arrangement of the main body and the other metallic layers is sintered.
  • An electrically insulating layer is arranged on the first side surface of the base body between the at least two further metallic layers as a passivation layer.
  • On the at least two wide ⁇ ren metallic layers is in each case arranged a contact layer by a chemical process zesses. The material of the base body is removed from ⁇ continuously from the surface of the base body to not more than to the arranged within the base body by the metallic layer che ⁇ mix process.
  • the material of the base body which is on the information contained in ⁇ nergur of the main body metal layer at ⁇ sorted, a sacrificial layer is to be etched down already during the chemical process of applying the contact layers by participating in the chemical process acids / bases.
  • the first side surface, the metal of the coating applied to the first side surface and the layer are on the unpassivated Be ⁇ rich electrically insulating layer are uncovered, trenches etched into the material of the Grundgropers.
  • a chemical process for applying the contact layer may, for example, electroless plating, for example, a
  • ENIGIG electroless nickel, electroless palladium immersion gold
  • electroplating where the electrolyte may be a corrosive acid or base.
  • the trench can be etched further for separating a component from the base body and the sacrificial layer can be removed up to the metallic layer arranged within the base body.
  • the metallic layer within the main body acts as an etch stop layer, so that the underlying Ma ⁇ material of the body is not further etched. Since arranged in ⁇ nergur of the material of the base body metalli ⁇ specific layer can be placed close to the first side surface of the base body in the material of the base body, the method ER- enables the production of a component with a low overall height.
  • the electrically insulating layer between the contacts is a passivation layer, which prevents the individual of the component arranged under the electrically insulating layer material of the body is etched during the chemical process or the etching process for ⁇ Ver.
  • the passivation layer disposed between the contacts for example, a material containing glass, silicon nitride (S13N 4), silicon carbide (SiC), alumina (Al 2 O 3) or a polymer, having.
  • the contact layer may be formed as a ⁇ zelne layer, for example silver. Alternatively, the contact layer may have multiple sub-layers. th, for example, different metal sequences, such as for example ⁇ nickel, palladium, gold or tin included.
  • ESD protection devices or ceramic sensors with component heights between a metallic layer acting as an electrode and the contact layers of less than 150 ym and typically of about 50 ym.
  • the electrical component can be produced inexpensively and used for the production of ultrathin single chips as well as for arrays.
  • An electrical component produced by the method comprises a ceramic semiconductive base body having a first side surface on which at least two spaced-apart contacts are arranged, and a second side surface opposite the first side surface, on which a metallic layer is arranged.
  • Each of the contacts has a further metallic layer which is disposed on the first side surface of the base body, and a con tact ⁇ layer which is attached ⁇ arranged on the further metallic layer.
  • Between the at least two contacts is an electrically insulating layer, by which the at least two contacts are electrically isolated from each other, angeord ⁇ net.
  • the electrical component has between the metalli ⁇ rule layer and the respective contact layer contacts a component height not exceeding 150 ym, preferably 50 ym to.
  • FIG. 1A shows a transverse view of an embodiment of an electrical component
  • Figure 1B is a plan view of the embodiment of the elec ⁇ cal device
  • Figure 2A shows a manufacturing step of an embodiment of a
  • FIG. 2B shows a further production step of the embodiment of the production method for the electrical
  • FIG. 2C shows a further production step of the embodiment of the production method for the electrical component
  • FIG. 2D shows a further production step of the embodiment of the production method for the electrical component
  • FIG. 2E shows a further production step of the embodiment of the production method for the electrical component
  • FIG. 2F shows a further production step of the embodiment of the production method for the electrical component
  • FIG. 3A shows a transverse view of a further embodiment of an electrical component
  • FIG. 3B shows a plan view of the further embodiment of the electrical component
  • FIG. 4A shows a transverse view of a further embodiment of the electrical component
  • FIG. 4B shows a plan view of a further embodiment of an electrical component
  • FIG. 5A shows an embodiment of an electrical component for protection against electrostatic discharge or as a ceramic sensor
  • FIG. 5B shows an equivalent circuit of an embodiment of an electrical component for protection against electrostatic discharge
  • FIG. 5C shows an equivalent circuit of an embodiment of an electrical component as a ceramic sensor.
  • FIG. 1A shows an embodiment 1 of an electrical component which can be used for example for protection against electrostatic discharge or as a sensor.
  • the electrical component comprises a ceramic semiconductive base body 10.
  • the base body 10 has a side surface SlOa and a side surface SlOb opposite the side surface S1Oa.
  • a metallic layer 40 between the soflä ⁇ chen SLOA and slob.
  • the metallic layer 40 may, for example silver contained ⁇ th.
  • On the side surface SLOA are at least two from each other the spaced contacts 21 and 22 are arranged.
  • the contacts 21 and 22 each have a metallic layer 210 and ei ⁇ ne contact layer 220.
  • the metallic layer 210 of the contact 21 and the contact 22 are each arranged on the side surface SlOa of the main body 10 at a distance from one another.
  • the contact layers 220 of the contacts 21 and 22 are respectively disposed on the metallic layer 210.
  • the metallic layer 210 of the contacts 21 and 22 may contain silver, for example.
  • the contact layer 220 may, for example, a material of nickel and / or gold aufwei ⁇ sen.
  • the respective contact layer 220 of the contacts 21 and 22 may have a partial layer 221 and a partial layer 222.
  • the sub-layer 221 may be disposed on the metallic layer 210 and the sub-layer 222 may be disposed on the sub-layer 221.
  • the sub-layer 221 may comprise a nickel material and the sub-layer 222 may comprise a gold material, for example.
  • Between the contacts 21 and 22 is on the side surface
  • an electrically insulating layer 30 is arranged.
  • the electrically insulating layer 30 is formed of ⁇ art that separates both the metallic layer 210 of the contact terminals 21 and 22 and the contact layers 220 of the two contacts 21 and 22 from each other. Through the layer 30 thus the two contacts 21 and 22 are electrically isolated from each other.
  • the electrically insulating layer 30 may, for example, a material made of glass contained ⁇ th.
  • FIG. 1B shows a plan view of the embodiment 1 of the electrical component shown in FIG. 1A. Shown are the contacts 21 and 22, in particular the respective Kon- Contact layer 220 of the contacts 21 and 22, which are separated from each other by the elec ⁇ ⁇ rical insulating layer 30 and thereby electrically isolated from each other.
  • the electrical component between the metallic layer 40 and the contact surfaces 220 may have a component height H of 50 ⁇ m.
  • the width B of the component can be ⁇ example, 100 ym and the length L can be 250 ym.
  • the contact layers 220 can each have a length LI of 50 ⁇ m and the electrically insulating layer 30 have a length L2 of 150 ⁇ m.
  • Figures 2A to 2F show an embodiment of a manufacturing method for producing an electrical component, which can be used, for example, to protect against electrostatic discharge or as a sensor.
  • a ceramic semiconductive base body 10 having a surface O10 and a side surface S1Oa opposite the surface O10 is provided, wherein a metallic layer 40 is contained within the base body. The within the
  • Base 10 arranged metallic layer 40 may be interrupted at least two places Ul, U2. To the sides of the bodies at ⁇ Ul and U2 arranged portions of the metallic layer 40 belong to other components.
  • the metallic layer 40 is disposed approximately parallel to the Oberflä ⁇ che O10 or the side surface of the SLOA Grundkör ⁇ pers in the interior of the base body.
  • the main body 10 with the metallic layer 40 contained therein may be formed as a wafer.
  • the laminating, stacking and pressing of the main body 10 takes place.
  • the wafer or main body 10 is structured on the side surface S1Oa with at least two metallic layers 210, which each form part of the contacts 21 and 22 of the electrical component.
  • Layers 210 are arranged at a distance apart from each other on the side surface SlOa of the main body. For this purpose, for example, a thin layer of a Materi ⁇ al made of silver on portions of the side surface SlOa, which are spaced from each other, are attached.
  • the at least two metallic layers 210 are arranged on the side surface SlOa of the base body 10 such that a region Bl and a region B2 of the side surface SlOa of the base body 10 are uncovered by the at least two further metallic layers.
  • the areas Bl and B2 are the points Ul and U2 arranged in projection un ⁇ ter.
  • metallic layers 210 are arranged, which belong to ⁇ their components.
  • the metallic layers 210 form a passivation layer for the underlying material of the base body.
  • Figure 2D shows a further manufacturing step, which bring the on ⁇ comprises a passivation layer on a portion of the side surface SLOA between the metallic layers 210th As passivation layer, between the metallic layers 210 of the contacts 21 and 22 an electrically insulating
  • Layer 30 for example made of a material made of glass, be ⁇ introduced .
  • the electrically insulating layer 30 can be indirectly on a portion of the side surface SlOa of
  • Layers 210 are arranged.
  • the passivation layer 30 can also be applied to partial sections of the metallic layer 210.
  • the areas Bl and B2 lead ⁇ ben still uncovered by a passivation.
  • the contacts 21 and 22 are completed by applying the contact layers 220 to the metallic layers 210 in each case.
  • a material which has, for example, nickel and / or gold, can be applied to the metallic layer 210.
  • a sub-layer 221 containing nickel and subsequently to the sub-layer 221 a sub-layer 222 containing gold may be deposited.
  • the application of the contact layers 220 on the metallic layers 210 can be effected by a chemical process without current.
  • the material of the base body is etched on the non-passivated regions B1 and B2.
  • a trench G is etched into the base body.
  • the material of the base body 10 can be removed at the areas Bl and B2 so far that the surface of the trench between the metallic layer 210 and the metallic layer 40 is located. Under a region B0 of the side surface SlOa which is covered by the metallic layers 210 acting as passivation layers and the electrical insulating layer 30, the etching of the material of the base body is prevented.
  • the material of the base body in the non-passivated surface O10 is etched in the direction of the metal ⁇ metallic layer 40th
  • the O10 between the surface and the metallic layer 40 existing material of the Grundkör ⁇ pers is a sacrificial layer that is removed during the chemical process of applying the contact layers, starting from the surface to a surface O10 O10 '. If the range between the original surface O10 and the metallic layer 40 represents the initial thickness of the sacrificial layer, the surface O10 can 'the sacrificial ⁇ layer after exposure to the chemical process for applying the contact surfaces 220 between the initial surface O10 of the sacrificial layer and the metallic Layer 40 are. Thus, the layer thickness of the base body above the metallic layer 40 further decreases during the chemical process for applying the contact layer 220.
  • Figure 2F shows a further manufacturing step this purpose, in a further etching process, which takes place, for example, anisotropic, the separation of the electrical components 1 from the wafer 10, the trenches at the regions Bl and B2 formed already in the chemical process of Aufbrin ⁇ gens of the contact surfaces 220 be further etched until the material of the body is completely removed under the interruptions Ul and U2 of the metallic layer 40.
  • the material of the base body can now to min- at least to the metallic layer 40 are removed.
  • the material of the ceramic semiconducting base body which still forms over the metallic layer 40, which forms the sacrificial layer, can be etched down to the metallic layer 40.
  • the metallic layer 40 acts as egg ⁇ ne etch stop layer so that the underlying material of the base body is not etched.
  • the components can be separated from the wafer composite.
  • the separation can alternatively be effected by breaking the individual components out of the wafer composite.
  • FIG 3A shows another embodiment of the electrical component 2, which is used, for example for protection against electrostatic discharge ⁇ or as a sensor, in a transverse view.
  • the electrostatic component comprises a ceramic semiconductive base body 10 which has a surface O10 and a surface area O10 opposite Soflä ⁇ che SlOa. Inside the material of the ceramic semiconductive body 10, a metallic layer 40 is provided inside the material of the ceramic semiconductive body 10.
  • the metallic layer 40 may comprise, for example, a material of silver.
  • At least two contacts 21 and 22 are arranged on the side surface SlOa of the ceramic semiconductive base body 10 at a distance from one another. Each of the contacts 21 and 22 comprises a metallic layer 210 and a contact layer 220.
  • the metallic layer 210 of the respective contact is disposed directly on the side surface SlOa of the main body and may, for example, contain a silver material.
  • the respective contact layer 220 of each of the contacts is disposed on the respective metallic layer 210.
  • the contact layer 220 may for example comprise a material selected from Ni ⁇ ckel and / or gold.
  • the contact layer 220 may For example, have a sub-layer 221, which is disposed on the metallic layer 210 of the respective contact.
  • a further partial layer 222 of the contact layer 220 may be arranged on the partial layer 221.
  • the sub-layer 221 may, for example, 222 may include a material selected from gold, a material made of nickel and the partial ⁇ layer.
  • an electrically insulating layer 30th The electrically insulating layer 30 may be on a Ab ⁇ section of the side surface SlOa between the metallic
  • Layers 210 may be arranged.
  • the passivation layer 30 is formed such that both the metallic layer 210 and the contact layer 220 of the respective contacts 21 and 22 are electrically insulated from each other.
  • FIG. 3B shows a plan view of the embodiment of the electrical component 2 shown in FIG. 3A.
  • the contacts 21 and 22, in particular the contact layers 220 of the respective contacts 21 and 22, are arranged ⁇ lierende layer 30 are electrically isolated from each other.
  • the electrical component 2 shown in FIGS. 3A and 3B can be realized, for example, with a component height H of 50 ⁇ m measured between the surface O10 and the contact layers 220.
  • the width B of the device may be 100 ym and the length L may be 250 ym.
  • the contacts 21 and 22 each have a length LI of 50 ym and the electrically insulating layer 30 have a length L2 of 150 ym.
  • FIG. 2 shows a further embodiment of the electrical component 3, which is used, for example for protection against electrostatic discharge ⁇ or as a sensor, in a transverse view. Similar to the embodiment shown in FIG. 1, the electrical component has a ceramic semiconductive base body 10. On a side surface SlOa of the
  • Base 10 are spaced from each other at least two contacts.
  • the electrical component is formed as an array with more than two contacts.
  • the device may, for example, four contacts 21, 22, 23 and 24 have. In the transverse view shown in Figure 4A only the contacts 21 and 22 are visible.
  • Each of the contacts 21 and 22 has a metallic layer 210, for example a layer of silver, which are arranged on the side surface SlOa spaced from each other. Furthermore, the contacts each have a contact layer 220, which is arranged on the respective metallic layer 210 of the contacts.
  • the contact layer 220 may comprise a material of nickel and / or gold.
  • the contact layer 220 may include, for example, a sub-layer 221 and a sub-layer 222.
  • the sub-layer 221 is disposed directly on the metallic layer 210 of the respective contact.
  • the sub-layer 222 is arranged on the sub-layer 221 of the respective contact.
  • the sub-layer 221 may ⁇ example, a material made of nickel, and the sub-layer 222 may contain a material of gold.
  • an electrically insulating layer 30 is arranged, through which the contacts 21 and 22 and thus the respective metallic layer 210 and the respective contact layer 220 of the contacts are electrically isolated from each other.
  • the electrically insulating layer 30 may for example be arranged directly on a section of the Be ⁇ ten Design SLOA of the base body 10 between the metallic layers 210th
  • the electrically insulating layer represents a passivation layer and may, for example, comprise a material made of glass.
  • FIG. 4B shows the electrical component embodiment 3 of the electrical component shown in FIG. 4A in plan view of the contacts 21, 22, 23 and 24 and the electrically insulating layer 30. As shown in FIG. 4B, the contacts 21, 22, 23 and 24 are through the interposed electrically insulating
  • the electrical component 3 between the metallic layer 40 and the contact surfaces 220 may have a component height H of 50 ⁇ m.
  • the embodiment 3 of the electrical component has a square base.
  • the electrical component may for example have a width B and a length L of 250 ym.
  • the contacts can each have a width Bl of 100 ym and the elekt ⁇ driven insulating layer has a width B2 of 50 ym.
  • the contacts may each have a length LI of 50 ym and the electrically insulating layer may have a length L2 of 150 ym.
  • Figure 5A shows the embodiment 1 of the electrical component in the form of a passivated ceramic chip that includes the basic ⁇ body 10 which has contacts 21 and 22, the interposed electrically insulating layer 30 and the further metallic layer 40th
  • an ESD device with a Multilagenva ⁇ RISTOR or a use as a sensor device can be a multilayer NTC (negative temperature coefficient), for example - realize resistance.
  • Figure 5B shows an implementation of the device as Va ⁇ RISTOR, so that the component can be used for example as ESD protection component.
  • the base body 10 of the device contains, for example, a material made of zinc oxide, and praseodymium, wherein ⁇ play, ZnO (Pr).
  • ⁇ play ZnO
  • do ⁇ patented zinc oxide can be provided as the material of the base body 10 with praseodymium.
  • a material of zinc oxide and bismuth, for example ZnO (Bi) may be used.
  • the contacts 21 and 22 each form a terminal for applying a reference potential, for example, the ground potential.
  • the metallic layer 40 has besides the function as
  • Electrode in the form of the metallic layer 40 and the contact 22 of the ceramic semiconductive body 10 forms a further voltage-dependent resistor R2.
  • FIG. 5C shows an equivalent circuit diagram of the component, if the material of the basic body is a material with a negative Temperature coefficient, for example, an NTC material is used.
  • the device can be used as a kera ⁇ mix sensor.
  • the main body 10 forms between the contacts 21 and 22 and the metallic layer 40 each have a temperature-dependent resistor R3 and R4.
  • the contacts 21 and 22 can be used as terminals for applying a reference potential, for example, the ground potential.
  • the metallic layer 40 has the function of a current-carrying electrode during operation of the device. Between the metallic layer 40 and the contact 21 of the ceramic semiconductive body 10 forms the temperature-dependent resistor R3. Between the metallic layer 40 and the contact 22 of the ceramic semiconducting forms

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)
  • Pressure Sensors (AREA)
  • Details Of Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un composant électrique, qui comprend la fourniture d'un corps de base semiconducteur en céramique (10) ayant une surface supérieure (O10) et une première surface latérale (S10a), opposée à la surface supérieure (O10), une couche métallique (40) étant disposée à l'intérieur du corps de base. Après application d'au moins deux autres couches métalliques (210) séparément sur la surface latérale (S10a) du corps de base, le tout subit un frittage. Une couche électriquement isolante (30) est disposée entre les au moins deux autres couches métalliques (210). Un procédé chimique est utilisé pour produire à chaque fois une couche de contact (220) sur les couches métalliques (210). Le matériau du corps de base (10), à partir de la surface supérieure (O10) du corps de base (10), est éliminé jusqu'à au plus la couche métallique (40) se trouvant à l'intérieur du corps de base.
EP12740158.6A 2011-07-29 2012-07-26 Procédé de fabrication d'un composant électrique et composant électrique Active EP2737497B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011109007A DE102011109007A1 (de) 2011-07-29 2011-07-29 Verfahren zum Herstellen eines elektrischen Bauelements und elektrisches Bauelement
PCT/EP2012/064726 WO2013017531A1 (fr) 2011-07-29 2012-07-26 Procédé de fabrication d'un composant électrique, ainsi que composant électrique

Publications (2)

Publication Number Publication Date
EP2737497A1 true EP2737497A1 (fr) 2014-06-04
EP2737497B1 EP2737497B1 (fr) 2020-12-23

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EP12740158.6A Active EP2737497B1 (fr) 2011-07-29 2012-07-26 Procédé de fabrication d'un composant électrique et composant électrique

Country Status (6)

Country Link
US (1) US9230719B2 (fr)
EP (1) EP2737497B1 (fr)
JP (1) JP5813227B2 (fr)
DE (1) DE102011109007A1 (fr)
TW (1) TWI562294B (fr)
WO (1) WO2013017531A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104198079A (zh) 2014-07-30 2014-12-10 肇庆爱晟电子科技有限公司 一种高精度高可靠快速响应热敏芯片及其制作方法
DE102014219913A1 (de) * 2014-10-01 2016-04-07 Phoenix Contact Gmbh & Co. Kg Überspannungsschutzvorrichtung mit Überwachungsfunktion
USD778846S1 (en) * 2014-12-15 2017-02-14 Kingbright Electronics Co. Ltd. LED component
USD778847S1 (en) * 2014-12-15 2017-02-14 Kingbright Electronics Co. Ltd. LED component
WO2017036511A1 (fr) * 2015-08-31 2017-03-09 Epcos Ag Composant multicouche électrique pour technologie de montage en surface, et procédé de fabrication d'un composant multicouche électrique
JP6930586B2 (ja) * 2017-05-23 2021-09-01 株式会社村田製作所 電子部品の製造方法
DE102017111415A1 (de) * 2017-05-24 2018-11-29 Epcos Ag Elektrisches Bauteil mit Sicherungselement
US11575095B2 (en) 2018-03-19 2023-02-07 Ricoh Company, Ltd. Photoelectric conversion device, process cartridge, and image forming apparatus
WO2020018651A1 (fr) 2018-07-18 2020-01-23 Avx Corporation Couche de passivation de varistance et son procédé de production

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1551999A (fr) * 1967-10-20 1969-01-03
US4200970A (en) * 1977-04-14 1980-05-06 Milton Schonberger Method of adjusting resistance of a thermistor
JPH06302406A (ja) * 1993-04-19 1994-10-28 Mitsubishi Materials Corp チップ型サーミスタ及びその製造方法
JPH10508430A (ja) * 1994-06-09 1998-08-18 チップスケール・インコーポレーテッド 抵抗器の製造
DE19646441A1 (de) 1996-11-11 1998-05-14 Heusler Isabellenhuette Elektrischer Widerstand und Verfahren zu seiner Herstellung
JPH10335114A (ja) * 1997-04-04 1998-12-18 Murata Mfg Co Ltd サーミスタ素子
JPH1154301A (ja) * 1997-08-07 1999-02-26 Murata Mfg Co Ltd チップ型サーミスタ
JPH11283803A (ja) * 1998-03-31 1999-10-15 Murata Mfg Co Ltd チップ抵抗器
JP2001167908A (ja) * 1999-12-03 2001-06-22 Tdk Corp 半導体電子部品
JP4548110B2 (ja) * 2004-12-13 2010-09-22 パナソニック株式会社 チップ部品の製造方法
US7932806B2 (en) * 2007-03-30 2011-04-26 Tdk Corporation Varistor and light emitting device
CN102483978B (zh) * 2009-08-28 2015-03-11 株式会社村田制作所 热敏电阻及其制造方法
US9076576B2 (en) * 2010-11-22 2015-07-07 Tdk Corporation Chip thermistor and thermistor assembly board
JP5664760B2 (ja) * 2011-02-24 2015-02-04 株式会社村田製作所 電子部品の実装構造

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2013017531A1 *

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DE102011109007A1 (de) 2013-01-31
TW201308528A (zh) 2013-02-16
US9230719B2 (en) 2016-01-05
US20140225710A1 (en) 2014-08-14
JP2014524154A (ja) 2014-09-18
TWI562294B (en) 2016-12-11
EP2737497B1 (fr) 2020-12-23
WO2013017531A1 (fr) 2013-02-07
JP5813227B2 (ja) 2015-11-17

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