EP2628178A2 - Système de câblage à fil épais et procédé de fabrication - Google Patents

Système de câblage à fil épais et procédé de fabrication

Info

Publication number
EP2628178A2
EP2628178A2 EP11810567.5A EP11810567A EP2628178A2 EP 2628178 A2 EP2628178 A2 EP 2628178A2 EP 11810567 A EP11810567 A EP 11810567A EP 2628178 A2 EP2628178 A2 EP 2628178A2
Authority
EP
European Patent Office
Prior art keywords
wire
section
bonding
thick
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11810567.5A
Other languages
German (de)
English (en)
Inventor
Andreas Middendorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Berlin
Original Assignee
Technische Universitaet Berlin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Berlin filed Critical Technische Universitaet Berlin
Publication of EP2628178A2 publication Critical patent/EP2628178A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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Definitions

  • the invention relates to a thick-wire bonding arrangement and a method for manufacturing. Background of the invention
  • Wire bonding is one of the technologies used to make electrical connections.
  • the wire bonding is usually used to connect a so-called Dies, in particular, for example, the semiconductor of an integrated semiconductor, a light-emitting diode or a senor, with electrical terminals of a chip package.
  • the process of wire bonding is then referred to as wire bonding.
  • the bonding of thin wires and thick wires there is a distinction between the bonding of thin wires and thick wires. While the thin wires, which often consist of pure gold or of alloyed or doped gold, have wire thicknesses between about 25 ⁇ and less than ⁇ , the field of thick-wire bonding thick wires with diameters between about ⁇ and about 500 ⁇ . Such thick wires are used to cope with high power loads, for example in so-called power semiconductors. In the field of thick-wire bonding, the different coefficients of thermal expansion of the materials involved, ie in particular of the semiconductor on the one hand and of the thick wire on the other hand, lead to fatigue cracks in the contacting plane of the thick-wire bonds. There is therefore a need for technologies to avoid such problems with thick wire bonds.
  • the document DE 4031 814 A1 relates to a power semiconductor package with an integrated power semiconductor, which is arranged on a carrier and can be connected via line connections to surrounding adjacent contact points. Summary of the invention
  • the object of the invention is to provide improved technologies in the field of thick-wire bonding, with which the probability of fatigue problems of thick-wire bonds is reduced or even completely eliminated.
  • the invention encompasses the idea of a thick-wire bonding arrangement comprising a substrate, a thick wire and a high-current thick-wire bond in which an end-side bonding portion of the thick wire, which extends to the wire end of the thick wire, is bonded to the substrate, such that in the region of Bonding portion is formed a bonding contact between the thick wire and the substrate, wherein the thick wire has a taper portion which adjoins the wire end and in which the wire cross-section tapers towards the wire end.
  • a method of making a thick-wire bond assembly comprising the steps of: providing a substrate, providing a thick wire, and forming a high-current thick-wire bond by forming an end-bond portion of the thick wire that extends to the wire end of the thick wire, is bonded to the substrate, such that in the region of the bonding portion, a bonding contact between the thick wire and the substrate is formed, wherein the thick wire is formed with a tapered portion which adjoins the wire end and in which the wire cross-section tapered towards the end of the wire.
  • the provision of the taper section which extends in the bonding section of the thick wire to the wire end, reduces the shear stress effective in the area of the bonding section, resulting in improved reliability of the bond connection between Thick wire and substrate leads. It reduces the likelihood of fatigue cracks.
  • the current carrying capacity remains in the area of the bonding section.
  • the specifically modified geometry in the area of the tapering section ensures that a greater resistance to the bond connection is achieved.
  • the substrate may be provided with a surface coating, such as a metallization.
  • a surface coating such as a metallization.
  • the thick wire is bonded to the metallization.
  • the contact surface formed in the region of the bonding contact between the thick wire and the substrate is also referred to as the landing surface.
  • the tapering section preferably proceeds from a region of full thickness of the thick wire.
  • the tapering of the wire cross-section is preferably carried out continuously from the beginning of the tapering section, whereby the tapering can take place uniformly or unevenly towards the end of the wire.
  • a uniform taper is particularly given when the degree of decrease of the wire cross section per length over the entire taper section is the same. An uneven taper then means that this is not the case for at least one section.
  • a preferred embodiment of the invention provides that the bonding contact between the thick wire and the substrate in the region of the bonding portion is formed continuously. This means that a continuous contact surface (landing surface) is formed in the region of the bonding portion between the substrate and the thick wire. The bonding contact then extends in particular to the wire end.
  • the tapering section is designed in several stages, wherein tapered sections are formed with different degrees of taper.
  • This embodiment corresponds to an uneven taper in the region of the tapering section. Different degrees of taper, for example, correspond to steeper and shallower slopes, to the wire end fall off with different inclination.
  • the taper in the region of the tapering section may be uniform throughout.
  • An advantageous embodiment of the invention provides that the wire cross-section is formed in the tapering section at least two sides tapered.
  • the wire cross section of the thick wire decreases on several sides.
  • An all-round decrease of the wire cross section in the area of the tapering section can also be provided, with the exception of the surface section of the thick wire which is included in the bonding contact.
  • the tapering section is designed with a substantially flat side surface sloping down from a thick wire side.
  • the sloping side surface is made as a top surface on the thick wire top.
  • Such a taper can be produced, for example, by means of mechanical machining with a punch, which acts from above on the end section of the thick wire.
  • the tapering section terminates at the wire end to a remaining end face socket.
  • the taper extends expiring towards a wire tip. Remains the Stirn vomsockelab- section, it has, starting from the substrate plane preferably a height between about 20 and about 40%, more preferably between about 20% and about 30%> the wire thickness.
  • a development of the invention can provide that the tapering section is formed with a notched taper.
  • the notches are substantially perpendicular or oblique to the thick wire in the area of the bond section. This then corresponds to a substantially vertical or oblique formation with respect to the thick wire-facing surface of the substrate.
  • the angle between the notch longitudinal direction and the wire longitudinal direction may be between 0 and 180 degrees.
  • a preferred development of the invention provides that the tapering section extends over a range of about 60% to about 70% of the length of the bonding section on the wire end side.
  • the taper portion extends in this length from the wire end.
  • the bonding portion extends over a length which corresponds to a value of about 10% to about 20% of the thickness of the thick wire.
  • the tapering portion is formed with its tapered geometry prior to bonding of the bonding portion to the substrate.
  • the formation of the rejuvenation section can also take place after the bonding.
  • the tapering section is formed in the course of the bonding of the bonding section to the substrate.
  • the production of the tapering section can take place in various ways, for example by means of grinding, lasering and / or cutting.
  • the corresponding step can be readily integrated into the known as such processes of thick wire bonding.
  • it may be provided to produce the tapered section by using a bonding tool with a modified cutting angle, which otherwise usually acts substantially perpendicular to the bonded wire.
  • FIG. 1 shows a schematic illustration of a thick-wire bonding arrangement, in which an end-side bonding section of a thick wire is bonded to a substrate
  • FIG. 2 shows a schematic illustration of a further thick-wire bonding arrangement, in which an end-side bonding section of a thick wire is bonded to a substrate, notches being formed in the bonding section at the end.
  • Fig. 1 shows a schematic representation of a thick-wire bond order with a thick wire 1 and a substrate 2, which is in the illustrated embodiment, a provided with a metallization 3 semiconductor substrate, for example, a silicon substrate.
  • a bonding section 4 of the thick wire 1 with the length a rests on the substrate 2.
  • the thick wire 1 has a wire cross section (wire thickness) d, where d is about 100 ⁇ ⁇ about 500 ⁇ .
  • the bonding portion 4 is bonded to the substrate 2, so that a bonding contact 5 (land area) is formed.
  • the thick wire 1 is, for example, a thick wire of aluminum.
  • a tapered portion 6 is formed with a length c in the end, in which the wire cross-section of the thick wire 1 in the illustrated embodiment continuously and uniformly decreases towards the wire end 7, wherein at the wire end 7 an end face socket 8 is provided, which extends from the surface the metallization 3 rises from. At least the surface area of the thick wire 1, which lies in the region of the bonding contact 5, is excluded from the taper.
  • Fig. 2 shows a schematic representation of another thick-wire bonding arrangement.
  • the same reference numerals as in Fig. 1 are used in Fig. 2.
  • the thick wire 1 in the further thick-wire bonding arrangement according to FIG. 2 has notches 9 whose depth increases continuously and uniformly towards the wire end 7.
  • the formation of the geometric shape in the region of the tapering section 6 can be carried out before, after and / or during the thick-wire bonding.
  • it may also be provided to partially produce the taper prior to wire bonding in order to rework or further develop the taper after wire bonding.
  • different processing methods such as grinding, laser cutting or cutting can be used.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

La présente invention concerne un système de câblage à fil épais comprenant un substrat (2), un fil épais (1) et une connexion de câblage à fil épais à haute intensité. Selon l'invention, une section de câblage côté extrémité (4) du fil épais (1) qui s'étend en direction de l'extrémité (7) du fil épais (1), est soudée sur le substrat (2) de manière que dans la région de ladite section de câblage (4) un contact de soudure (5) est formé entre le fil épais (1) et le substrat (2). Le fil épais (1) présente une section effilée (6) qui est raccordée à l'extrémité (7) du fil et dans laquelle la section transversale du fil est décroissante en direction de l'extrémité (7) du fil. L'invention concerne également un procédé de fabrication d'un système de câblage à fil épais.
EP11810567.5A 2010-10-12 2011-09-07 Système de câblage à fil épais et procédé de fabrication Withdrawn EP2628178A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010038130A DE102010038130B4 (de) 2010-10-12 2010-10-12 Dickdraht-Bondanordnung und Verfahren zum Herstellen
PCT/DE2011/075214 WO2012062300A2 (fr) 2010-10-12 2011-09-07 Système de câblage à fil épais et procédé de fabrication

Publications (1)

Publication Number Publication Date
EP2628178A2 true EP2628178A2 (fr) 2013-08-21

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EP11810567.5A Withdrawn EP2628178A2 (fr) 2010-10-12 2011-09-07 Système de câblage à fil épais et procédé de fabrication

Country Status (4)

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US (1) US9992861B2 (fr)
EP (1) EP2628178A2 (fr)
DE (1) DE102010038130B4 (fr)
WO (1) WO2012062300A2 (fr)

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Publication number Priority date Publication date Assignee Title
DE102014103180A1 (de) 2014-03-10 2015-09-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Bestimmen einer Bondverbindung in einer Bauteilanordnung und Prüfvorrichtung
EP3410481A1 (fr) * 2017-06-01 2018-12-05 HS Elektronik Systeme GmbH Module de puce d'alimentation à semi-conducteur
US11515284B2 (en) * 2020-07-14 2022-11-29 Semiconductor Components Industries, Llc Multi-segment wire-bond

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Also Published As

Publication number Publication date
DE102010038130A1 (de) 2012-04-12
US20130220673A1 (en) 2013-08-29
WO2012062300A2 (fr) 2012-05-18
US9992861B2 (en) 2018-06-05
WO2012062300A3 (fr) 2012-07-12
DE102010038130B4 (de) 2012-04-19

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