EP2628178A2 - Thick-wire bond arrangement and method for producing - Google Patents

Thick-wire bond arrangement and method for producing

Info

Publication number
EP2628178A2
EP2628178A2 EP11810567.5A EP11810567A EP2628178A2 EP 2628178 A2 EP2628178 A2 EP 2628178A2 EP 11810567 A EP11810567 A EP 11810567A EP 2628178 A2 EP2628178 A2 EP 2628178A2
Authority
EP
European Patent Office
Prior art keywords
wire
section
bonding
thick
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11810567.5A
Other languages
German (de)
French (fr)
Inventor
Andreas Middendorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Berlin
Original Assignee
Technische Universitaet Berlin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Berlin filed Critical Technische Universitaet Berlin
Publication of EP2628178A2 publication Critical patent/EP2628178A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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Definitions

  • the invention relates to a thick-wire bonding arrangement and a method for manufacturing. Background of the invention
  • Wire bonding is one of the technologies used to make electrical connections.
  • the wire bonding is usually used to connect a so-called Dies, in particular, for example, the semiconductor of an integrated semiconductor, a light-emitting diode or a senor, with electrical terminals of a chip package.
  • the process of wire bonding is then referred to as wire bonding.
  • the bonding of thin wires and thick wires there is a distinction between the bonding of thin wires and thick wires. While the thin wires, which often consist of pure gold or of alloyed or doped gold, have wire thicknesses between about 25 ⁇ and less than ⁇ , the field of thick-wire bonding thick wires with diameters between about ⁇ and about 500 ⁇ . Such thick wires are used to cope with high power loads, for example in so-called power semiconductors. In the field of thick-wire bonding, the different coefficients of thermal expansion of the materials involved, ie in particular of the semiconductor on the one hand and of the thick wire on the other hand, lead to fatigue cracks in the contacting plane of the thick-wire bonds. There is therefore a need for technologies to avoid such problems with thick wire bonds.
  • the document DE 4031 814 A1 relates to a power semiconductor package with an integrated power semiconductor, which is arranged on a carrier and can be connected via line connections to surrounding adjacent contact points. Summary of the invention
  • the object of the invention is to provide improved technologies in the field of thick-wire bonding, with which the probability of fatigue problems of thick-wire bonds is reduced or even completely eliminated.
  • the invention encompasses the idea of a thick-wire bonding arrangement comprising a substrate, a thick wire and a high-current thick-wire bond in which an end-side bonding portion of the thick wire, which extends to the wire end of the thick wire, is bonded to the substrate, such that in the region of Bonding portion is formed a bonding contact between the thick wire and the substrate, wherein the thick wire has a taper portion which adjoins the wire end and in which the wire cross-section tapers towards the wire end.
  • a method of making a thick-wire bond assembly comprising the steps of: providing a substrate, providing a thick wire, and forming a high-current thick-wire bond by forming an end-bond portion of the thick wire that extends to the wire end of the thick wire, is bonded to the substrate, such that in the region of the bonding portion, a bonding contact between the thick wire and the substrate is formed, wherein the thick wire is formed with a tapered portion which adjoins the wire end and in which the wire cross-section tapered towards the end of the wire.
  • the provision of the taper section which extends in the bonding section of the thick wire to the wire end, reduces the shear stress effective in the area of the bonding section, resulting in improved reliability of the bond connection between Thick wire and substrate leads. It reduces the likelihood of fatigue cracks.
  • the current carrying capacity remains in the area of the bonding section.
  • the specifically modified geometry in the area of the tapering section ensures that a greater resistance to the bond connection is achieved.
  • the substrate may be provided with a surface coating, such as a metallization.
  • a surface coating such as a metallization.
  • the thick wire is bonded to the metallization.
  • the contact surface formed in the region of the bonding contact between the thick wire and the substrate is also referred to as the landing surface.
  • the tapering section preferably proceeds from a region of full thickness of the thick wire.
  • the tapering of the wire cross-section is preferably carried out continuously from the beginning of the tapering section, whereby the tapering can take place uniformly or unevenly towards the end of the wire.
  • a uniform taper is particularly given when the degree of decrease of the wire cross section per length over the entire taper section is the same. An uneven taper then means that this is not the case for at least one section.
  • a preferred embodiment of the invention provides that the bonding contact between the thick wire and the substrate in the region of the bonding portion is formed continuously. This means that a continuous contact surface (landing surface) is formed in the region of the bonding portion between the substrate and the thick wire. The bonding contact then extends in particular to the wire end.
  • the tapering section is designed in several stages, wherein tapered sections are formed with different degrees of taper.
  • This embodiment corresponds to an uneven taper in the region of the tapering section. Different degrees of taper, for example, correspond to steeper and shallower slopes, to the wire end fall off with different inclination.
  • the taper in the region of the tapering section may be uniform throughout.
  • An advantageous embodiment of the invention provides that the wire cross-section is formed in the tapering section at least two sides tapered.
  • the wire cross section of the thick wire decreases on several sides.
  • An all-round decrease of the wire cross section in the area of the tapering section can also be provided, with the exception of the surface section of the thick wire which is included in the bonding contact.
  • the tapering section is designed with a substantially flat side surface sloping down from a thick wire side.
  • the sloping side surface is made as a top surface on the thick wire top.
  • Such a taper can be produced, for example, by means of mechanical machining with a punch, which acts from above on the end section of the thick wire.
  • the tapering section terminates at the wire end to a remaining end face socket.
  • the taper extends expiring towards a wire tip. Remains the Stirn vomsockelab- section, it has, starting from the substrate plane preferably a height between about 20 and about 40%, more preferably between about 20% and about 30%> the wire thickness.
  • a development of the invention can provide that the tapering section is formed with a notched taper.
  • the notches are substantially perpendicular or oblique to the thick wire in the area of the bond section. This then corresponds to a substantially vertical or oblique formation with respect to the thick wire-facing surface of the substrate.
  • the angle between the notch longitudinal direction and the wire longitudinal direction may be between 0 and 180 degrees.
  • a preferred development of the invention provides that the tapering section extends over a range of about 60% to about 70% of the length of the bonding section on the wire end side.
  • the taper portion extends in this length from the wire end.
  • the bonding portion extends over a length which corresponds to a value of about 10% to about 20% of the thickness of the thick wire.
  • the tapering portion is formed with its tapered geometry prior to bonding of the bonding portion to the substrate.
  • the formation of the rejuvenation section can also take place after the bonding.
  • the tapering section is formed in the course of the bonding of the bonding section to the substrate.
  • the production of the tapering section can take place in various ways, for example by means of grinding, lasering and / or cutting.
  • the corresponding step can be readily integrated into the known as such processes of thick wire bonding.
  • it may be provided to produce the tapered section by using a bonding tool with a modified cutting angle, which otherwise usually acts substantially perpendicular to the bonded wire.
  • FIG. 1 shows a schematic illustration of a thick-wire bonding arrangement, in which an end-side bonding section of a thick wire is bonded to a substrate
  • FIG. 2 shows a schematic illustration of a further thick-wire bonding arrangement, in which an end-side bonding section of a thick wire is bonded to a substrate, notches being formed in the bonding section at the end.
  • Fig. 1 shows a schematic representation of a thick-wire bond order with a thick wire 1 and a substrate 2, which is in the illustrated embodiment, a provided with a metallization 3 semiconductor substrate, for example, a silicon substrate.
  • a bonding section 4 of the thick wire 1 with the length a rests on the substrate 2.
  • the thick wire 1 has a wire cross section (wire thickness) d, where d is about 100 ⁇ ⁇ about 500 ⁇ .
  • the bonding portion 4 is bonded to the substrate 2, so that a bonding contact 5 (land area) is formed.
  • the thick wire 1 is, for example, a thick wire of aluminum.
  • a tapered portion 6 is formed with a length c in the end, in which the wire cross-section of the thick wire 1 in the illustrated embodiment continuously and uniformly decreases towards the wire end 7, wherein at the wire end 7 an end face socket 8 is provided, which extends from the surface the metallization 3 rises from. At least the surface area of the thick wire 1, which lies in the region of the bonding contact 5, is excluded from the taper.
  • Fig. 2 shows a schematic representation of another thick-wire bonding arrangement.
  • the same reference numerals as in Fig. 1 are used in Fig. 2.
  • the thick wire 1 in the further thick-wire bonding arrangement according to FIG. 2 has notches 9 whose depth increases continuously and uniformly towards the wire end 7.
  • the formation of the geometric shape in the region of the tapering section 6 can be carried out before, after and / or during the thick-wire bonding.
  • it may also be provided to partially produce the taper prior to wire bonding in order to rework or further develop the taper after wire bonding.
  • different processing methods such as grinding, laser cutting or cutting can be used.

Abstract

The invention relates to a thick-wire bond arrangement, having a substrate (2), a thick wire (1) and a high-voltage thick-wire bond connection, where an end bond section (4) of the thick wire (1), which extends towards the end (7) of the thick wire (1), is bonded to the substrate (2), such that a bond contact (5) between the thick wire (1) and the substrate (2) is formed in the region of the bond section (4), the thick wire (1) having a tapering section (6) which adjoins the end (7) of the wire and in which the cross-section of the wire tapers towards the end (7) of the wire. The application further relates to a method for producing a thick-wire bond arrangement.

Description

Dickdraht-Bondanordnung und Verfahren zum Herstellen  Thick wire bonding assembly and method of manufacture
Die Erfindung betrifft eine Dickdraht-Bondanordnung sowie ein Verfahren zum Herstellen. Hintergrund der Erfindung The invention relates to a thick-wire bonding arrangement and a method for manufacturing. Background of the invention
Das Drahtbonden gehört zu den Technologien beim Ausbilden elektrischer Verbindungen. Das Drahtbonden dient üblicherweise zum Verbinden eines sogenannten Dies, insbesondere zum Beispiel der Halbleiter eines integrierten Halbleiters, eine Leuchtdiode oder einen Sen- sor, mit elektrischen Anschlüssen eines Chipgehäuses. Der Vorgang der Drahtkontaktierung wird dann als Drahtbonden bezeichnet. Wire bonding is one of the technologies used to make electrical connections. The wire bonding is usually used to connect a so-called Dies, in particular, for example, the semiconductor of an integrated semiconductor, a light-emitting diode or a senor, with electrical terminals of a chip package. The process of wire bonding is then referred to as wire bonding.
Es wird zwischen dem Bonden von Dünndrähten und Dickdrähten unterschieden. Während die Dünndrähte, welche häufig aus reinem Gold oder auch aus legiertem oder dotiertem Gold bestehen, Drahtdicken zwischen etwa 25 μιη und weniger als ΙΟΟμιη aufweisen, betrifft der Bereich des Dickdraht-Bondens Dickdrähte mit Durchmessern zwischen etwa ΙΟΟμιη und etwa 500μιη. Solche Dickdrähte werden genutzt, um hohe Stromlasten zu bewältigen, beispielsweise in sogenannten Leistungshalbleitern. Auf dem Gebiet des Dickdraht-Bondens führen die unterschiedlichen thermischen Ausdehnungskoeffizienten der beteiligten Materialien, also insbesondere des Halbleiters einerseits und des Dickdrahtes andererseits, zu Ermüdungsrissen in der Kontaktierungsebene der Dickdraht-Bondverbindungen. Es besteht deshalb Bedarf für Technologien zur Vermeidung von solchen Problemen bei Dickdraht-Bondverbindungen. There is a distinction between the bonding of thin wires and thick wires. While the thin wires, which often consist of pure gold or of alloyed or doped gold, have wire thicknesses between about 25 μιη and less than ΙΟΟμιη, the field of thick-wire bonding thick wires with diameters between about ΙΟΟμιη and about 500μιη. Such thick wires are used to cope with high power loads, for example in so-called power semiconductors. In the field of thick-wire bonding, the different coefficients of thermal expansion of the materials involved, ie in particular of the semiconductor on the one hand and of the thick wire on the other hand, lead to fatigue cracks in the contacting plane of the thick-wire bonds. There is therefore a need for technologies to avoid such problems with thick wire bonds.
Das Dokument DE 4031 814 AI betrifft eine Leistungshalbleiter- Verpackung mit einem integrierten Leistungshalbleiter, der auf einem Träger angeordnet und über Leitungsverbindungen mit umgebenden benachbarten Kontaktpunkten verbindbar ist. Zusammenfassung der Erfindung The document DE 4031 814 A1 relates to a power semiconductor package with an integrated power semiconductor, which is arranged on a carrier and can be connected via line connections to surrounding adjacent contact points. Summary of the invention
Aufgabe der Erfindung ist es, verbesserte Technologien auf dem Gebiet des Dickdraht- Bondens anzugeben, mit denen die Wahrscheinlichkeit für Ermüdungsprobleme von Dick- draht-Bondverbindungen vermindert oder sogar ganz ausgeschlossen ist. The object of the invention is to provide improved technologies in the field of thick-wire bonding, with which the probability of fatigue problems of thick-wire bonds is reduced or even completely eliminated.
Diese Aufgabe wird erfindungsgemäß durch eine Dickdraht-Bondanordnung nach dem unabhängigen Anspruch 1 sowie ein Verfahren zum Herstellen einer Dickdraht-Bondanordnung nach dem unabhängigen Anspruch 10 gelöst. Vorteilhafte Ausgestaltungen der Erfindung sind Gegenstand von abhängigen Unteransprüchen. This object is achieved by a thick-wire bonding arrangement according to independent claim 1 and a method for producing a thick-wire bonding arrangement according to independent claim 10. Advantageous embodiments of the invention are the subject of dependent subclaims.
Die Erfindung umfasst den Gedanken einer Dickdraht-Bondanordnung mit einem Substrat, einem Dickdraht und einer Hochstrom-Dickdrahtbondverbindung, bei der ein endseitiger Bondabschnitt des Dickdrahtes, welcher sich zum Drahtende des Dickdrahtes hin erstreckt, auf das Substrat gebondet ist, derart, dass im Bereich des Bondabschnitts ein Bondkontakt zwischen dem Dickdraht und dem Substrat gebildet ist, wobei der Dickdraht einen Verjüngungsabschnitt aufweist, welcher sich an das Drahtende anschließt und in welchem sich der Drahtquerschnitt zum Drahtende hin verjüngt. Nach einem weiteren Aspekt der Erfindung ist ein Verfahren zum Herstellen einer Dickdraht- Bondanordnung vorgesehen, wobei das Verfahren die folgenden Schritte umfasst: Bereitstellen eines Substrats, Bereitstellen eines Dickdrahtes und Ausbilden einer Hochstrom-Dickdrahtbondverbindung, indem ein endseitiger Bondabschnitt des Dickdrahtes, welcher sich zum Drahtende des Dickdrahtes hin erstreckt, auf das Substrat gebondet wird, derart, dass im Bereich des Bondabschnitts ein Bondkontakt zwischen dem Dickdraht und dem Substrat gebildet wird, wobei der Dickdraht mit einem Verjüngungsabschnitt gebildet wird, welcher sich an das Drahtende anschließt und in welchem sich der Drahtquerschnitt zum Drahtende hin verjüngt. Das Vorsehen des Verjüngungsabschnitts, welcher sich im Bondabschnitt des Dickdrahtes bis zum Drahtende hin erstreckt, vermindert die im Bereich des Bondabschnittes wirksame Schubspannung, was zu einer verbesserten Zuverlässigkeit der Bondverbindung zwischen Dickdraht und Substrat führt. Es wird die Wahrscheinlichkeit für Ermüdungsrisse gemindert. Die Stromtragfähigkeit bleibt im Bereich des Bondabschnitts erhalten. Die im Bereich des Verjüngungsabschnitts gezielt geänderte Geometrie gewährleistet jedoch, dass eine größere Beständigkeit für die Bondverbindung erreicht ist. The invention encompasses the idea of a thick-wire bonding arrangement comprising a substrate, a thick wire and a high-current thick-wire bond in which an end-side bonding portion of the thick wire, which extends to the wire end of the thick wire, is bonded to the substrate, such that in the region of Bonding portion is formed a bonding contact between the thick wire and the substrate, wherein the thick wire has a taper portion which adjoins the wire end and in which the wire cross-section tapers towards the wire end. According to another aspect of the invention, there is provided a method of making a thick-wire bond assembly, the method comprising the steps of: providing a substrate, providing a thick wire, and forming a high-current thick-wire bond by forming an end-bond portion of the thick wire that extends to the wire end of the thick wire, is bonded to the substrate, such that in the region of the bonding portion, a bonding contact between the thick wire and the substrate is formed, wherein the thick wire is formed with a tapered portion which adjoins the wire end and in which the wire cross-section tapered towards the end of the wire. The provision of the taper section, which extends in the bonding section of the thick wire to the wire end, reduces the shear stress effective in the area of the bonding section, resulting in improved reliability of the bond connection between Thick wire and substrate leads. It reduces the likelihood of fatigue cracks. The current carrying capacity remains in the area of the bonding section. The specifically modified geometry in the area of the tapering section, however, ensures that a greater resistance to the bond connection is achieved.
Das Substrat kann wahlweise mit einer Oberflächenbeschichtung versehen sein, beispielsweise einer Metallisierung. In diesem Fall wird der Dickdraht auf die Metallisierung gebondet. Optionally, the substrate may be provided with a surface coating, such as a metallization. In this case, the thick wire is bonded to the metallization.
Die im Bereich des Bondkontaktes zwischen Dickdraht und Substrat gebildete Berührungsflä- che wird auch als Landefläche bezeichnet. The contact surface formed in the region of the bonding contact between the thick wire and the substrate is also referred to as the landing surface.
Bevorzugt geht der Verjüngungsabschnitt in einer Ausführungsform von einem Bereich voller Materialstärke des Dickdrahtes aus. Die Verjüngung des Drahtquerschnitts erfolgt vom Beginn des Verjüngungsabschnitts ausgehend bevorzugt durchgehend, wobei die Verjüngung hierbei zum Drahtende hin gleichmäßig oder ungleichmäßig erfolgen kann. Eine gleichmäßige Verjüngung ist insbesondere dann gegeben, wenn der Grad der Abnahme des Drahtquerschnitts pro Längenabschnitt über den gesamten Verjüngungsabschnitt gleich ist. Eine ungleichmäßige Verjüngung bedeutet dann, dass dieses für wenigstens einen Teilabschnitt gerade nicht der Fall ist. In one embodiment, the tapering section preferably proceeds from a region of full thickness of the thick wire. The tapering of the wire cross-section is preferably carried out continuously from the beginning of the tapering section, whereby the tapering can take place uniformly or unevenly towards the end of the wire. A uniform taper is particularly given when the degree of decrease of the wire cross section per length over the entire taper section is the same. An uneven taper then means that this is not the case for at least one section.
Eine bevorzugte Weiterbildung der Erfindung sieht vor, dass der Bondkontakt zwischen dem Dickdraht und dem Substrat im Bereich des Bondabschnitts durchgehend gebildet ist. Dieses bedeutet, dass eine durchgehende Berührungsfläche (Landefläche) im Bereich des Bondabschnitts zwischen Substrat und Dickdraht gebildet ist. Der Bondkontakt erstreckt sich dann insbesondere bis zum Drahtende hin. A preferred embodiment of the invention provides that the bonding contact between the thick wire and the substrate in the region of the bonding portion is formed continuously. This means that a continuous contact surface (landing surface) is formed in the region of the bonding portion between the substrate and the thick wire. The bonding contact then extends in particular to the wire end.
Bei einer zweckmäßigen Ausgestaltung der Erfindung kann vorgesehen sein, dass der Verjüngungsabschnitt mehrstufig ausgeführt ist, wobei Verjüngungsteilabschnitte mit unterschiedlichem Verjüngungsgrad gebildet sind. Diese Ausführungsform entspricht einer un- gleichmäßigen Verjüngung im Bereich des Verjüngungsabschnitts. Unterschiedliche Verjüngungsgrade entsprechen beispielsweise steileren und flacheren Schrägen, die zum Drahtende hin mit unterschiedlicher Neigung abfallen. Alternativ kann die Verjüngung im Bereich des Verjüngungsabschnitts durchgehend gleichmäßig ausgebildet sein. In an expedient embodiment of the invention can be provided that the tapering section is designed in several stages, wherein tapered sections are formed with different degrees of taper. This embodiment corresponds to an uneven taper in the region of the tapering section. Different degrees of taper, for example, correspond to steeper and shallower slopes, to the wire end fall off with different inclination. Alternatively, the taper in the region of the tapering section may be uniform throughout.
Eine vorteilhafte Ausführungsform der Erfindung sieht vor, dass der Drahtquerschnitt in dem Verjüngungsabschnitt sich wenigstens zweiseitig verjüngend gebildet ist. Bei dieser Ausführungsform nimmt der Drahtquerschnitt des Dickdrahtes auf mehreren Seiten ab. Auch eine allseitige Abnahme des Drahtquerschnitts im Bereich des Verjüngungsabschnitts kann vorgesehen sein, mit Ausnahme des Oberflächenabschnitts des Dickdrahtes, welcher in den Bondkontakt einbezogen ist. An advantageous embodiment of the invention provides that the wire cross-section is formed in the tapering section at least two sides tapered. In this embodiment, the wire cross section of the thick wire decreases on several sides. An all-round decrease of the wire cross section in the area of the tapering section can also be provided, with the exception of the surface section of the thick wire which is included in the bonding contact.
Bevorzugt sieht eine Fortbildung der Erfindung vor, dass der Verjüngungsabschnitt mit einer von einer Dickdrahtseite abfallenden, im Wesentlichen ebenen Seitenfläche ausgeführt ist. Beispielsweise ist die abfallende Seitenfläche als Deckfläche auf der Dickdrahtoberseite hergestellt. Eine solche Verjüngung kann beispielsweise mittels mechanischer Bearbeitung mit einem Stempel hergestellt werden, der von oben auf den Endabschnitt des Dickdrahtes einwirkt. Preferably, a further development of the invention provides that the tapering section is designed with a substantially flat side surface sloping down from a thick wire side. For example, the sloping side surface is made as a top surface on the thick wire top. Such a taper can be produced, for example, by means of mechanical machining with a punch, which acts from above on the end section of the thick wire.
Bei einer vorteilhaften Ausgestaltung der Erfindung kann vorgesehen sein, dass der Verjüngungsabschnitt am Drahtende zu einem verbleibenden Stirnflächensockel hin ausläuft. Bei dieser Ausführungsform bleibt im Bereich des Drahtendes trotz der Verjüngung im Bereich des Verjüngungsabschnitts bestehen. Alternativ hierzu kann vorgesehen sein, dass sich die Verjüngung zu einer Drahtspitze hin auslaufend erstreckt. Verbleibt der Stirnflächensockelab- schnitt, so weist dieser ausgehend von der Substratebene vorzugsweise eine Höhe zwischen etwa 20 und etwa 40%, weiter bevorzugt zwischen etwa 20% und etwa 30%> der Drahtdicke auf. In an advantageous embodiment of the invention can be provided that the tapering section terminates at the wire end to a remaining end face socket. In this embodiment, in the region of the wire end, despite the taper, it remains in the region of the tapering section. Alternatively, it can be provided that the taper extends expiring towards a wire tip. Remains the Stirnflächensockelab- section, it has, starting from the substrate plane preferably a height between about 20 and about 40%, more preferably between about 20% and about 30%> the wire thickness.
Eine Weiterbildung der Erfindung kann vorsehen, dass der Verjüngungsabschnitt mit einer gekerbten Verjüngung gebildet ist. Bei dieser Ausführungsform kann vorgesehen sein, dass im Bereich des Verjüngungsabschnitts von der Drahtoberseite, also der Seite, die vom Sub- strat abgewandt ist, Kerben eingearbeitet sind, deren Tiefe zum Drahtende hin zunimmt, so dass eine Art effektive Verjüngung des Drahtquerschnitts gebildet ist. Bei dieser oder anderen Ausgestaltungen verlaufen die Kerben im Wesentlichen senkrecht oder schräg zum Dickdraht im Bereich des Bondabschnittes. Dies entspricht dann einer im Wesentlichen senkrechten oder einer schrägen Ausbildung in Bezug auf die dem Dickdraht zugewandten Oberfläche des Substrates. Der Winkel zwischen der Kerbenlängsrichtung und der Drahtlängsrichtung kann zwischen 0 und 180 Grad betragen. A development of the invention can provide that the tapering section is formed with a notched taper. In this embodiment it can be provided that in the region of the tapering section of the wire top, so the side facing away from the substrate, notches are incorporated, the depth increases toward the wire end, so that a kind of effective taper of the wire cross section is formed. In this or other embodiments, the notches are substantially perpendicular or oblique to the thick wire in the area of the bond section. This then corresponds to a substantially vertical or oblique formation with respect to the thick wire-facing surface of the substrate. The angle between the notch longitudinal direction and the wire longitudinal direction may be between 0 and 180 degrees.
Eine bevorzugte Weiterbildung der Erfindung sieht vor, dass sich der Verjüngungsabschnitt drahtendseitig über einen Bereich von etwa 60% bis etwa 70%> der Länge des Bondabschnitts erstreckt. Der Verjüngungsabschnitt erstreckt sich in dieser Länge von dem Drahtende ausgehend. A preferred development of the invention provides that the tapering section extends over a range of about 60% to about 70% of the length of the bonding section on the wire end side. The taper portion extends in this length from the wire end.
Bei einer zweckmäßigen Ausgestaltung der Erfindung kann vorgesehen sein, dass sich der Bondabschnitt über eine Länge erstreckt, die einem Wert von etwa 10% bis etwa 20% der Dicke des Dickdrahtes entspricht. In Verbindung mit dem Verfahren zum Herstellen einer Dickdraht-Bondanordnung gelten die im Zusammenhang mit vorteilhaften Ausgestaltungen der Dickdraht-Bondanordnung vorangehend gemachten Erläuterungen entsprechend. Es kann in einer Ausgestaltung vorgesehen sein, dass der Verjüngungsabschnitt mit seiner sich verjüngenden Geometrie vor dem Bonden des Bondabschnitts auf das Substrat ausgebildet wird. Alternativ kann die Ausbildung des Verjüngungsabschnitts auch nach dem Bonden erfolgen. Auch kann vorgesehen sein, dass der Verjüngungsabschnitt im Verlauf des Bondens des Bondabschnitts auf das Substrat ausgebildet wird. In an expedient embodiment of the invention it can be provided that the bonding portion extends over a length which corresponds to a value of about 10% to about 20% of the thickness of the thick wire. In conjunction with the method for producing a thick-wire bonding arrangement, the explanations given above in connection with advantageous embodiments of the thick-wire bonding arrangement apply correspondingly. It may be provided in one embodiment that the tapering portion is formed with its tapered geometry prior to bonding of the bonding portion to the substrate. Alternatively, the formation of the rejuvenation section can also take place after the bonding. It can also be provided that the tapering section is formed in the course of the bonding of the bonding section to the substrate.
Das Herstellen des Verjüngungsabschnitts kann auf verschiedene Art und Weise erfolgen, beispielsweise mittels Schleifen, Lasern und / oder Schneiden. Der entsprechende Arbeitsschritt kann ohne weiteres in die als solche bekannten Prozesse des Dickdraht-Bondens integriert werden. In einer Ausgestaltung kann vorgesehen sein, den Verjüngungsabschnitt herzustellen, indem ein Bondwerkzeug mit verändertem Schneidwinkel eingesetzt wird, welches ansonsten üblicherweise im Wesentlichen rechtwinklig zum gebondeten Draht wirkt. Beschreibung bevorzugter Ausführungsbeispiele der Erfindung The production of the tapering section can take place in various ways, for example by means of grinding, lasering and / or cutting. The corresponding step can be readily integrated into the known as such processes of thick wire bonding. In one embodiment, it may be provided to produce the tapered section by using a bonding tool with a modified cutting angle, which otherwise usually acts substantially perpendicular to the bonded wire. Description of preferred embodiments of the invention
Die Erfindung wird im Folgenden anhand von bevorzugten Ausführungsbeispielen unter Bezugnahme auf Figuren einer Zeichnung näher erläutert. Hierbei zeigen: The invention will be explained in more detail below with reference to preferred embodiments with reference to figures of a drawing. Hereby show:
Fig. 1 eine schematische Darstellung einer Dickdraht-Bondanordnung, bei der ein endseiti- ger Bondabschnitt eines Dickdrahtes auf ein Substrat gebondet ist, und 1 shows a schematic illustration of a thick-wire bonding arrangement, in which an end-side bonding section of a thick wire is bonded to a substrate, and
Fig. 2 eine schematische Darstellung einer weiteren Dickdraht-Bondanordnung, bei der ein endseitiger Bondabschnitt eines Dickdrahtes auf ein Substrat gebondet ist, wobei in dem Bondabschnitt endseitig Kerben gebildet sind. 2 shows a schematic illustration of a further thick-wire bonding arrangement, in which an end-side bonding section of a thick wire is bonded to a substrate, notches being formed in the bonding section at the end.
Fig. 1 zeigt eine schematische Darstellung einer Dickdraht-Bondandordnung mit einem Dickdraht 1 und einem Substrat 2, bei dem es sich in dem dargestellten Ausführungsbeispiel um ein mit einer Metallisierung 3 versehenes Halbleitersubstrat handelt, beispielsweise ein Siliziumsubstrat. Ein Bondabschnitt 4 des Dickdrahtes 1 mit der Länge a liegt auf dem Substrat 2 auf. Der Dickdraht 1 verfügt über einen Drahtquerschnitt (Drahtdicke) d, wobei d etwa 100 μι Μβ etwa 500 μιη beträgt. Der Bondabschnitt 4 ist auf das Substrat 2 gebondet, so dass ein Bondkontakt 5 (Landefläche) gebildet ist. Bei dem Dickdraht 1 handelt es sich beispielsweise um einen Dickdraht aus Aluminium. An dem Bondabschnitt 4 ist endseitig ein Verjüngungsabschnitt 6 mit einer Länge c gebildet, in welchem der Drahtquerschnitt des Dickdrahtes 1 bei dem dargestellten Ausführungsbeispiel durchgehend und gleichmäßig zum Drahtende 7 hin abnimmt, wobei am Drahtende 7 ein Stirnflächensockel 8 vorgesehen ist, welcher sich von der Oberfläche der Metallisierung 3 aus erhebt. Von der Verjüngung ausgenommen ist wenigstens der Oberflächenbereich des Dick- drahtes 1, welcher im Bereich des Bondkontaktes 5 liegt. Fig. 1 shows a schematic representation of a thick-wire bond order with a thick wire 1 and a substrate 2, which is in the illustrated embodiment, a provided with a metallization 3 semiconductor substrate, for example, a silicon substrate. A bonding section 4 of the thick wire 1 with the length a rests on the substrate 2. The thick wire 1 has a wire cross section (wire thickness) d, where d is about 100 μι Μβ about 500 μιη. The bonding portion 4 is bonded to the substrate 2, so that a bonding contact 5 (land area) is formed. The thick wire 1 is, for example, a thick wire of aluminum. At the bonding portion 4 a tapered portion 6 is formed with a length c in the end, in which the wire cross-section of the thick wire 1 in the illustrated embodiment continuously and uniformly decreases towards the wire end 7, wherein at the wire end 7 an end face socket 8 is provided, which extends from the surface the metallization 3 rises from. At least the surface area of the thick wire 1, which lies in the region of the bonding contact 5, is excluded from the taper.
Fig. 2 zeigt eine schematische Darstellung einer weiteren Dickdraht-Bondanordnung. Für gleiche Merkmale werden in Fig. 2 die gleichen Bezugszeichen wie in Fig. 1 verwendet. Im Bereich des Verjüngungsabschnitts 6 weist der Dickdraht 1 bei der weiteren Dickdraht- Bondanordnung gemäß Fig. 2 Kerben 9 auf, deren Tiefe zum Drahtende 7 hin kontinuierlich und gleichmäßig zunimmt. Bei der Herstellung der in den Fig. 1 und 2 gezeigten Dickdraht-Bondanordnungen kann die Ausbildung der geometrischen Form im Bereich des Verjüngungsabschnitts 6 vor, nach und / oder während des Dickdraht-Bondens ausgeführt werden. So kann auch vorgesehen sein, die Verjüngung teilweise vor dem Drahtbonden herzustellen, um nach dem Drahtbonden die Verjüngung nachzubearbeiten oder weiter auszubilden. Hierzu können jeweils verschiedene Bearbeitungsverfahren wie Schleifen, Lasern oder Schneiden genutzt werden. Fig. 2 shows a schematic representation of another thick-wire bonding arrangement. For the same features, the same reference numerals as in Fig. 1 are used in Fig. 2. In the region of the tapering section 6, the thick wire 1 in the further thick-wire bonding arrangement according to FIG. 2 has notches 9 whose depth increases continuously and uniformly towards the wire end 7. In the manufacture of the thick-wire bonding arrangements shown in FIGS. 1 and 2, the formation of the geometric shape in the region of the tapering section 6 can be carried out before, after and / or during the thick-wire bonding. Thus, it may also be provided to partially produce the taper prior to wire bonding in order to rework or further develop the taper after wire bonding. For this purpose, different processing methods such as grinding, laser cutting or cutting can be used.

Claims
Ansprüche Expectations
Dickdraht-Bondanordnung, mit: Thick wire bonding arrangement, with:
- einem Substrat (2), - a substrate (2),
- einem Dickdraht (1) und - a thick wire (1) and
- einer Hochstrom-Dickdrahtbondverbindung, bei der ein endseitiger Bondabschnitt (4) des Dickdrahtes (1), welcher sich zum Drahtende (7) des Dickdrahtes (1) hin erstreckt, auf das Substrat (2) gebondet ist, derart, dass im Bereich des Bondabschnitts - a high-current thick wire bonding connection, in which an end bonding section (4) of the thick wire (1), which extends towards the wire end (7) of the thick wire (1), is bonded to the substrate (2) in such a way that in the area of bond section
(4) ein Bondkontakt (5) zwischen dem Dickdraht (1) und dem Substrat (2) gebildet ist, wobei der Dickdraht (1) einen Verjüngungsabschnitt (6) aufweist, welcher sich an das Drahtende (7) anschließt und in welchem sich der Drahtquerschnitt zum Drahtende (7) hin verjüngt. (4) a bonding contact (5) is formed between the thick wire (1) and the substrate (2), the thick wire (1) having a tapered section (6) which adjoins the wire end (7) and in which the Wire cross section tapers towards the wire end (7).
Anordnung nach Anspruch 1 , dadurch gekennzeichnet, dass der Bondkontakt Arrangement according to claim 1, characterized in that the bonding contact
(5) zwischen dem Dickdraht (1) und dem Substrat (2) im Bereich des Bondabschnitts (4) durchgehend gebildet ist. (5) is formed continuously between the thick wire (1) and the substrate (2) in the area of the bonding section (4).
Anordnung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der Verjüngungsabschnitt (6) mehrstufig ausgeführt ist, wobei Verjüngungsteilabschnitte mit unterschiedlichem Verjüngungsgrad gebildet sind. Arrangement according to claim 1 or 2, characterized in that the tapering section (6) is designed in multiple stages, with tapering subsections being formed with different degrees of tapering.
Anordnung nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass der Drahtquerschnitt in dem Verjüngungsabschnitt (6) sich wenigstens zweiseitig verjüngend gebildet ist. Arrangement according to at least one of the preceding claims, characterized in that the wire cross section in the tapered section (6) is formed to taper at least on two sides.
Anordnung nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass der Verjüngungsabschnitt (6) mit einer von einer Dickdrahtseite abfallenden, im Wesentlichen ebenen Seitenfläche ausgeführt ist. Arrangement according to at least one of the preceding claims, characterized in that the tapered section (6) is designed with a substantially flat side surface sloping from a thick wire side.
Anordnung nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass der Verjüngungsabschnitt Arrangement according to at least one of the preceding claims, characterized in that the tapering section
(6) am Drahtende (7) zu einem verbleibenden Stirnflächensockel (8) hin ausläuft. (6) at the wire end (7) runs out to a remaining end face base (8).
7. Anordnung nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass der Verjüngungsabschnitt (6) mit einer gekerbten Verjüngung gebildet ist. 7. Arrangement according to at least one of the preceding claims, characterized in that the taper section (6) is formed with a notched taper.
8. Anordnung nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass sich der Verjüngungsabschnitt (6) drahtendseitig über einen Bereich von etwa 60% bis etwa 70% der Länge des Bondabschnitts (4) erstreckt. 8. Arrangement according to at least one of the preceding claims, characterized in that the tapered section (6) extends on the wire end side over a range of approximately 60% to approximately 70% of the length of the bonding section (4).
9. Anordnung nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass sich der Bondabschnitt (6) über eine Länge erstreckt, die einem Wert von etwa 10%> bis etwa 20%> der Dicke des Dickdrahtes (1) entspricht. 9. Arrangement according to at least one of the preceding claims, characterized in that the bonding section (6) extends over a length which corresponds to a value of approximately 10% to approximately 20% of the thickness of the thick wire (1).
10. Verfahren zum Herstellen einer Dickdraht-Bondanordnung, wobei das Verfahren die folgenden Schritte umfasst: 10. A method of making a thick wire bond assembly, the method comprising the following steps:
- Bereitstellen eines Substrats (2), - providing a substrate (2),
- Bereitstellen eines Dickdrahtes (1) und - Providing a thick wire (1) and
- Ausbilden einer Hochstrom-Dickdrahtbondverbindung, indem ein endseitiger Bondabschnitt (4) des Dickdrahtes (1), welcher sich zum Drahtende (7) des Dickdrahtes (1) hin erstreckt, auf das Substrat (2) gebondet wird, derart, dass im Bereich des Bondabschnitts (4) ein Bondkontakt (5) zwischen dem Dickdraht (1) und dem Substrat (2) gebildet wird, - Forming a high-current thick wire bonding connection by bonding an end bonding section (4) of the thick wire (1), which extends towards the wire end (7) of the thick wire (1), to the substrate (2) in such a way that in the area of Bonding section (4) a bonding contact (5) is formed between the thick wire (1) and the substrate (2),
wobei der Dickdraht (1) mit einem Verjüngungsabschnitt (6) gebildet wird, welcher sich an das Drahtende (7) anschließt und in welchem sich der Drahtquerschnitt zum Drahtende (7) hin verjüngt. wherein the thick wire (1) is formed with a tapered section (6) which adjoins the wire end (7) and in which the wire cross section tapers towards the wire end (7).
11. Verfahren nach Anspruch 10, dadurch gekennzeichnet, dass der Verjüngungsabschnitt (6) vor dem Bonden des Bondabschnittes (4) auf das Substrat (2) ausgebildet wird. 11. The method according to claim 10, characterized in that the tapered section (6) is formed before bonding the bonding section (4) to the substrate (2).
12. Verfahren nach Anspruch 10, dadurch gekennzeichnet, dass der Verjüngungsabschnitt im Verlauf des Bondens des Bondabschnittes (4) auf das Substrat (2) ausgebildet wird. 12. The method according to claim 10, characterized in that the tapered section is formed in the course of bonding the bonding section (4) to the substrate (2).
EP11810567.5A 2010-10-12 2011-09-07 Thick-wire bond arrangement and method for producing Withdrawn EP2628178A2 (en)

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DE102010038130A DE102010038130B4 (en) 2010-10-12 2010-10-12 Thick wire bonding assembly and method of manufacture
PCT/DE2011/075214 WO2012062300A2 (en) 2010-10-12 2011-09-07 Thick-wire bond arrangement and method for producing

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US20130220673A1 (en) 2013-08-29
WO2012062300A3 (en) 2012-07-12
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US9992861B2 (en) 2018-06-05
DE102010038130A1 (en) 2012-04-12

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