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  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
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  • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
  • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
  • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
  • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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  • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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  • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L29/41725—Source or drain electrodes for field effect devices
  • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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  • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L29/42312—Gate electrodes for field effect devices
  • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
  • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
  • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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  • H01L29/45—Ohmic electrodes
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  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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  • H01L29/45—Ohmic electrodes
  • H01L29/456—Ohmic electrodes on silicon
  • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
  • H01L29/66409—Unipolar field-effect transistors
  • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
  • H01L29/66568—Lateral single gate silicon transistors
  • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
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  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
  • H01L29/66409—Unipolar field-effect transistors
  • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
  • H01L29/66742—Thin film unipolar transistors
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  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
  • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
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  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
  • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
  • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure

Definitions

• the invention relates to the field of field effect transistors. Such transistors are commonly used in microelectronics to form logic or electronic components. STATE OF THE PRIOR ART
• the transistors are dedicated, by the evolution of the needs of the users, to be improved in order to have more important performances.
• a transistor formed in a semiconductor substrate comprises, on the surface of the substrate, a gate.
• the grid covers, without electrical contact, a space, said channel region, located between a source and a drain present in the substrate.
• a source electrode is in contact with the source and a drain electrode is in contact with the drain.
• the semiconductor substrate is doped in a first type of doping with a first dopant density.
• the source and the drain are formed by regions of the semiconductor substrate doped with dopant densities much higher than the first dopant density.
• the source and the drain have a doping type that is opposite to the first type of doping.
• the channel region is doped according to the first type of doping at the first dopant density. It is called a channel region because this region serves to form a conductive zone, called a channel, between the source and the drain when a given gate voltage is applied between the gate and the substrate.
• the source and the drain are spaced apart by a distance commonly referred to as gate width.
• the grid has, in addition, a given length, measured in a plane of the surface of the substrate, in a direction substantially perpendicular to the gate width.
• the channel electrically connects the source and the drain. There can then be a carrier flow between the source electrode and the drain electrode.
• a so-called Schottky barrier is normally formed at an electrical contact between a metal electrode and a semiconductor material.
• the Schottky barrier limits a carrier's ability to move between the electrode and the semiconductor material.
• one of the important characteristics of a transistor is to allow efficient carrier injection.
• the source and the drain are formed by high doping regions inserted in the semiconductor material of the substrate. Doping makes it possible to increase the amount of charge carriers in the semiconductor material, to eliminate the Schottky barrier and to reduce the contact resistance between the source and drain electrodes and the highly doped regions. corresponding. It is therefore used a source and a heavily doped drain and a less heavily doped channel region present between the source and the drain. There are then respectively weak Schottky barriers between the source electrode and the source, between the drain electrode and the drain and between the drain or the source and the channel region. It can thus be obtained weak Schottky barriers, of the order of a few kiloohms to a few tens of kiloohms. This is generally acceptable for transistors in microelectronics or nanoelectronics technology.
• the gate widths of the transistors are reduced compared to a previous technological generation.
• a shorter gate width induces a lower switching time.
• the substrate has a mean dopant density representative of a number of dopants per unit volume. Dopants are distributed in the substrate statistically and not strictly homogeneously. When the length and width of the gate are reduced to a few tens of nanometers, the average density is no longer representative of the number of dopants included in a given channel region. If the substrate is cut into several studied volumes, there will be a given standard deviation for the density of dopant in said volumes, relative to the average density. The smaller the volumes studied, the greater the standard deviation, some of the volumes will have dopant density higher than the average density and other volumes will have a dopant density lower than said average density.
• the standard deviation can be such that at least one volume of substrate has a dopant density 2 times, 5 times, 10 times greater than another volume of the substrate, or even more .
• the volume is at the average dopant density
• the channel regions have dimensions close to those of the small volumes described above. Then, the standard deviation of the density of dopant atoms between the channel regions of neighboring transistors becomes large. Some channel regions may have much more dopant than other channel regions. It can then appear significant performance variations between channel regions of two neighboring transistors. This can in particular be checked for grid dimensions of the order a few nanometers or some 10 nm to 20 nm, that is to say a few tens of atoms.
• dopants when the gate has small dimensions, then induces performance variations from one transistor to another. This reduces a manufacturing repeatability of the transistors and decreases a reliability of said transistors.
• the source and the drain are generally formed by localized implantations of dopants and followed by diffusion of these dopants during annealing. This poses a second problem.
• the diffusion of the dopants in a single crystal is also a statistical phenomenon and the aforementioned influence of the small dimensions of the transistor on the standard deviation of the dopant density is found during this annealing. Thus, there is also an influence of the small dimensions of the grid.
• the channel regions have very small volumes. Evaluating a number of atoms in each channel region amounts to sampling the substrate by means of very small volumes.
• each dopant atom present in the channel region has a strong influence on the dopant density in said channel region. If, during annealing, some dopant atoms from the source or drain diffuse into the channel region of a transistor, they will strongly change the dopant density in said channel region.
• the channel region then has a density of dopant and charge carriers substantially increased relative to its initial dopant density.
• the use of dopants to form the source and the drain remains a step that can induce performance variations from one transistor to another. This can therefore reduce the manufacturing repeatability of the transistors and reduce their reliability.
• the anneals contribute to the diffusion of the dopants beyond an initial diffusion profile, the use of additional annealing is limited for any other step following that of diffusion of the dopants. If these anneals are not limited, there is a risk that dopants, present in the substrate to form the source and the drain, diffuse and bring the source and the drain closer together. Since such a mechanism is statistical, this diffusion is not homogeneous from one transistor to another. It can not be controlled easily. Some transistors then see their gate width reduced more than other neighboring transistors.
• the annealing necessary to spread dopants induce a high thermal budget. In this sense, they can be harmful for applications where structures already exist sensitive to the heat budget prior to the realization of the transistors.
• the object of the invention is to overcome the problems arising from a statistical presence of dopants in a transistor formed on a semiconductor substrate while maintaining a low contact resistance.
• the invention therefore relates firstly to a device with at least one transistor present on a substrate made of a first semiconductor material.
• Each transistor comprises a gate electrode, said gate, two conductive electrodes, said source electrode and drain electrode, an island made of a second semiconductor material and an insulating layer separating the gate of the two electrodes and the island.
• the island is embedded in the substrate, and defines a region capable of forming a channel, said channel region.
• the device according to the invention is characterized in that the channel region is inside the island and is in direct electrical contact with the two conductive electrodes.
• the electrodes there is no doped region such as source or drain between the electrode and the channel region formed by the island. An electron flow can be made from the electrode into the tunnel channel region.
• the channel region is in direct electrical contact on one side with one of the two conductive electrodes, said source electrode and, on the other hand, is in direct electrical contact with the other of the two conductive electrodes, called the drain electrode.
• the island makes it possible to form a transistor of small dimensions that does not require the use of heavily doped source and drain zones.
• the conductive electrodes are made of metal, of the aluminum or platinum type.
• the first semiconductor material is silicon and the second semiconductor material is Sii x Ge x , x being between 0 and 1.
• the combined use of aluminum and A Si x Ge x (SiGe) channel region allowed tunneling conduction between an electrode and the suitable channel region for a transistor.
• Other materials may however be used.
• Load carriers can also flow in SiGe with reasonable resistance without the need to impose a large grid voltage. Thus, if tunneling conduction occurs between one electrode and the channel region, and between the channel region and the other electrode, the carriers can flow from one electrode to the other.
• the channel region is included in a SiGe island, embedded in the surface of a silicon substrate.
• Charge carriers can not circulate freely, with low resistance, in silicon weakly doped or little doped without there being an artificial accumulation of carriers in silicon.
• Such an artificial accumulation is obtained in the state of the art by imposing a high voltage between the gate and the silicon substrate, which forms a conductive channel in the silicon.
• the channel is formed, even with a low gate voltage, in the SiGe island. Since there is no artificial accumulation of carriers in the silicon of the substrate, there is little or no carrier circulation from the islands to the silicon substrate. It thus makes it possible to substantially isolate the transistor of an island, the transistors of other neighboring islands. In particular, there is greater isolation between different transistors than if the substrate was entirely composed of the second semiconductor material, here SiGe.
• the island may have a height measured in a direction perpendicular to a main surface of the substrate, between 1 nm and 60 nm. It is also possible to form an island with a mean diameter, or a width, measured in a plane substantially parallel to a main surface of the substrate, of between 10 nm and 400 nm. The islands thus formed are small. Since the channel region is limited to the island, the channel regions present at the heart of the transistors are circumscribed to the island, thus limiting any possible leakage current.
• the substrate is advantageously of the semiconductor on insulator type, here silicon on insulator (SOI). This allows both to have a layer superficial of very good quality and further reduce leakage currents, which is known to those skilled in the art.
• SOI silicon on insulator
• a device according to the invention may comprise several transistors. Then it may be advantageous to have a trench present in the substrate to electrically isolate at least two neighboring transistors. This trench may be filled with insulating material, for example SiO 2. It can completely surround each transistor. Finally, the trench can extend in depth, if the substrate is in SOI with a buried insulating layer, to said buried insulating layer.
• the substrate supporting the transistors is an upper layer of semiconductor material present on a flexible substrate.
• Said upper layer may have a thickness less than or equal to about 10 nm or 5 nm or 3 nm or 2 nm.
• the invention also relates to a method of manufacturing a device with at least one transistor according to the invention.
• Such a method comprises at least the following successive steps:
• the formation of the second electrode can take place simultaneously with the step of forming the first electrode.
• the second electrode is then preferably in direct electrical contact with the island.
• Step b) is advantageously preceded by a step of depositing a thin layer of monocrystalline silicon, called the care layer.
• the holes created in step a) inducing a given topology, the care layer lines the holes and creates a new surface having substantially the same topology as that created in step a).
• a care layer may have a thickness on the flanks of the holes created in step a) lower than the bottom of the holes, forming an attenuation of the initial topology of the holes.
• the hole forming step may include etching that creates interface defects at the surface of the hole. The care layer then masks these defects and makes it possible to obtain a new surface without defects.
• the stage (b) of formation of the islands may comprise a deposition of one or more germanium monolayers forming an island. silicon-germanium in each hole. Silicon-germanium islands are formed by concentration and agglomeration of the germanium monolayers in the holes. Simultaneously, silicon diffuses into said islands of germanium in formation and this makes it possible to form a Si x Ge x island in each hole.
• the deposition of germanium monolayers is followed by the deposition of a cap layer, advantageously made of monocrystalline silicon, covering the silicon-germanium islands. It is possible to form a trench between at least two neighboring transistors so as to partially isolate the two neighboring transistors, the trench being empty of solid material or filled with an insulating material.
• the substrate may be a surface layer of semiconductor material having the surface where the holes are dug, of a semiconductor-on-insulator type substrate, said SOI substrate. Said surface layer is separated from said SOI substrate and bonded to a polymer substrate of the so-called "flexible substrate” type, prior to steps a) or c) or after step f).
• FIG. 1 illustrates a device according to the invention with a single transistor
• FIG. 2 illustrates a device according to the invention with at least three transistors separated by trenches
• FIGS. 3A to 3F schematize a method according to the invention for producing islands
• FIGS. 4A to 4D illustrate details of the formation of an island according to the invention
• FIGS. 5A to 5C illustrate different island shapes, seen in section
• FIGS. 6A to 6D illustrate a method according to the invention making it possible to form a device according to the invention from an island
• FIGS. 7A to 7C illustrate various stages of formation of a floating substrate and its bonding on a flexible substrate
• FIGS. 8A and 8B illustrate the fabrication of transistors according to the invention and their bonding on a flexible substrate
• FIGS. 9A to 9C illustrate the bonding of a floating substrate to a flexible substrate and the fabrication of transistors according to the invention on said bonded floating substrate.
• the invention firstly relates to a transistor in which a source electrode and / or a drain electrode are in direct contact with a region of semiconductor material forming a channel between the source and the drain. According to the invention, this arrangement has a sufficiently low contact resistance to allow acceptable operation of said transistor.
• the invention deals with a device comprising such a transistor.
• the transistor will not be solitary, but it will be considered that it is included in a device according to the invention except when it will be specifically discussed an isolated transistor.
• the transistors When there is contact between a metal electrode and a semiconductor material, there is generally a very large access resistance due to the Schottky barrier, for example several mega-ohms. That is why the transistors are manufactured to have two zones intermediate between the source and drain electrodes and the channel region, respectively called “source” and “drain” and consist of regions of highly doped semiconductor material.
• the invention proposes to dispense with the source and the drain to avoid problems appearing in the production of doped areas of small dimensions and those reducing their performance as mentioned above.
• FIG. 1 A device according to the invention is illustrated in FIG. 1
• the device according to the invention is prepared on a substrate 1, which may preferably be a surface layer 1.1 of a substrate 11 of the "semiconductor on insulator” type or preferably of the "silicon on insulator” (SOI) type.
• Said substrate 1 has a main surface 10 including at least one transistor 20; the main surface 10 is made of a first semiconductor material, preferably silicon.
• An SOI type substrate comprises a surface layer 1.1 composed of the first semiconductor material, separated by a layer of insulating material 1.2 from a main substrate 1.3 of semiconductor material, giving a mechanical strength to the SOI substrate.
• the surface layer 1.1 preferably has a small thickness, for example less than about 100 nm or about 50 nm or less than 20 nm or close to 1 nm.
• the transistor 20 comprises an island 2 in a second type of semiconductor material, a source electrode 3 and a drain electrode 4.
• the island 2 is preferably embedded in the main surface 10 of the substrate 1.
• the island 2 is in direct electrical contact with an edge with at least the source electrode 3.
• the island 2 is also in direct electrical contact with the drain electrode 4.
• the island 2 is preferably SiGe.
• the electrodes 3 and 4 may be metallic and are preferably made of aluminum or another metal or metal alloy.
• the substrate 1 that is to say the surface layer 1.1 of the SOI type substrate 11, is silicon
• the islet 2 is SiGe
• the source electrode 3 and the drain electrode 4 are aluminum.
• Other materials may however be used to produce a transistor included in a device according to the invention as will be described later.
• the island 2 and the two aforementioned electrodes 3, 4 are separated from a gate electrode, called gate 5, by an insulating layer 6, electrically insulating, also called gate oxide.
• gate electrode a gate electrode
• electrically insulating also called gate oxide.
• the gate 5 extends opposite any point of the substrate 1 present between the source electrode 3 and the drain electrode 4 and in particular opposite any point of the island 2 present between the two electrodes 3, 4 This part of the island 2, between the two electrodes 3, 4, forms a channel region. For the sake of simplification, it will be considered in the remainder of the description that the entire island 2 forms the channel region.
• the channel of the transistor 20 is formed in the island 2 and not in the substrate 1. It is therefore not necessary to seek a particular doping in the substrate 1.
• the substrate 1, or the surface layer 1.1 if is used a substrate 11 of the SOI type can be devoid of doping. Such a lack of doping makes it possible to simplify the fabrication of the substrate 1. Moreover, no statistical effect due to the doping of the substrate 1 can influence the performance of the transistor 20 when small-sized transistors are produced.
• the island 2 is preferably located in a hole 7, defined in the main surface 10, which has the function to control its position on the substrate favoring the nucleation of the island.
• the epitaxially grown island 2 is embedded in the surface of the substrate and may be partially or completely contained in the hole. Its dimensions and shape are controlled by the growth parameters and not by the size of the hole.
• the island may have a width L and a length, in the hole 7, of between about 15 nm and about 100 nm, preferably between 15 nm and 40 nm. These two dimensions are measured substantially parallel to the main surface 10.
• the hole 7 may be circular.
• the island 2 is also circular in plan view, and has a diameter of between about 15 nm and about 100 nm, preferably between 15 nm and 40 nm.
• the hole 7 can be a trench.
• the trench is then filled with islands aligned, close to each other but where the majority is not in direct contact with the other islets.
• Hole 7 has a bottom located at a depth
• the island 2 may have a height h less than, equal to or greater than the depth P of the hole.
• the height h of the island 2 can vary between about 1 nm and about 60 nm.
• the island has a form factor, i.e., a ratio of its height h to its base diameter, or its base width L, in the range 0.05 to 0.3.
• the first semiconductor material is silicon
• the island 2 is preferably silicon-germanium (SiGe) or a Si x Ge i- x type material subsequently called SiGe.
• SiGe can be formed over a silicon substrate by means of epitaxial growth following the crystal lattice of silicon. It is therefore possible to form monocrystalline SiGe, at least locally, on a silicon substrate. This property of SiGe is important for carrying out the invention.
• the two electrodes 3, 4 are each separated from the SiGe island 2 by a potential barrier inducing a given access resistance.
• the potential barrier between the island 2 and the electrodes 3, 4 is easily crossed by carriers, electrons or holes, by tunnel effect.
• the transistor is then subjected to a relatively low access resistance, typically of the order of some 10 kilohms, but which can go up to a few kiloohms.
• the second semiconductor material forming the island 2 has a valence band whose peak has a given energy level.
• Each of the two electrodes 3, 4 has a Fermi level.
• the Fermi level of one of the two electrodes 3, 4 and the top of the valence band of the island 2 are aligned if the Fermi level of said electrode and the energy level of the vertex of the band valence have a negligible difference. This is true that the Fermi level of the electrode 3, 4 is greater than, less than or equal to the energy level of the valence band. If the vertex of the valence band of island 2 is aligned with the Fermi level of one of the two electrodes 3, 4, there can be tunneling conduction between island 2 and said electrode 3, 4.
• the Fermi level in one of the electrodes 3, 4 has a value lower than the energy level of the top of the valence band of the island 2, there can also be tunneling conduction from said electrode 3, 4 to the island 2.
• the top of the valence band of the island 2 has a lower energy level than the Fermi level in the other of the two electrodes 3, 4, there can be tunneling conduction from the island 2 towards the other of the two electrodes 3, 4.
• the energy level at the top of the valence band of island 2 is between the Fermi levels of electrodes 3 and 4 or is aligned with one of them, there may be carrier traffic between the electrode with the highest level of Fermi and the electrode with the lowest level of Fermi, through the island 2. If the carriers are electrons, they move from the highest level of Fermi to the lowest . If the carriers are holes, they move in the opposite direction.
• the Fermi levels in the source and drain electrodes are both higher or both are lower than the energy level of the valence band of the island, there is no traffic of carriers possible.
• the Fermi levels of the two electrodes 3, 4 are modifiable if a given bias voltage is imposed between said electrodes. Then, one of them will have its Fermi level decreasing while the other one will increase its Fermi level. In the presence of a bias voltage between the electrodes 3, 4, it is thus possible to achieve that the vertex of the valence band of the island 2 has a level between the Fermi levels of the two electrodes. However, in many situations, the potential difference used must be very important.
• island 2 is made of SiGe and the two electrodes 3, 4 are made of aluminum, not only is the potential barrier sufficiently narrow to allow a tunnel effect, but only a small polarization between the electrodes is required. 3, 4 to position the vertex of the valence band of the island 2 between the Fermi levels of the two electrodes 3, 4 or to align it with the Fermi level of at least one of the two electrodes 3, 4. We therefore need a low polarization to circulate carriers between the two electrodes 3, 4 through the island 2.
• GaAs with InGaAs islands - or a GeOI type substrate (germanium on insulator) with InAs or InGaAS islands are transported by the conduction band. There will then be tunneling conduction only if the bottom of the conduction band of the islands of InAs or InGaAs is positioned between the Fermi level of the electrodes 3, 4. In other words, such transistors would be transistors of type n whereas SiGe islands on a silicon substrate can be used for P-type transistors
• the island 2 may have different shapes, observable in a plane substantially perpendicular to the main surface 10, as will be described later in connection with the method.
• the access resistance of a transistor according to the invention is linked to a sufficiently weak "tunnel" resistance and not to a Schottky barrier, there is no need to form highly doped source and drain type regions. to obtain an acceptable access resistance. Neither is it necessary for the channel region to be doped. Island 2 is preferably undoped. Thus, during the manufacture of the island 2, it is not necessary to introduce a dopant, nor necessary to use annealing to cause said dopant to be diffused. Moreover, in a device composed of several transistors, there is no statistical variation between two transistors related to local variations of dopant density in the channel regions.
• the electrodes 3, 4 are preferably made of aluminum or another metal or metal alloy such as copper, titanium, tungsten, gold, platinum.
• the grid 5 may be of any material usually used in microelectronics and nanoelectronics to form gate electrodes.
• the grid 5 may be aluminum, copper, tungsten, platinum, polysilicon, etc.
• the grid 5 extends at least opposite any part of the island 2 between the two electrodes 3, 4.
• the grid 5 may be superimposed on a portion of the electrode of 3 and / or the drain electrode 4.
• the gate 5 is separated at any point of the two electrodes 3, 4 and the island 2 by the insulating layer 6. In this way, when a gate voltage is imposed on the grid 5, an electric field is produced at every point of the island 2, present between the two electrodes 3, 4.
• the electric field induces in the region of the island near the interface between the insulating layer 6 and the island 2, either a carrier enriched zone or a carrier depleted zone between the two electrodes 3, 4. If a zone enriched in carriers is formed, it is comparable to a conductive channel, of low resistance, between the two electrodes 3, 4. It can therefore easily be a carrier circulation. between the two electrodes.
• the transistor 20 is then in the on state.
• the carrier density also influences the energy level of the peak of the valence band of the island 2 and therefore the tunneling conduction between the electrodes 3, 4 and the island 2.
• the island 2 behaves like a major resistance located between the two electrodes 3, 4. no conduction possible between the two electrodes 3, 4.
• the transistor 20 is then in the off state.
• the island 2 When there is no potential difference imposed by the gate 5, the island 2 is comparable to a high value resistance separating the two electrodes. Then, as a function of a potential difference between the source electrode 3 and the drain electrode 4, a very small current can flow according to the aforementioned tunnel-effect conduction mechanism by moving carriers between each of these two electrodes and the channel region.
• the insulating layer 6 is advantageously an oxide layer, for example of silicon oxide, but may be in any other material used in microelectronics as the gate oxide of a transistor.
• the insulating layer 6 has a thickness and a permittivity such that there is no significant tunnel current between the gate 5 and any of the elements taken from the source electrode 3, the drain electrode 4 and the channel region formed in the island 2 between the two aforementioned electrodes.
• the insulating layer 6 is made of silicon oxide S10 2 , it may have a thickness of between a few nm and 15 nm, for example 8 nm or 10 nm.
• it may be HfC> 2 or AI 2 O 3 or any other known oxide of microelectronics.
• a high dielectric constant oxide for example greater than 5 or 10
• hafnium oxide HfO offers a better capacitive coupling between the grid 5 and the region of the channel formed in the island 2.
• Such an oxide can be deposited by various techniques, preferably by a technique known as atomic layer deposition (ALD), and may have a thickness of between a few nm and 15 nm, for example 6 nm.
• the invention also relates to a device comprising several transistors 20, 20 'similar to that of Figure 1. A particular embodiment of such a device is partially shown in section in Figure 2.
• Said substrate 1 is in this example a surface layer 1.1 of a substrate 11 of the SOI type or of the semiconductor on insulator type having a buried oxide layer 1.2 present under the surface layer 1.1.
• the two transistors 20, 20 ' can be separated from each other by a trench 21, dug in the surface layer 1.1.
• each transistor 20 is a transistor 20
• the trench 21 can pass entirely through the surface layer 1.1 of the substrate 11 of the SOI type.
• the trench 21 exposes the buried oxide layer 1.2.
• the trench 21 may be empty of solid material or may be filled with an insulating material, for example silicon oxide. Such a trench 21 makes it possible to electrically isolate a transistor 20 from any neighboring transistor 20 'and vice versa. It is thus possible to limit or eliminate any leakage current between the different transistors 20, 20 '. If there are more than two transistors 20, 20 ', they are preferably each separated from each other by at least one trench 21.
• the trench 21 may occupy a minimum volume, sufficient to separate the transistors 20, 20 ', but without occupying more volume than necessary.
• any part of the surface layer 1.1 which does not comprise an island 2, a source electrode 3 or a drain electrode 4 is removed and forms the trench 21. Any intermediate situation between the two aforementioned cases is possible. .
• the invention also relates to a method for manufacturing a transistor according to the invention or a device comprising one or more transistors according to the invention. Such a process is accomplished in two parts:
• FIGS. 3A to 3F A method for manufacturing islands of SiGe is described in FIGS. 3A to 3F.
• An SOI type substrate 11 is selected having a surface layer 1.1 present above a buried oxide layer 1.2.
• Layer 1.1 has a thickness chosen according to a desired application for future transistors.
• a layer of resin 8 ( Figure 3A).
• the lithography used may be a standard photolithography used in microelectronics, for example a photolithography specific to the formation of nanometric structures or an electron beam lithography known as lithography "e-beam” in English. Alternatively, it may be a nano-print lithography, known as "nano-imprint” in English.
• said holes have a depth of between about 5 nm and about 50 nm and a diameter, or at least a width L and / or a length, between about 15 nm and about 100 nm, preferably between about 15 nm and about 40 nm.
• the holes 7 can be positioned in a regular and homogeneous manner on the surface of the substrate 1 formed by the surface layer 1.1. They can be circular or polygonal. Alternatively they can form trenches, each extending where there are several transistors. In this case, it will be possible to form several transistors on the same set of SiGe.
• the substrate 1 having the holes 7 is subjected to a germanium atom beam 32 (FIG. 3E) under conditions allowing a molecular beam epitaxy of germanium monolayers.
• SiGe islands 2 are then formed by a mechanism known as the Stranski-Krastanov mechanism at a temperature between about 250 ° C and 800 ° C ( Figure 3F).
• the deposition of germanium atoms can be done by chemical vapor deposition or chemical vapor deposition deposited by plasma (in English: chemical vapor deposition: CVD or plasma enhanced chemical vapor deposition: PE-CVD).
• the germanium driven by a variation of surface tension at the holes 7, to minimize its energy, will preferentially settle in the holes 7.
• the germanium monolayers agglomerate in the holes 7 and this leads to a growth of islands of germanium 2 '.
• Silicon from the surface layer 1.1 diffuses into the islands of germanium 2 'during their formation and the result is a generation of islets 2 of SiGe. This diffusion takes place during the growth of islands of germanium 2 '.
• a monocrystalline silicon care layer 41 is deposited after formation of the holes 7 and before formation of the germanium islands 2 ', that is to say before formation islands 2 in Si x Ge x .
• Figure 4A shows in section a structure such as that shown in Figure 3B.
• An SOI-type substrate 11 is observed, comprising a surface layer 1.1 and a buried oxide layer 1.2.
• the surface layer 1.1 has a main surface 10 which is interrupted by at least one hole 7.
• a care layer 41 composed of the first semiconductor material, that is to say the material of the surface layer 1.1 of the SOI substrate 11, here silicon, is deposited on the main surface 10 and in the hole 7 ( Figure 4B).
• This care layer 41 lines the bottom, and the walls of the initial holes. It has a thickness e that can be between a few nanometers, one or two atomic monolayers, and several hundreds of nanometers in bottom of the initial holes.
• the reactive ion etching used to form the holes 7, hereinafter called initial holes generally produces defects at any point etched, here at the bottom of the initial holes 7.
• the care layer 41 is used to remove these defects.
• the upholstered hole 47 and the new downhole surface 43 do not reproduce the defects present at the bottom of the initial hole 7.
• the care layer 41 is deposited anisotropically. It then has a topology that roughly reproduces a surface topology of the substrate 1 and the initial hole 7.
• the thickness e of the care layer 41 is substantially identical above the main surface 10 and in the initial hole 7, that is, between the bottom of the initial hole 7 and the new surface of the downhole 43.
• the care layer 41 has a small thickness on the flanks of the initial hole 7 in proportion to the thickness e of the layer of care 41 above the main surface 10 or the bottom of the initial hole 7. In this way, the upholstered hole 47 substantially reproduces the topology and the aspect of shape of the initial hole 7.
• the care layer 41 is deposited preferably at low temperature, for example at a temperature between about 300 ° C and about 700 ° C.
• Island 2 of second material is then deposited in the upholstered hole 47 (FIG. 4C).
• the denomination "hole 7" will be indifferently relative to the initial holes 7 or to the upholstered holes 47 except when they will be mentioned explicitly as initial holes 7 or upholstered hole 47.
• SiGe islet formation is described in the document "Morphological evolution and lateral ordering of uniform SiGe / Si (001) islands” written by M Stoffel et al. and published in the journal Microelectronics Journal, No. 37 (2006) pages 1528 to 1531, in 2006.
• “experimental procedure” details a method of manufacturing islands of SiGe.
• a silicon care layer is established by silicon deposition between 480 ° C and 700 ° C or between 370 ° C and 500 ° C.
• germanium monolayers are deposited by molecular beam epitaxy at temperatures between about 620 ° C and 750 ° C. It is then cooled, for example at the rate of 1 ° C / s.
• the care layer used in the process described in this document is deposited substantially isotropically.
• the deposition of the germanium monolayers is carried out at temperatures of between approximately 250 ° C. and 800 ° C. and at a pressure close to ultra-high vacuum for a molecular beam epitaxy deposit or a few hectopascals for a chemical vapor deposition.
• the growth of the silicon care layer 41 may be preceded by a native oxide removal step that may be formed during or between some of the preceding steps.
• This step can include an RCA type cleaning (known in English under the term "RCA clean") in three stages, comprising oxidation in a basic medium, oxidation in an acid medium and deoxidation.
• this step may comprise cleaning in a hydrofluoric acid (HF) bath, and / or hydrogen desorption.
• HF hydrofluoric acid
• the islands 2 do not need to be doped to obtain functional transistors. However, those skilled in the art may wish to boost SiGe islands 2 without thereby violating the invention.
• a silicon layer layer 48 on the substrate 1 after formation of the germanium island 2. This can be obtained for example by molecular beam epitaxy.
• the hat layer 48 advantageously has a thickness of a few nanometers, for example between 1 nm and 50 nm, preferably between 2 and 5 nm. Island 2 of SiGe is then wrapped in silicon.
• the hat layer 48 it can be used a deposit at a temperature included between about 50 ° C and 600 ° C depending on the flatness expected for said cap layer.
• the islands 2 may have different shapes depending on the deposition conditions of the monolayers. Since the islet of germanium becomes Sii x Ge x by diffusion, its shape is more precisely related to the ratio of germanium and silicon in island 2 or, in other words, by its germanium content. It is further estimated that the shape of the hole 7 also influences the shape of the island 2.
• FIGS. 5A to 5C Different island shapes 2 are illustrated in FIGS. 5A to 5C.
• the substrate 1 comprises an island 2 made of SiGe in a hole 7 (FIG. 6A). Over the island 2 are formed two electrodes 3 and 4, a source electrode 3 and a drain electrode 4.
• the two electrodes 3, 4 are each in direct electrical contact with the island 2 and are not in contact with each other. electrical contact between them. They may be in any conductive material used in microelectronics, as mentioned above in the description of the transistor.
• the electrodes 3, 4 are made of aluminum. In the following description, and for the sake of simplicity, it will be considered that the two electrodes 3, 4 are aluminum although the invention relates to other types of conductive materials. In the example of FIG.
• the electrodes 3, 4 extend on the main surface 10 of the substrate 1 and on at least a portion of the flanks of the hole 7 and reach a portion of the island 2. However, the electrodes 3, 4 may be separated from the main surface 10 of the substrate 1 by a not shown insulating layer until said insulating layer electrically separates the electrodes 3, 4 of the island.
• the two electrodes 3, 4 can be produced by depositing aluminum through a resin mask obtained by lithography. Alternatively, they can be manufactured by depositing an aluminum layer on the surface of the substrate followed by etching aluminum at any point where it is not desirable to no electrodes.
• the two electrodes 3, 4 are each at least partially in electrical contact with the island 2; they may therefore have parts that are not directly situated above the island 2.
• One of the two electrodes 3, 4 may be located on the periphery of the island 2. However, alternatively, at least one of the two electrodes 3, 4 may cover a large portion of the island 2. In all cases, a distance L between the two electrodes 3, 4 will define a gate length of the transistor.
• the substrate 1, as well as the island 2 are subjected to HF cleaning. That is to say that the substrate 1 is soaked in a solution of hydrofluoric acid so as to remove any residual surface oxide that may be present on the surface of the island 2 and the substrate 1.
• an insulating layer 6 is deposited over the whole of the substrate 1 (FIG. 6B). It is therefore understood that the insulating layer 6 is deposited above the two electrodes 3, 4, over any surface of the island 2 not covered by the two electrodes 3, 4 and on the main surface 10 of the substrate 1.
• This insulating layer 6 is used to form a gate oxide for the transistor. It is preferably silicon oxide or hafnium, but may be any oxide used in microelectronics as gate oxide. Preferably, oxides which can be easily deposited by atomic monolayer deposition (ALD) will be selected. For example, it is It is possible to use oxides based on aluminum or zirconium.
• ALD atomic monolayer deposition
• the grid 5 can be any of the conductive materials commonly used in microelectronics. This can be in particular tungsten, aluminum or polysilicon.
• the grid 5 can be formed either by deposition of conductive material through a mask, or by the formation of a layer of conductive material followed by etching of said layer where you do not want to form a grid. It is ensured that any point of the island 2 located between the two electrodes 3, 4 is covered by the grid 5, separated therefrom by the insulating layer 6. It will also be ensured that the grid 5 either at any point separated from the two electrodes 3, 4 by the insulating layer 6.
• a transistor 20 is then formed.
• the insulating layer 6 can then be eliminated at any point of the substrate 1 except where the insulating layer 6 directly covers the island 2 and where the insulating layer 6 is directly covered by the grid 5.
• the insulating layer 6 can be present only above the island 2, covering it directly, or the insulating layer 6 can also completely cover the electrodes 3, 4 and be in line with any point of the island 2. Any variation between these two cases is also possible.
• the source electrode 3, the drain electrode 4 and the gate 5 are connected by electrical connections 61 to a not shown electronic circuit which may comprise other transistors. .
• two neighboring transistors 20 may be separated by trenches 21.
• the trenches can be obtained by creating a mask by lithography, said mask being open at any part of the surface layer 1.1 to be eliminated.
• the mask protects at least the transistors during the etching, possibly with a margin of safety. This step can be performed after formation of the grid or directly after formation of the electrodes 3, 4.
• the invention thus makes it possible to produce transistors, isolated or included in a device. These transistors have the advantage of not requiring any doping step during their manufacture. In addition, these transistors do not require dopant atoms to function. Thus, the problems which appear in the transistors of small dimensions known from the state of the art have a strongly reduced or even zero influence in the transistors according to the invention.
• a semiconductor-on-insulator (SOI) substrate 11 comprises an upper layer of semiconductor material 1.1, fixed to a lower layer 1.3, of greater thickness, by an oxide layer 1.2 (FIG. 7A). If there is such a substrate 11 having a top layer 1.1 of material high quality semiconductor, it is possible to obtain a floating substrate 74 from the upper layer 1.1 ( Figure 7B). It is indeed easy to release the upper layer 1.1 of the lower layer 1.3 by chemically etching the oxide layer connecting them to each other, for example using a hydrofluoric acid solution, HF.
• a flexible substrate may be a polymer substrate.
• flexible substrate is defined in the world of advanced microelectronics, a substrate that if it is placed on a non-flat support can roughly follow a topology of said support. It is a substrate that is neither globally crystalline nor an oxide or nitride. In general it is a polymer-based substrate. In the following, we will consider that a flexible substrate designates a polymer substrate without being limited to this case.
• the method according to the invention makes it possible to fabricate transistors 20, 20 'on very thin semi-conductor layers (FIG. 8A).
• substrates 11 of the SOI type whose upper layer 1.1 has a thickness of about
• holes in the substrate for example of a depth of about 1 nm or 2 nm and to deposit a care layer of a few nanometers thick. Then the islands 2 are formed in a localized way in the holes and there is no need to create a source or drain of several nanometers deep.
• the method according to the invention thus opens two possibilities.
• the first possibility is to manufacture the transistors 20, 20 'according to the invention on the substrate 11 of the SOI type (FIG. 8A), prior to the transfer of the upper layer 1.1 onto a flexible substrate 75 (FIG. 8B). It is therefore possible initially to use substrates 11 of the semiconductor-on-insulator type having a super thin semiconductor surface layer 1.1 which is detached from the SOI substrate 11 after the formation of transistors 20, 20 'and an interconnection network at above the transistors.
• a very thin floating substrate 74 having transistors is then obtained.
• the small thickness of the floating substrate 74 leads it to easily marry a shape of the flexible substrate 75 and possible deformations of said flexible substrate 75 and allows it to be easily bonded.
• the second possibility is to manufacture the transistors according to the invention after the transfer of the upper layer on said flexible substrate.
• a polymer-based adhesive 76 is generally used (FIG. 9A).
• Such a material is easily degraded at high temperature, separating the floating substrate 74 from the flexible substrate 75. It is therefore generally not possible to carry out manufacturing steps having a temperature greater than a critical temperature specific to the adhesive material 76.
• the anneals used to produce silicon technology transistors according to the state of the art have temperatures that are incompatible with said adhesives 76.
• a process according to the invention uses only steps at a temperature below about 180 ° C. Indeed, since there is no need to perform a dopant implantation or a diffusion annealing of said dopants, the steps having a large thermal budget are not necessary to manufacture transistors according to the invention. Thus, neither the glue 76 nor the flexible substrate 75 can deteriorate during the manufacture of the transistors.
• a method according to the invention will be used to produce silicon-based transistors 20, 20 'on islands 2 present above a flexible substrate 75 without damaging it (FIG. 9B).
• islands 2 will have been made preferably before the release of the top layer 1.1 SOI substrate 11 illustrated in Figure 7B.
• a floating substrate 74 having islands 2 according to the invention is then obtained (FIG. 9 C).
• transistors 20, 20 'according to the invention will be produced on a floating substrate 74 bonded to a flexible substrate 75.
• Interconnections may be obtained by atomic monolayer deposition or by any other type of compatible process that does not impose a temperature greater than the take-off temperature.

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