EP2568473A3 - Semiconductor devices including variable resistance elements and methods of writing said semiconductor devices - Google Patents

Semiconductor devices including variable resistance elements and methods of writing said semiconductor devices Download PDF

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Publication number
EP2568473A3
EP2568473A3 EP12178296.5A EP12178296A EP2568473A3 EP 2568473 A3 EP2568473 A3 EP 2568473A3 EP 12178296 A EP12178296 A EP 12178296A EP 2568473 A3 EP2568473 A3 EP 2568473A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor devices
variable resistance
writing
methods
resistance elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12178296.5A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2568473A2 (en
Inventor
Man Chang
Young-Bae Kim
Dong-Soo Lee
Chang-Bum Lee
Seung-Ryul Lee
Chang-Jung Kim
Myoung-Jae Lee
Kyung-Min Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP2568473A2 publication Critical patent/EP2568473A2/en
Publication of EP2568473A3 publication Critical patent/EP2568473A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0076—Write operation performed depending on read result
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5625—Self-converging multilevel programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
EP12178296.5A 2011-09-06 2012-07-27 Semiconductor devices including variable resistance elements and methods of writing said semiconductor devices Withdrawn EP2568473A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110090200A KR20130026803A (ko) 2011-09-06 2011-09-06 가변 저항 소자를 포함하는 반도체 장치 및 상기 반도체 장치의 동작 방법

Publications (2)

Publication Number Publication Date
EP2568473A2 EP2568473A2 (en) 2013-03-13
EP2568473A3 true EP2568473A3 (en) 2014-12-24

Family

ID=46679140

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12178296.5A Withdrawn EP2568473A3 (en) 2011-09-06 2012-07-27 Semiconductor devices including variable resistance elements and methods of writing said semiconductor devices

Country Status (4)

Country Link
US (1) US9001551B2 (ko)
EP (1) EP2568473A3 (ko)
KR (1) KR20130026803A (ko)
CN (1) CN102982842A (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102568582A (zh) * 2010-12-24 2012-07-11 三星电子株式会社 可变电阻器件、包括可变电阻器件的半导体器件及操作方法
KR20130021199A (ko) 2011-08-22 2013-03-05 삼성전자주식회사 비휘발성 메모리 소자 및 그 구동 방법
US8773888B2 (en) * 2011-08-22 2014-07-08 Samsung Electronics Co., Ltd. Method of operating semiconductor device including variable resistance device
US9230611B2 (en) * 2011-11-04 2016-01-05 Hewlett Packard Enterprise Development Lp Structure of a switching device in an array
KR102102175B1 (ko) 2013-11-05 2020-04-21 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치의 테스트 방법
US20150149517A1 (en) * 2013-11-25 2015-05-28 University Of The West Of England Logic device and method of performing a logical operation
JP6425137B2 (ja) * 2014-06-12 2018-11-21 パナソニックＩｐマネジメント株式会社 データ記録方法および不揮発性記憶装置
JP6457792B2 (ja) * 2014-11-19 2019-01-23 ルネサスエレクトロニクス株式会社 半導体記憶装置
EP3266023A4 (en) * 2015-05-29 2018-10-24 Hewlett Packard Enterprise Development LP Memristance feedback tuning
CN106328196B (zh) * 2015-07-01 2019-03-05 华邦电子股份有限公司 电阻式存储器装置的写入方法
CN105719691A (zh) * 2016-01-22 2016-06-29 清华大学 阻变存储器的操作方法及阻变存储器装置
FR3066308B1 (fr) 2017-05-09 2021-07-30 Commissariat Energie Atomique Procede de gestion de l'endurance d'une memoire reinscriptible non volatile et dispositif de programmation d'une telle memoire
FR3066309B1 (fr) 2017-05-09 2020-10-16 Commissariat Energie Atomique Procede de gestion de l'endurance d'une memoire reinscriptible non volatile et dispositif de programmation d'une telle memoire
KR102040103B1 (ko) * 2017-05-25 2019-11-05 한국화학연구원 가변 저항 메모리 장치 및 그것의 동작 방법
CN109147844B (zh) * 2017-06-19 2021-06-08 华邦电子股份有限公司 电阻式存储器及其电阻式存储单元的恢复电阻窗口方法
CN109308927B (zh) * 2017-07-28 2021-04-30 华邦电子股份有限公司 内存储存装置以及电阻式内存组件的形成方法
US10803939B2 (en) 2018-08-22 2020-10-13 Micron Technology, Inc. Techniques for programming a memory cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009051274A1 (en) * 2007-10-17 2009-04-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
WO2009142828A1 (en) * 2008-05-20 2009-11-26 Seagate Technology Llc Write verify method for resistive random access memory
EP2562763A2 (en) * 2011-08-22 2013-02-27 Samsung Electronics Co., Ltd. Method of operating semiconductor device including variable resistance device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100801082B1 (ko) 2006-11-29 2008-02-05 삼성전자주식회사 멀티 레벨 가변 저항 메모리 장치의 구동 방법 및 멀티레벨 가변 저항 메모리 장치
JP5060191B2 (ja) 2007-07-18 2012-10-31 株式会社東芝 抵抗変化メモリ装置のデータ書き込み方法
US7646632B2 (en) 2007-12-21 2010-01-12 Qimonda Ag Integrated circuit for setting a memory cell based on a reset current distribution
US8351251B2 (en) 2009-08-27 2013-01-08 International Business Machines Corporation Multilevel programming of phase change memory
KR20120103913A (ko) * 2011-03-11 2012-09-20 삼성전자주식회사 가변 저항 소자, 상기 가변 저항 소자를 포함하는 반도체 장치 및 상기 반도체 장치의 동작 방법
US8773888B2 (en) * 2011-08-22 2014-07-08 Samsung Electronics Co., Ltd. Method of operating semiconductor device including variable resistance device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009051274A1 (en) * 2007-10-17 2009-04-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
WO2009142828A1 (en) * 2008-05-20 2009-11-26 Seagate Technology Llc Write verify method for resistive random access memory
EP2562763A2 (en) * 2011-08-22 2013-02-27 Samsung Electronics Co., Ltd. Method of operating semiconductor device including variable resistance device

Also Published As

Publication number Publication date
KR20130026803A (ko) 2013-03-14
EP2568473A2 (en) 2013-03-13
US9001551B2 (en) 2015-04-07
US20130058153A1 (en) 2013-03-07
CN102982842A (zh) 2013-03-20

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