Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
  • C03C17/23—Oxides
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
  • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
  • C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
  • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
  • C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C4/00—Compositions for glass with special properties
  • C03C4/14—Compositions for glass with special properties for electro-conductive glass
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0224—Electrodes
  • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
  • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
  • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
  • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/90—Other aspects of coatings
  • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/10—Deposition methods
  • C03C2218/15—Deposition methods from the vapour phase
  • C03C2218/152—Deposition methods from the vapour phase by cvd
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/541—CuInSe2 material PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
  • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
  • Y10T428/2495—Thickness [relative or absolute]
  • Y10T428/24967—Absolute thicknesses specified
  • Y10T428/24975—No layer or component greater than 5 mils thick
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
  • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
  • Y10T428/264—Up to 3 mils
  • Y10T428/265—1 mil or less

Definitions

• the invention relates to a photovoltaic module front face substrate, in particular a transparent glass substrate, and to a photovoltaic module incorporating such a substrate.
• a photovoltaic material photovoltaic system that generates electrical energy under the effect of incident radiation is positioned between a back-face substrate and a front-face substrate, this front-face substrate being the first substrate which is traversed by the incident radiation before it reaches the photovoltaic material.
• photovoltaic materials means absorbing agents that can be composed, for example, of cadmium telluride, amorphous silicon, microcrystalline silicon or ternary chalcopyrites which generally contain copper, indium and selenium. These are so-called CISe absorber layers 2 . May also be added to gallium absorber agent layer (eg, Cu (In, Ga) Se 2 or CuGaSe 2), aluminum (eg, Cu (In, Al) Se 2), or sulfur ( Examples are CuIn (Se, S) and are generally referred to as chalcopyrite absorber layers.
• gallium absorber agent layer eg, Cu (In, Ga) Se 2 or CuGaSe 2
• aluminum eg, Cu (In, Al) Se 2
• sulfur Examples are CuIn (Se, S) and are generally referred to as chalcopyrite absorber layers.
• the front-face substrate conventionally comprises, beneath a main surface facing the photovoltaic material, a transparent electrode coating in electrical contact with the photovoltaic material disposed below when considering that the main direction arrival of incident radiation is from above.
• photovoltaic cell must be understood to mean any set of constituents generating the production of an electric current between its electrodes by conversion of solar radiation, whatever the dimensions of this assembly and whatever the voltage may be. and the intensity of the current produced and in particular that this set of components has, or not, one or more connection (s) internal electrical (s) (in series and / or in parallel).
• connection s
• internal electrical s
• the present invention relates to transparent conductive layers, in particular based on oxides, of great interest on glass substrate.
• ITO indium tin oxide
• SnO 2 F layers of fluorine-doped tin oxide.
• Such layers constitute electrodes in certain applications: flat lamps, electroluminescent glazing, electrochromic glazing, liquid crystal display screen, plasma screen, photovoltaic panel or module, heated glasses. In other applications for low-emissive glazings, for example, these transparent conductive layers do not have to be energized.
• these transparent conductive layers are generally associated with an underlayer to improve the optical properties of a layer or a stack of transparent conductive layers on a glass substrate.
• EP 611 733 by PPG, which proposes a mixed gradient layer of silicon oxide and tin oxide to avoid the iridescence effects induced by the transparent conductive oxide layer. tin doped with fluorine.
• the patent of Gordon Roy FR 2 419 335 also proposes a variant of this underlayer to improve the color properties of a conductive transparent layer of fluorine-doped tin oxide.
• the precursors mentioned in this patent are on the other hand unusable on an industrial scale.
• Pilkington's EP 0275662B1 which proposes a sub-layer composed of silicon oxycarbide beneath an electroconductive layer based on fluorine-doped tin oxide, the said sub-layer providing the dual layer function. barrier against the diffusion of alkaline glass as well as anti-iridescence layer to neutralize the color in reflection.
• SAINT-GOBAIN also has know-how in this field: the patent FR 2,736,632 thus proposes a mixed sub-layer with inverse index gradient of silicon oxide and tin oxide as anti-backing layer. color of a conductive transparent layer of fluorine doped tin oxide.
• An aging test has been developed to accelerate the detection of this phenomenon. It involves subjecting the glass and its electrode for varying periods of time to the action of electric fields. This test aims to force the diffusion of alkali from glass to the layer, the latter being one of the causes of the occurrence of delamination.
• the delamination test is carried out as follows. In a first step, a counter electrode for example based on silver is deposited on the glass opposite side to the side provided with the electroconductive electrode. In a second step, the assembly thus formed is brought to 200 ° C either by direct contact of the silver face on a hot plate or by means of annealing in an oven.
• the inventors have elaborated a stack of sub-layers connecting a glass substrate to a transparent conductive oxide layer considerably improving the adhesion of the latter. , in particular under conditions of putting under electric field of the assembly and relatively high temperatures, greater than 100 or 200 ° C.
• the subject of the invention is therefore a glass transparent substrate, associated with a transparent electroconductive layer capable of constituting a photovoltaic module electrode and composed of a doped oxide, characterized by the interposition, between the glass substrate and the transparent electroconductive layer, a layer of one or more first nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) having good adhesion properties with the glass, and then a mixed layer one or more second nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) having good adhesion properties with the glass, and one or more third (s) nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) likely (s) to constitute, optionally in the doped state, a transparent electroconductive layer.
• the invention makes it possible to obtain stackings of layers adapted to several titles for photovoltaic modules.
• the mechanical strength on glass substrate is not affected in the presence of an electric field whose origin may be internal or external related to the power of the photovoltaic module or the presence of a metal frame around the module whose potential may be fluctuating, for use in real outdoor solar exposure conditions.
• the solar spectrum referred to herein is the AM 1.5 solar spectrum as defined by ASTM. This considerable improvement can be achieved for large glass surfaces (PLF - full width float), since deposition methods compatible with such dimensions are available for the relevant layers.
• the aesthetic defects such as a local variation of the diffuse transmission and of the blur, measured by means of a "haze meter"
• the invention is particularly well adapted to the manufacture of photovoltaic modules.
• the mechanical strength of the substrate of the invention is not affected within 24 hours after treatment with an electric field of at least 100 V, preferably 200 V on either side of the substrate, and temperature of at least 200 ° C, inducing a displacement of electrical charges of at least 2 mC / cm 2 , preferably 4 mC / cm 2 based on the electrical resistivity values of the glass substrate at the test temperature.
• mechanical strength it is meant that the stack or part of the stack does not delaminate.
• the at least one first and second nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) are chosen from nitrides or oxynitrides, or oxides or oxycarbides of Si, Al and Ti, especially SiOC, SiO 2 , SiON, TiO 2 , TiN and Al 2 O 3 ;
• the said third nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) are chosen from nitrides or oxynitrides, or oxides or oxycarbides of Sn, Zn and In, in particular Sn0 2; , ZnO and InO;
• said transparent electroconductive layer is composed of an oxide doped with Sn, Zn or In, such that Sn0 2 : F, SnO 2 : Sb, ZnO: Al, ZnO: Ga, ZnO: B, InO: Sn or ZnO: In .
• said layer of one or more first nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) is a silicon oxycarbide SiOC layer;
• said mixed layer is a layer of silicon oxide and tin; the molar ratio [Si] / [Sn] in said mixed layer is at least 1, preferably 2; the inventors have realized that this characteristic has a particularly positive effect on the mechanical strength as defined above, in the context of use as a photovoltaic module in particular;
• the thickness of said layer of one or more first nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) is at least equal to 5 nm; the thickness of said layer of one or more first nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (s) is at most equal to 80 nm; indeed greater thicknesses do not provide additional advantage in terms of mechanical strength for example;
• the thickness of said mixed layer is at least equal to 3 nm
• the thickness of said mixed layer is at most equal to 65 nm, preferably 40 nm; for greater thicknesses may appear local variations of the blur affecting more or less the aesthetic appearance of the final products, including photovoltaic modules;
• said transparent electroconductive layer composed of a doped oxide is connected to said mixed layer with the interposition of a layer of the same undoped oxide, the cumulative thickness of the two layers of the undoped oxide and the doped oxide being in particular between 300 and 1600 nm, preferably at most equal to 1100 nm and particularly preferably at 900 nm, and the ratio of the thicknesses of the two layers then being between 1: 4 and 4: 1.
• the invention also relates to a method of manufacturing a substrate as described above, said layer of one or more first nitride (s) or oxynitride (s), or oxide (s) or oxycarbide (S), said mixed layer and said transparent electroconductive layer are obtained by successive deposits by chemical vapor phase.
• Chemical Vapor Deposition can be easily applied on large scale glass surfaces, especially on Full Float Width (PLF). It does not require any vacuum installation.
• SiO 2 SiOC-SiOSn
• TEOS tetraethoxysilane
• HMDSO hexamethyldisiloxane
• SiH 4 silane
• SnO 2 SnO 2
• SiOSn, SnO 2 , SnO 2 : F monobutyltin trichloride (MBTCI), dibutyltin diacetate (DBTA), tin tetrachloride (SnCl 4 ); dibutyltin dichloride (DBTCI); as another carbon precursor (SiOC): ethylene, carbon dioxide;
• SiOC SiOSn, SnO 2 , SnO 2 : F
• carbon dioxide oxygen, water
• fluorinated precursor SnO 2 : F: tetrafluoromethane (CF4), octafluoropropane (C3F8), hexafluoroethane (C2F6), hydrogen fluoride (HF), difluoro-chloromethane (CHCIF 2 ), difluoro-chloroethane ( CH 3 CCIF 2 ), trifluoromethane (CHF 3 ), dichlorodifluoromethane (CF 2 Cl 2 ), trifluorochloromethane (CF 3 Cl), trifluoromethylmethane (CF 3 Br), trifluoroacetic acid (TFA, CF 3 COOH), nitrogen trifluoride (NF 3 ).
• CF4 tetrafluoromethane
• C3F8 octafluoropropane
• C2F6 hexafluoroethane
• hydrogen fluoride HF
• difluoro-chloromethane CHCI
• Said successive deposits are advantageously carried out at a substrate temperature of at least 500 ° C., which can reach values of 650 ° C. or more.
• the SiOC layer may be deposited on the production line of the glass substrate and the SiOSn layer outside this production line, or these two layers may be deposited outside this production line.
• said successive depositions by chemical vapor phase are carried out on the production line of the glass substrate, for example on a continuous ribbon in the part comprising the float, the exit and the beginning of the lehr.
• the invention also has for objects:
• a photovoltaic module comprising a substrate described above; a shaped heating glass comprising a substrate as described above;
• a plasma screen (PDP for Plasma Display Panel) comprising a substrate according to the invention
• a flat lamp electrode comprising such a substrate.
• low-e a low emissive glass comprising such a substrate.
• a 25 nm layer of SiOC is deposited here from
• a 1 ⁇ m layer of Sn0 2 : F is then deposited from
• the sample is subjected to an electrical voltage of 200 V on either side of the sample and at a temperature of 200 ° C. for varying periods of time. There is, 24 hours after this operation, the floor value of displaced electrical charges for which there is delamination (see above detailed description of this aging test).
• This floor value is here less than 0.5 m C / cm 2 , which is considered to correspond to a relatively low mechanical strength, insufficient for many applications, especially as a photovoltaic module.
• a 40 nm layer of SiOSn is deposited from
• the molar Si / Sn ratio in this layer is 0.5.
• a layer of 1 ⁇ m of Sn0 2 : F is then deposited as in the example
• Delamination is observed from a value of displaced electrical charges of less than 0.5 m C / cm 2 , which is insufficient.
• This sample also showed local variations in the blur affecting the aesthetic appearance of the product.
• a delamination is observed from a value of displaced electrical charges of less than 1 m C / cm 2 , which is substantially improved with respect to those of the preceding examples, but which may still be insufficient in certain targeted applications.
• Delamination occurs from a value of displaced electrical charges of 4-5 m C / cm 2 , correct for many target applications.
• Example 4 is reproduced by modifying only the SiOSn layer, having here an Si / Sn molar ratio of 2.7, and obtained from
• Delamination occurs from a floor value of displaced electrical charges of 10 m C / cm 2 , very good.
• Examples 3 to 5 are reproduced by modifying the SiOSn layer, with a thickness of 80 nm and having a 2.7 Si / Sn molar ratio, obtained from
• Example 6 is repeated, but with a value of 0.5 of the Si / Sn molar ratio of the SiOSn layer, obtained from
• Delamination occurs from a value of displaced loads less than 1 m C / cm 2 , which may or may not be suitable depending on the application, but relatively low.
• Delamination occurs from a value of displaced electrical charges of less than 2 m C / cm 2 , which may be sufficient in some applications, however perfectible.
• Example 8 is reproduced by modifying only the SiOSn layer, this time of 50 nm in thickness and Si / Sn 2.7 molar ratio, obtained from
• the floor value of displaced loads to which we deplore a delamination is high here, of 12 m C / cm 2 .
• Examples 8 and 9 are reproduced by modifying only the SiOSn layer, here 70 nm thick and with a Si / Sn 2.7 molar ratio, layer obtained from
• the floor value of displaced loads from which delamination is observed is here the highest: 20 m C / cm 2 .
• the invention has provided a stack of layers providing mechanical strength and high adjustable optical properties, perfectly suited to demanding applications, especially for photovoltaic modules.
• This stack is of course compatible with obtaining the functionality of a photovoltaic module to the highest degree expected at present.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Electromagnetism (AREA)
• General Chemical & Material Sciences (AREA)
• Geochemistry & Mineralogy (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Power Engineering (AREA)
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• Life Sciences & Earth Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Crystallography & Structural Chemistry (AREA)
• Photovoltaic Devices (AREA)
• Surface Treatment Of Glass (AREA)
• Non-Insulated Conductors (AREA)
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• 2010
  • 2010-02-22 FR FR1051244A patent/FR2956659B1/fr not_active Expired - Fee Related
• 2011
  • 2011-02-04 CN CN201180014906.3A patent/CN102803173B/zh not_active Expired - Fee Related
  • 2011-02-04 JP JP2012554391A patent/JP5841074B2/ja not_active Expired - Fee Related
  • 2011-02-04 US US13/580,319 patent/US20130025672A1/en not_active Abandoned
  • 2011-02-04 KR KR1020127024674A patent/KR101774611B1/ko active IP Right Grant
  • 2011-02-04 EP EP11708062A patent/EP2539292A1/fr not_active Withdrawn
  • 2011-02-04 WO PCT/FR2011/050226 patent/WO2011101572A1/fr active Application Filing
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• 2012
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