EP2461882A1 - Système et procédé de production de monosilane - Google Patents

Système et procédé de production de monosilane

Info

Publication number
EP2461882A1
EP2461882A1 EP10737918A EP10737918A EP2461882A1 EP 2461882 A1 EP2461882 A1 EP 2461882A1 EP 10737918 A EP10737918 A EP 10737918A EP 10737918 A EP10737918 A EP 10737918A EP 2461882 A1 EP2461882 A1 EP 2461882A1
Authority
EP
European Patent Office
Prior art keywords
reaction
column
rectification column
monosilane
plant according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10737918A
Other languages
German (de)
English (en)
Inventor
Adolf Petrik
Jochem Hahn
Christian Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schmid Silicon Technology GmbH
Original Assignee
Schmid Silicon Technology GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Silicon Technology GmbH filed Critical Schmid Silicon Technology GmbH
Publication of EP2461882A1 publication Critical patent/EP2461882A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B01D3/009—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping in combination with chemical reactions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency

Definitions

  • the present invention relates to a plant for the preparation of monosilane (SiH 4 ) by catalytic disproportionation of trichlorosilane (SiHCb) and a corresponding method which can be carried out in such a plant.
  • High purity silicon is typically produced in a multi-stage process starting from metallurgical silicon, which may have a relatively high level of impurities.
  • this can be converted, for example, into a trihalosilane, such as trichlorosilane (SiHCb), which is subsequently decomposed thermally to give highly pure silicon.
  • a trihalosilane such as trichlorosilane (SiHCb)
  • SiHCb trichlorosilane
  • Such a procedure is known for example from DE 2 919 086.
  • Monosilane can be obtained in particular by disproportionation of trichlorosilane.
  • the latter can in turn be produced, for example, by reacting metallurgical silicon with silicon tetrachloride and hydrogen.
  • a plant according to the invention for the preparation of monosilane has, analogously to the plants described in EP 1 268 343 and in EP 1 144 307, a reaction column with a reactive / distillative reaction range in which trichlorosilane can be disproportionated on a catalyst.
  • the reaction column comprises a derivative for monosilane-containing reaction product formed in the disproportionation. This is then purified in a rectification column, which is also part of the plant according to the invention.
  • the system according to the invention comprises one or more capacitors in which or in which nosilane-containing reaction product is partially condensed before the subsequent purification in the rectification column.
  • a system according to the invention is characterized in that it is in any of the arranged between the reactive / distillative reaction region of the reaction column and the rectification column capacitors to a capacitor having an operating temperature below minus 40 0 C.
  • the operating temperature of the capacitors or the capacitor between the reactive / distillative reaction zone and the rectification column is preferably between minus 20 and minus 40 C 0 0 C. Within this range, values of between minus 20 and minus 30 C 0 0 C are more preferred. Most preferably, the operating temperature is about minus 25 0 C.
  • the one or more condensers between the reaction column and the rectification column are thus preferably with a coolant having a temperature above minus 40 0 C, preferably between minus 20 0 C and minus 40 0 C, in particular between minus 20 0 C and minus 30 0 C, particularly preferably from about minus 25 0 C, filled.
  • a coolant having a temperature above minus 40 0 C, preferably between minus 20 0 C and minus 40 0 C, in particular between minus 20 0 C and minus 30 0 C, particularly preferably from about minus 25 0 C, filled.
  • Suitable coolants for these temperature ranges are known to the person skilled in the art.
  • the one or more capacitors may be integrated, for example, in the top of the reaction column. But it is also possible to switch one or more separate capacitors between the reaction column and the rectification column.
  • the system according to the invention can have more than one reaction column and / or more than one rectification column.
  • the capacitors arranged between the rectification columns and the reaction columns Due to the relatively low temperatures at which the one or more capacitors arranged between the rectification column and the reaction column are operated, these can also be passed by chlorosilanes, in particular monochlorosilane.
  • monosilane-containing product mixture entering the rectification column generally has a significant proportion of chlorosilanes, in particular of monochlorosilane.
  • the rectification column preferably has a heating region in which incoming monosilane-containing or monochlorosilane-containing reaction product from the reaction column can be completely evaporated.
  • This heating range is set in preferred embodiments to a temperature between 0 0 C and 20 0 C. At these temperatures, only silicon tetrachloride or trichlorosilane would not be evaporated. However, these two components usually do not pass through the upstream capacitors or only in very small quantities.
  • the rectification column preferably comprises a cooling region, which connects directly to the heating region of the rectification column. Within this cooling range, the temperature drops gradually, starting from the heating region of the rectification column. It is preferred that the temperature drops to values between -80 0 C and -100 0 C, preferably to about -90 0 C, drops.
  • the pressure in the cooled region of the rectification column is preferably between 1 bar and 5 bar, in particular between 2 and 3 bar. As a rule, all chlorosilanes can be completely separated off at such temperatures, so that essentially pure monosilane emerges from the rectification column. This can then be completely reconciled for further storage. be densified, but optionally also immediately further processed or fed to a further purification.
  • the system can be kept relatively simple in terms of apparatus. It is much less expensive to design a capacitor for operation at minus 25 ° C. than for operation below minus 60 ° C., as known from the prior art. Other, cheaper refrigerants can be used, cryogenic refrigerators are not required and the isolation effort is lower.
  • significant energy advantages especially compared to those systems in which a total condensation of the arriving at the top of the reaction column monosilane-containing product mixture is provided. Since downstream purification in a rectification column can not be avoided even in such cases and the condensed monosilane-containing product had to be evaporated again anyway, it is doubtless more expedient to dispense with a total condensation.
  • the rectification column is connected via a recycle line to the reaction column, so that in the rectification column condensed and separated chlorosilanes can be returned to the reaction column.
  • the reactive / distillative reaction region of a reaction column in a system according to the invention can in preferred embodiments be formed from two or more separate reactive / distillative individual regions. These can be arranged in series and / or parallel to each other. Particularly preferably, two or more reactive / distillative individual regions are arranged one above the other in a reaction column, wherein higher reaction regions are preferably operated at lower temperatures than lower ones.
  • a system according to the invention comprises at least one intermediate capacitor, which is arranged between two such individual regions.
  • Such an intermediate capacitor for example, at temperatures between -20 0 C and + 30 0 C, preferably between 0 0 C and 25 0 C, operated. For example, an operation with cooling water at room temperature is possible.
  • the temperature in the reactive / distillative reaction zone is as a rule to values of between 10 0 C and 200 0 C, in particular between 10 0 C and 150 0 C.
  • the pressure in the reaction column is preferably between 1 bar and 5 bar, in particular between 2 bar and 3 bar.
  • the temperature set in individual reaction areas can quite clearly differ.
  • a process for the preparation of monosilane is also the subject of the present application.
  • the method according to the invention can also be carried out well in a system according to the invention.
  • trichlorosilane is reacted in a reaction column having a reactive / distillative reaction range to form a monosilane-containing reaction product.
  • This is then purified in a rectification column, wherein the monosilane-containing reaction product is partially condensed before transfer into the rectification column in at least one condenser, but this does not happen a capacitor which is operated at a temperature below minus 40 0 C.
  • FIG. 1 shows schematically the structure of a device according to the invention
  • reaction column 100 Plant with a reaction column, a rectification column and a rectification column upstream condenser. Shown is the reaction column 100, in which trichlorosilane can be reacted under disproportionating conditions.
  • the feeding of trichlorosilane can take place via the feed line 101.
  • the reaction column has a heating region 106 in which for evaporation the trichlorosilane required energy is provided.
  • the actual reaction takes place in the reactive / distillative individual regions 104 and 105, which together form the reactive / distillative reaction region of the reaction column 100. Both individual areas contain catalytic solids.
  • trichlorosilane introduced into the column via the feed line 101 is reacted in the individual region 104, forming a monosilane-containing product mixture which can escape into the individual region 105.
  • disproportionation products of higher density and higher boiling point such as tetrachlorosilane, sink to the bottom.
  • the monosilane-containing reaction mixture can be transferred via the discharge line 102 into the rectification column 109, in which a further separation of the reaction mixture can take place.
  • the condenser 103 is arranged, which is integrated in the top of the reaction column 100 and is operated at a temperature of minus 25 0 C. Furthermore, the reaction column to the intermediate capacitor 108, which is arranged between the individual regions 104 and 105 and which is operated at a temperature of about 20 0 C.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

L'invention porte sur un système et un procédé de production de monosilane (SiH4) par dismutation de trichlorosilane (SiHCI3). Le trichlorosilane est amené à réagir sur un catalyseur dans une colonne de réaction (100) puis est purifié dans une colonne de rectification (109). Un ou plusieurs condensateurs (103) sont disposés entre une zone réactionnelle réactive/distillative (104 ; 105) dans la colonne de réaction (100) et la colonne de rectification (109), condensateurs dans lesquels le produit réactionnel à teneur en monosilane issu de la colonne de réaction (100) est partiellement condensé. On utilise cependant exclusivement des condensateurs qui sont utilisés à une température supérieure à -40°C.
EP10737918A 2009-08-04 2010-08-02 Système et procédé de production de monosilane Withdrawn EP2461882A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009037154A DE102009037154B3 (de) 2009-08-04 2009-08-04 Verfahren zur Herstellung von Monosilan
PCT/EP2010/061199 WO2011015548A1 (fr) 2009-08-04 2010-08-02 Système et procédé de production de monosilane

Publications (1)

Publication Number Publication Date
EP2461882A1 true EP2461882A1 (fr) 2012-06-13

Family

ID=42983497

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10737918A Withdrawn EP2461882A1 (fr) 2009-08-04 2010-08-02 Système et procédé de production de monosilane

Country Status (10)

Country Link
US (1) US20120183465A1 (fr)
EP (1) EP2461882A1 (fr)
JP (1) JP5722890B2 (fr)
KR (1) KR20120068848A (fr)
CN (1) CN102548628A (fr)
CA (1) CA2769192A1 (fr)
DE (1) DE102009037154B3 (fr)
RU (1) RU2012106749A (fr)
TW (1) TWI510433B (fr)
WO (1) WO2011015548A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102874817B (zh) * 2012-09-14 2014-10-08 浙江精功新材料技术有限公司 一种二氯二氢硅歧化制备硅烷的方法
WO2014182578A1 (fr) 2013-05-04 2014-11-13 Centrotherm Photovoltaics Usa, Inc. Système et procédé de production de silane
CN103449444B (zh) * 2013-08-23 2015-10-28 中国恩菲工程技术有限公司 纯化硅烷的方法
EP3206990A4 (fr) * 2014-10-14 2018-10-10 SiTec GmbH Procédé de distillation
DE102015203618A1 (de) 2015-02-27 2016-09-01 Schmid Silicon Technology Gmbh Kolonne und Verfahren zur Disproportionierung von Chlorsilanen zu Monosilan und Tetrachlorsilan sowie Anlage zur Gewinnung von Monosilan
CN104925813B (zh) * 2015-05-18 2017-12-01 中国化学赛鼎宁波工程有限公司 一种三氯氢硅制备硅烷的设备及其方法
CN104986770B (zh) * 2015-07-14 2017-12-12 天津市净纯科技有限公司 三氯氢硅歧化反应精馏生产硅烷的装置及方法
CN106241813B (zh) * 2016-08-16 2021-01-01 上海交通大学 一种由三氯氢硅生产高纯硅烷的系统及方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2028289B (en) 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
JPS6042216A (ja) * 1983-08-10 1985-03-06 Osaka Titanium Seizo Kk トリクロロシラン・ジクロロシラン・モノクロロシランの不均斉化方法
DE19860146A1 (de) * 1998-12-24 2000-06-29 Bayer Ag Verfahren und Anlage zur Herstellung von Silan
US6723886B2 (en) * 1999-11-17 2004-04-20 Conocophillips Company Use of catalytic distillation reactor for methanol synthesis
DE10017168A1 (de) * 2000-04-07 2001-10-11 Bayer Ag Verfahren und Anlage zur Herstellung von Silan
DE102005046105B3 (de) * 2005-09-27 2007-04-26 Degussa Gmbh Verfahren zur Herstellung von Monosilan
CN101486727B (zh) * 2009-02-13 2011-05-18 李明成 高纯硅烷气体连续制备方法
DE102009032833A1 (de) * 2009-07-08 2011-01-13 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Monosilan

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2011015548A1 *

Also Published As

Publication number Publication date
WO2011015548A1 (fr) 2011-02-10
CN102548628A (zh) 2012-07-04
TW201109277A (en) 2011-03-16
TWI510433B (zh) 2015-12-01
CA2769192A1 (fr) 2011-02-10
RU2012106749A (ru) 2013-09-10
KR20120068848A (ko) 2012-06-27
JP5722890B2 (ja) 2015-05-27
DE102009037154B3 (de) 2010-12-09
JP2013500927A (ja) 2013-01-10
US20120183465A1 (en) 2012-07-19

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