EP2377160B1 - A luminescent photovoltaic generator and a waveguide for use in a photovoltaic generator - Google Patents

A luminescent photovoltaic generator and a waveguide for use in a photovoltaic generator Download PDF

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Publication number
EP2377160B1
EP2377160B1 EP09793597.7A EP09793597A EP2377160B1 EP 2377160 B1 EP2377160 B1 EP 2377160B1 EP 09793597 A EP09793597 A EP 09793597A EP 2377160 B1 EP2377160 B1 EP 2377160B1
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inorganic
luminescent material
species
particles
waveguide
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German (de)
English (en)
French (fr)
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EP2377160A1 (en
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Cornelis R. Ronda
Dirk K. G. De Boer
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Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
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Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7776—Vanadates; Chromates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/77928—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a luminescent photovoltaic generator and a waveguide for use in a photovoltaic generator.
  • a photovoltaic generator is a device that generates electricity from light.
  • Traditional solar panels having an array of solar cells, have become efficient to a point that commercialisation is now widespread.
  • Such traditional panels nevertheless have their disadvantages. For example, to maximise power yield, they should be adapted to follow the sun as it crosses the sky. Additionally, the traditional panels do not generate electricity particularly well if the incident light is diffuse, for example on a cloudy day.
  • photovoltaic generators that can be used in stationary systems and that can operate more efficiently when ambient light is diffuse.
  • One type of photovoltaic generator that has been developed is a luminescent photovoltaic generator.
  • This type of device includes a photovoltaic cell and an associated luminescent portion. The device is typically arranged such that incident light passes into the luminescent portion, at least some of the incident light being absorbed, then emitted and passed to the photovoltaic cell, where the light generates electricity.
  • the luminescent emission of the light is typically in all directions, so that suitable reflectors ideally should be placed around sides of the luminescent portion to minimise loss of emitted light, and to guide as much of the emitted light to the photovoltaic cell.
  • Luminescent photovoltaic generators although promising in theory, have yet to reach an efficiency that allows them to be used commercially. There is a constant desire to improve efficiency of luminescent photovoltaic generators.
  • the organic luminescent solar concentrators disclosed in the paper mentioned above by Currie et al have fairly broad emission spectra, in common with most organic luminescent materials. With such materials, reflectors on the outside of the luminescent portion of the concentrators need to be able to reflect most, if not all, of the emitted light. On the side of the device on which light is incident, the reflector must allow incident light of an appropriate wavelength through to the luminescent material so that this light can be absorbed, but it must prevent emitted light from the luminescent material passing through the reflector, and instead reflect this, so that it can reach the solar cell. Such reflectors are termed light or wavelength filters. It can be costly to provide light filters that reflect across a broad range of wavelengths.
  • Organic luminescent materials also suffer from degradation over an extended period, particularly from incident UV light.
  • Another example of a luminescent solar collector is given in US 2008/0149165 A1 .
  • the present invention provides a waveguide for use in a photovoltaic generator comprising a photovoltaic cell, the waveguide comprising a transparent matrix having (i) particles of an inorganic luminescent material dispersed therein and/or (ii) an inorganic luminescent material disposed at at least one side thereof, wherein the inorganic luminescent material comprises a first species that absorbs light in the region of 300 nm to 1420 nm, and a second species that emits light at a greater wavelength than the first species absorbs, and energy transfer occurs between the first and second species, such that the inorganic luminescent material absorbs light in the region of 300 nm to 1420 nm, and emits at the greater wavelength, thereby minimizing re-absorption, and the light at the greater wavelength is at an appropriate energy to generate a voltage in the photovoltaic cell, wherein the first species are formed by a first set of semiconductor containing quantum particles and the second species are formed by a second set of semiconductor
  • the present invention provides a photovoltaic generator comprising a photovoltaic cell and a waveguide comprising a transparent matrix having (i) particles of an inorganic luminescent material dispersed therein and/or (ii) an inorganic luminescent material disposed at at least one side thereof, wherein the inorganic luminescent material comprises a first species that absorbs light in the region of 300 nm to 1420 nm, and a second species that emits light at a greater wavelength than the first species absorbs, and energy transfer occurs between the first and second species, such that the inorganic luminescent material absorbs light in the region of 300 nm to 1420 nm, and emits at the greater wavelength, thereby minimizing re-absorption, and the light at the greater wavelength is at an appropriate energy to generate a voltage in the photovoltaic cell, wherein the first species are formed by a first set of semiconductor containing quantum particles and the second species are formed by a second set of semiconductor containing quantum particles, where
  • Inorganic luminescent materials have been found to be preferable over organic luminescent materials since they do not tend to degrade over an extended period. In addition, they allow, when based on energy transfer and/or inorganic materials doped with rare-earth or transition metal ions, a large Stokes Shift without resulting in substantial thermal quenching of the luminescence. Moreover, certain embodiments of the present invention, as described below, may be used with easy-to-fabricate interference filters, particularly embodiments in which the wavelength difference between excitation wavelength and emission wavelength is large and the emission line width is small. Quantum particles, such as quantum dots, quantum rods or core shell systems, are used in or as the inorganic luminescent material. Re-absorption is minimised by using quantum particles with indirect emission transitions, using small and large quantum particles. In the case in which energy is transferred from small to large quantum particles the large quantum particles are present in small amounts to prevent re-absorption by the large quantum particles.
  • the inorganic luminescent material has an absorption line width of 100 nm or more, an emission line width of 10 nm or less and a Stokes shift of 100 nm or more.
  • the waveguide further comprises an interference filter disposed at at least one side transparent matrix, the interference filter (i) allowing transmission of light into the waveguide within the electromagnetic region that is absorbed by the inorganic luminescent material and (ii) selectively reflecting light within the electromagnetic region that is emitted from the inorganic luminescent material.
  • the transparent matrix comprises a non-crystalline material and the inorganic luminescent material comprises a crystalline material.
  • the inorganic luminescent material has a high wavelength absorption limit of ⁇ a , where ⁇ a is a wavelength that corresponds to an energy that is 20 % or more than the energy of the band gap in the photovoltaic cell.
  • the inorganic luminescent material may comprises a plurality of types of first species that absorb at different wavelengths and a single type of second species that emits at a certain wavelength and the luminescent material is preferably a line emitter.
  • the luminescent material is preferably a line emitter.
  • a plurality of different inorganic luminescent materials may be used in the device, the different materials having absorption over different wavelengths from one another, but having an emission peak that is the same or substantially the same (for example within about 20 nm) as one another, and preferably the inorganic luminescent materials are line emitters.
  • this allows relatively inexpensive interference filters that are selectively reflective only for the emitted wavelengths to be used, which saves on the cost of manufacture of the photovoltaic device.
  • the inorganic luminescent material comprises an inorganic phosphor.
  • the inorganic luminescent material may comprise a plurality of types of inorganic phosphor.
  • the inorganic phosphor comprises an inorganic host material containing first and second species, wherein the first species is an ion selected from Ce 3+ , Eu 2+ or Yb 2+ and the second species is an ion selected from a rare earth ion and a transition metal ion.
  • the inorganic phosphor comprises Gd 3 Ga 5 O 12 ;Ce, Cr.
  • the inorganic luminescent material comprises an inorganic fluorescent material.
  • the inorganic fluorescent material comprises an inorganic host material containing first and second species, the concentration of the first species in the inorganic host material is greater than the concentration of the second species and the second species is present in the inorganic host material in an amount of 0.5 or less mole%.
  • the inorganic fluorescent material comprises CaAlSiN 3 ; Ce, Eu.
  • the inorganic luminescent material comprises quantum particles, as described herein.
  • the first and second species comprise, independently, quantum particles, which may be selected from quantum dots, quantum rods and quantum core/shell particles.
  • the present invention provides a waveguide for use in a photovoltaic generator, and a photovoltaic generator as described above.
  • the transparent matrix has (i) particles comprising an inorganic luminescent material dispersed therein and/or (ii) an inorganic luminescent material disposed at at least one side thereof. If the transparent matrix has particles comprising an inorganic luminescent material dispersed therein and an inorganic luminescent material disposed at at least one side thereof, the inorganic luminescent material of the particles and the material disposed at at least one side of the transparent matrix may be the same or different materials, and may be as described herein.
  • the particles may comprise, consist essentially of or consist of the inorganic luminescent material. If the particles consists essentially of the inorganic luminescent material, preferably less than 5 wt %, more preferably less than 2 wt%, most preferably less than 1 wt % of other materials are present in the particles.
  • the inorganic luminescent material preferably absorbs light in a region of the electromagnetic spectrum, optionally selected from the UV and/or visible and/or infrared region of the electromagnetic spectrum, and emits light at a greater wavelength.
  • the light at the greater wavelength is at an appropriate energy to generate a voltage in the photovoltaic cell.
  • the inorganic luminescent material preferably absorbs light in a region of from 300 nm to 1420 nm.
  • the maximum absorption peak is within the UV and/or visible and/or infrared region of the electromagnetic spectrum, preferably within the region of 300 nm to 1420 nm.
  • the line width of the absorption peak is 50 nm or more, preferably 100 nm or more, more preferably 150 nm or more, most preferably 200 nm or more.
  • Line width is the width at half height of the absorption line in nm, when measured at 25 °C.
  • the greater wavelength preferably corresponds to an energy of at least 1.05 times the bandgap energy in the photovoltaic cell.
  • the Stokes shift in the inorganic luminescent material is 50 nm or more, more preferably 80 nm or more, more preferably 100 nm or more.
  • the transparent matrix may be of any material known to the skilled person, for example, the transparent matrix may comprise a material selected from a glass and a transparent polymer.
  • the transparent polymer may be selected from a poly(methyl methacrylate) polymer (PMMA, which typically has a refractive index of about 1.49) and a polycarbonate polymer (typical refractive index of about 1.58).
  • PMMA poly(methyl methacrylate) polymer
  • the glass may be selected from any known transparent inorganic amorphous material, including, but not limited to, glasses comprising silicon dioxide and glasses selected from the albite type, crown type and flint type. Different glasses have different refractive indices and, if desired, the glass can be selected on the basis of its refractive index.
  • a glass of the albite type may have a refractive index of about 1.52.
  • a glass of the crown type may have a refractive index of about 1.49 to 1.52.
  • a glass of the flint type may have a refractive index of from about 1.58 to about 1.89, depending on its density and constituents, as would be appreciated by the skilled person.
  • a transparent matrix in the present context includes, but is not limited to, a material that can transmit light at least in a portion of the electromagnetic region in which the luminescent material absorbs light and at least in a portion of the electromagnetic region in which the luminescent material emits light. It preferably can transmit light at least in part across, optionally across the whole of, the region of 300 to 2000 nm.
  • the refractive index of the inorganic luminescent material is 93 % to 107 % of the refractive index of the transparent matrix, optionally 95 % to 105 % of the refractive index of the transparent matrix, optionally 98 % to 102% of the refractive index of the transparent matrix.
  • the present inventors have found that efficiency can be improved when the refractive index of the luminescent particles is the same as or substantially the same as that of the transparent matrix. This avoids scattering of light at the interface between the particles and the matrix.
  • Transparent materials for use in or as the transparent matrix with a range of refractive indexes are known, and the selection of a suitable material is within the skills of the skilled person.
  • the transparent matrix comprises or is a non-crystalline material and the inorganic luminescent material comprises or is a crystalline material. It has been found that where a glass has been doped with luminescent inorganic ions, such that the ions are within an amorphous environment, they generally do not show efficient luminescence. In the present invention, it has been found that an inorganic crystalline material is preferred as the luminescent material as the efficiency of the luminescence is generally higher than in a non-crystalline material.
  • An advantage of the transparent matrix comprising a non-crystalline material e.g. an amorphous material comprising a glass or a polymer, within which particles of the crystalline material can be dispersed, is that the waveguide can be manufactured generally more efficiently than a transparent crystalline matrix, yet with a high luminescent efficiency.
  • the particles of the inorganic luminescent material may have cubic symmetry.
  • the particles of the inorganic luminescent material may be of any appropriate size.
  • the particles may have a volumetric mean diameter of from 10 nm to 2 mm, for example.
  • the refractive index of the particles of the inorganic luminescent material is the same or substantially the same as that of the matrix in which they are dispersed, the size of the particles is not restricted.
  • the inorganic particles within the matrix may have a volumetric mean diameter of up to about 100 nm, preferably a volumetric mean diameter of up to about 50 nm.
  • the volumetric mean diameter of the particles of the inorganic luminescent material can be determined according to established techniques and equipment known to the skilled person, e.g. using electron microscopical techniques or using a Malvern Nanosizer instrument (commercially available).
  • the particles of the inorganic luminescent material may be dispersed in the transparent matrix by any appropriate method.
  • the method may comprise providing a liquid precursor to the transparent matrix, dispersing the particles within the liquid precursor and solidifying the liquid precursor to form the transparent matrix in which the particles of inorganic luminescent material are dispersed.
  • the liquid precursor may, for example, comprise or be a molten form of the material of the solid transparent matrix, and the particles of the inorganic luminescent material may be dispersed in the molten material, which is then solidified to form the transparent matrix in which the particles of inorganic luminescent material are dispersed.
  • the liquid precursor may comprise a liquid carrier containing the material of the transparent matrix and the particles of the inorganic luminescent material and the liquid carrier may be removed to form the transparent matrix in which the particles of inorganic luminescent material are dispersed; the material of the transparent matrix and the particles of the inorganic luminescent material may be present in the liquid carrier as a solution and/or a suspension, for example.
  • the liquid precursor may be a liquid containing an unpolymerised or incompletely polymerised precursor to the polymer and the particles of the inorganic luminescent material, and the unpolymerised or incompletely polymerised precursor may be polymerised or further polymerised to form the transparent matrix in which the particles of inorganic luminescent material are dispersed.
  • the inorganic luminescent material comprises or is a line emitter.
  • a line emitter is a species that emits with a very narrow emission line width.
  • Line emitters include, but are not limited to, materials that have an emission line width of 20 nm or less, preferably 10 nm or less, most preferably 5 nm or less.
  • Line width is the width at half height of the emission line in nm, when measured at 25 °C.
  • the line emitter emits light at a wavelength ⁇ 1
  • the photovoltaic generator further comprises a light filter disposed on a side of the transparent matrix through which light enters the transparent matrix, the light filter selectively reflecting emitted light at the wavelength ⁇ 1 back into the luminescent material and/or to the photovoltaic cell, but preferably allowing transmittance through the filter of light of wavelengths at which light will be absorbed by the luminescent material.
  • the wavelength filter is preferably an interference filter.
  • the inorganic luminescent material may comprise an inorganic fluorescent material or an inorganic phosphor, the inorganic phosphor being preferred.
  • Inorganic phosphors otherwise termed inorganic phosphorescent materials in the art, are known to the skilled person. They include inorganic luminescent materials that absorb light at a certain wavelength and then emit at another wavelength through a quantum mechanically forbidden electronic transition, for example a spin or parity forbidden transition.
  • the persistence of the luminescence in phosphorescent materials will generally be for about 1 ⁇ sec or more. Nevertheless, in some materials, in which luminescence is due to allowed optical transitions, emission may also be slow, for example in many materials doped with Eu 2+ and/or Yb 2+ . In some phosphorescent materials, the luminescence may persist for seconds or even minutes.
  • Phosphorescent materials are preferred over fluorescent materials, since they are far less likely to reabsorb photons emitted through luminescence of the material than a fluorescent material with comparable absorption and emission spectra. This will increase the efficiency of the photovoltaic generator.
  • the inorganic phosphor may be an inorganic material in which the absorption and emission occurs on the same ions in the material.
  • the inorganic phosphor may be an inorganic material containing and/or doped with transition metal and/or rare earth ions.
  • the transition metal ions, on which absorption and emission occurs are d 3 ions, i.e. ions, which have 3 electrons in their outer d-orbitals. Examples of d 3 ions include, but are not limited to, V 2+ , Cr 3+ , Mn 4+ and Fe 5+ .
  • the inorganic phosphor may comprise an inorganic host material that has been doped with an ion on which emission and absorption occurs, typically a single type of ion on which emission and absorption occurs.
  • examples of materials include, but are not limited to, Al 2 O 3 :Cr and Mg 2 TiO 4 :Mn, in which Al 2 O 3 and Mg 2 TiO 4 are the host materials and Cr 3+ and Mn 4+ are the ions on which emission and absorption occurs.
  • the crystal field acting on these emitting ions is not too small, as otherwise broad emission spectra will be encountered.
  • Dq/B for the emitting ions should be at least about 2.1 when C/B value is 2.5, in which Dq is the crystal field strength parameter and B and C are Racah parameters for the emitting ions in the host material.
  • Dq, B and C for an emitting ion within a host material are normally readily available in the literature and/or measurable using known techniques.
  • Inorganic phosphors such as those mentioned above have been found to be advantageous as they are able to absorb over a relatively broad range of frequencies, yet emit at a longer wavelength over a very narrow range (i.e. having a narrow line width).
  • the absorption bands can vary depending on the host material into which they are doped, but the emission band is much less dependent on the host material. This allows the skilled person to adapt the device accordingly and to select the host material according to the desired absorption range.
  • the amount (molar fraction) of the transition metal ions and/or rare earth ions in the host material is typically about 0.1 to 10 mole %. If the ions are doped into a material to replace other ions; 0.1 to 10 mole % of the replaced ions are the transition metal ions and/or rare earth ions.
  • the inorganic luminescent material may be an inorganic material in which the absorption and emission occurs on different species in the material.
  • the inorganic luminescent material may comprise a first species that absorbs light in the UV and/or visible and/or infrared region of the electromagnetic spectrum, optionally in the region of 300 nm to 1420 nm, and a second species that emits light at a greater wavelength than the first species absorbs, and energy transfer occurs between the first and second species, such that the material absorbs light in the UV and/or visible and/or infrared region of the electromagnetic spectrum, optionally in the region of 300 nm to 1420 nm, and emits at the greater wavelength, and the light at the greater wavelength is at an appropriate energy to generate a voltage in the photovoltaic cell.
  • the inorganic luminescent material may be an inorganic material in which the absorption and emission occurs on different ions in the material.
  • the inorganic luminescent material may comprise an inorganic host material that has been doped with a first ion on which absorption occurs and a second ion on which emission occurs. In such materials, an energy transfer from the first ion to the second ion will take place after the absorption of incident light by the first ion, such that the second ion is excited to a state that will allow it to emit light.
  • the first ion is preferably an ion that absorbs in the UV and/or visible and/or infrared region of the electromagnetic spectrum, optionally in the region of 300 nm to 1420 nm.
  • the first ion may be selected from Ce 3+ , Eu 2+ and Yb 2+ .
  • the second ion may be a rare earth ion, which may be selected from Pr 3+ , Er 3+ , Nd 3+ . Ho 3+ , Yb 3+ , Tm 3+ , Sm 3+ , Dy 3+, Mn 2+ , Yb 2+ and Eu 2+ .
  • the second ion may be a transition metal ion, including, but not limited to d 3 transition metal ions, which may be selected from V 2+ , Cr 3+ , Mn 4+ and Fe 5+ .
  • the emission of light on the second ion may be a forbidden transition, as described above;
  • the inorganic luminescent material that comprises an inorganic host material that has been doped with a first ion on which absorption occurs and a second ion on which emission occurs may be an inorganic phosphorescent material.
  • Such phosphorescent inorganic materials include, but are not limited to, Gd 3 Ga 5 O 12 ;Ce, Cr, in which Gd 3 Ga 5 O 12 is the host material, Ce in its cationic form is the first ion and Cr in its cationic form is the second ion.
  • This material absorbs in the range of 300 to 500 nm (an allowed optical absorption by Ce 3+ ) and emits at 730 nm (through a transition on Cr 3+ , this transition being a quantum mechanically forbidden transition). Such materials are advantageous, as re-absorption of emitted photons is reduced.
  • the first and second ions in the inorganic phosphor may be present in any suitable amount, depending on the desired levels of absorption and/or emission.
  • the first ion may be present in the inorganic host material in an amount of from 0.5 to 5 mole %.
  • the second ion may be present in the inorganic host material in an amount of from 0.5 to 5 mole%.
  • the emission of light on the second ion may be due an allowed electronic transition;
  • the inorganic luminescent material that comprises an inorganic host material that has been doped with a first ion on which absorption occurs and a second ion on which emission occurs may be an inorganic fluorescent material.
  • the second ion may be selected from Eu 2+ and Yb 2+ .
  • Suitable materials include, but are not limited to, CaAlSiN 3 ;Ce, Eu, in which CaAlSiN 3 is the host material, Ce 3+ is the first ion and Eu 2+ is the second ion. This material absorbs in the blue-green spectrum and emits in the range of 630 to 655 nm.
  • the first and second ions in the inorganic fluorescent material may be present in any suitable amount, depending on the desired levels of absorption and/or emission.
  • the first ion may be present in the inorganic host material in an amount of from 0.5 to 5 mole %.
  • the second ion is preferably present in the inorganic fluorescent material in an amount of 0.5 or less mole %, preferably 0.2 or less mole %, most preferably 0.1 or less mole %.
  • the second ion is preferably present in the inorganic fluorescent material in an amount of 0.01 or more mole %.
  • the present inventors have found that by reducing the amount of the second ion below the levels indicated above decreases the absorption of the emitted photons, which in turn increases the efficiency of the photovoltaic generator.
  • the inorganic luminescent material may comprise semiconductor containing particles that are of an appropriate size to allow them to fluoresce; such semiconductor containing particles will be termed quantum particles herein.
  • the inorganic luminescent material may comprise quantum dots, quantum rods and quantum core/shell particles.
  • Quantum dots, quantum rods and quantum core/shell particles are semiconductor containing particles that are of an appropriate size to allow them to fluoresce.
  • Quantum rods are particles that are elongate in shape.
  • Quantum core/shell particles are particles comprising a core of semiconductor material having a coating of a further material thereon, which may optionally coat the entire surface of the core; the further material may be a material selected from a semiconductor and/or dielectric material.
  • the particles generally have a diameter of from 1 to 50 nm in size.
  • the emission wavelength at which the particles will fluoresce is dependent on the nature of the semiconductor material and the size and shape of the particles and on the presence of a shell/coating surrounding the individual particles. The larger the particles, the lower the energy at which the particle will emit light when fluorescing.
  • the inorganic luminescent material preferably comprises semiconductor containing particles that emit light when fluorescing having a photon energy that is above the band gap of the solar cell. Species such as quantum dots, quantum rods and quantum core/shell particles have been found to be advantageous, since they have a generally broad absorption spectrum, but a narrow emission spectrum.
  • the semiconductor containing particles may comprise particles comprising a semiconductor material selected from one or more of a group IV elemental semiconductor, whereby numerals in the chemical formula should be read in subscript.
  • group IV compound semiconductors such as silicon germanide (SiGe); group III-V semiconductors, such as aluminium antimonide (AlSb), aluminium arsenide (AlAs), aluminium phosphide (AlP), boron phosphide (BP), boron arsenide (BAs), gallium antimonide (GaSb), gallium arsenide (GaAs), gallium phosphide (GaP), indium antimonide (InSb), indium arsenide (InAs), indium nitride (InN), indium phosphide (InP); III-V ternary semiconductor alloys, such as aluminium gallium arsenide (AlGaAs, Al x Ga 1-x As),
  • the quantum particles such as quantum dots, quantum rods and quantum core/shell particles, comprise a semiconductor material with an indirect bandgap, including, but not limited to, Si and GaP. Such materials have been found to be less likely to reabsorb emitted photons.
  • Semiconductor containing particles that are of an appropriate size to allow them to fluoresce such as quantum dots, quantum rods and quantum core/shell particles may be made by any method known to the skilled person, including, but not limited to, wet chemical methods, (MO)CVD methods and laser ablation methods.
  • quantum core/shell particles are particles comprising a core of semiconductor material having a coating of a further material thereon, which may optionally coat the entire surface of the core; the further material may be a material selected from a semiconductor and/or dielectric material, and if the further material comprises a semiconductor material, it may be as described herein. Emission can take place via the interface between the core and its coating involving charges of one kind in the core and of the other kind in the shell, which results in a larger Stokes Shift. CdTe/CdSe quantum core/shell particles show this effect. Accordingly, the quantum core/shell particles may comprise particles comprising a core of CdTe having a coating of CdSe thereon.
  • the quantum core/shell particles may be elongate, and may comprise quantum rods.
  • CdSe/CdS quantum rods show less spectral overlap than spherical systems; this is very beneficial in reducing re-absorption losses.
  • the quantum core/shell particles may comprise elongate particles, optionally quantum rods, comprising a core of CdSe having a coating of CdS thereon.
  • the inorganic luminescent material comprises a first species that absorbs light in the UV and/or visible and/or infrared region of the electromagnetic spectrum, in the region of 300 nm to 1420 nm, and a second species that emits light at a greater wavelength than the first species absorbs, and energy transfer occurs between the first and second species, such that the material absorbs light in the UV and/or visible and/or infrared region of the electromagnetic spectrum, in the region of 300 nm to 1420 nm, and emits at the greater wavelength, and the light at the greater wavelength is at an appropriate energy to generate a voltage in the photovoltaic cell, and the first and second species may independently comprise quantum particles, and the quantum particles are optionally selected from quantum dots, quantum rods and quantum core/shell particles.
  • the inorganic luminescent material comprises a mixture of quantum particles, which may be, for example have different sizes, shapes and/or comprise different materials.
  • the inorganic luminescent material may, for example, comprise a mixture of quantum particles, optionally selected from quantum dots, quantum rods and core/shell systems, having large and small sizes.
  • the inorganic luminescent material comprises and/or have been formed from a first set of quantum particles of an appropriate size to absorb light in the UV and/or visible and/or infrared region of the electromagnetic spectrum, in the region of 300 nm to 1420 nm, and the second set of quantum particles of an appropriate size, such that they emits at the greater wavelength that the first set of quantum particles absorb, and energy transfer occurs between the first and second set of quantum particles.
  • the first set of quantum particles will have smaller volumetric mean diameter than the second set of quantum particles and the first set of quantum particles may be present in the inorganic luminescent material in a greater proportion than the second set of quantum particles.
  • the inorganic luminescent material that comprises first and second sets of quantum particles has a Stokes shift of 50 nm or more, more preferably 80 nm or more, more preferably 100 nm or more.
  • the second set of quantum particles has a volumetric mean diameter equal to or larger than the Bohr-radius of the exciton in the semiconductor material from which they are made and the first set of quantum particles has a volumetric mean diameter that is less than the Bohr-radius of the exciton in the semiconductor material from which they are made.
  • the particle sizes and hence the volumetric mean diameter can e.g. be measured using the XRD peak width, using electron microscopy or using the Malvern nanosizer instrument.
  • the Bohr-radius of the exciton in a semiconductor material depends on the specific material and is generally between 1 and 10 nm. It is determined by the effective masses of the charge carriers in the semiconductor and the dielectric constant of the semiconductor.
  • the volume ratio (volume of second set of quantum particles: volume of all quantum particles) in the luminescent material is preferably 1:100 or less, preferably 1:200 or less.
  • a small amount of emitting quantum particles, relative to the absorbing quantum particles has been found to be advantageous in that the re-absorption of emitted photons has been found to be reduced.
  • quantum dots and/or quantum rods and/or core/shell systems are used.
  • the quantum unit that generates the radiation to be received by the photovoltaic element should be present in small amounts as specified above.
  • the quantum particles may be dispersed in the transparent matrix using any known technique, such as those mentioned above employing a liquid precursor.
  • the liquid precursor is a liquid containing an unpolymerised or incompletely polymerised precursor to a polymer and the quantum particles, and the unpolymerised or incompletely polymerised precursor is polymerised or further polymerised to form the transparent matrix in which the quantum particles are dispersed.
  • the polymer may comprise PMMA, and the liquid precursor comprises a solvent, MMA, and the quantum particles.
  • a dispersion of quantum particles in PMMA may be made as follows. Under vigorous stirring, a suitable amount of quantum particle colloidal solution (the nanoparticles being optionally capped using TOP/TOPO procedures, the solvent being optionally toluene) can be added into distilled MMA (methyl methacrylate) and a suitable radical initiator (e.g. azobisisobutyronitrile (AIBN) of 0.05 - 0.2% by weight).
  • a suitable radical initiator e.g. azobisisobutyronitrile (AIBN) of 0.05 - 0.2% by weight.
  • the MMA/quantum particle dispersion can then be heated, for example in a thermostatic water bath at about 90 °C for 20 min., until the dispersion has a suitable viscosity to be cast (prepolymerization), and then the dispersion is cast in suitable moulds.
  • the moulds can be further heated, for example in an oven at 60 °C, for postpolymerization, to form the dispersion
  • the efficiency of the photovoltaic generator will depend on a balance of factors, including, but not limited to, the absorption and emission wavelengths of the luminescent material, the amount of re-absorption that occurs in the luminescent material and the band gap in the photovoltaic cell.
  • the inorganic luminescent material preferably emits light having an energy (at the maximum intensity of emission) of at least 1.05 times the energy of the band gap in the photovoltaic cell.
  • the luminescent material should preferably absorb across a wide range of wavelengths. It has been found that it should absorb at wavelengths above about 300 nm.
  • the inorganic luminescent material need only absorb up to wavelengths of about 1420 nm.
  • the overlap between the absorption spectrum and emission spectrum should be as small as possible, which generally corresponds to a large Stokes shift.
  • the inorganic luminescent material has a high wavelength absorption limit of ⁇ a , where ⁇ a is a wavelength that corresponds to an energy that is 20 % or more than the energy of the band gap in the photovoltaic cell (both energies being measured in the same units, such as eV).
  • Table I shows a range of semiconductor materials that may be used in the photovoltaic cell, their band gaps (given in nm), the preferred absorption and emission ranges of the luminescent material that should be used with the semiconductor materials, and the preferred emitting ions that should be used with the semiconductor materials.
  • While semiconductor materials having high energy bandgaps will generally generate a higher voltage than those with low energy band gaps, they have the disadvantage that the breadth of the absorption spectrum that can be used in the associated luminescent material is smaller than for semiconductor materials having low energy band gaps.
  • the amount of the electromagnetic spectrum that can be used for absorption in the luminescent material will be smaller than for semiconductor materials with low energy band gaps, hence the percentage of incident photons converted to electricity will be smaller, and efficiency may be lower.
  • the photovoltaic cell preferably comprises a semiconductor material selected from Ge, GaInAs, CuInSe 2 , Si and GaAs.
  • Table I above shows combinations of semiconductor materials and emitting ions that would increase the efficiency of a device, generally for a waveguide that contains only one type of luminescent material and/or emitting species.
  • the waveguide and/or device may comprise a plurality of types of luminescent material and/or emitting species.
  • the present invention provides a photovoltaic generator comprising a photovoltaic cell and a waveguide comprising a transparent matrix having (i) particles of an inorganic luminescent material dispersed therein and/or (ii) an inorganic luminescent material is disposed at at least one side thereof, wherein the waveguide is associated with the photovoltaic cell, such that, in use, at least some of the light emitted from the luminescent material passes into the photovoltaic cell to generate a voltage in the cell.
  • the waveguide and/or the transparent matrix may have a plurality of sides.
  • a photovoltaic cell is disposed on at least one side of the waveguide.
  • at least one photovoltaic cell is disposed on each of two sides of the waveguide.
  • the transparent matrix may have a first side through which light enters the transparent matrix, and a side opposite the first side, with the remaining side or sides of the transparent matrix being termed lateral side or sides.
  • the one or more photovoltaic cells are preferably located on the lateral side or sides.
  • a light filter is disposed on at least one side of the waveguide or transparent matrix.
  • the light filter will preferably allow transmission of light that will be absorbed by the luminescent material but will reflect light that is emitted by the luminescent material.
  • a suitable filter is an interference filter.
  • Such filters are known to the skilled person and consist of layers of materials with alternating large and small values of refractive index.
  • reflective materials that reflect both light that will be absorbed and light that is emitted are disposed on sides or parts of sides of the waveguide other than the sides or part of sides on which the photovoltaic cell is disposed and through which light enters the transparent matrix.
  • the reflective material may comprise, for example, a white reflective material and/or a mirror.
  • the white reflective material may comprise a white granular material, for example containing TiO 2 particles. Suitable materials are known to the skilled person.
  • particles of the inorganic luminescent material are dispersed in the transparent matrix and the transparent matrix has a plurality of sides, wherein disposed at at least one side of the matrix is a photovoltaic cell, disposed at at least one side is a light filter, the remaining sides having disposed thereon reflective materials that reflect both light that will be absorbed and light that is emitted by the inorganic luminescent material.
  • the inorganic luminescent material is disposed at a side of the transparent matrix.
  • a layer comprising, consisting essentially of or consisting of the inorganic luminescent material may be disposed at a side of the transparent matrix. If the layer consists essentially of the inorganic luminescent material, preferably less than 5 wt %, more preferably less than 2 wt%, most preferably less than 1 wt % of other materials are present in the layer.
  • the inorganic luminescent material may be disposed on a surface of the transparent matrix, optionally as a layer or incorporated in a layer or film.
  • the side of the transparent matrix on which the luminescent material is disposed is preferably opposite the side through which light enters the waveguide, and preferably one or more photovoltaic cells are disposed on one or more of the lateral sides.
  • the layer of the inorganic luminescent material will preferably have a sufficient thickness, such that at least 90 % of emitted photos in the luminescent material passes back into the waveguide.
  • a reflective material may be disposed on the exterior side of the inorganic luminescent material, to assist reflectance of emitted photos back into the waveguide.
  • the photovoltaic generator further comprises a diffractive element, which will separate light into different wavelengths.
  • the diffractive element may be associated with the waveguide such that light incident on the diffractive element is separated into different wavelengths before entering the waveguide. This is advantageous when more than one kind of photovoltaic cell is used. In this way, the photon energy of the light can be optimally adapted to the photovoltaic cell used. Light with higher photon energy will then result in higher voltages generated by the corresponding photovoltaic elements.
  • the device may comprise a tandem solar cell system, in which a series of different solar cells are included in the device.
  • the different solar cells preferably comprise materials with different band gaps.
  • the different solar cells are preferably located on a lateral side of the device such that, in the direction of light propagation, i.e. in the direction away from the side through which light enters the waveguide, the band gaps of solar cells decrease.
  • the waveguide and/or transparent matrix may be generally cuboid in shape. It may have a surface for the admission of light, optionally having a light filter thereon, a surface opposite the surface for the admission of light, with the remaining sides being termed lateral sides. The distance between the surface for the admission of light and its opposite surface is preferably less than either of the distances between opposing lateral sides.
  • a light filter is preferably located on the surface for the admission of light.
  • one or more photovoltaic cells are located on one or more of the lateral sides. Reflective materials that reflect both light that will be absorbed and light that is emitted are preferably disposed on the remaining sides of the waveguide.
  • Figures 1a and 1b show an embodiment of a photovoltaic generator 1 of the present invention.
  • the transparent matrix 2 of the waveguide of the embodiment is cuboid and can be considered to have a top surface, four lateral surfaces and a bottom surface.
  • Figure 1a shows a top view of the photovoltaic generator 1
  • Figure 1b shows a side view of the photovoltaic generator 1.
  • Particles of an inorganic luminescent material (not shown) are dispersed in the transparent matrix of the waveguide 2.
  • An interference filter 3 (not shown in Fig 1a , shown in Fig 1b ) is disposed on the top surface of the transparent waveguide, and photovoltaic cells 4 are disposed on two opposing lateral surfaces of the waveguide.
  • White reflective materials 5 are disposed on the remaining surfaces of the waveguide.
  • Figures 2a and 2b show an embodiment of a photovoltaic generator 1 of the present invention.
  • the waveguide of the embodiment is cuboid and can be considered to have a top surface, four lateral surfaces and a bottom surface.
  • Figure 2a shows a top view of the photovoltaic generator 1
  • Figure 2b shows a side view of the photovoltaic generator 1.
  • a layer of inorganic luminescent material 6 is disposed on the bottom surface of the transparent matrix of the waveguide.
  • An interference filter 3 (not shown in Fig 2a , shown in Fig 2b ) is disposed on the top surface of the transparent waveguide, and photovoltaic cells 4 are disposed on two opposing lateral surfaces of the waveguide.
  • White reflective materials 5 are disposed on the remaining surfaces of the waveguide.
  • Figure 3 shows an embodiment of a tandem photovoltaic generator 1 of the present invention.
  • the generator of the embodiment is cuboid and can be considered to have a top surface, four lateral surfaces and a bottom surface.
  • Figure 3 shows a top view of the photovoltaic generator 1.
  • the generator comprises a number of parallel photovoltaic cells 4, and disposed between each pair of cells 4 is a transparent matrix 2.
  • On the bottom surface of each transparent matrix is a layer of inorganic luminescent material (not shown).
  • An interference filter (not shown) is disposed on the top surface each of the transparent matrices.
  • White reflective materials are disposed on the remaining surfaces of the transparent matrices.

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EP09793597.7A 2008-12-12 2009-12-07 A luminescent photovoltaic generator and a waveguide for use in a photovoltaic generator Not-in-force EP2377160B1 (en)

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Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010074477A2 (ko) * 2008-12-26 2010-07-01 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
CA2658193A1 (en) 2009-03-12 2010-09-12 Morgan Solar Inc. Stimulated emission luminescent light-guide solar concentrators
US20110220194A1 (en) * 2009-07-14 2011-09-15 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial
BR112012003934A2 (pt) * 2009-08-25 2017-05-23 Koninl Philips Electronics Nv concentrador luminescente pata luz solar e método para concentrar luz solar
US20110226324A1 (en) * 2010-03-16 2011-09-22 Grain Free Products, Inc. System for the Production of Single Crystal Semiconductors and Solar Panels Using the Single Crystal Semiconductors
JP2012054267A (ja) * 2010-08-31 2012-03-15 Sumitomo Bakelite Co Ltd 粒子、樹脂組成物、波長変換層および光起電装置
CN102456762B (zh) * 2010-10-27 2015-07-15 信义光伏产业(安徽)控股有限公司 晶体硅太阳能电池和非晶硅太阳能电池
US9263605B1 (en) 2011-04-20 2016-02-16 Morgan Solar Inc. Pulsed stimulated emission luminescent photovoltaic solar concentrator
WO2013008186A2 (en) 2011-07-12 2013-01-17 Koninklijke Philips Electronics N.V. Luminescent solar energy concentrator
KR20130115825A (ko) * 2012-04-13 2013-10-22 한국전자통신연구원 양방향 색구현 박막 실리콘 태양전지
US8962378B2 (en) * 2012-07-16 2015-02-24 The Boeing Company Photodiode and method for making the same
US20140079912A1 (en) 2012-09-17 2014-03-20 The Boeing Company Ir absorbing coatings comprisiing fluorinated nanoparticles
US10439090B2 (en) * 2012-11-09 2019-10-08 Board Of Trustees Of Michigan State University Transparent luminescent solar concentrators for integrated solar windows
US9921353B2 (en) 2013-06-14 2018-03-20 Philips Lighting Holding B.V. Light emitting device
JP6456585B2 (ja) * 2013-08-19 2019-01-23 株式会社豊田中央研究所 光電変換素子
JP5930214B2 (ja) * 2013-08-19 2016-06-08 株式会社豊田中央研究所 光電変換素子
US9666766B2 (en) 2013-08-21 2017-05-30 Pacific Light Technologies Corp. Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell
NL2011507C2 (en) * 2013-09-26 2015-03-30 Univ Delft Tech Tm2+ luminescent materials for solar radiation conversion devices.
JP6390417B2 (ja) * 2014-12-24 2018-09-19 日亜化学工業株式会社 近赤外発光蛍光体
EP3248225B1 (en) * 2015-01-19 2019-03-27 Università Degli Studi Di Milano - Bicocca Colourless luminescent solar concentrator, free of heavy metals, based on at least ternary chalcogenide semiconductor nanocrystals with absorption extending to the near infrared region
CN104934492A (zh) * 2015-06-10 2015-09-23 合肥润嘉节能玻璃有限责任公司 一种低辐射导光太阳能玻璃
WO2017057618A1 (ja) * 2015-09-29 2017-04-06 京セラ株式会社 太陽電池素子およびその製造方法並びに太陽電池モジュール
EP3408348B1 (en) * 2016-01-26 2020-03-18 Merck Patent GmbH Use of color converting sheet
KR102527228B1 (ko) * 2016-03-08 2023-05-02 삼성디스플레이 주식회사 발광 소자 및 이의 제조 방법
US10032947B2 (en) * 2016-03-29 2018-07-24 X Development Llc Two-stage light concentrator
ITUA20162918A1 (it) * 2016-04-27 2017-10-27 Univ Degli Studi Di Milano Bicocca Concentratore solare luminescente ad ampia area a base di nanocristalli semiconduttori a gap energetico indiretto
US10134802B2 (en) 2016-05-12 2018-11-20 Ostendo Technologies, Inc. Nanophosphors-converted quantum photonic imagers and methods for making the same
TWI593134B (zh) * 2016-05-19 2017-07-21 Method and structure for manufacturing graphene quantum dot on light-emitting diode
WO2018209000A1 (en) 2017-05-09 2018-11-15 Ubiqd Inc. Luminescent optical elements for agricultural applications
CN112088433A (zh) * 2018-03-05 2020-12-15 光环工程公司 使用磷光和波导用于能量存储的系统和方法
NL2021109B1 (en) * 2018-06-12 2019-12-17 Physee Group B V Inorganic luminescent materials for solar radiation conversion devices
US11611308B2 (en) 2018-11-06 2023-03-21 Andluca Technologies Inc. Window inserts comprising ultraviolet-absorbing and visibly transparent photovoltaic devices producing on-board electricity
KR102394750B1 (ko) * 2020-01-16 2022-05-09 한국전자기술연구원 태양광 집광 장치 및 이를 포함하는 태양전지 모듈
KR102387997B1 (ko) * 2020-05-22 2022-04-20 한국과학기술연구원 형광체가 도핑된 고분자 수지를 구비한 발광형 태양 집광 장치
RU2750366C1 (ru) * 2020-10-23 2021-06-28 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Полупроводниковый фотоэлектрический преобразователь
KR102675296B1 (ko) * 2021-08-04 2024-06-14 이화여자대학교 산학협력단 태양광 집광 장치 및 이의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040095658A1 (en) * 2002-09-05 2004-05-20 Nanosys, Inc. Nanocomposites
US20080223438A1 (en) * 2006-10-19 2008-09-18 Intematix Corporation Systems and methods for improving luminescent concentrator performance
US20090272426A1 (en) * 2008-05-03 2009-11-05 Winscom Christopher J Solar concentrator
WO2011048458A1 (en) * 2009-10-19 2011-04-28 Eni S.P.A. Photoluminescent compositions for spectrum converters with enhanced efficiency

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3591420A (en) * 1969-02-06 1971-07-06 Nasa Solar cell
JPS52135693A (en) * 1976-05-06 1977-11-12 Arufureeto Rawachieku Device for converting light energy to electric energy
US4313425A (en) 1980-02-28 1982-02-02 Crackel Lawrence E Spectral convertor
SU862755A1 (ru) * 1980-03-18 1982-07-07 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Устройство дл преобразовани световой энергии в электрическую
JPH05315635A (ja) * 1992-05-08 1993-11-26 Asahi Chem Ind Co Ltd 光発電装置
US5431742A (en) 1994-01-24 1995-07-11 Kleinerman; Marcos Y. Luminescent solar concentrators using light amplification processes
AU709596B2 (en) * 1995-08-28 1999-09-02 Minnesota Mining And Manufacturing Company Durable fluorescent solar collectors
GB9905642D0 (en) * 1999-03-11 1999-05-05 Imperial College Light concentrator for PV cells
FR2792461B3 (fr) 1999-04-19 2001-06-29 Biocube Generateurs photovoltaiques a cascade lumineuse et variation de flux elecromomagnetique
CA2401459A1 (en) * 2000-03-06 2001-09-13 Teledyne Lighting And Display Products, Inc. Lighting apparatus having quantum dot layer
JP4623403B2 (ja) * 2000-04-06 2011-02-02 日立金属株式会社 セラミックス、セラミックス粉末の製造方法及びセラミックスの製造方法。
US6689949B2 (en) 2002-05-17 2004-02-10 United Innovations, Inc. Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies
DE10316769A1 (de) * 2003-04-10 2004-10-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoffbassierte LED und zugehöriger Leuchtstoff
JP4236102B2 (ja) * 2003-10-31 2009-03-11 株式会社東芝 双方向起電型光・電流変換装置及びそれを用いた波長情報判別装置
JP2005179477A (ja) * 2003-12-18 2005-07-07 Fuji Photo Film Co Ltd 蓄積性蛍光体粉末、その製造方法および放射線像変換パネル
US7333705B2 (en) * 2004-12-03 2008-02-19 Searete Llc Photonic crystal energy converter
JP2006173324A (ja) * 2004-12-15 2006-06-29 Nichia Chem Ind Ltd 発光装置
KR100682928B1 (ko) * 2005-02-03 2007-02-15 삼성전자주식회사 양자점 화합물을 포함하는 에너지 변환막 및 양자점 박막
CA2598038C (en) * 2005-02-16 2014-09-23 Stichting Voor De Technische Wetenschappen Luminescent object and utilisation thereof
NL1028317C2 (nl) * 2005-02-17 2006-08-21 Asco Controls Bv Klep voor het geven van een gaspuls.
JP4788944B2 (ja) * 2005-03-18 2011-10-05 株式会社フジクラ 粉末状蛍光体とその製造方法、発光デバイス及び照明装置
WO2007035466A2 (en) * 2005-09-15 2007-03-29 Torrance Jerry B Solar collection devices
JP5239176B2 (ja) * 2006-03-28 2013-07-17 三菱化学株式会社 蛍光体用合金粉末及びその製造方法
US7868244B2 (en) 2006-08-21 2011-01-11 United Technologies Corporation Solar CPV cell module and method of safely assembling, installing, and/or maintaining the same
US20080149165A1 (en) * 2006-12-22 2008-06-26 General Electric Company Luminescent solar collector
US8119028B2 (en) * 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US20100139749A1 (en) 2009-01-22 2010-06-10 Covalent Solar, Inc. Solar concentrators and materials for use therein
US20100139765A1 (en) 2009-11-30 2010-06-10 Covalent Solar, Inc. Solar concentrators with remote sensitization
US20100139769A1 (en) 2009-11-30 2010-06-10 Covalent Solar, Inc. Solar concentrators with light redirection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040095658A1 (en) * 2002-09-05 2004-05-20 Nanosys, Inc. Nanocomposites
US20080223438A1 (en) * 2006-10-19 2008-09-18 Intematix Corporation Systems and methods for improving luminescent concentrator performance
US20090272426A1 (en) * 2008-05-03 2009-11-05 Winscom Christopher J Solar concentrator
WO2011048458A1 (en) * 2009-10-19 2011-04-28 Eni S.P.A. Photoluminescent compositions for spectrum converters with enhanced efficiency

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RU2011128696A (ru) 2013-01-20
KR20110098942A (ko) 2011-09-02
US20110240120A1 (en) 2011-10-06
JP2015092568A (ja) 2015-05-14
US9153723B2 (en) 2015-10-06
TWI508314B (zh) 2015-11-11
JP5952561B2 (ja) 2016-07-13
CN102246314A (zh) 2011-11-16
KR101659713B1 (ko) 2016-09-30
WO2010067296A1 (en) 2010-06-17
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RU2515182C2 (ru) 2014-05-10
EP2377160A1 (en) 2011-10-19

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