EP2355179A3 - Diode électroluminescente disposant d'une efficacité d'émission lumineuse et son procédé de fabrication - Google Patents

Diode électroluminescente disposant d'une efficacité d'émission lumineuse et son procédé de fabrication Download PDF

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Publication number
EP2355179A3
EP2355179A3 EP10013978.1A EP10013978A EP2355179A3 EP 2355179 A3 EP2355179 A3 EP 2355179A3 EP 10013978 A EP10013978 A EP 10013978A EP 2355179 A3 EP2355179 A3 EP 2355179A3
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EP
European Patent Office
Prior art keywords
emitting diode
emission efficiency
light emitting
fabricating
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10013978.1A
Other languages
German (de)
English (en)
Other versions
EP2355179A2 (fr
Inventor
In Hwan Lee
Lee Woon Jang
Jin Woo Ju
Jung Hun Choi
Jae Woo Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INDUSTRIAL COOPERATION FOUNDATION
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INDUSTRIAL COOPERATION FOUNDATION
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Publication of EP2355179A2 publication Critical patent/EP2355179A2/fr
Publication of EP2355179A3 publication Critical patent/EP2355179A3/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
EP10013978.1A 2010-02-02 2010-10-26 Diode électroluminescente disposant d'une efficacité d'émission lumineuse et son procédé de fabrication Withdrawn EP2355179A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100009468A KR101038923B1 (ko) 2010-02-02 2010-02-02 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법

Publications (2)

Publication Number Publication Date
EP2355179A2 EP2355179A2 (fr) 2011-08-10
EP2355179A3 true EP2355179A3 (fr) 2013-08-28

Family

ID=43837319

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10013978.1A Withdrawn EP2355179A3 (fr) 2010-02-02 2010-10-26 Diode électroluminescente disposant d'une efficacité d'émission lumineuse et son procédé de fabrication

Country Status (5)

Country Link
US (1) US8476088B2 (fr)
EP (1) EP2355179A3 (fr)
JP (1) JP2011159956A (fr)
KR (1) KR101038923B1 (fr)
WO (1) WO2011096626A1 (fr)

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US8802461B2 (en) * 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
US8481353B2 (en) * 2011-04-14 2013-07-09 Opto Tech Corporation Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation
CN103999245A (zh) * 2011-12-14 2014-08-20 首尔伟傲世有限公司 半导体装置及制造半导体装置的方法
CN103367584B (zh) * 2012-03-30 2017-04-05 清华大学 发光二极管及光学元件
CN103367583B (zh) * 2012-03-30 2016-08-17 清华大学 发光二极管
CN103367585B (zh) * 2012-03-30 2016-04-13 清华大学 发光二极管
CN103474543B (zh) * 2012-06-07 2016-06-08 清华大学 发光二极管
CN103474520B (zh) * 2012-06-07 2016-04-13 清华大学 发光二极管的制备方法
WO2014007867A1 (fr) * 2012-07-02 2014-01-09 The Regents Of The University Of California Dispositifs photovoltaïques organiques semi-transparents, transparents, superposés et éclairés par le haut
US20140167059A1 (en) * 2012-08-30 2014-06-19 The Regents Of The University Of California Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications
KR101373101B1 (ko) 2012-11-09 2014-03-13 한국광기술원 플라즈몬층을 가지는 반도체소자 제조방법
TWI565094B (zh) * 2012-11-15 2017-01-01 財團法人工業技術研究院 氮化物半導體結構
KR20140095392A (ko) * 2013-01-24 2014-08-01 삼성전자주식회사 질화물 반도체 발광소자
JP2016513882A (ja) * 2013-03-13 2016-05-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 多孔質の反射性コンタクトを作製する方法及び装置
KR102015914B1 (ko) * 2013-05-08 2019-08-29 엘지전자 주식회사 이종 기판, 질화물 반도체 발광 소자 및 그 제조 방법
JP6574104B2 (ja) * 2015-04-28 2019-09-11 一般財団法人ファインセラミックスセンター 窒化物系半導体のエッチング方法および窒化物系半導体の結晶欠陥検出方法
JP6724687B2 (ja) * 2016-08-01 2020-07-15 日亜化学工業株式会社 ナノロッドの形成方法及び半導体素子の製造方法
US11024775B2 (en) 2017-10-17 2021-06-01 Lumileds Llc LED emitters with integrated nano-photonic structures to enhance EQE
KR102611981B1 (ko) 2017-10-19 2023-12-11 삼성전자주식회사 발광 장치 및 그 제조 방법
US11495428B2 (en) 2019-02-17 2022-11-08 Kla Corporation Plasmonic photocathode emitters at ultraviolet and visible wavelengths
KR20220060049A (ko) * 2020-11-02 2022-05-11 삼성디스플레이 주식회사 발광 소자, 발광 소자의 제조 방법, 및 이를 포함하는 표시 장치
US20220285584A1 (en) * 2021-03-08 2022-09-08 Applied Materials, Inc. Indium-gallium-nitride light emitting diodes with light reflecting mirrors

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DE102008021403A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

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WO2008066712A2 (fr) * 2006-11-15 2008-06-05 The Regents Of The University Of California Diode électroluminescente (del) de rendement d'extraction de lumière élevé avec émetteurs à l'intérieur de matériaux structurés
KR20080068244A (ko) * 2007-01-18 2008-07-23 광주과학기술원 표면 플라즈몬을 이용하는 발광 다이오드
WO2009038324A2 (fr) * 2007-09-18 2009-03-26 Chungbuk National University Industry-Academic Cooperation Foundation Structure de semi-conducteur à tracé poreux, dispositif à semi-conducteur et procédé de fabrication correspondants
DE102008021403A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
EP2355179A2 (fr) 2011-08-10
US20110186863A1 (en) 2011-08-04
WO2011096626A1 (fr) 2011-08-11
KR101038923B1 (ko) 2011-06-03
JP2011159956A (ja) 2011-08-18
US8476088B2 (en) 2013-07-02

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