WO2012148231A3 - Faisceau de microdel et procédé de fabrication dudit faisceau - Google Patents

Faisceau de microdel et procédé de fabrication dudit faisceau Download PDF

Info

Publication number
WO2012148231A3
WO2012148231A3 PCT/KR2012/003319 KR2012003319W WO2012148231A3 WO 2012148231 A3 WO2012148231 A3 WO 2012148231A3 KR 2012003319 W KR2012003319 W KR 2012003319W WO 2012148231 A3 WO2012148231 A3 WO 2012148231A3
Authority
WO
WIPO (PCT)
Prior art keywords
micro
leds
semiconductor layer
conductive semiconductor
micro led
Prior art date
Application number
PCT/KR2012/003319
Other languages
English (en)
Korean (ko)
Other versions
WO2012148231A2 (fr
Inventor
도영락
성연국
Original Assignee
국민대학교 산학협력단
피에스아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 국민대학교 산학협력단, 피에스아이 주식회사 filed Critical 국민대학교 산학협력단
Publication of WO2012148231A2 publication Critical patent/WO2012148231A2/fr
Publication of WO2012148231A3 publication Critical patent/WO2012148231A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Faisceau de microDEL et procédé de fabrication dudit faisceau, et plus spécifiquement faisceau de microDEL comprenant une première couche conductrice de semi-conducteur, une couche active qui est formée sur la première couche conductrice de semi-conducteur et une pluralité de microDEL ayant un diamètre micrométrique ou nanométrique et comportant une seconde couche conductrice qui est formée sur la couche active, la pluralité de microDEL étant pourvue d'un élément de liaison situé sur les surfaces circonférentielles externes desdites DEL pour former un faisceau. La présente invention concerne également un procédé de fabrication de ladite microDEL comportant les étapes consistant (1) à former séquentiellement sur un substrat la première couche conductrice de semi-conducteur, la couche active et la seconde couche conductrice de semi-conducteur, (2) à former la pluralité de microDEL en attaquant les DEL comportant la première couche conductrice de semi-conducteur, la couche active et la seconde couche conductrice de semi-conducteur de manière que le diamètre des DEL soit de l'ordre micrométrique ou nanométrique, et (3) à former une pluralité de faisceaux par formation de l'élément de liaison sur les surfaces circonférentielles externes de la pluralité de DEL. Selon la présente invention, la microDEL micrométrique ou nanométrique peut être efficacement produite par combinaison d'un procédé descendant et d'un procédé ascendant et l'efficacité de luminescence peut être améliorée par le fait que les défauts de surface sur les microDEL produites sont évités.
PCT/KR2012/003319 2011-04-28 2012-04-27 Faisceau de microdel et procédé de fabrication dudit faisceau WO2012148231A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0040175 2011-04-28
KR1020110040175A KR101209446B1 (ko) 2011-04-28 2011-04-28 초소형 ｌｅｄ 소자 번들 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2012148231A2 WO2012148231A2 (fr) 2012-11-01
WO2012148231A3 true WO2012148231A3 (fr) 2012-12-20

Family

ID=47072953

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/003319 WO2012148231A2 (fr) 2011-04-28 2012-04-27 Faisceau de microdel et procédé de fabrication dudit faisceau

Country Status (2)

Country Link
KR (1) KR101209446B1 (fr)
WO (1) WO2012148231A2 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101672781B1 (ko) * 2014-11-18 2016-11-07 피에스아이 주식회사 수평배열 어셈블리용 초소형 led 소자, 이의 제조방법 및 이를 포함하는 수평배열 어셈블리
KR101713818B1 (ko) 2014-11-18 2017-03-10 피에스아이 주식회사 초소형 led 소자를 포함하는 전극어셈블리 및 그 제조방법
KR101674052B1 (ko) * 2014-11-18 2016-11-09 피에스아이 주식회사 초소형 led 소자를 전극어셈블리에 배치시키는 방법
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
KR101730977B1 (ko) 2016-01-14 2017-04-28 피에스아이 주식회사 초소형 led 전극어셈블리
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
TWI678411B (zh) * 2017-01-26 2019-12-01 南韓商Ｌｇ化學股份有限公司 微型led以及包含此微型led的顯示器
KR102448104B1 (ko) * 2018-02-08 2022-09-29 삼성디스플레이 주식회사 발광 장치 및 그의 제조 방법
US10410905B1 (en) 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
KR102557754B1 (ko) * 2018-08-03 2023-07-20 삼성디스플레이 주식회사 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치
KR102568353B1 (ko) * 2018-08-16 2023-08-18 삼성디스플레이 주식회사 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치
KR102581666B1 (ko) * 2018-08-24 2023-09-22 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치의 제조 방법
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
KR102590984B1 (ko) * 2018-10-30 2023-10-18 삼성디스플레이 주식회사 발광 소자 구조물 및 발광 소자의 제조방법
KR102651789B1 (ko) * 2018-11-06 2024-03-27 삼성디스플레이 주식회사 발광 소자 구조물 및 이의 제조방법
KR102626452B1 (ko) * 2019-01-15 2024-01-18 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치
KR20200102615A (ko) * 2019-02-21 2020-09-01 삼성디스플레이 주식회사 발광 소자 및 이를 구비한 표시 장치
KR20210010694A (ko) * 2019-07-17 2021-01-28 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
KR20210031588A (ko) * 2019-09-11 2021-03-22 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 이를 포함하는 표시 장치
KR20210099681A (ko) 2020-02-04 2021-08-13 삼성전자주식회사 3차원 구조 반도체 발광소자 및 디스플레이 장치
KR20210134103A (ko) * 2020-04-29 2021-11-09 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
KR20220031833A (ko) * 2020-09-04 2022-03-14 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
KR20220056898A (ko) * 2020-10-28 2022-05-09 삼성디스플레이 주식회사 발광 소자 유닛 및 이를 포함하는 표시 장치
KR20220059847A (ko) 2020-11-03 2022-05-10 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법, 및 나노 막대 발광 소자를 포함하는 디스플레이 장치
KR102532677B1 (ko) * 2021-02-05 2023-05-17 전북대학교산학협력단 초소형 led 소자 정렬 단위체, 이의 제조 방법 및 초소형 led 소자를 포함하는 어레이 모듈 제조 방법
CN114005912B (zh) * 2021-10-29 2023-08-11 嘉兴学院 一种椭圆纳米棒、发光二极管的制备方法及显示装置
KR102628266B1 (ko) * 2021-12-20 2024-01-23 고려대학교 산학협력단 Led 로드 수직 정렬 구조체, 및 led 로드 수직 정렬 방법
KR20230130184A (ko) * 2022-03-02 2023-09-12 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060097512A (ko) * 2005-03-11 2006-09-14 김성진 질화물 반도체 수직 전극형 발광 다이오드 및 그 제조방법
KR20110014521A (ko) * 2009-08-05 2011-02-11 순천대학교 산학협력단 발광다이오드 및 그 제조방법
JP2011249772A (ja) * 2010-05-24 2011-12-08 Lg Innotek Co Ltd 発光素子アレイ、発光素子パッケージ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060097512A (ko) * 2005-03-11 2006-09-14 김성진 질화물 반도체 수직 전극형 발광 다이오드 및 그 제조방법
KR20110014521A (ko) * 2009-08-05 2011-02-11 순천대학교 산학협력단 발광다이오드 및 그 제조방법
JP2011249772A (ja) * 2010-05-24 2011-12-08 Lg Innotek Co Ltd 発光素子アレイ、発光素子パッケージ

Also Published As

Publication number Publication date
KR20120122160A (ko) 2012-11-07
WO2012148231A2 (fr) 2012-11-01
KR101209446B1 (ko) 2012-12-07

Similar Documents

Publication Publication Date Title
WO2012148231A3 (fr) Faisceau de microdel et procédé de fabrication dudit faisceau
WO2012148228A3 (fr) Del ultrapetite et procédé de fabrication de ladite del
EP2355179A3 (fr) Diode électroluminescente disposant d'une efficacité d'émission lumineuse et son procédé de fabrication
WO2013039897A3 (fr) Matériaux fluorescents destinés à être utilisés avec des diodes électroluminescentes et d'autres dispositifs optoélectroniques
MX340348B (es) Microdiodo emisor de luz.
WO2012091415A3 (fr) Substrat pour dispositif organique électroluminescent et son procédé de fabrication
EP2518789A3 (fr) Substrat d'extraction de lumière pour dispositif électroluminescent et son procédé de fabrication
EP2511963A3 (fr) Feuille électroluminescent et dispositif électroluminescent et procédé de fabrication correspondante
WO2013040423A3 (fr) Article abrasif et procédé de formation
MX336453B (es) Método para formar una estructura de microleds y arreglo de estructuras de microleds con una capa eléctricamente asilante.
WO2011090836A3 (fr) Procédé de fabrication de dispositif d'éclairage à semi-conducteurs sur un substrat conducteur
EP2518784A3 (fr) Élément émetteur de lumière semi-conducteur au nitrure et son procédé de fabrication
PH12014502150A1 (en) Copper foil with carrier, method for manufacturing copper foil with carrier, copper foil with carrier for printed circuit board, and printed circuit board
EP2704227A3 (fr) Structure d'encapsulation de diodes électroluminescentes organiques (oled) et son procédé de fabrication et dispositif électroluminescent
EP2511966A3 (fr) Feuille de résine réfléchissante, dispositif à diode électroluminescente et son procédé de production
EP2466658A3 (fr) Diode électroluminescente, boîtier de DEL et ses procédés de fabrication
JP2010532409A5 (fr)
WO2010085042A3 (fr) Dispositif à semi-conducteurs, dispositif électroluminescent et leur procédé de fabrication
EP2642534A3 (fr) Dispositif électroluminescent semi-conducteur et son procédé de fabrication
WO2009002129A3 (fr) Dispositif électroluminescent à semi-conducteur et procédé de fabrication de ce dernier
EP2722899A3 (fr) Dispositif électroluminescent
WO2013017364A3 (fr) Agencement opto-électronique et procédé de fabrication d'un agencement opto-électronique
EP2482343A3 (fr) Diode électroluminescente
EP2509122A3 (fr) Feuille d'encapsulation, dispositif à diode électroluminescente et procédé de fabrication correspondant
WO2012047069A3 (fr) Élément électroluminescent et son procédé de fabrication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12777650

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12777650

Country of ref document: EP

Kind code of ref document: A2